KR100898759B1 - 평균자유경로길이가 줄어든 도핑된 반도체 재료로 이루어진 몸체의 제조방법 및 상기 도핑된 반도체 재료의 몸체 - Google Patents

평균자유경로길이가 줄어든 도핑된 반도체 재료로 이루어진 몸체의 제조방법 및 상기 도핑된 반도체 재료의 몸체 Download PDF

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KR100898759B1
KR100898759B1 KR1020037004420A KR20037004420A KR100898759B1 KR 100898759 B1 KR100898759 B1 KR 100898759B1 KR 1020037004420 A KR1020037004420 A KR 1020037004420A KR 20037004420 A KR20037004420 A KR 20037004420A KR 100898759 B1 KR100898759 B1 KR 100898759B1
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semiconductor material
doped semiconductor
path length
free path
crystal layer
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KR20030070887A (ko
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카르탈벨리
쉴체한스-요아킴
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오이펙 오이로패이쉐 게젤샤프트 퓌어 라이스퉁스할브라이터 엠베하
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/53—Physical imperfections the imperfections being within the semiconductor body 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations

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  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020037004420A 2000-09-29 2001-08-27 평균자유경로길이가 줄어든 도핑된 반도체 재료로 이루어진 몸체의 제조방법 및 상기 도핑된 반도체 재료의 몸체 Expired - Fee Related KR100898759B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10048437.9 2000-09-29
DE10048437A DE10048437A1 (de) 2000-09-29 2000-09-29 Verfahren zum Herstellen eines Körpers aus Halbleitermaterial mit reduzierter mittlerer freier Weglänge und mit dem Verfahren hergestellter Körper
PCT/EP2001/009866 WO2002027802A1 (de) 2000-09-29 2001-08-27 Verfahren zum herstellen eines körpers aus halbleitermaterial mit reduzierter mittlerer freier weglänge

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KR20030070887A KR20030070887A (ko) 2003-09-02
KR100898759B1 true KR100898759B1 (ko) 2009-05-25

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US (1) US9608128B2 (enExample)
EP (1) EP1320897B1 (enExample)
JP (2) JP2004510354A (enExample)
KR (1) KR100898759B1 (enExample)
DE (1) DE10048437A1 (enExample)
WO (1) WO2002027802A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10048437A1 (de) 2000-09-29 2002-04-18 Eupec Gmbh & Co Kg Verfahren zum Herstellen eines Körpers aus Halbleitermaterial mit reduzierter mittlerer freier Weglänge und mit dem Verfahren hergestellter Körper
DE10207339A1 (de) * 2002-02-21 2003-09-11 Infineon Technologies Ag Verfahren zur Reduzierung der Beweglichkeit freier Ladungsträger in einem Halbleiterkörper
DE102010046215B4 (de) * 2010-09-21 2019-01-03 Infineon Technologies Austria Ag Halbleiterkörper mit verspanntem Bereich, Elektronisches Bauelement und ein Verfahren zum Erzeugen des Halbleiterkörpers.
CN103700712B (zh) * 2012-09-27 2017-05-03 比亚迪股份有限公司 一种快恢复二极管的结构及其制造方法
CN104701162A (zh) * 2013-12-06 2015-06-10 江苏物联网研究发展中心 半导体器件、pin二极管和igbt的制作方法
DE102015111213B4 (de) 2015-07-10 2023-05-04 Infineon Technologies Ag Verfahren zum Verringern einer bipolaren Degradation bei einem SiC-Halbleiterbauelement und Halbleiterbauelement

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EP0327316A2 (en) * 1988-02-04 1989-08-09 Kabushiki Kaisha Toshiba Semiconductor device having composite substrate formed by fixing two semiconductor substrates in close contact with each other
US4935386A (en) * 1987-02-26 1990-06-19 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device including substrate bonding and outdiffusion by thermal heating
US5102810A (en) * 1990-03-13 1992-04-07 General Instrument Corp. Method for controlling the switching speed of bipolar power devices
JPH07107935A (ja) * 1993-08-18 1995-04-25 Kaneto Shoji Kk 豆腐連続自動製造装置
JPH1012628A (ja) * 1996-06-20 1998-01-16 Nec Corp 半導体基板およびその製造方法、並びに半導体素子
KR19990007489A (ko) * 1997-06-30 1999-01-25 스콧 티. 마이쿠엔 반도체 소자에 대한 개선된 수명 제어 방법
WO2000007245A1 (de) * 1998-07-29 2000-02-10 Infineon Technologies Ag Leistungshalbleiter mit reduziertem sperrstrom

