DE3852357T2 - Dünnfilmkohlewerkstoff und Verfahren zum Aufbringen. - Google Patents

Dünnfilmkohlewerkstoff und Verfahren zum Aufbringen.

Info

Publication number
DE3852357T2
DE3852357T2 DE3852357T DE3852357T DE3852357T2 DE 3852357 T2 DE3852357 T2 DE 3852357T2 DE 3852357 T DE3852357 T DE 3852357T DE 3852357 T DE3852357 T DE 3852357T DE 3852357 T2 DE3852357 T2 DE 3852357T2
Authority
DE
Germany
Prior art keywords
application
thin film
carbon material
film carbon
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3852357T
Other languages
English (en)
Other versions
DE3852357D1 (de
Inventor
Shunpei Yamazaki
Shigenori Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP62200351A external-priority patent/JPS6442313A/ja
Priority claimed from JP63177847A external-priority patent/JPH0226822A/ja
Priority claimed from JP63177849A external-priority patent/JPH0230761A/ja
Priority claimed from JP63177848A external-priority patent/JPH0230760A/ja
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Application granted granted Critical
Publication of DE3852357D1 publication Critical patent/DE3852357D1/de
Publication of DE3852357T2 publication Critical patent/DE3852357T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Surface Treatment Of Glass (AREA)
DE3852357T 1987-08-10 1988-08-10 Dünnfilmkohlewerkstoff und Verfahren zum Aufbringen. Expired - Fee Related DE3852357T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP62200351A JPS6442313A (en) 1987-08-10 1987-08-10 Production of carbon
JP63177847A JPH0226822A (ja) 1988-07-17 1988-07-17 炭素を主成分とする被膜
JP63177849A JPH0230761A (ja) 1988-07-17 1988-07-17 炭素を主成分とする被膜を有する複合体
JP63177848A JPH0230760A (ja) 1988-07-17 1988-07-17 炭素を主成分とする被膜を有する複合体

Publications (2)

Publication Number Publication Date
DE3852357D1 DE3852357D1 (de) 1995-01-19
DE3852357T2 true DE3852357T2 (de) 1995-04-27

Family

ID=27474789

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3852357T Expired - Fee Related DE3852357T2 (de) 1987-08-10 1988-08-10 Dünnfilmkohlewerkstoff und Verfahren zum Aufbringen.

Country Status (5)

Country Link
US (1) US5120625A (de)
EP (1) EP0304220B1 (de)
KR (1) KR930001013B1 (de)
CN (1) CN1020477C (de)
DE (1) DE3852357T2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5238705A (en) * 1987-02-24 1993-08-24 Semiconductor Energy Laboratory Co., Ltd. Carbonaceous protective films and method of depositing the same
KR930010193B1 (ko) * 1988-09-13 1993-10-15 가부시끼가이샤 한도다이 에네르기겐뀨쇼 세라믹막 및 탄소막으로 덮인 부품과 그 부품 제작방법
US5041201A (en) * 1988-09-16 1991-08-20 Semiconductor Energy Laboratory Co., Ltd. Plasma processing method and apparatus
KR930011413B1 (ko) * 1990-09-25 1993-12-06 가부시키가이샤 한도오따이 에네루기 겐큐쇼 펄스형 전자파를 사용한 플라즈마 cvd 법
JPH05891A (ja) * 1991-06-21 1993-01-08 Canon Inc ダイヤモンド−金属接合体
CA2072384A1 (en) * 1991-08-29 1993-03-01 Clifford L. Spiro Carbon fluoride compositions
CA2091665C (en) * 1992-04-07 2003-01-07 Peter George Tsantrizos Process for the synthesis of fullerenes
DE59409915D1 (de) * 1993-05-21 2001-11-29 Fraunhofer Ges Forschung Plasmapolymer-Schichtenfolge als Hartstoffschicht mit definiert einstellbarem Adhäsionsverhalten
JP2788412B2 (ja) * 1994-08-11 1998-08-20 麒麟麦酒株式会社 炭素膜コーティングプラスチック容器の製造装置および製造方法
US5705044A (en) 1995-08-07 1998-01-06 Akashic Memories Corporation Modular sputtering machine having batch processing and serial thin film sputtering
US6541786B1 (en) * 1997-05-12 2003-04-01 Cymer, Inc. Plasma pinch high energy with debris collector
US6452199B1 (en) * 1997-05-12 2002-09-17 Cymer, Inc. Plasma focus high energy photon source with blast shield
US5849443A (en) * 1998-02-13 1998-12-15 Eastman Kodak Company Method of making multilayer electrophotographic elements
US5849445A (en) * 1998-02-13 1998-12-15 Eastman Kodak Company Multilayer photoconductive elements having low dark decay
DE10011999C1 (de) * 2000-03-11 2001-06-07 Hilti Ag Staubschutz sowie dessen Verwendung bei einem Elektrohandwerkzeuggerät und Werkzeug
US20040227197A1 (en) * 2003-02-28 2004-11-18 Shinji Maekawa Composition of carbon nitride, thin film transistor with the composition of carbon nitride, display device with the thin film transistor, and manufacturing method thereof
WO2018093985A1 (en) 2016-11-17 2018-05-24 Cardinal Cg Company Static-dissipative coating technology

