DE68917550T2 - Verfahren und Vorrichtung zur Plasmabehandlung. - Google Patents

Verfahren und Vorrichtung zur Plasmabehandlung.

Info

Publication number
DE68917550T2
DE68917550T2 DE68917550T DE68917550T DE68917550T2 DE 68917550 T2 DE68917550 T2 DE 68917550T2 DE 68917550 T DE68917550 T DE 68917550T DE 68917550 T DE68917550 T DE 68917550T DE 68917550 T2 DE68917550 T2 DE 68917550T2
Authority
DE
Germany
Prior art keywords
plasma treatment
plasma
treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68917550T
Other languages
English (en)
Other versions
DE68917550D1 (de
Inventor
Shunpei Yamazaki
Mitsunori Tsuchiya
Shigenori Hayashi
Naoki Hirose
Noriya Ishida
Mari Sasaki
Atsushi Kawano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP23316688A external-priority patent/JP2736421B2/ja
Priority claimed from JP23316788A external-priority patent/JP2627939B2/ja
Priority claimed from JP63233168A external-priority patent/JP2639569B2/ja
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of DE68917550D1 publication Critical patent/DE68917550D1/de
Application granted granted Critical
Publication of DE68917550T2 publication Critical patent/DE68917550T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
DE68917550T 1988-09-16 1989-09-14 Verfahren und Vorrichtung zur Plasmabehandlung. Expired - Fee Related DE68917550T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP23316688A JP2736421B2 (ja) 1988-09-16 1988-09-16 炭素膜で覆われた部材およびその作製方法
JP23316788A JP2627939B2 (ja) 1988-09-16 1988-09-16 炭素膜で覆われた事務用部材
JP63233168A JP2639569B2 (ja) 1988-09-16 1988-09-16 プラズマ反応方法およびプラズマ反応装置

Publications (2)

Publication Number Publication Date
DE68917550D1 DE68917550D1 (de) 1994-09-22
DE68917550T2 true DE68917550T2 (de) 1994-12-22

Family

ID=27331961

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68917550T Expired - Fee Related DE68917550T2 (de) 1988-09-16 1989-09-14 Verfahren und Vorrichtung zur Plasmabehandlung.

Country Status (4)

Country Link
US (1) US5041201A (de)
EP (1) EP0359567B1 (de)
KR (1) KR920007022B1 (de)
DE (1) DE68917550T2 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5283087A (en) * 1988-02-05 1994-02-01 Semiconductor Energy Laboratory Co., Ltd. Plasma processing method and apparatus
US5688556A (en) * 1994-04-01 1997-11-18 Mobil Oil Corporation Barrier films having vapor coated EVOH surfaces
CN1144503A (zh) * 1994-04-01 1997-03-05 美孚石油公司 具有涂碳的高能表面的保护膜
ZA954295B (en) * 1994-06-03 1996-11-25 Mobil Oil Corp Carbon-coated barrier films with increased concentration of tetrahedrally-coordinated carbon
JP2788412B2 (ja) * 1994-08-11 1998-08-20 麒麟麦酒株式会社 炭素膜コーティングプラスチック容器の製造装置および製造方法
US5656123A (en) * 1995-06-07 1997-08-12 Varian Associates, Inc. Dual-frequency capacitively-coupled plasma reactor for materials processing
FR2738832B1 (fr) * 1995-09-18 1997-12-12 Suisse Electronique Microtech Procede d'obtention d'une couche de diamant sur un support en matiere plastique et produit ainsi obtenu
WO1997020981A1 (en) * 1995-12-01 1997-06-12 E.I. Du Pont De Nemours And Company Capacitively coupled rf diamond-like-carbon reactor
JP3669138B2 (ja) * 1998-03-05 2005-07-06 日新電機株式会社 プラズマｃｖｄ法、プラズマｃｖｄ装置及び電極
US6528435B1 (en) 2000-08-25 2003-03-04 Wafermasters, Inc. Plasma processing
TW544071U (en) * 2002-04-02 2003-07-21 Nano Electronics And Micro Sys Electrode device for plasma treatment system
JP2004288984A (ja) * 2003-03-24 2004-10-14 Sharp Corp 成膜装置及び成膜方法
DE10317208A1 (de) * 2003-04-15 2004-11-04 Robert Bosch Gmbh Plasmadepositionsverfahren
CN1875454A (zh) * 2003-10-28 2006-12-06 诺信公司 等离子处理系统和等离子处理工艺
US7824498B2 (en) * 2004-02-24 2010-11-02 Applied Materials, Inc. Coating for reducing contamination of substrates during processing
JP4185483B2 (ja) * 2004-10-22 2008-11-26 シャープ株式会社 プラズマ処理装置
JP4584722B2 (ja) * 2005-01-13 2010-11-24 シャープ株式会社 プラズマ処理装置および同装置により製造された半導体素子
JP2006196681A (ja) * 2005-01-13 2006-07-27 Sharp Corp プラズマ処理装置および同装置により製造された半導体素子
US8372238B2 (en) 2008-05-20 2013-02-12 Nordson Corporation Multiple-electrode plasma processing systems with confined process chambers and interior-bussed electrical connections with the electrodes
US8226795B2 (en) 2009-02-03 2012-07-24 Nordson Corporation Magnetic clips and substrate holders for use in a plasma processing system

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6029295B2 (ja) * 1979-08-16 1985-07-10 舜平 山崎 非単結晶被膜形成法
JPS5930709A (ja) * 1982-08-13 1984-02-18 Toa Nenryo Kogyo Kk 炭素膜及び／又は炭素粒子の製造方法
US4464223A (en) * 1983-10-03 1984-08-07 Tegal Corp. Plasma reactor apparatus and method
JPH0644554B2 (ja) * 1984-03-28 1994-06-08 株式会社富士電機総合研究所 プラズマｃｖｄ装置
JP2616760B2 (ja) * 1985-04-08 1997-06-04 株式会社 半導体エネルギー研究所 プラズマ気相反応装置
CN1020477C (zh) * 1987-08-10 1993-05-05 株式会社半导体能源研究所 含卤素的碳材料淀积方法
JPS6461396A (en) * 1987-09-01 1989-03-08 Idemitsu Petrochemical Co Synthesis of diamond and installation therefor
US4971667A (en) * 1988-02-05 1990-11-20 Semiconductor Energy Laboratory Co., Ltd. Plasma processing method and apparatus
KR930010193B1 (ko) * 1988-09-13 1993-10-15 가부시끼가이샤 한도다이 에네르기겐뀨쇼 세라믹막 및 탄소막으로 덮인 부품과 그 부품 제작방법
US5185179A (en) * 1988-10-11 1993-02-09 Semiconductor Energy Laboratory Co., Ltd. Plasma processing method and products thereof

Also Published As

Publication number Publication date
EP0359567A3 (de) 1991-01-16
DE68917550D1 (de) 1994-09-22
EP0359567A2 (de) 1990-03-21
KR920007022B1 (ko) 1992-08-24
US5041201A (en) 1991-08-20
KR900005854A (ko) 1990-04-14
EP0359567B1 (de) 1994-08-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee