DE69505994T2 - Vorrichtung und verfahren zum kathodenzerstäuben von kohlenstoff - Google Patents

Vorrichtung und verfahren zum kathodenzerstäuben von kohlenstoff

Info

Publication number
DE69505994T2
DE69505994T2 DE69505994T DE69505994T DE69505994T2 DE 69505994 T2 DE69505994 T2 DE 69505994T2 DE 69505994 T DE69505994 T DE 69505994T DE 69505994 T DE69505994 T DE 69505994T DE 69505994 T2 DE69505994 T2 DE 69505994T2
Authority
DE
Germany
Prior art keywords
cathod
spraying carbon
spraying
carbon
cathod spraying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69505994T
Other languages
English (en)
Other versions
DE69505994D1 (de
Inventor
Taesun Kim
Hyung Lee
Yao-Tzung Shih
John Bruno
Robert Zubeck
Dennis Hollars
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seagate Technology LLC
Original Assignee
Seagate Technology LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seagate Technology LLC filed Critical Seagate Technology LLC
Publication of DE69505994D1 publication Critical patent/DE69505994D1/de
Application granted granted Critical
Publication of DE69505994T2 publication Critical patent/DE69505994T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0605Carbon
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84Processes or apparatus specially adapted for manufacturing record carriers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/8408Processes or apparatus specially adapted for manufacturing record carriers protecting the magnetic layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405Magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Physical Vapour Deposition (AREA)
DE69505994T 1994-09-23 1995-09-21 Vorrichtung und verfahren zum kathodenzerstäuben von kohlenstoff Expired - Fee Related DE69505994T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/311,529 US5830331A (en) 1994-09-23 1994-09-23 Apparatus and method for sputtering carbon
PCT/US1995/012399 WO1996009622A2 (en) 1994-09-23 1995-09-21 Apparatus and method for sputtering carbon

Publications (2)

Publication Number Publication Date
DE69505994D1 DE69505994D1 (de) 1998-12-17
DE69505994T2 true DE69505994T2 (de) 1999-04-08

Family

ID=23207320

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69505994T Expired - Fee Related DE69505994T2 (de) 1994-09-23 1995-09-21 Vorrichtung und verfahren zum kathodenzerstäuben von kohlenstoff

Country Status (7)

