JP2004503948A - 漏れ電流を減少させる装置および回路ならびにその方法 - Google Patents

漏れ電流を減少させる装置および回路ならびにその方法 Download PDF

Info

Publication number
JP2004503948A
JP2004503948A JP2002511471A JP2002511471A JP2004503948A JP 2004503948 A JP2004503948 A JP 2004503948A JP 2002511471 A JP2002511471 A JP 2002511471A JP 2002511471 A JP2002511471 A JP 2002511471A JP 2004503948 A JP2004503948 A JP 2004503948A
Authority
JP
Japan
Prior art keywords
voltage
transistor
circuit
region
channel region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002511471A
Other languages
English (en)
Japanese (ja)
Inventor
ヴェラード・キンバレー
クラーク・ローレンス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of JP2004503948A publication Critical patent/JP2004503948A/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/0016—Arrangements for reducing power consumption by using a control or a clock signal, e.g. in order to apply power supply
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2002511471A 2000-06-12 2001-06-01 漏れ電流を減少させる装置および回路ならびにその方法 Pending JP2004503948A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US59186500A 2000-06-12 2000-06-12
PCT/US2001/017839 WO2001097380A1 (en) 2000-06-12 2001-06-01 Apparatus and circuit having reduced leakage current and method therefor

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009137804A Division JP2009207178A (ja) 2000-06-12 2009-06-09 漏れ電流を減少させる装置および回路ならびにその方法

Publications (1)

Publication Number Publication Date
JP2004503948A true JP2004503948A (ja) 2004-02-05

Family

ID=24368271

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2002511471A Pending JP2004503948A (ja) 2000-06-12 2001-06-01 漏れ電流を減少させる装置および回路ならびにその方法
JP2009137804A Pending JP2009207178A (ja) 2000-06-12 2009-06-09 漏れ電流を減少させる装置および回路ならびにその方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2009137804A Pending JP2009207178A (ja) 2000-06-12 2009-06-09 漏れ電流を減少させる装置および回路ならびにその方法

Country Status (6)

Country Link
JP (2) JP2004503948A (ko)
KR (1) KR100551143B1 (ko)
CN (1) CN1236560C (ko)
AU (1) AU2001265321A1 (ko)
TW (1) TW501278B (ko)
WO (1) WO2001097380A1 (ko)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003031681A (ja) * 2001-07-16 2003-01-31 Matsushita Electric Ind Co Ltd 半導体集積回路
JP2005515636A (ja) * 2002-01-15 2005-05-26 ハネウェル・インターナショナル・インコーポレーテッド ｎチャンネル・トランジスタおよびｐチャンネル・トランジスタ用の、正のボディ・バイアスでの適応閾値電圧制御
US11309333B2 (en) 2019-12-24 2022-04-19 Kioxia Corporation Semiconductor integrated circuit

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108986748B (zh) 2018-08-02 2021-08-27 京东方科技集团股份有限公司 一种消除驱动晶体管漏电流的方法及系统、显示装置

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05108194A (ja) * 1991-10-17 1993-04-30 Hitachi Ltd 低消費電力型半導体集積回路
JPH07176624A (ja) * 1993-12-20 1995-07-14 Nippon Telegr & Teleph Corp <Ntt> 相補性ｍｏｓ型電界効果トランジスタ集積回路
JPH1079662A (ja) * 1996-06-29 1998-03-24 Hyundai Electron Ind Co Ltd 半導体装置のしきい電圧の制御回路
JPH10229165A (ja) * 1997-02-17 1998-08-25 Ricoh Co Ltd 半導体集積回路装置
JPH10229332A (ja) * 1996-12-03 1998-08-25 Sgs Thomson Microelectron Inc トランジスタのスレッシュホールド電圧を積極的にバイアスする集積回路及び関連方法
JPH10242839A (ja) * 1997-02-28 1998-09-11 Hitachi Ltd 半導体装置
JPH10261946A (ja) * 1997-03-19 1998-09-29 Mitsubishi Electric Corp 半導体集積回路
JPH10303370A (ja) * 1997-04-24 1998-11-13 Fujitsu Ltd 半導体集積回路装置
JPH11102229A (ja) * 1997-06-02 1999-04-13 St Microelectron Inc 低電圧及び低スタンバイ電流用トランジスタの選択的バイアスを有する集積回路及び関連方法
JPH11122047A (ja) * 1997-10-14 1999-04-30 Mitsubishi Electric Corp 半導体集積回路装置
JP2000155617A (ja) * 1998-11-19 2000-06-06 Mitsubishi Electric Corp 内部電圧発生回路

