JP2004363592A5 - - Google Patents

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Publication number
JP2004363592A5
JP2004363592A5 JP2004158994A JP2004158994A JP2004363592A5 JP 2004363592 A5 JP2004363592 A5 JP 2004363592A5 JP 2004158994 A JP2004158994 A JP 2004158994A JP 2004158994 A JP2004158994 A JP 2004158994A JP 2004363592 A5 JP2004363592 A5 JP 2004363592A5
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Japan
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layer
manufacturing
ion implantation
lattice
dose
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JP2004158994A
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JP2004363592A (ja
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Priority claimed from US10/448,947 external-priority patent/US6855436B2/en
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JP2004158994A 2003-05-30 2004-05-28 十分に格子緩和された高品質ＳｉＧｅオン・インシュレータ基板材料を製造する方法、基板材料、およびヘテロ構造 Pending JP2004363592A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/448,947 US6855436B2 (en) 2003-05-30 2003-05-30 Formation of silicon-germanium-on-insulator (SGOI) by an integral high temperature SIMOX-Ge interdiffusion anneal

Publications (2)

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JP2004363592A JP2004363592A (ja) 2004-12-24
JP2004363592A5 true JP2004363592A5 (enExample) 2007-04-05

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JP2004158994A Pending JP2004363592A (ja) 2003-05-30 2004-05-28 十分に格子緩和された高品質ＳｉＧｅオン・インシュレータ基板材料を製造する方法、基板材料、およびヘテロ構造

Country Status (5)

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US (5) US6855436B2 (enExample)
JP (1) JP2004363592A (enExample)
KR (2) KR100763317B1 (enExample)
CN (1) CN1332425C (enExample)
TW (1) TWI345828B (enExample)

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