Country Link
US (1) US5830331A (de)
EP (1) EP0782744B1 (de)
JP (1) JP3589467B2 (de)
KR (1) KR100281340B1 (de)
CN (1) CN1164915A (de)
DE (1) DE69505994T2 (de)
WO (1) WO1996009622A2 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW358964B (en) 1996-11-21 1999-05-21 Applied Materials Inc Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasma
DE19651615C1 (de) * 1996-12-12 1997-07-10 Fraunhofer Ges Forschung Verfahren zum Aufbringen von Kohlenstoffschichten durch reaktives Magnetron-Sputtern
US6042700A (en) * 1997-09-15 2000-03-28 Applied Materials, Inc. Adjustment of deposition uniformity in an inductively coupled plasma source
US6726993B2 (en) * 1997-12-02 2004-04-27 Teer Coatings Limited Carbon coatings, method and apparatus for applying them, and articles bearing such coatings
US6103320A (en) * 1998-03-05 2000-08-15 Shincron Co., Ltd. Method for forming a thin film of a metal compound by vacuum deposition
US6312798B1 (en) 1998-09-25 2001-11-06 Seagate Technology Llc Magnetic recording medium having a nitrogen-doped hydrogenated carbon protective overcoat
EP1328982B1 (de) 2000-03-24 2005-07-20 Cymbet Corporation Gehäuse für die anordnung und anordnungen mit integrierter batterie
US6906436B2 (en) 2003-01-02 2005-06-14 Cymbet Corporation Solid state activity-activated battery device and method
US7603144B2 (en) 2003-01-02 2009-10-13 Cymbet Corporation Active wireless tagging system on peel and stick substrate
US7294209B2 (en) 2003-01-02 2007-11-13 Cymbet Corporation Apparatus and method for depositing material onto a substrate using a roll-to-roll mask
US20040238583A1 (en) * 2003-05-28 2004-12-02 Vanessa Gordon Personal pillow transport system
US7211351B2 (en) 2003-10-16 2007-05-01 Cymbet Corporation Lithium/air batteries with LiPON as separator and protective barrier and method
KR20070024473A (ko) 2004-01-06 2007-03-02 사임베트 코퍼레이션 층상 배리어구조와 그 형성방법
US7776478B2 (en) 2005-07-15 2010-08-17 Cymbet Corporation Thin-film batteries with polymer and LiPON electrolyte layers and method
CA2615479A1 (en) 2005-07-15 2007-01-25 Cymbet Corporation Thin-film batteries with polymer and lipon electrolyte layers and methods
JP4436350B2 (ja) * 2006-09-14 2010-03-24 株式会社アルバック 薄膜形成方法及び薄膜形成装置
CN101535177B (zh) * 2006-11-10 2012-06-13 住友电气工业株式会社 含有Si-O的氢化碳膜、具有该氢化碳膜的光学装置以及制备含有Si-O的氢化碳膜和光学装置的方法
US11527774B2 (en) 2011-06-29 2022-12-13 Space Charge, LLC Electrochemical energy storage devices
US10601074B2 (en) 2011-06-29 2020-03-24 Space Charge, LLC Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices
US9853325B2 (en) 2011-06-29 2017-12-26 Space Charge, LLC Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices
EP4017223A1 (de) 2017-06-27 2022-06-22 Canon Anelva Corporation Plasmaverarbeitungsvorrichtung
JP6595002B2 (ja) 2017-06-27 2019-10-23 キヤノンアネルバ株式会社 スパッタリング装置
KR102361377B1 (ko) 2017-06-27 2022-02-10 캐논 아네르바 가부시키가이샤 플라스마 처리 장치
JP6280677B1 (ja) 2017-06-27 2018-02-14 キヤノンアネルバ株式会社 プラズマ処理装置
WO2019173626A1 (en) 2018-03-07 2019-09-12 Space Charge, LLC Thin-film solid-state energy-storage devices
KR102439024B1 (ko) * 2018-06-26 2022-09-02 캐논 아네르바 가부시키가이샤 플라스마 처리 장치, 플라스마 처리 방법, 프로그램, 및 메모리 매체
CN113564527B (zh) * 2021-08-10 2022-06-07 中国科学院兰州化学物理研究所 一种抗辐照无氢碳膜聚合物润滑材料及其制备方法和应用

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2549361B2 (ja) * 1984-01-26 1996-10-30 電気化学工業株式会社 磁気記憶媒体
US4737419A (en) * 1985-02-11 1988-04-12 International Business Machines Corporation Overcoat for particulate magnetic recording disk
US4778582A (en) * 1987-06-02 1988-10-18 International Business Machines Corporation Process for making a thin film metal alloy magnetic recording disk with a hydrogenated carbon overcoat
US5074983A (en) * 1989-04-21 1991-12-24 Hmt Technology Corporation Thin film testing method
DE4138794A1 (de) * 1991-11-26 1993-05-27 Leybold Ag Verfahren und vorrichtung zum beschichten eines substrats, insbesondere mit elektrisch nichtleitenden schichten
US5415757A (en) * 1991-11-26 1995-05-16 Leybold Aktiengesellschaft Apparatus for coating a substrate with electrically nonconductive coatings
JPH06145975A (ja) * 1992-03-20 1994-05-27 Komag Inc 炭素フィルムをスパタリングする方法及びその製造物
US5512164A (en) * 1993-06-03 1996-04-30 The United States Of America As Represented By The United States Department Of Energy Method for sputtering with low frequency alternating current
DE4413655A1 (de) * 1994-04-20 1995-10-26 Leybold Ag Beschichtungsanlage

Also Published As

Publication number Publication date
EP0782744B1 (de) 1998-11-11
US5830331A (en) 1998-11-03
DE69505994D1 (de) 1998-12-17
KR100281340B1 (ko) 2001-02-01
JPH10509267A (ja) 1998-09-08
JP3589467B2 (ja) 2004-11-17
EP0782744A2 (de) 1997-07-09
CN1164915A (zh) 1997-11-12
WO1996009622A3 (en) 1996-05-30
WO1996009622A2 (en) 1996-03-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: SEAGATE TECHNOLOGY LLC, SCOTTS VALLEY, CALIF., US

8328 Change in the person/name/address of the agent

Free format text: HENKEL, FEILER & HAENZEL, 81675 MUENCHEN

8339 Ceased/non-payment of the annual fee