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5557875A (en) * 1978-06-24 1980-04-30 Mita Ind Co Ltd Transfer type electrostatic copying machine
JPS57174467A (en) * 1981-04-20 1982-10-27 Inoue Japax Res Inc Ion working device
US4508781A (en) * 1982-06-07 1985-04-02 The United States Of America As Represented By The Secretary Of Agriculture Fluorination by inorganic fluorides in glow discharge
US4486286A (en) * 1982-09-28 1984-12-04 Nerken Research Corp. Method of depositing a carbon film on a substrate and products obtained thereby
CA1232228A (en) * 1984-03-13 1988-02-02 Tatsuro Miyasato Coating film and method and apparatus for producing the same
US4663183A (en) * 1984-09-10 1987-05-05 Energy Conversion Devices, Inc. Glow discharge method of applying a carbon coating onto a substrate
US4770940A (en) * 1984-09-10 1988-09-13 Ovonic Synthetic Materials Company Glow discharge method of applying a carbon coating onto a substrate and coating applied thereby
US4783361A (en) * 1984-09-10 1988-11-08 Ovonic Synthetic Materials Company, Inc. Coated lenses
US4664999A (en) * 1984-10-16 1987-05-12 Oki Electric Industry Co., Ltd. Method of making electrophotographic member with a-Si photoconductive layer
US4675265A (en) * 1985-03-26 1987-06-23 Fuji Electric Co., Ltd. Electrophotographic light-sensitive element with amorphous C overlayer
US4713309A (en) * 1985-08-26 1987-12-15 Energy Conversion Devices, Inc. Enhancement layer for positively charged electrophotographic devices and method for decreasing charge fatigue through the use of said layer
EP0252442A3 (de) * 1986-07-08 1990-04-18 Minolta Camera Kabushiki Kaisha Lichtempfindliches Element mit Überschicht
DE3751651T2 (de) * 1986-10-14 1996-10-17 Minolta Camera Kk Elektrophotographisches lichtempfindliches Element, das einen Überzug enthält
US4837137A (en) * 1986-12-05 1989-06-06 Fuji Electric Co., Ltd. Electrophotographic photoreceptor
JPH0676666B2 (ja) * 1987-02-10 1994-09-28 株式会社半導体エネルギ−研究所 炭素膜作製方法
US4809876A (en) * 1987-08-27 1989-03-07 Aluminum Company Of America Container body having improved gas barrier properties
JPH01227161A (ja) * 1988-03-07 1989-09-11 Minolta Camera Co Ltd 感光体及びその製造方法

Also Published As

Publication number Publication date
EP0304220B1 (de) 1994-12-07
CN1031722A (zh) 1989-03-15
US5120625A (en) 1992-06-09
CN1020477C (zh) 1993-05-05
KR890003981A (ko) 1989-04-19
EP0304220A1 (de) 1989-02-22
DE3852357D1 (de) 1995-01-19
KR930001013B1 (ko) 1993-02-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee