TWI227055B - Semiconductor device, dynamic semiconductor memory, and manufacturing method of semiconductor device - Google Patents

Semiconductor device, dynamic semiconductor memory, and manufacturing method of semiconductor device Download PDF

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Publication number
TWI227055B
TWI227055B TW092135503A TW92135503A TWI227055B TW I227055 B TWI227055 B TW I227055B TW 092135503 A TW092135503 A TW 092135503A TW 92135503 A TW92135503 A TW 92135503A TW I227055 B TWI227055 B TW I227055B
Authority
TW
Taiwan
Prior art keywords
insulating film
electrode
semiconductor
film
pair
Prior art date
Application number
TW092135503A
Other languages
English (en)
Chinese (zh)
Other versions
TW200419780A (en
Inventor
Ryuta Katsumata
Hideaki Aochi
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of TW200419780A publication Critical patent/TW200419780A/zh
Application granted granted Critical
Publication of TWI227055B publication Critical patent/TWI227055B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H10B12/053—Making the transistor the transistor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H10B12/056—Making the transistor the transistor being a FinFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/39—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/50—Peripheral circuit region structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/045—Manufacture or treatment of capacitors having potential barriers, e.g. varactors
    • H10D1/047—Manufacture or treatment of capacitors having potential barriers, e.g. varactors of conductor-insulator-semiconductor capacitors, e.g. trench capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H10D1/665—Trench conductor-insulator-semiconductor capacitors, e.g. trench MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H10B12/0387—Making the trench
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/34—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/36—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being a FinFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
TW092135503A 2002-12-27 2003-12-16 Semiconductor device, dynamic semiconductor memory, and manufacturing method of semiconductor device TWI227055B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002381382A JP2004214379A (ja) 2002-12-27 2002-12-27 半導体装置、ダイナミック型半導体記憶装置及び半導体装置の製造方法

Publications (2)

Publication Number Publication Date
TW200419780A TW200419780A (en) 2004-10-01
TWI227055B true TWI227055B (en) 2005-01-21

Family

ID=32766681

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092135503A TWI227055B (en) 2002-12-27 2003-12-16 Semiconductor device, dynamic semiconductor memory, and manufacturing method of semiconductor device

Country Status (4)

Country Link
US (1) US6977404B2 (enExample)
JP (1) JP2004214379A (enExample)
CN (1) CN1331233C (enExample)
TW (1) TWI227055B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI416665B (zh) * 2011-02-01 2013-11-21 Inotera Memories Inc 記憶體裝置之垂直式電晶體及其製造方法

