ES2246392T3 - Montaje de aparato optico en un disipador de calor. - Google Patents

Montaje de aparato optico en un disipador de calor.

Info

Publication number
ES2246392T3
ES2246392T3 ES02716152T ES02716152T ES2246392T3 ES 2246392 T3 ES2246392 T3 ES 2246392T3 ES 02716152 T ES02716152 T ES 02716152T ES 02716152 T ES02716152 T ES 02716152T ES 2246392 T3 ES2246392 T3 ES 2246392T3
Authority
ES
Spain
Prior art keywords
zone
optically
optically active
active
passive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES02716152T
Other languages
English (en)
Spanish (es)
Inventor
Craig James Hamilton
John Haig Marsh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Glasgow
Original Assignee
University of Glasgow
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Glasgow filed Critical University of Glasgow
Application granted granted Critical
Publication of ES2246392T3 publication Critical patent/ES2246392T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/162—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions made by diffusion or disordening of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Glass Compositions (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
  • Prostheses (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Cold Air Circulating Systems And Constructional Details In Refrigerators (AREA)
ES02716152T 2001-01-23 2002-01-23 Montaje de aparato optico en un disipador de calor. Expired - Lifetime ES2246392T3 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0101640A GB2371404B (en) 2001-01-23 2001-01-23 Improvements in or relating to optical devices
GB0101640 2001-01-23

Publications (1)

Publication Number Publication Date
ES2246392T3 true ES2246392T3 (es) 2006-02-16

Family

ID=9907274

Family Applications (1)

Application Number Title Priority Date Filing Date
ES02716152T Expired - Lifetime ES2246392T3 (es) 2001-01-23 2002-01-23 Montaje de aparato optico en un disipador de calor.

Country Status (9)

Country Link
US (1) US6671300B2 (enExample)
EP (1) EP1354381B1 (enExample)
JP (1) JP4027801B2 (enExample)
CN (1) CN1236534C (enExample)
AT (1) ATE298941T1 (enExample)
DE (1) DE60204848T2 (enExample)
ES (1) ES2246392T3 (enExample)
GB (1) GB2371404B (enExample)
WO (1) WO2002061898A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7333689B2 (en) * 2005-09-30 2008-02-19 The Trustees Of Princeton University Photonic integrated devices having reduced absorption loss
US20070218454A1 (en) * 2006-03-16 2007-09-20 Brennen Reid A Optical detection cell for micro-fluidics
US8647590B2 (en) * 2006-03-16 2014-02-11 Agilent Technologies, Inc. Optical detection cell with micro-fluidic chip
JP4697879B2 (ja) * 2006-05-09 2011-06-08 東京エレクトロン株式会社 サーバ装置、およびプログラム
US7826693B2 (en) 2006-10-26 2010-11-02 The Trustees Of Princeton University Monolithically integrated reconfigurable optical add-drop multiplexer
US10203461B2 (en) * 2015-09-04 2019-02-12 Raytheon Company Techniques for forming waveguides for use in laser systems or other systems and associated devices
JP7458134B2 (ja) * 2019-04-02 2024-03-29 ヌヴォトンテクノロジージャパン株式会社 半導体レーザ素子
US11588302B2 (en) 2019-06-21 2023-02-21 Seagate Technology Llc Optical switches

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54115088A (en) 1978-02-28 1979-09-07 Nec Corp Double hetero junction laser element of stripe type
JPS6054794B2 (ja) * 1979-11-01 1985-12-02 富士通株式会社 光半導体装置
US4511408A (en) 1982-04-22 1985-04-16 The Board Of Trustees Of The University Of Illinois Semiconductor device fabrication with disordering elements introduced into active region
US4639275A (en) 1982-04-22 1987-01-27 The Board Of Trustees Of The University Of Illinois Forming disordered layer by controlled diffusion in heterojunction III-V semiconductor
US4594603A (en) 1982-04-22 1986-06-10 Board Of Trustees Of The University Of Illinois Semiconductor device with disordered active region
US4585491A (en) 1983-09-02 1986-04-29 Xerox Corporation Wavelength tuning of quantum well lasers by thermal annealing
US4684653A (en) 1985-03-08 1987-08-04 The Trustees Of Princeton University Pyrido(2,3-d)pyrimidine derivatives
US4727556A (en) 1985-12-30 1988-02-23 Xerox Corporation Semiconductor lasers fabricated from impurity induced disordering
US4871690A (en) 1986-01-21 1989-10-03 Xerox Corporation Semiconductor structures utilizing semiconductor support means selectively pretreated with migratory defects
GB2198603A (en) 1986-12-05 1988-06-15 Philips Electronic Associated Divider circuit
US4857971A (en) 1987-03-23 1989-08-15 Xerox Corporation (IV)x (III-V)1-x alloys formed in situ in III-V heterostructures
DE3737191A1 (de) * 1987-11-03 1989-05-24 Fraunhofer Ges Forschung Halbleiterdiodenlaser
US5327444A (en) * 1989-04-20 1994-07-05 Massachusetts Institute Of Technology Solid state waveguide lasers
DE3925201A1 (de) * 1989-07-29 1991-02-07 Messerschmitt Boelkow Blohm Optische bank zur halterung optischer, elektrischer u.a. komponenten
JP2869279B2 (ja) * 1992-09-16 1999-03-10 三菱電機株式会社 半導体レーザダイオード及びその製造方法並びに半導体レーザダイオードアレイ
US5384797A (en) 1992-09-21 1995-01-24 Sdl, Inc. Monolithic multi-wavelength laser diode array
JPH07162086A (ja) * 1993-12-10 1995-06-23 Mitsubishi Electric Corp 半導体レーザの製造方法
US5521406A (en) * 1994-08-31 1996-05-28 Texas Instruments Incorporated Integrated circuit with improved thermal impedance
JPH08330672A (ja) * 1995-05-31 1996-12-13 Nec Corp 半導体レーザ装置
US5680412A (en) * 1995-07-26 1997-10-21 Demaria Electrooptics Systems, Inc. Apparatus for improving the optical intensity induced damage limit of optical quality crystals
EP0757393A3 (en) * 1995-08-02 1999-11-03 Matsushita Electric Industrial Co., Ltd. Semiconductor light emitting element and method for fabricating the same
US6326646B1 (en) * 1999-11-24 2001-12-04 Lucent Technologies, Inc. Mounting technology for intersubband light emitters

Also Published As

Publication number Publication date
GB0101640D0 (en) 2001-03-07
JP4027801B2 (ja) 2007-12-26
US20020097763A1 (en) 2002-07-25
EP1354381A1 (en) 2003-10-22
DE60204848D1 (de) 2005-08-04
DE60204848T2 (de) 2006-05-11
EP1354381B1 (en) 2005-06-29
GB2371404B (en) 2003-07-09
CN1236534C (zh) 2006-01-11
CN1488182A (zh) 2004-04-07
GB2371404A (en) 2002-07-24
JP2004523117A (ja) 2004-07-29
US6671300B2 (en) 2003-12-30
WO2002061898A1 (en) 2002-08-08
ATE298941T1 (de) 2005-07-15

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