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0169157B1 (ko) * 1993-11-29 1999-02-01 기다오까 다까시 반도체 회로 및 mos-dram
JP4046383B2 (ja) * 1997-04-01 2008-02-13 株式会社ルネサステクノロジ 半導体集積回路装置
EP1012971A4 (en) * 1997-06-20 2000-09-20 Intel Corp DIRECT POLARIZED BODY TRANSISTOR CIRCUITS

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05108194A (ja) * 1991-10-17 1993-04-30 Hitachi Ltd 低消費電力型半導体集積回路
JPH07176624A (ja) * 1993-12-20 1995-07-14 Nippon Telegr & Teleph Corp <Ntt> 相補性ｍｏｓ型電界効果トランジスタ集積回路
JPH1079662A (ja) * 1996-06-29 1998-03-24 Hyundai Electron Ind Co Ltd 半導体装置のしきい電圧の制御回路
JPH10229332A (ja) * 1996-12-03 1998-08-25 Sgs Thomson Microelectron Inc トランジスタのスレッシュホールド電圧を積極的にバイアスする集積回路及び関連方法
JPH10229165A (ja) * 1997-02-17 1998-08-25 Ricoh Co Ltd 半導体集積回路装置
JPH10242839A (ja) * 1997-02-28 1998-09-11 Hitachi Ltd 半導体装置
JPH10261946A (ja) * 1997-03-19 1998-09-29 Mitsubishi Electric Corp 半導体集積回路
JPH10303370A (ja) * 1997-04-24 1998-11-13 Fujitsu Ltd 半導体集積回路装置
JPH11102229A (ja) * 1997-06-02 1999-04-13 St Microelectron Inc 低電圧及び低スタンバイ電流用トランジスタの選択的バイアスを有する集積回路及び関連方法
JPH11122047A (ja) * 1997-10-14 1999-04-30 Mitsubishi Electric Corp 半導体集積回路装置
JP2000155617A (ja) * 1998-11-19 2000-06-06 Mitsubishi Electric Corp 内部電圧発生回路

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003031681A (ja) * 2001-07-16 2003-01-31 Matsushita Electric Ind Co Ltd 半導体集積回路
JP2005515636A (ja) * 2002-01-15 2005-05-26 ハネウェル・インターナショナル・インコーポレーテッド ｎチャンネル・トランジスタおよびｐチャンネル・トランジスタ用の、正のボディ・バイアスでの適応閾値電圧制御
US11309333B2 (en) 2019-12-24 2022-04-19 Kioxia Corporation Semiconductor integrated circuit

Also Published As

Publication number Publication date
CN1446403A (zh) 2003-10-01
KR100551143B1 (ko) 2006-02-10
KR20030022816A (ko) 2003-03-17
WO2001097380A1 (en) 2001-12-20
CN1236560C (zh) 2006-01-11
JP2009207178A (ja) 2009-09-10
AU2001265321A1 (en) 2001-12-24
TW501278B (en) 2002-09-01

Similar Documents

Publication Publication Date Title
JP4353393B2 (ja) 半導体集積回路装置
EP0946990B1 (en) Mos device having a gate to body connection formed on a soi substrate
US6239649B1 (en) Switched body SOI (silicon on insulator) circuits and fabrication method therefor
JP2939086B2 (ja) 半導体装置
US7257043B2 (en) Isolation device over field in a memory device
EP0951072A1 (en) Semiconductor integrated circuit device
KR19980033134A (ko) 반도체 집적회로
KR960012249B1 (ko) 래치업 방지회로를 가진 cmos 집적회로장치
JP2001352077A (ja) Ｓｏｉ電界効果トランジスタ
US20070278554A1 (en) Semiconductor memory device and method of forming the same
KR100243496B1 (ko) 반도체 장치
JP2710113B2 (ja) 相補性回路技術による集積回路
JP2006270027A (ja) 半導体装置および相補形ｍｉｓ論理回路
US6674127B2 (en) Semiconductor integrated circuit
JP2009207178A (ja) 漏れ電流を減少させる装置および回路ならびにその方法
JPS6050066B2 (ja) Ｍｏｓ半導体集積回路装置
CN210780725U (zh) 电路
JP4137510B2 (ja) 差動増幅回路を有する半導体装置
JP2000294656A (ja) 集積回路
JP2005192234A (ja) 半導体集積回路装置と半導体装置の製造方法
JP2000277627A (ja) 半導体装置
JP5914725B2 (ja) 半導体集積回路装置
JPH1168548A (ja) 半導体集積回路
JP2004179269A (ja) 半導体集積回路およびその制御方法
JP2743672B2 (ja) 半導体記憶装置

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050705

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090209

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20090511

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20090526

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090609

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090713

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20091013

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20091020

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20091113

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20100118