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JP2005005465A (ja) * 2003-06-11 2005-01-06 Toshiba Corp 半導体記憶装置及びその製造方法
JP2005150159A (ja) 2003-11-11 2005-06-09 Toshiba Corp 半導体装置、及び、半導体装置の製造方法
DE10361695B3 (de) * 2003-12-30 2005-02-03 Infineon Technologies Ag Transistorstruktur mit gekrümmtem Kanal, Speicherzelle und Speicherzellenfeld für DRAMs sowie Verfahren zur Herstellung eines DRAMs
KR100532509B1 (ko) * 2004-03-26 2005-11-30 삼성전자주식회사 ＳｉＧｅ를 이용한 트렌치 커패시터 및 그 형성방법
DE102004031385B4 (de) * 2004-06-29 2010-12-09 Qimonda Ag Verfahren zur Herstellung von Stegfeldeffekttransistoren in einer DRAM-Speicherzellenanordnung, Feldeffekttransistoren mit gekrümmtem Kanal und DRAM-Speicherzellenanordnung
US6970372B1 (en) * 2004-06-29 2005-11-29 International Business Machines Corporation Dual gated finfet gain cell
JP2006261193A (ja) * 2005-03-15 2006-09-28 Toshiba Corp 半導体記憶装置およびその製造方法
CN100459074C (zh) * 2006-02-22 2009-02-04 南亚科技股份有限公司 具有沟槽式栅极的半导体装置及其制造方法
US7476933B2 (en) * 2006-03-02 2009-01-13 Micron Technology, Inc. Vertical gated access transistor
CN100466231C (zh) * 2006-04-24 2009-03-04 联华电子股份有限公司 沟槽电容动态随机存取存储器元件及其制作方法
US8852851B2 (en) 2006-07-10 2014-10-07 Micron Technology, Inc. Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same
US7678648B2 (en) * 2006-07-14 2010-03-16 Micron Technology, Inc. Subresolution silicon features and methods for forming the same
US7456471B2 (en) * 2006-09-15 2008-11-25 International Business Machines Corporation Field effect transistor with raised source/drain fin straps
JP5128100B2 (ja) * 2006-09-29 2013-01-23 三菱電機株式会社 電力用半導体装置
US7989307B2 (en) * 2008-05-05 2011-08-02 Micron Technology, Inc. Methods of forming isolated active areas, trenches, and conductive lines in semiconductor structures and semiconductor structures including the same
US10151981B2 (en) 2008-05-22 2018-12-11 Micron Technology, Inc. Methods of forming structures supported by semiconductor substrates
US7781283B2 (en) * 2008-08-15 2010-08-24 International Business Machines Corporation Split-gate DRAM with MuGFET, design structure, and method of manufacture
US7979836B2 (en) * 2008-08-15 2011-07-12 International Business Machines Corporation Split-gate DRAM with MuGFET, design structure, and method of manufacture
US8796155B2 (en) 2008-12-04 2014-08-05 Micron Technology, Inc. Methods of fabricating substrates
US8184472B2 (en) * 2009-03-13 2012-05-22 International Business Machines Corporation Split-gate DRAM with lateral control-gate MuGFET
US9330934B2 (en) 2009-05-18 2016-05-03 Micron Technology, Inc. Methods of forming patterns on substrates
US8467220B2 (en) * 2010-01-14 2013-06-18 Jai Hoon Sim DRAM device and manufacturing method thereof
JP5507287B2 (ja) * 2010-02-22 2014-05-28 ピーエスフォー ルクスコ エスエイアールエル 半導体装置及びその製造方法
US8421139B2 (en) * 2010-04-07 2013-04-16 International Business Machines Corporation Structure and method to integrate embedded DRAM with finfet
TWI433241B (zh) * 2010-06-24 2014-04-01 Inotera Memories Inc 具有浮置體之鰭式場效電晶體的製造方法
US8294511B2 (en) 2010-11-19 2012-10-23 Micron Technology, Inc. Vertically stacked fin transistors and methods of fabricating and operating the same
US9553193B2 (en) 2010-11-19 2017-01-24 Micron Technology, Inc. Double gated fin transistors and methods of fabricating and operating the same
US8575032B2 (en) 2011-05-05 2013-11-05 Micron Technology, Inc. Methods of forming a pattern on a substrate
US9368502B2 (en) * 2011-10-17 2016-06-14 GlogalFoundries, Inc. Replacement gate multigate transistor for embedded DRAM
US9177794B2 (en) 2012-01-13 2015-11-03 Micron Technology, Inc. Methods of patterning substrates
US8610249B2 (en) 2012-03-30 2013-12-17 International Business Machines Corporation Non-planar capacitor and method of forming the non-planar capacitor
US8697511B2 (en) * 2012-05-18 2014-04-15 Unisantis Electronics Singapore Pte. Ltd. Method for producing semiconductor device and semiconductor device
US8877578B2 (en) * 2012-05-18 2014-11-04 Unisantis Electronics Singapore Pte. Ltd. Method for producing semiconductor device and semiconductor device
US9082838B2 (en) * 2012-09-28 2015-07-14 Unisantis Electronics Singapore Pte. Ltd. Method for producing a semiconductor device and semiconductor device
KR20140063147A (ko) 2012-11-16 2014-05-27 에스케이하이닉스 주식회사 반도체 장치 및 그 제조 방법
US8673729B1 (en) * 2012-12-05 2014-03-18 International Business Machines Corporation finFET eDRAM strap connection structure
US9159576B2 (en) * 2013-03-05 2015-10-13 Qualcomm Incorporated Method of forming finFET having fins of different height
US9570449B2 (en) * 2015-01-07 2017-02-14 International Business Machines Corporation Metal strap for DRAM/FinFET combination
US9630836B2 (en) * 2015-09-30 2017-04-25 Mems Drive, Inc. Simplified MEMS device fabrication process
US10388658B1 (en) * 2018-04-27 2019-08-20 Micron Technology, Inc. Transistors, arrays of transistors, arrays of memory cells individually comprising a capacitor and an elevationally-extending transistor, and methods of forming an array of transistors
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI416665B (zh) * 2011-02-01 2013-11-21 Inotera Memories Inc 記憶體裝置之垂直式電晶體及其製造方法

Also Published As

Publication number Publication date
JP2004214379A (ja) 2004-07-29
TW200419780A (en) 2004-10-01
CN1512589A (zh) 2004-07-14
US20040150037A1 (en) 2004-08-05
US6977404B2 (en) 2005-12-20
CN1331233C (zh) 2007-08-08

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