JP4027801B2 - 光学装置のヒートシンク上への取り付け - Google Patents

光学装置のヒートシンク上への取り付け Download PDF

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Publication number
JP4027801B2
JP4027801B2 JP2002561333A JP2002561333A JP4027801B2 JP 4027801 B2 JP4027801 B2 JP 4027801B2 JP 2002561333 A JP2002561333 A JP 2002561333A JP 2002561333 A JP2002561333 A JP 2002561333A JP 4027801 B2 JP4027801 B2 JP 4027801B2
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JP
Japan
Prior art keywords
region
optically active
optical
active device
heat sink
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Expired - Fee Related
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JP2002561333A
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English (en)
Japanese (ja)
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JP2004523117A5 (enExample
JP2004523117A (ja
Inventor
クレイグ， ジェームズ ハミルトン，
ジョン， ヘイグ マーシュ，
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University of Glasgow
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University of Glasgow
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/162—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions made by diffusion or disordening of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Glass Compositions (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
  • Prostheses (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Cold Air Circulating Systems And Constructional Details In Refrigerators (AREA)
JP2002561333A 2001-01-23 2002-01-23 光学装置のヒートシンク上への取り付け Expired - Fee Related JP4027801B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0101640A GB2371404B (en) 2001-01-23 2001-01-23 Improvements in or relating to optical devices
PCT/GB2002/000293 WO2002061898A1 (en) 2001-01-23 2002-01-23 Mounting of optical device on heat sink

Publications (3)

Publication Number Publication Date
JP2004523117A JP2004523117A (ja) 2004-07-29
JP2004523117A5 JP2004523117A5 (enExample) 2005-12-22
JP4027801B2 true JP4027801B2 (ja) 2007-12-26

Family

ID=9907274

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002561333A Expired - Fee Related JP4027801B2 (ja) 2001-01-23 2002-01-23 光学装置のヒートシンク上への取り付け

Country Status (9)

Country Link
US (1) US6671300B2 (enExample)
EP (1) EP1354381B1 (enExample)
JP (1) JP4027801B2 (enExample)
CN (1) CN1236534C (enExample)
AT (1) ATE298941T1 (enExample)
DE (1) DE60204848T2 (enExample)
ES (1) ES2246392T3 (enExample)
GB (1) GB2371404B (enExample)
WO (1) WO2002061898A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7333689B2 (en) * 2005-09-30 2008-02-19 The Trustees Of Princeton University Photonic integrated devices having reduced absorption loss
US20070218454A1 (en) * 2006-03-16 2007-09-20 Brennen Reid A Optical detection cell for micro-fluidics
US8647590B2 (en) * 2006-03-16 2014-02-11 Agilent Technologies, Inc. Optical detection cell with micro-fluidic chip
JP4697879B2 (ja) * 2006-05-09 2011-06-08 東京エレクトロン株式会社 サーバ装置、およびプログラム
US7826693B2 (en) 2006-10-26 2010-11-02 The Trustees Of Princeton University Monolithically integrated reconfigurable optical add-drop multiplexer
US10203461B2 (en) * 2015-09-04 2019-02-12 Raytheon Company Techniques for forming waveguides for use in laser systems or other systems and associated devices
JP7458134B2 (ja) * 2019-04-02 2024-03-29 ヌヴォトンテクノロジージャパン株式会社 半導体レーザ素子
US11588302B2 (en) 2019-06-21 2023-02-21 Seagate Technology Llc Optical switches

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54115088A (en) 1978-02-28 1979-09-07 Nec Corp Double hetero junction laser element of stripe type
JPS6054794B2 (ja) * 1979-11-01 1985-12-02 富士通株式会社 光半導体装置
US4511408A (en) 1982-04-22 1985-04-16 The Board Of Trustees Of The University Of Illinois Semiconductor device fabrication with disordering elements introduced into active region
US4639275A (en) 1982-04-22 1987-01-27 The Board Of Trustees Of The University Of Illinois Forming disordered layer by controlled diffusion in heterojunction III-V semiconductor
US4594603A (en) 1982-04-22 1986-06-10 Board Of Trustees Of The University Of Illinois Semiconductor device with disordered active region
US4585491A (en) 1983-09-02 1986-04-29 Xerox Corporation Wavelength tuning of quantum well lasers by thermal annealing
US4684653A (en) 1985-03-08 1987-08-04 The Trustees Of Princeton University Pyrido(2,3-d)pyrimidine derivatives
US4727556A (en) 1985-12-30 1988-02-23 Xerox Corporation Semiconductor lasers fabricated from impurity induced disordering
US4871690A (en) 1986-01-21 1989-10-03 Xerox Corporation Semiconductor structures utilizing semiconductor support means selectively pretreated with migratory defects
GB2198603A (en) 1986-12-05 1988-06-15 Philips Electronic Associated Divider circuit
US4857971A (en) 1987-03-23 1989-08-15 Xerox Corporation (IV)x (III-V)1-x alloys formed in situ in III-V heterostructures
DE3737191A1 (de) * 1987-11-03 1989-05-24 Fraunhofer Ges Forschung Halbleiterdiodenlaser
US5327444A (en) * 1989-04-20 1994-07-05 Massachusetts Institute Of Technology Solid state waveguide lasers
DE3925201A1 (de) * 1989-07-29 1991-02-07 Messerschmitt Boelkow Blohm Optische bank zur halterung optischer, elektrischer u.a. komponenten
JP2869279B2 (ja) * 1992-09-16 1999-03-10 三菱電機株式会社 半導体レーザダイオード及びその製造方法並びに半導体レーザダイオードアレイ
US5384797A (en) 1992-09-21 1995-01-24 Sdl, Inc. Monolithic multi-wavelength laser diode array
JPH07162086A (ja) * 1993-12-10 1995-06-23 Mitsubishi Electric Corp 半導体レーザの製造方法
US5521406A (en) * 1994-08-31 1996-05-28 Texas Instruments Incorporated Integrated circuit with improved thermal impedance
JPH08330672A (ja) * 1995-05-31 1996-12-13 Nec Corp 半導体レーザ装置
US5680412A (en) * 1995-07-26 1997-10-21 Demaria Electrooptics Systems, Inc. Apparatus for improving the optical intensity induced damage limit of optical quality crystals
EP0757393A3 (en) * 1995-08-02 1999-11-03 Matsushita Electric Industrial Co., Ltd. Semiconductor light emitting element and method for fabricating the same
US6326646B1 (en) * 1999-11-24 2001-12-04 Lucent Technologies, Inc. Mounting technology for intersubband light emitters

Also Published As

Publication number Publication date
GB0101640D0 (en) 2001-03-07
US20020097763A1 (en) 2002-07-25
EP1354381A1 (en) 2003-10-22
DE60204848D1 (de) 2005-08-04
DE60204848T2 (de) 2006-05-11
EP1354381B1 (en) 2005-06-29
GB2371404B (en) 2003-07-09
CN1236534C (zh) 2006-01-11
CN1488182A (zh) 2004-04-07
GB2371404A (en) 2002-07-24
JP2004523117A (ja) 2004-07-29
US6671300B2 (en) 2003-12-30
WO2002061898A1 (en) 2002-08-08
ATE298941T1 (de) 2005-07-15
ES2246392T3 (es) 2006-02-16

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