DE68908729T3 - Diamant und seine Darstellung durch ein Verfahren mittels Abscheidung aus der Gasphase. - Google Patents

Diamant und seine Darstellung durch ein Verfahren mittels Abscheidung aus der Gasphase.

Info

Publication number
DE68908729T3
DE68908729T3 DE68908729T DE68908729T DE68908729T3 DE 68908729 T3 DE68908729 T3 DE 68908729T3 DE 68908729 T DE68908729 T DE 68908729T DE 68908729 T DE68908729 T DE 68908729T DE 68908729 T3 DE68908729 T3 DE 68908729T3
Authority
DE
Germany
Prior art keywords
diamond
representation
vapor deposition
deposition process
vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE68908729T
Other languages
English (en)
Other versions
DE68908729T2 (de
DE68908729D1 (de
Inventor
Keiichiro Tanabe
Takahiro Imai
Naoji Fujimori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=12088437&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE68908729(T3) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE68908729D1 publication Critical patent/DE68908729D1/de
Publication of DE68908729T2 publication Critical patent/DE68908729T2/de
Application granted granted Critical
Publication of DE68908729T3 publication Critical patent/DE68908729T3/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26Deposition of carbon only
    • C23C16/27Diamond only
    • C23C16/272Diamond only using DC, AC or RF discharges
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26Deposition of carbon only
    • C23C16/27Diamond only
    • C23C16/274Diamond only using microwave discharges
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26Deposition of carbon only
    • C23C16/27Diamond only
    • C23C16/277Diamond only using other elements in the gas phase besides carbon and hydrogen; using other elements besides carbon, hydrogen and oxygen in case of use of combustion torches; using other elements besides carbon, hydrogen and inert gas in case of use of plasma jets
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/10Heating of the reaction chamber or the substrate
    • C30B25/105Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/04Diamond
DE68908729T 1988-02-01 1989-02-01 Diamant und seine Darstellung durch ein Verfahren mittels Abscheidung aus der Gasphase. Expired - Lifetime DE68908729T3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2264088 1988-02-01

Publications (3)

Publication Number Publication Date
DE68908729D1 DE68908729D1 (de) 1993-10-07
DE68908729T2 DE68908729T2 (de) 1994-02-03
DE68908729T3 true DE68908729T3 (de) 1998-02-12

Family

ID=12088437

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68908729T Expired - Lifetime DE68908729T3 (de) 1988-02-01 1989-02-01 Diamant und seine Darstellung durch ein Verfahren mittels Abscheidung aus der Gasphase.

Country Status (2)

Country Link
EP (1) EP0327051B2 (de)
DE (1) DE68908729T3 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0469626B1 (de) * 1990-08-03 1998-04-29 Sumitomo Electric Industries, Ltd. CVD-Verfahren zur Herstellung von Diamant
US6162412A (en) * 1990-08-03 2000-12-19 Sumitomo Electric Industries, Ltd. Chemical vapor deposition method of high quality diamond
EP0487292B1 (de) * 1990-11-22 1996-02-14 Sumitomo Electric Industries, Limited Polykristallines Dimantwerkzeug und Verfahren für seine Herstellung
JPH059735A (ja) * 1991-07-09 1993-01-19 Kobe Steel Ltd ダイヤモンドの気相合成方法
SE502094C2 (sv) * 1991-08-16 1995-08-14 Sandvik Ab Metod för diamantbeläggning med mikrovågsplasma
US5587207A (en) * 1994-11-14 1996-12-24 Gorokhovsky; Vladimir I. Arc assisted CVD coating and sintering method
US5478608A (en) * 1994-11-14 1995-12-26 Gorokhovsky; Vladimir I. Arc assisted CVD coating method and apparatus

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4434188A (en) * 1981-12-17 1984-02-28 National Institute For Researches In Inorganic Materials Method for synthesizing diamond
JPS60221395A (ja) * 1984-04-19 1985-11-06 Yoshio Imai ダイヤモンド薄膜の製造方法
US4900628A (en) * 1986-07-23 1990-02-13 Sumitomo Electric Industries, Ltd. Gaseous phase synthesized diamond and method for synthesizing same
US4859490A (en) * 1986-07-23 1989-08-22 Sumitomo Electric Industries, Ltd. Method for synthesizing diamond

Also Published As

Publication number Publication date
DE68908729T2 (de) 1994-02-03
DE68908729D1 (de) 1993-10-07
EP0327051B2 (de) 1997-09-17
EP0327051B1 (de) 1993-09-01
EP0327051A1 (de) 1989-08-09

Similar Documents

Publication Publication Date Title
DE68910490D1 (de) Verfahren zur Diamantabscheidung aus der Gasphase, auch von hochkristallinem Diamant.
ATA316378A (de) Verfahren zur herstellung von neuen anthra- cyclinen
ATA841778A (de) Verfahren zur herstellung von neuen nitrosubstituierten 1,4-dihydropyridinen
DE3751756T2 (de) Verfahren zum Abscheiden aus der Gasphase
DE3785686T2 (de) Sammelrohrherstellungsverfahren und durch ein solches Verfahren erhaltenes Sammelrohr.
DE69006605D1 (de) Verfahren zur Herstellung einer Einkristallschicht aus Diamant.
AT358734B (de) Verfahren zur herstellung von neuen anti- bakteriell wirksamen verbindungen
DE3787542D1 (de) Verfahren und vorrichtung zum niederschlagen aus der gasphase.
DE68908520T2 (de) Durch Zerstäubung abgeschiedene Nickelschicht und Verfahren zu deren Abscheidung.
DE69009799T2 (de) Verfahren zur Herstellung einer Einkristallschicht aus Diamant.
DE68908729D1 (de) Diamant und seine Darstellung durch ein Verfahren mittels Abscheidung aus der Gasphase.
AT368920B (de) Verfahren zur herstellung von buechsen aus streifenfoermigem material
DE69012409D1 (de) Vorrichtung zur Herstellung von Halbleitern durch Abscheidung aus der Gasphase.
DE68913157D1 (de) Verfahren zur herstellung von diamant aus der dampfphase.
ATA316278A (de) Verfahren zur herstellung von neuen anthra- cyclinen
DE68915465T2 (de) Verfahren zur Formung von Teilen vorgewählter Grösse aus Siliciumstäben.
ATA868977A (de) Verfahren zur herstellung von einheitlich aufgebauten copolymerisaten cyclischer diene
AT357675B (de) Verfahren zur herstellung von 1-n-(omega-amino- -alpha-hydroxyalkanoyl) kanamycinen
AT362054B (de) Verfahren zur reinigung von aus der zoapatl- pflanze erhaltenen extrakten
AT359490B (de) Verfahren zur hestellung von neuen 1,3,4- oxadiazolverbindungen
DE69029064D1 (de) Verfahren zum Aufsilizieren von metallischen Gegendstand durch chemische Abscheidung aus der Dampfphase
AT360502B (de) Verfahren zur herstellung von 1,4-dicyanobuten durch dimerisierung von acrylnitril
DD130006A1 (de) Verfahren zur herstellung vorwiegend rotationssymmetrischer bauteile aus metallischen werkstoffen
DE68911125T2 (de) Verfahren zur Herstellung der keramischen elektronischen Komponenten von mehreren Schichten.
ATA231581A (de) Verfahren zur hestellung von neuen nitrosubstituierten 1,4-dihydropyridinen

Legal Events

Date Code Title Description
8363 Opposition against the patent
8366 Restricted maintained after opposition proceedings
8320 Willingness to grant licences declared (paragraph 23)