JP2004510354A - 低減された平均自由行程長を有する半導体材料を含む本体を作製する方法およびこの方法を用いて作製された本体 - Google Patents
低減された平均自由行程長を有する半導体材料を含む本体を作製する方法およびこの方法を用いて作製された本体 Download PDFInfo
- Publication number
- JP2004510354A JP2004510354A JP2002531498A JP2002531498A JP2004510354A JP 2004510354 A JP2004510354 A JP 2004510354A JP 2002531498 A JP2002531498 A JP 2002531498A JP 2002531498 A JP2002531498 A JP 2002531498A JP 2004510354 A JP2004510354 A JP 2004510354A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- path length
- semiconductor material
- free path
- mean free
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims abstract description 109
- 239000004065 semiconductor Substances 0.000 title claims abstract description 108
- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000013078 crystal Substances 0.000 claims abstract description 235
- 239000002800 charge carrier Substances 0.000 claims abstract description 68
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 239000013256 coordination polymer Substances 0.000 claims abstract description 31
- 239000012535 impurity Substances 0.000 claims description 31
- 239000002245 particle Substances 0.000 claims description 29
- 230000007704 transition Effects 0.000 claims description 12
- 238000000407 epitaxy Methods 0.000 claims description 8
- 235000012431 wafers Nutrition 0.000 claims 4
- 238000010586 diagram Methods 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000004943 liquid phase epitaxy Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/50—Physical imperfections
- H10D62/53—Physical imperfections the imperfections being within the semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/60—Impurity distributions or concentrations
Landscapes
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10048437A DE10048437A1 (de) | 2000-09-29 | 2000-09-29 | Verfahren zum Herstellen eines Körpers aus Halbleitermaterial mit reduzierter mittlerer freier Weglänge und mit dem Verfahren hergestellter Körper |
| PCT/EP2001/009866 WO2002027802A1 (de) | 2000-09-29 | 2001-08-27 | Verfahren zum herstellen eines körpers aus halbleitermaterial mit reduzierter mittlerer freier weglänge |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010246899A Division JP5566260B2 (ja) | 2000-09-29 | 2010-11-02 | 低減された平均自由行程長を有する半導体材料を含む本体を作製する方法およびこの方法を用いて作製された本体 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2004510354A true JP2004510354A (ja) | 2004-04-02 |
Family
ID=7658183
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002531498A Pending JP2004510354A (ja) | 2000-09-29 | 2001-08-27 | 低減された平均自由行程長を有する半導体材料を含む本体を作製する方法およびこの方法を用いて作製された本体 |
| JP2010246899A Expired - Fee Related JP5566260B2 (ja) | 2000-09-29 | 2010-11-02 | 低減された平均自由行程長を有する半導体材料を含む本体を作製する方法およびこの方法を用いて作製された本体 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010246899A Expired - Fee Related JP5566260B2 (ja) | 2000-09-29 | 2010-11-02 | 低減された平均自由行程長を有する半導体材料を含む本体を作製する方法およびこの方法を用いて作製された本体 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9608128B2 (enExample) |
| EP (1) | EP1320897B1 (enExample) |
| JP (2) | JP2004510354A (enExample) |
| KR (1) | KR100898759B1 (enExample) |
| DE (1) | DE10048437A1 (enExample) |
| WO (1) | WO2002027802A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10048437A1 (de) | 2000-09-29 | 2002-04-18 | Eupec Gmbh & Co Kg | Verfahren zum Herstellen eines Körpers aus Halbleitermaterial mit reduzierter mittlerer freier Weglänge und mit dem Verfahren hergestellter Körper |
| DE10207339A1 (de) * | 2002-02-21 | 2003-09-11 | Infineon Technologies Ag | Verfahren zur Reduzierung der Beweglichkeit freier Ladungsträger in einem Halbleiterkörper |
| DE102010046215B4 (de) * | 2010-09-21 | 2019-01-03 | Infineon Technologies Austria Ag | Halbleiterkörper mit verspanntem Bereich, Elektronisches Bauelement und ein Verfahren zum Erzeugen des Halbleiterkörpers. |
| CN103700712B (zh) * | 2012-09-27 | 2017-05-03 | 比亚迪股份有限公司 | 一种快恢复二极管的结构及其制造方法 |
| CN104701162A (zh) * | 2013-12-06 | 2015-06-10 | 江苏物联网研究发展中心 | 半导体器件、pin二极管和igbt的制作方法 |
| DE102015111213B4 (de) | 2015-07-10 | 2023-05-04 | Infineon Technologies Ag | Verfahren zum Verringern einer bipolaren Degradation bei einem SiC-Halbleiterbauelement und Halbleiterbauelement |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01199469A (ja) * | 1988-02-04 | 1989-08-10 | Toshiba Corp | 半導体装置 |
