CN1236534C - 光学器件或与光学器件有关的改进 - Google Patents

光学器件或与光学器件有关的改进 Download PDF

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Publication number
CN1236534C
CN1236534C CNB028040236A CN02804023A CN1236534C CN 1236534 C CN1236534 C CN 1236534C CN B028040236 A CNB028040236 A CN B028040236A CN 02804023 A CN02804023 A CN 02804023A CN 1236534 C CN1236534 C CN 1236534C
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CN
China
Prior art keywords
region
optically
optical
active
active device
Prior art date
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Expired - Fee Related
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CNB028040236A
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English (en)
Chinese (zh)
Other versions
CN1488182A (zh
Inventor
克雷格·J·汉密尔顿
约翰·H·马什
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Intense Ltd By Share Ltd
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University of Glasgow
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Publication date
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Publication of CN1488182A publication Critical patent/CN1488182A/zh
Application granted granted Critical
Publication of CN1236534C publication Critical patent/CN1236534C/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/162—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions made by diffusion or disordening of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Glass Compositions (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
  • Prostheses (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Cold Air Circulating Systems And Constructional Details In Refrigerators (AREA)
CNB028040236A 2001-01-23 2002-01-23 光学器件或与光学器件有关的改进 Expired - Fee Related CN1236534C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0101640A GB2371404B (en) 2001-01-23 2001-01-23 Improvements in or relating to optical devices
GB0101640.1 2001-01-23

Publications (2)

Publication Number Publication Date
CN1488182A CN1488182A (zh) 2004-04-07
CN1236534C true CN1236534C (zh) 2006-01-11

Family

ID=9907274

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB028040236A Expired - Fee Related CN1236534C (zh) 2001-01-23 2002-01-23 光学器件或与光学器件有关的改进

Country Status (9)

Country Link
US (1) US6671300B2 (enExample)
EP (1) EP1354381B1 (enExample)
JP (1) JP4027801B2 (enExample)
CN (1) CN1236534C (enExample)
AT (1) ATE298941T1 (enExample)
DE (1) DE60204848T2 (enExample)
ES (1) ES2246392T3 (enExample)
GB (1) GB2371404B (enExample)
WO (1) WO2002061898A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7333689B2 (en) * 2005-09-30 2008-02-19 The Trustees Of Princeton University Photonic integrated devices having reduced absorption loss
US20070218454A1 (en) * 2006-03-16 2007-09-20 Brennen Reid A Optical detection cell for micro-fluidics
US8647590B2 (en) * 2006-03-16 2014-02-11 Agilent Technologies, Inc. Optical detection cell with micro-fluidic chip
JP4697879B2 (ja) * 2006-05-09 2011-06-08 東京エレクトロン株式会社 サーバ装置、およびプログラム
US7826693B2 (en) 2006-10-26 2010-11-02 The Trustees Of Princeton University Monolithically integrated reconfigurable optical add-drop multiplexer
US10203461B2 (en) * 2015-09-04 2019-02-12 Raytheon Company Techniques for forming waveguides for use in laser systems or other systems and associated devices
JP7458134B2 (ja) * 2019-04-02 2024-03-29 ヌヴォトンテクノロジージャパン株式会社 半導体レーザ素子
US11588302B2 (en) 2019-06-21 2023-02-21 Seagate Technology Llc Optical switches

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54115088A (en) 1978-02-28 1979-09-07 Nec Corp Double hetero junction laser element of stripe type
JPS6054794B2 (ja) * 1979-11-01 1985-12-02 富士通株式会社 光半導体装置
US4511408A (en) 1982-04-22 1985-04-16 The Board Of Trustees Of The University Of Illinois Semiconductor device fabrication with disordering elements introduced into active region
US4639275A (en) 1982-04-22 1987-01-27 The Board Of Trustees Of The University Of Illinois Forming disordered layer by controlled diffusion in heterojunction III-V semiconductor
US4594603A (en) 1982-04-22 1986-06-10 Board Of Trustees Of The University Of Illinois Semiconductor device with disordered active region
US4585491A (en) 1983-09-02 1986-04-29 Xerox Corporation Wavelength tuning of quantum well lasers by thermal annealing
US4684653A (en) 1985-03-08 1987-08-04 The Trustees Of Princeton University Pyrido(2,3-d)pyrimidine derivatives
US4727556A (en) 1985-12-30 1988-02-23 Xerox Corporation Semiconductor lasers fabricated from impurity induced disordering
US4871690A (en) 1986-01-21 1989-10-03 Xerox Corporation Semiconductor structures utilizing semiconductor support means selectively pretreated with migratory defects
GB2198603A (en) 1986-12-05 1988-06-15 Philips Electronic Associated Divider circuit
US4857971A (en) 1987-03-23 1989-08-15 Xerox Corporation (IV)x (III-V)1-x alloys formed in situ in III-V heterostructures
DE3737191A1 (de) * 1987-11-03 1989-05-24 Fraunhofer Ges Forschung Halbleiterdiodenlaser
US5327444A (en) * 1989-04-20 1994-07-05 Massachusetts Institute Of Technology Solid state waveguide lasers
DE3925201A1 (de) * 1989-07-29 1991-02-07 Messerschmitt Boelkow Blohm Optische bank zur halterung optischer, elektrischer u.a. komponenten
JP2869279B2 (ja) * 1992-09-16 1999-03-10 三菱電機株式会社 半導体レーザダイオード及びその製造方法並びに半導体レーザダイオードアレイ
US5384797A (en) 1992-09-21 1995-01-24 Sdl, Inc. Monolithic multi-wavelength laser diode array
JPH07162086A (ja) * 1993-12-10 1995-06-23 Mitsubishi Electric Corp 半導体レーザの製造方法
US5521406A (en) * 1994-08-31 1996-05-28 Texas Instruments Incorporated Integrated circuit with improved thermal impedance
JPH08330672A (ja) * 1995-05-31 1996-12-13 Nec Corp 半導体レーザ装置
US5680412A (en) * 1995-07-26 1997-10-21 Demaria Electrooptics Systems, Inc. Apparatus for improving the optical intensity induced damage limit of optical quality crystals
EP0757393A3 (en) * 1995-08-02 1999-11-03 Matsushita Electric Industrial Co., Ltd. Semiconductor light emitting element and method for fabricating the same
US6326646B1 (en) * 1999-11-24 2001-12-04 Lucent Technologies, Inc. Mounting technology for intersubband light emitters

Also Published As

Publication number Publication date
GB0101640D0 (en) 2001-03-07
JP4027801B2 (ja) 2007-12-26
US20020097763A1 (en) 2002-07-25
EP1354381A1 (en) 2003-10-22
DE60204848D1 (de) 2005-08-04
DE60204848T2 (de) 2006-05-11
EP1354381B1 (en) 2005-06-29
GB2371404B (en) 2003-07-09
CN1488182A (zh) 2004-04-07
GB2371404A (en) 2002-07-24
JP2004523117A (ja) 2004-07-29
US6671300B2 (en) 2003-12-30
WO2002061898A1 (en) 2002-08-08
ATE298941T1 (de) 2005-07-15
ES2246392T3 (es) 2006-02-16

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SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
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Owner name: INTENSE CO., LTD.

Free format text: FORMER OWNER: THE UNIVERSITY COURT OF THE UNIVERSITY OF GLASGOW

Effective date: 20120223

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20120223

Address after: new jersey

Patentee after: Intense Limited by Share Ltd

Address before: British Glasgow

Patentee before: Univ. Court of Univ. of Glasgow

CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20060111

Termination date: 20150123

EXPY Termination of patent right or utility model