JP7247945B2 - 酸化ガリウム系半導体及びその製造方法 - Google Patents
酸化ガリウム系半導体及びその製造方法 Download PDFInfo
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- JP7247945B2 JP7247945B2 JP2020077639A JP2020077639A JP7247945B2 JP 7247945 B2 JP7247945 B2 JP 7247945B2 JP 2020077639 A JP2020077639 A JP 2020077639A JP 2020077639 A JP2020077639 A JP 2020077639A JP 7247945 B2 JP7247945 B2 JP 7247945B2
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- gallium oxide
- based semiconductor
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- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 title claims description 107
- 239000004065 semiconductor Substances 0.000 title claims description 93
- 229910001195 gallium oxide Inorganic materials 0.000 title claims description 92
- 238000004519 manufacturing process Methods 0.000 title claims description 40
- 239000000758 substrate Substances 0.000 claims description 58
- 239000013078 crystal Substances 0.000 claims description 39
- 238000000034 method Methods 0.000 claims description 28
- 238000002441 X-ray diffraction Methods 0.000 claims description 22
- 239000000203 mixture Substances 0.000 claims description 15
- 238000004549 pulsed laser deposition Methods 0.000 claims description 12
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 64
- 239000000523 sample Substances 0.000 description 42
- 230000000052 comparative effect Effects 0.000 description 25
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 22
- 229910052742 iron Inorganic materials 0.000 description 21
- 239000010408 film Substances 0.000 description 20
- 238000002360 preparation method Methods 0.000 description 14
- 238000010586 diagram Methods 0.000 description 13
- 238000006467 substitution reaction Methods 0.000 description 13
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 10
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 9
- 229910052733 gallium Inorganic materials 0.000 description 7
- 239000000843 powder Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000011572 manganese Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 239000011573 trace mineral Substances 0.000 description 3
- 235000013619 trace mineral Nutrition 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
- MARDFMMXBWIRTK-UHFFFAOYSA-N [F].[Ar] Chemical compound [F].[Ar] MARDFMMXBWIRTK-UHFFFAOYSA-N 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 239000010431 corundum Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000011812 mixed powder Substances 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229910052730 francium Inorganic materials 0.000 description 1
- KLMCZVJOEAUDNE-UHFFFAOYSA-N francium atom Chemical compound [Fr] KLMCZVJOEAUDNE-UHFFFAOYSA-N 0.000 description 1
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052705 radium Inorganic materials 0.000 description 1
- HCWPIIXVSYCSAN-UHFFFAOYSA-N radium atom Chemical compound [Ra] HCWPIIXVSYCSAN-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
- H01L29/247—Amorphous materials
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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Description
〈1〉(Ga(1-x)Fex)2yO3(ただし、0.10≦x≦0.40及び0.8≦y≦1.2)で表される組成の混晶を有し、かつ
前記混晶が、ベータガリア構造を有する、
酸化ガリウム系半導体。
〈2〉前記ベータガリア構造に由来するX線回折ピークの半値幅が1度以下である、〈1〉項に記載の酸化ガリウム系半導体。
〈3〉前記xが0.10≦x≦0.30である、〈1〉又は〈2〉項に記載の酸化ガリウム系半導体。
〈4〉前記yが1.0である、〈1〉~〈3〉項のいずれか一項に記載の酸化ガリウム系半導体。
〈5〉〈1〉項に記載の酸化ガリウム系半導体の製造方法であって、
基板表面に、(Ga(1-x)Fex)2yO3(ただし、0.10≦x≦0.40及び0.8≦y≦1.2)で表される組成の混晶を、パルスレーザ堆積法で成膜すること、
を含み、
