CN100380755C - 多波长半导体激光装置 - Google Patents
多波长半导体激光装置 Download PDFInfo
- Publication number
- CN100380755C CN100380755C CNB2005100800120A CN200510080012A CN100380755C CN 100380755 C CN100380755 C CN 100380755C CN B2005100800120 A CNB2005100800120 A CN B2005100800120A CN 200510080012 A CN200510080012 A CN 200510080012A CN 100380755 C CN100380755 C CN 100380755C
- Authority
- CN
- China
- Prior art keywords
- ridge
- semiconductor laser
- conductivity type
- laser device
- wavelength semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08086—Multiple-wavelength emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08086—Multiple-wavelength emission
- H01S3/0809—Two-wavelenghth emission
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040087199A KR100568322B1 (ko) | 2004-10-29 | 2004-10-29 | 다파장 반도체 레이저 소자 |
KR1020040087199 | 2004-10-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1767285A CN1767285A (zh) | 2006-05-03 |
CN100380755C true CN100380755C (zh) | 2008-04-09 |
Family
ID=36261819
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100800120A Expired - Fee Related CN100380755C (zh) | 2004-10-29 | 2005-06-24 | 多波长半导体激光装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7460579B2 (zh) |
JP (1) | JP4372052B2 (zh) |
KR (1) | KR100568322B1 (zh) |
CN (1) | CN100380755C (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100074307A1 (en) * | 2007-05-04 | 2010-03-25 | The Governors Of The University Of Alberta | A p-order metric uwb receiver structure with improved performance in multiple access interference-plus-noise multipath channels |
DE102008061152B4 (de) * | 2008-12-09 | 2017-03-02 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
TWI530720B (zh) * | 2012-06-01 | 2016-04-21 | 鴻海精密工業股份有限公司 | 光波導及光波導的製作方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4833687A (en) * | 1985-12-18 | 1989-05-23 | Sony Corporation | Distributed feedback semiconductor laser |
JPH05102613A (ja) * | 1991-10-09 | 1993-04-23 | Fuji Xerox Co Ltd | 多波長半導体レーザ装置 |
CN1287397A (zh) * | 1999-09-08 | 2001-03-14 | 索尼株式会社 | 半导体激光器及其制造方法 |
US6628689B2 (en) * | 2000-03-14 | 2003-09-30 | Kabushiki Kaisha Toshiba | Semiconductor laser device and method of fabricating the same |
US6643310B2 (en) * | 2000-02-29 | 2003-11-04 | Sony Corporation | Semiconductor laser apparatus, laser coupler, data reproduction apparatus, data recording apparatus and production method of semiconductor laser apparatus |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2645871B2 (ja) * | 1988-10-20 | 1997-08-25 | キヤノン株式会社 | 多波長半導体レーザ装置 |
US5033053A (en) * | 1989-03-30 | 1991-07-16 | Canon Kabushiki Kaisha | Semiconductor laser device having plurality of layers for emitting lights of different wavelengths and method of driving the same |
US5465263A (en) * | 1992-12-12 | 1995-11-07 | Xerox Corporation | Monolithic, multiple wavelength, dual polarization laser diode arrays |
JPH10117040A (ja) | 1996-10-08 | 1998-05-06 | Nec Corp | 半導体レーザ素子及びその製造方法 |
JP3862894B2 (ja) * | 1999-08-18 | 2006-12-27 | 株式会社東芝 | 半導体レーザ装置 |
US6456429B1 (en) * | 2000-11-15 | 2002-09-24 | Onetta, Inc. | Double-pass optical amplifier |
US20050105577A1 (en) * | 2003-11-13 | 2005-05-19 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device and manufacturing method for the same |
-
2004
- 2004-10-29 KR KR1020040087199A patent/KR100568322B1/ko not_active IP Right Cessation
-
2005
- 2005-06-15 JP JP2005174742A patent/JP4372052B2/ja not_active Expired - Fee Related
- 2005-06-23 US US11/159,350 patent/US7460579B2/en not_active Expired - Fee Related
- 2005-06-24 CN CNB2005100800120A patent/CN100380755C/zh not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4833687A (en) * | 1985-12-18 | 1989-05-23 | Sony Corporation | Distributed feedback semiconductor laser |
JPH05102613A (ja) * | 1991-10-09 | 1993-04-23 | Fuji Xerox Co Ltd | 多波長半導体レーザ装置 |
CN1287397A (zh) * | 1999-09-08 | 2001-03-14 | 索尼株式会社 | 半导体激光器及其制造方法 |
US6643310B2 (en) * | 2000-02-29 | 2003-11-04 | Sony Corporation | Semiconductor laser apparatus, laser coupler, data reproduction apparatus, data recording apparatus and production method of semiconductor laser apparatus |
US6628689B2 (en) * | 2000-03-14 | 2003-09-30 | Kabushiki Kaisha Toshiba | Semiconductor laser device and method of fabricating the same |
Also Published As
Publication number | Publication date |
---|---|
JP2006128614A (ja) | 2006-05-18 |
KR100568322B1 (ko) | 2006-04-05 |
US7460579B2 (en) | 2008-12-02 |
US20060093007A1 (en) | 2006-05-04 |
CN1767285A (zh) | 2006-05-03 |
JP4372052B2 (ja) | 2009-11-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SAMSUNG LED CO., LTD. Free format text: FORMER OWNER: SAMSUNG ELECTRO-MECHANICS CO., LTD. Effective date: 20100920 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: GYEONGGI, SOUTH KOREA TO: SUWON CITY, GYEONGGI, SOUTH KOREA |
|
TR01 | Transfer of patent right |
Effective date of registration: 20100920 Address after: Gyeonggi Do Korea Suwon Patentee after: Samsung LED Co., Ltd. Address before: Gyeonggi Do, South Korea Patentee before: Samsung Electro-Mechanics Co., Ltd. |
|
ASS | Succession or assignment of patent right |
Owner name: SAMSUNG ELECTRONICS CO., LTD. Free format text: FORMER OWNER: SAMSUNG LED CO., LTD. Effective date: 20121211 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20121211 Address after: Gyeonggi Do, South Korea Patentee after: Samsung Electronics Co., Ltd. Address before: Gyeonggi Do Korea Suwon Patentee before: Samsung LED Co., Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080409 Termination date: 20150624 |
|
EXPY | Termination of patent right or utility model |