DE68908729T3 - Diamant und seine Darstellung durch ein Verfahren mittels Abscheidung aus der Gasphase. - Google Patents
Diamant und seine Darstellung durch ein Verfahren mittels Abscheidung aus der Gasphase.Info
- Publication number
- DE68908729T3 DE68908729T3 DE68908729T DE68908729T DE68908729T3 DE 68908729 T3 DE68908729 T3 DE 68908729T3 DE 68908729 T DE68908729 T DE 68908729T DE 68908729 T DE68908729 T DE 68908729T DE 68908729 T3 DE68908729 T3 DE 68908729T3
- Authority
- DE
- Germany
- Prior art keywords
- diamond
- representation
- vapor deposition
- deposition process
- vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/272—Diamond only using DC, AC or RF discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/274—Diamond only using microwave discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/277—Diamond only using other elements in the gas phase besides carbon and hydrogen; using other elements besides carbon, hydrogen and oxygen in case of use of combustion torches; using other elements besides carbon, hydrogen and inert gas in case of use of plasma jets
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2264088 | 1988-02-01 |
Publications (3)
Publication Number | Publication Date |
---|---|
DE68908729D1 DE68908729D1 (de) | 1993-10-07 |
DE68908729T2 DE68908729T2 (de) | 1994-02-03 |
DE68908729T3 true DE68908729T3 (de) | 1998-02-12 |
Family
ID=12088437
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68908729T Expired - Lifetime DE68908729T3 (de) | 1988-02-01 | 1989-02-01 | Diamant und seine Darstellung durch ein Verfahren mittels Abscheidung aus der Gasphase. |
Country Status (2)
Country | Link |
---|---|
EP (1) | EP0327051B2 (de) |
DE (1) | DE68908729T3 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0469626B1 (de) * | 1990-08-03 | 1998-04-29 | Sumitomo Electric Industries, Ltd. | CVD-Verfahren zur Herstellung von Diamant |
US6162412A (en) * | 1990-08-03 | 2000-12-19 | Sumitomo Electric Industries, Ltd. | Chemical vapor deposition method of high quality diamond |
EP0487292B1 (de) * | 1990-11-22 | 1996-02-14 | Sumitomo Electric Industries, Limited | Polykristallines Dimantwerkzeug und Verfahren für seine Herstellung |
JPH059735A (ja) * | 1991-07-09 | 1993-01-19 | Kobe Steel Ltd | ダイヤモンドの気相合成方法 |
SE502094C2 (sv) * | 1991-08-16 | 1995-08-14 | Sandvik Ab | Metod för diamantbeläggning med mikrovågsplasma |
US5587207A (en) * | 1994-11-14 | 1996-12-24 | Gorokhovsky; Vladimir I. | Arc assisted CVD coating and sintering method |
US5478608A (en) * | 1994-11-14 | 1995-12-26 | Gorokhovsky; Vladimir I. | Arc assisted CVD coating method and apparatus |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4434188A (en) * | 1981-12-17 | 1984-02-28 | National Institute For Researches In Inorganic Materials | Method for synthesizing diamond |
JPS60221395A (ja) * | 1984-04-19 | 1985-11-06 | Yoshio Imai | ダイヤモンド薄膜の製造方法 |
US4900628A (en) * | 1986-07-23 | 1990-02-13 | Sumitomo Electric Industries, Ltd. | Gaseous phase synthesized diamond and method for synthesizing same |
US4859490A (en) * | 1986-07-23 | 1989-08-22 | Sumitomo Electric Industries, Ltd. | Method for synthesizing diamond |
-
1989
- 1989-02-01 EP EP89101702A patent/EP0327051B2/de not_active Expired - Lifetime
- 1989-02-01 DE DE68908729T patent/DE68908729T3/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE68908729T2 (de) | 1994-02-03 |
DE68908729D1 (de) | 1993-10-07 |
EP0327051B2 (de) | 1997-09-17 |
EP0327051B1 (de) | 1993-09-01 |
EP0327051A1 (de) | 1989-08-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE68910490D1 (de) | Verfahren zur Diamantabscheidung aus der Gasphase, auch von hochkristallinem Diamant. | |
ATA316378A (de) | Verfahren zur herstellung von neuen anthra- cyclinen | |
ATA841778A (de) | Verfahren zur herstellung von neuen nitrosubstituierten 1,4-dihydropyridinen | |
DE3751756T2 (de) | Verfahren zum Abscheiden aus der Gasphase | |
DE3785686T2 (de) | Sammelrohrherstellungsverfahren und durch ein solches Verfahren erhaltenes Sammelrohr. | |
DE69006605D1 (de) | Verfahren zur Herstellung einer Einkristallschicht aus Diamant. | |
AT358734B (de) | Verfahren zur herstellung von neuen anti- bakteriell wirksamen verbindungen | |
DE3787542D1 (de) | Verfahren und vorrichtung zum niederschlagen aus der gasphase. | |
DE68908520T2 (de) | Durch Zerstäubung abgeschiedene Nickelschicht und Verfahren zu deren Abscheidung. | |
DE69009799T2 (de) | Verfahren zur Herstellung einer Einkristallschicht aus Diamant. | |
DE68908729D1 (de) | Diamant und seine Darstellung durch ein Verfahren mittels Abscheidung aus der Gasphase. | |
AT368920B (de) | Verfahren zur herstellung von buechsen aus streifenfoermigem material | |
DE69012409D1 (de) | Vorrichtung zur Herstellung von Halbleitern durch Abscheidung aus der Gasphase. | |
DE68913157D1 (de) | Verfahren zur herstellung von diamant aus der dampfphase. | |
ATA316278A (de) | Verfahren zur herstellung von neuen anthra- cyclinen | |
DE68915465T2 (de) | Verfahren zur Formung von Teilen vorgewählter Grösse aus Siliciumstäben. | |
ATA868977A (de) | Verfahren zur herstellung von einheitlich aufgebauten copolymerisaten cyclischer diene | |
AT357675B (de) | Verfahren zur herstellung von 1-n-(omega-amino- -alpha-hydroxyalkanoyl) kanamycinen | |
AT362054B (de) | Verfahren zur reinigung von aus der zoapatl- pflanze erhaltenen extrakten | |
AT359490B (de) | Verfahren zur hestellung von neuen 1,3,4- oxadiazolverbindungen | |
DE69029064D1 (de) | Verfahren zum Aufsilizieren von metallischen Gegendstand durch chemische Abscheidung aus der Dampfphase | |
AT360502B (de) | Verfahren zur herstellung von 1,4-dicyanobuten durch dimerisierung von acrylnitril | |
DD130006A1 (de) | Verfahren zur herstellung vorwiegend rotationssymmetrischer bauteile aus metallischen werkstoffen | |
DE68911125T2 (de) | Verfahren zur Herstellung der keramischen elektronischen Komponenten von mehreren Schichten. | |
ATA231581A (de) | Verfahren zur hestellung von neuen nitrosubstituierten 1,4-dihydropyridinen |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8363 | Opposition against the patent | ||
8366 | Restricted maintained after opposition proceedings | ||
8320 | Willingness to grant licences declared (paragraph 23) |