前記基板の温度をT℃としたとき、前記xと前記Tが、500x+800≦T<1000で表される関係を満足する、
酸化ガリウム系半導体の製造方法。
〈6〉前記xと前記Tが、500x+800≦T≦950で表される関係を満足する、〈5〉項に記載の酸化ガリウム系半導体の製造方法。
〈7〉前記パルスレーザ堆積法で用いるレーザが、紫外線パルスレーザである、〈5〉又は〈6〉項に記載の酸化ガリウム系半導体の製造方法。
〈8〉前記xが、0.10≦x≦0.30である、〈5〉~〈7〉項のいずれか一項に記載の酸化ガリウム系半導体の製造方法。
〈9〉前記yが1.0である、〈5〉~〈8〉項のいずれか一項に記載の酸化ガリウム系半導体の製造方法。
まず、本開示の酸化ガリウム系半導体の構成要件について説明する。
本開示の酸化ガリウム系半導体は、(Ga(1-x)Fex)2yO3で表される混晶を有する。この混晶は、酸化ガリウム(Ga2O3)のガリウムの一部が鉄によって置換されており、酸化ガリウム(Ga2O3)に鉄が固溶している。
本開示の酸化ガリウム系半導体中の混晶は、ベータガリア構造を有する。これにより、導電率及び耐電圧並びにこれらの安定性が向上する。本開示の酸化ガリウム系半導体のベータガリア構造は、酸化ガリウムの最安定相(β-Ga2O3)が有する結晶構造と同等である。
次に、本開示の酸化ガリウム系半導体の製造方法について説明する。本開示の酸化ガリウム系半導体の製造方法は成膜工程を含む。以下、成膜工程について説明する。
基板表面に、(Ga(1-x)Fex)2yO3(ただし、0.10≦x≦0.40及び0.8≦y≦1.2)で表される組成の混晶を、パルスレーザ堆積法で成膜して、本開示の酸化ガリウム半導体を得る。これについて、図面を用いて説明する。
これまで説明してきたこと以外でも、本開示の酸化ガリウム系半導体及びその製造方法は、特許請求の範囲に記載した内容の範囲内で種々の変形を加えることができる。上述したように、本開示の酸化ガリウム系半導体は、基板上に成膜される。本開示の酸化ガリウム半導体は、基板が付いたまま使用してもよいし、基板を除去して使用してもよい。基板を除去して使用する場合には、本開示の酸化ガリウム系半導体の製造方法に、基板除去工程を加える。基板除去の方法は、周知の方法、例えば、研磨及びラッピング等を適用することができる。
図1に示したパルスレーザ堆積装置100を用いて、次の手順で、実施例1~6及び比較例1~7の試料を準備した。
真空チャンバ10の内部に、ターゲット20及び基板30を設置し、真空排気装置14を用いて、真空チャンバ10の内部を真空引きした。真空チャンバ10の内部に、雰囲気ガス導入装置12から、酸素ガスを供給した。酸素ガスの流量は0.6sccmであり、真空チャンバ10の内部の圧力は0.8Paであった。
基板温度Tが900℃であり、そして、鉄の置換xが0.20であること以外、実施例1と同様に、実施例2の試料を準備した。
基板温度Tが950℃であり、そして、鉄の置換割合xが0.30であること以外、実施例1と同様に、実施例3の試料を準備した。
基板温度Tが900℃であること以外、実施例1と同様に実施例4の試料を準備した。
基板温度Tが950℃であること以外、実施例1と同様に実施例5の試料を準備した。
基板温度Tが950℃であること以外、実施例2と同様に実施例6の試料を準備した。
基板温度Tが750℃であること以外、実施例2と同様に比較例1の試料を準備した。
基板温度Tが850℃であること以外、実施例2と同様に比較例2の試料を準備した。
基板温度Tが950℃であり、そして、鉄の置換割合xが0.40であること以外、実施例1と同様に、比較例3の試料を準備した。
基板温度Tが800℃であること以外、実施例1と同様に比較例4の試料を準備した。
基板温度Tが650℃であること以外、実施例2と同様に比較例5の試料を準備した。
基板温度Tが800℃であること以外、実施例2と同様に比較例6の試料を準備した。
基板温度Tが900℃であること以外、比較例3と同様に比較例7の試料を準備した。
各試料について、X線回折分析を行った。また、実施例1~3及び比較例3の試料について、バンドギャップを評価(測定)した。バンドギャップは、光の透過率を測定することにより評価した。具体的には、エネルギーの異なる光を試料に照射し、その透過率を測定した。バンドギャップよりもエネルギーが小さい光のみが試料を通過(透過)するため、その透過率のエネルギー依存性からバンドギャップを求めた。
12 雰囲気ガス導入装置
14 真空排気装置
20 ターゲット
30 基板
40 レーザ導入口
50 酸化ガリウム系半導体
100 パルスレーザ堆積装置100
Claims (9)
- (Ga(1-x)Fex)2yO3(ただし、0.10≦x≦0.40及び0.8≦y≦1.2)で表される組成の混晶を有し、かつ
前記混晶が、ベータガリア構造を有する、
酸化ガリウム系半導体。 - 前記ベータガリア構造に由来するX線回折ピークの半値幅が1度以下である、請求項1に記載の酸化ガリウム系半導体。
- 前記xが0.10≦x≦0.30である、請求項1又は2に記載の酸化ガリウム系半導体。
- 前記yが1.0である、請求項1~3のいずれか一項に記載の酸化ガリウム系半導体。
- 請求項1に記載の酸化ガリウム系半導体の製造方法であって、
基板表面に、(Ga(1-x)Fex)2yO3(ただし、0.10≦x≦0.40及び0.8≦y≦1.2)で表される組成の混晶を、パルスレーザ堆積法で成膜すること、
を含み、
前記基板の温度をT℃としたとき、前記xと前記Tが、500x+800≦T<1000で表される関係を満足する、
酸化ガリウム系半導体の製造方法。 - 前記xと前記Tが、500x+800≦T≦950で表される関係を満足する、請求項5に記載の酸化ガリウム系半導体の製造方法。
- 前記パルスレーザ堆積法で用いるレーザが、紫外線パルスレーザである、請求項5又は6に記載の酸化ガリウム系半導体の製造方法。
- 前記xが、0.10≦x≦0.30である、請求項5~7のいずれか一項に記載の酸化ガリウム系半導体の製造方法。
- 前記yが1.0である、請求項5~8のいずれか一項に記載の酸化ガリウム系半導体の製造方法。
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2005235961A (ja) | 2004-02-18 | 2005-09-02 | Univ Waseda | Ga2O3系単結晶の導電率制御方法 |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005235961A (ja) | 2004-02-18 | 2005-09-02 | Univ Waseda | Ga2O3系単結晶の導電率制御方法 |
JP2007191365A (ja) | 2006-01-20 | 2007-08-02 | Japan Science & Technology Agency | 単結晶製造装置及びそれを用いた高圧単結晶製造方法 |
JP2014169206A (ja) | 2013-03-04 | 2014-09-18 | Tamura Seisakusho Co Ltd | Ga2O3系単結晶基板、及びその製造方法 |
JP2015017027A (ja) | 2013-10-17 | 2015-01-29 | 株式会社Flosfia | 半導体装置及びその製造方法、並びに結晶及びその製造方法 |
Non-Patent Citations (1)
Title |
---|
High-insulating β-Ga2O3 thin films by doping with a valence controllable Fe element,Applied Physics A Materials Science & Processing,2018年,124, Article number 611,Page 1-9 |
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