JP2004214379A - 半導体装置、ダイナミック型半導体記憶装置及び半導体装置の製造方法 - Google Patents

半導体装置、ダイナミック型半導体記憶装置及び半導体装置の製造方法 Download PDF

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Publication number
JP2004214379A
JP2004214379A JP2002381382A JP2002381382A JP2004214379A JP 2004214379 A JP2004214379 A JP 2004214379A JP 2002381382 A JP2002381382 A JP 2002381382A JP 2002381382 A JP2002381382 A JP 2002381382A JP 2004214379 A JP2004214379 A JP 2004214379A
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JP
Japan
Prior art keywords
insulating film
pair
region
semiconductor
electrode
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Pending
Application number
JP2002381382A
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English (en)
Japanese (ja)
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JP2004214379A5 (enExample
Inventor
Ryuta Katsumata
竜太 勝又
Hideaki Aochi
英明 青地
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Toshiba Corp
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Toshiba Corp
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Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2002381382A priority Critical patent/JP2004214379A/ja
Priority to TW092135503A priority patent/TWI227055B/zh
Priority to US10/744,818 priority patent/US6977404B2/en
Priority to CNB2003101244908A priority patent/CN1331233C/zh
Publication of JP2004214379A publication Critical patent/JP2004214379A/ja
Publication of JP2004214379A5 publication Critical patent/JP2004214379A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H10B12/053—Making the transistor the transistor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H10B12/056—Making the transistor the transistor being a FinFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/39—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/50—Peripheral circuit region structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/045—Manufacture or treatment of capacitors having potential barriers, e.g. varactors
    • H10D1/047—Manufacture or treatment of capacitors having potential barriers, e.g. varactors of conductor-insulator-semiconductor capacitors, e.g. trench capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H10D1/665—Trench conductor-insulator-semiconductor capacitors, e.g. trench MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H10B12/0387—Making the trench
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/34—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/36—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being a FinFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
JP2002381382A 2002-12-27 2002-12-27 半導体装置、ダイナミック型半導体記憶装置及び半導体装置の製造方法 Pending JP2004214379A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2002381382A JP2004214379A (ja) 2002-12-27 2002-12-27 半導体装置、ダイナミック型半導体記憶装置及び半導体装置の製造方法
TW092135503A TWI227055B (en) 2002-12-27 2003-12-16 Semiconductor device, dynamic semiconductor memory, and manufacturing method of semiconductor device
US10/744,818 US6977404B2 (en) 2002-12-27 2003-12-23 Trench DRAM with double-gated transistor and method of manufacturing the same
CNB2003101244908A CN1331233C (zh) 2002-12-27 2003-12-29 半导体器件、动态型半导体存储器件及半导体器件的制法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002381382A JP2004214379A (ja) 2002-12-27 2002-12-27 半導体装置、ダイナミック型半導体記憶装置及び半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2004214379A true JP2004214379A (ja) 2004-07-29
JP2004214379A5 JP2004214379A5 (enExample) 2005-09-02

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JP2002381382A Pending JP2004214379A (ja) 2002-12-27 2002-12-27 半導体装置、ダイナミック型半導体記憶装置及び半導体装置の製造方法

Country Status (4)

Country Link
US (1) US6977404B2 (enExample)
JP (1) JP2004214379A (enExample)
CN (1) CN1331233C (enExample)
TW (1) TWI227055B (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7276750B2 (en) 2003-11-11 2007-10-02 Kabushiki Kaisha Toshiba Semiconductor device having trench capacitor and fabrication method for the same
KR100882226B1 (ko) * 2006-09-29 2009-02-06 미쓰비시덴키 가부시키가이샤 전력용 반도체장치
JP2009528701A (ja) * 2006-03-02 2009-08-06 マイクロン テクノロジー， インク． Ｕ型トランジスタおよび関連する製造方法
JP2009544150A (ja) * 2006-07-14 2009-12-10 マイクロン テクノロジー， インク． 解像度以下のケイ素フィーチャおよびそれを形成するための方法