| US5102810A (en) * | 1990-03-13 | 1992-04-07 | General Instrument Corp. | Method for controlling the switching speed of bipolar power devices |
| JPH1012628A (ja) * | 1996-06-20 | 1998-01-16 | Nec Corp | 半導体基板およびその製造方法、並びに半導体素子 |
| JPH1140633A (ja) * | 1997-06-30 | 1999-02-12 | Harris Corp | 半導体装置におけるマイノリティキャリアのライフタイム制御方法及び装置 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4717681A (en) * | 1986-05-19 | 1988-01-05 | Texas Instruments Incorporated | Method of making a heterojunction bipolar transistor with SIPOS |
| JP2579979B2 (ja) * | 1987-02-26 | 1997-02-12 | 株式会社東芝 | 半導体素子の製造方法 |
| US5159429A (en) * | 1990-01-23 | 1992-10-27 | International Business Machines Corporation | Semiconductor device structure employing a multi-level epitaxial structure and method of manufacturing same |
| DE4223914C2 (de) * | 1992-06-30 | 1996-01-25 | Fraunhofer Ges Forschung | Verfahren zum Herstellen eines vertikalen Leistungsbauelementes mit reduzierter Minoritätsträgerlebensdauer in dessen Driftstrecke |
| EP0622834A3 (en) * | 1993-04-30 | 1998-02-11 | International Business Machines Corporation | Method to prevent latch-up and improve breakdown voltage in SOI MOSFETS |
| JPH07107935A (ja) * | 1993-08-18 | 1995-04-25 | Kaneto Shoji Kk | 豆腐連続自動製造装置 |
| JP3198766B2 (ja) | 1993-12-27 | 2001-08-13 | 日産自動車株式会社 | 電導度変調型トランジスタ |
| JP2979964B2 (ja) | 1994-07-25 | 1999-11-22 | 株式会社日立製作所 | 半導体装置及びそれを用いたインバータ装置 |
| US6037632A (en) * | 1995-11-06 | 2000-03-14 | Kabushiki Kaisha Toshiba | Semiconductor device |
| JP3394383B2 (ja) * | 1996-03-18 | 2003-04-07 | 三菱電機株式会社 | サイリスタの製造方法およびサイリスタ |
| WO1998015010A1 (de) * | 1996-09-30 | 1998-04-09 | Eupec Europäische Gesellschaft Für Leistungshalbleiter Mbh + Co. Kg | Thyristor mit durchbruchbereich |
| TW396628B (en) * | 1997-09-04 | 2000-07-01 | Nat Science Council | Structure and process for SiC single crystal/Si single crystal hetero-junction negative differential resistance |
| JPH1199469A (ja) | 1997-09-30 | 1999-04-13 | Nisshin Steel Co Ltd | 金属管の内面研磨方法 |
| DE19981445B4 (de) * | 1998-07-29 | 2005-09-22 | Infineon Technologies Ag | Leistungshalbleiter mit reduziertem Sperrstrom |
| DE10030381B4 (de) * | 2000-06-21 | 2005-04-14 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG | Leistungshalbleiterbauelement aufweisend einen Körper aus Halbleitermaterial mit Übergang zwischen zueinander entgegengesetzten Leiterfähigkeitstypen |
| DE10048437A1 (de) | 2000-09-29 | 2002-04-18 | Eupec Gmbh & Co Kg | Verfahren zum Herstellen eines Körpers aus Halbleitermaterial mit reduzierter mittlerer freier Weglänge und mit dem Verfahren hergestellter Körper |
-
2000
- 2000-09-29 DE DE10048437A patent/DE10048437A1/de not_active Ceased
-
2001
- 2001-08-27 WO PCT/EP2001/009866 patent/WO2002027802A1/de not_active Ceased
- 2001-08-27 EP EP01985777A patent/EP1320897B1/de not_active Expired - Lifetime
- 2001-08-27 KR KR1020037004420A patent/KR100898759B1/ko not_active Expired - Fee Related
- 2001-08-27 JP JP2002531498A patent/JP2004510354A/ja active Pending
-
2003
- 2003-03-20 US US10/392,509 patent/US9608128B2/en not_active Expired - Fee Related
-
2010
- 2010-11-02 JP JP2010246899A patent/JP5566260B2/ja not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01199469A (ja) * | 1988-02-04 | 1989-08-10 | Toshiba Corp | 半導体装置 |
| US5102810A (en) * | 1990-03-13 | 1992-04-07 | General Instrument Corp. | Method for controlling the switching speed of bipolar power devices |
| JPH1012628A (ja) * | 1996-06-20 | 1998-01-16 | Nec Corp | 半導体基板およびその製造方法、並びに半導体素子 |
| JPH1140633A (ja) * | 1997-06-30 | 1999-02-12 | Harris Corp | 半導体装置におけるマイノリティキャリアのライフタイム制御方法及び装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1320897B1 (de) | 2012-12-05 |
| US20030154912A1 (en) | 2003-08-21 |
| WO2002027802A1 (de) | 2002-04-04 |
| US9608128B2 (en) | 2017-03-28 |
| JP2011061226A (ja) | 2011-03-24 |
| DE10048437A1 (de) | 2002-04-18 |
| KR100898759B1 (ko) | 2009-05-25 |
| EP1320897A1 (de) | 2003-06-25 |
| JP5566260B2 (ja) | 2014-08-06 |
| KR20030070887A (ko) | 2003-09-02 |
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