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US4717681A (en) * 1986-05-19 1988-01-05 Texas Instruments Incorporated Method of making a heterojunction bipolar transistor with SIPOS
US5159429A (en) * 1990-01-23 1992-10-27 International Business Machines Corporation Semiconductor device structure employing a multi-level epitaxial structure and method of manufacturing same
DE4223914C2 (de) * 1992-06-30 1996-01-25 Fraunhofer Ges Forschung Verfahren zum Herstellen eines vertikalen Leistungsbauelementes mit reduzierter Minoritätsträgerlebensdauer in dessen Driftstrecke
EP0622834A3 (en) * 1993-04-30 1998-02-11 International Business Machines Corporation Method to prevent latch-up and improve breakdown voltage in SOI MOSFETS
JP3198766B2 (ja) 1993-12-27 2001-08-13 日産自動車株式会社 電導度変調型トランジスタ
JP2979964B2 (ja) 1994-07-25 1999-11-22 株式会社日立製作所 半導体装置及びそれを用いたインバータ装置
US6037632A (en) * 1995-11-06 2000-03-14 Kabushiki Kaisha Toshiba Semiconductor device
JP3394383B2 (ja) * 1996-03-18 2003-04-07 三菱電機株式会社 サイリスタの製造方法およびサイリスタ
WO1998015010A1 (de) * 1996-09-30 1998-04-09 Eupec Europäische Gesellschaft Für Leistungshalbleiter Mbh + Co. Kg Thyristor mit durchbruchbereich
TW396628B (en) * 1997-09-04 2000-07-01 Nat Science Council Structure and process for SiC single crystal/Si single crystal hetero-junction negative differential resistance
JPH1199469A (ja) 1997-09-30 1999-04-13 Nisshin Steel Co Ltd 金属管の内面研磨方法
DE10030381B4 (de) * 2000-06-21 2005-04-14 eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG Leistungshalbleiterbauelement aufweisend einen Körper aus Halbleitermaterial mit Übergang zwischen zueinander entgegengesetzten Leiterfähigkeitstypen
DE10048437A1 (de) 2000-09-29 2002-04-18 Eupec Gmbh & Co Kg Verfahren zum Herstellen eines Körpers aus Halbleitermaterial mit reduzierter mittlerer freier Weglänge und mit dem Verfahren hergestellter Körper

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4935386A (en) * 1987-02-26 1990-06-19 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device including substrate bonding and outdiffusion by thermal heating
EP0327316A2 (en) * 1988-02-04 1989-08-09 Kabushiki Kaisha Toshiba Semiconductor device having composite substrate formed by fixing two semiconductor substrates in close contact with each other
US5102810A (en) * 1990-03-13 1992-04-07 General Instrument Corp. Method for controlling the switching speed of bipolar power devices
JPH07107935A (ja) * 1993-08-18 1995-04-25 Kaneto Shoji Kk 豆腐連続自動製造装置
JPH1012628A (ja) * 1996-06-20 1998-01-16 Nec Corp 半導体基板およびその製造方法、並びに半導体素子
KR19990007489A (ko) * 1997-06-30 1999-01-25 스콧 티. 마이쿠엔 반도체 소자에 대한 개선된 수명 제어 방법
WO2000007245A1 (de) * 1998-07-29 2000-02-10 Infineon Technologies Ag Leistungshalbleiter mit reduziertem sperrstrom

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
1994년 KAIST 하용민 박사학위 논문 (제목 : 고성능 다결정 실리콘 박막 트랜지스터를 위한 소자의 구조 및 제작 공정)*
Ikunori Takata "A simple mobility model for electrons and holes" IEEE ISPSD 1999, 26-28 May 1999, pp. 269-272.*

Also Published As

Publication number Publication date
EP1320897B1 (de) 2012-12-05
US20030154912A1 (en) 2003-08-21
WO2002027802A1 (de) 2002-04-04
US9608128B2 (en) 2017-03-28
JP2011061226A (ja) 2011-03-24
DE10048437A1 (de) 2002-04-18
JP2004510354A (ja) 2004-04-02
EP1320897A1 (de) 2003-06-25
JP5566260B2 (ja) 2014-08-06
KR20030070887A (ko) 2003-09-02

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