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JP2005005465A (ja) * 2003-06-11 2005-01-06 Toshiba Corp 半導体記憶装置及びその製造方法
DE10361695B3 (de) * 2003-12-30 2005-02-03 Infineon Technologies Ag Transistorstruktur mit gekrümmtem Kanal, Speicherzelle und Speicherzellenfeld für DRAMs sowie Verfahren zur Herstellung eines DRAMs
KR100532509B1 (ko) * 2004-03-26 2005-11-30 삼성전자주식회사 ＳｉＧｅ를 이용한 트렌치 커패시터 및 그 형성방법
DE102004031385B4 (de) * 2004-06-29 2010-12-09 Qimonda Ag Verfahren zur Herstellung von Stegfeldeffekttransistoren in einer DRAM-Speicherzellenanordnung, Feldeffekttransistoren mit gekrümmtem Kanal und DRAM-Speicherzellenanordnung
US6970372B1 (en) * 2004-06-29 2005-11-29 International Business Machines Corporation Dual gated finfet gain cell
JP2006261193A (ja) * 2005-03-15 2006-09-28 Toshiba Corp 半導体記憶装置およびその製造方法
CN100459074C (zh) * 2006-02-22 2009-02-04 南亚科技股份有限公司 具有沟槽式栅极的半导体装置及其制造方法
CN100466231C (zh) * 2006-04-24 2009-03-04 联华电子股份有限公司 沟槽电容动态随机存取存储器元件及其制作方法
US8852851B2 (en) 2006-07-10 2014-10-07 Micron Technology, Inc. Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same
US7456471B2 (en) * 2006-09-15 2008-11-25 International Business Machines Corporation Field effect transistor with raised source/drain fin straps
US7989307B2 (en) * 2008-05-05 2011-08-02 Micron Technology, Inc. Methods of forming isolated active areas, trenches, and conductive lines in semiconductor structures and semiconductor structures including the same
US10151981B2 (en) 2008-05-22 2018-12-11 Micron Technology, Inc. Methods of forming structures supported by semiconductor substrates
US7781283B2 (en) * 2008-08-15 2010-08-24 International Business Machines Corporation Split-gate DRAM with MuGFET, design structure, and method of manufacture
US7979836B2 (en) * 2008-08-15 2011-07-12 International Business Machines Corporation Split-gate DRAM with MuGFET, design structure, and method of manufacture
US8796155B2 (en) 2008-12-04 2014-08-05 Micron Technology, Inc. Methods of fabricating substrates
US8184472B2 (en) * 2009-03-13 2012-05-22 International Business Machines Corporation Split-gate DRAM with lateral control-gate MuGFET
US9330934B2 (en) 2009-05-18 2016-05-03 Micron Technology, Inc. Methods of forming patterns on substrates
US8467220B2 (en) * 2010-01-14 2013-06-18 Jai Hoon Sim DRAM device and manufacturing method thereof
JP5507287B2 (ja) * 2010-02-22 2014-05-28 ピーエスフォー ルクスコ エスエイアールエル 半導体装置及びその製造方法
US8421139B2 (en) * 2010-04-07 2013-04-16 International Business Machines Corporation Structure and method to integrate embedded DRAM with finfet
TWI433241B (zh) * 2010-06-24 2014-04-01 Inotera Memories Inc 具有浮置體之鰭式場效電晶體的製造方法
US8294511B2 (en) 2010-11-19 2012-10-23 Micron Technology, Inc. Vertically stacked fin transistors and methods of fabricating and operating the same
US9553193B2 (en) 2010-11-19 2017-01-24 Micron Technology, Inc. Double gated fin transistors and methods of fabricating and operating the same
TWI416665B (zh) * 2011-02-01 2013-11-21 Inotera Memories Inc 記憶體裝置之垂直式電晶體及其製造方法
US8575032B2 (en) 2011-05-05 2013-11-05 Micron Technology, Inc. Methods of forming a pattern on a substrate
US9368502B2 (en) * 2011-10-17 2016-06-14 GlogalFoundries, Inc. Replacement gate multigate transistor for embedded DRAM
US9177794B2 (en) 2012-01-13 2015-11-03 Micron Technology, Inc. Methods of patterning substrates
US8610249B2 (en) 2012-03-30 2013-12-17 International Business Machines Corporation Non-planar capacitor and method of forming the non-planar capacitor
US8697511B2 (en) * 2012-05-18 2014-04-15 Unisantis Electronics Singapore Pte. Ltd. Method for producing semiconductor device and semiconductor device
US8877578B2 (en) * 2012-05-18 2014-11-04 Unisantis Electronics Singapore Pte. Ltd. Method for producing semiconductor device and semiconductor device
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US8673729B1 (en) * 2012-12-05 2014-03-18 International Business Machines Corporation finFET eDRAM strap connection structure
US9159576B2 (en) * 2013-03-05 2015-10-13 Qualcomm Incorporated Method of forming finFET having fins of different height
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US6140175A (en) * 1999-03-03 2000-10-31 International Business Machines Corporation Self-aligned deep trench DRAM array device
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JP2002118255A (ja) 2000-07-31 2002-04-19 Toshiba Corp 半導体装置およびその製造方法
US6552382B1 (en) * 2002-09-30 2003-04-22 Intelligent Sources Development Corp. Scalable vertical DRAM cell structure and its manufacturing methods
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7276750B2 (en) 2003-11-11 2007-10-02 Kabushiki Kaisha Toshiba Semiconductor device having trench capacitor and fabrication method for the same
JP2009528701A (ja) * 2006-03-02 2009-08-06 マイクロン テクノロジー， インク． Ｕ型トランジスタおよび関連する製造方法
JP2009544150A (ja) * 2006-07-14 2009-12-10 マイクロン テクノロジー， インク． 解像度以下のケイ素フィーチャおよびそれを形成するための方法
US8981444B2 (en) 2006-07-14 2015-03-17 Round Rock Research, Llc Subresolution silicon features and methods for forming the same
KR100882226B1 (ko) * 2006-09-29 2009-02-06 미쓰비시덴키 가부시키가이샤 전력용 반도체장치

Also Published As

Publication number Publication date
TWI227055B (en) 2005-01-21
TW200419780A (en) 2004-10-01
CN1512589A (zh) 2004-07-14
US20040150037A1 (en) 2004-08-05
US6977404B2 (en) 2005-12-20
CN1331233C (zh) 2007-08-08

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