JP3927179B2 - 半導体記憶装置およびその製造方法 - Google Patents
半導体記憶装置およびその製造方法 Download PDFInfo
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- JP3927179B2 JP3927179B2 JP2004001073A JP2004001073A JP3927179B2 JP 3927179 B2 JP3927179 B2 JP 3927179B2 JP 2004001073 A JP2004001073 A JP 2004001073A JP 2004001073 A JP2004001073 A JP 2004001073A JP 3927179 B2 JP3927179 B2 JP 3927179B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66181—Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
- H01L29/945—Trench capacitors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
- H10B12/0387—Making the trench
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/05—Making the transistor
- H10B12/053—Making the transistor the transistor being at least partially in a trench in the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/05—Making the transistor
- H10B12/056—Making the transistor the transistor being a FinFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/34—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being at least partially in a trench in the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/36—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being a FinFET
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/39—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench
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- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
Description
IEEE 2002年 (H.Seidlら著 A Fully Integrated Al2O3 Trench Capacitor DRAM For Sub-100nm Technology)
まず、図1を用いて、この発明の第1の実施形態に係る半導体記憶装置の概略構造を説明する。図1は、この発明の第1の実施形態に係る半導体記憶装置を模式的に示す断面構造図である。
次に、この発明の第2の実施形態に係る半導体記憶装置およびその製造方法について説明する。この実施形態においては、セルトランジスタとしていわゆるフィンゲート型の電界効果トランジスタ(フィンゲート型のダブルゲートトランジスタ)を用いている。さらに、各メモリセルMC中のダブルゲートトランジスタとトレンチキャパシタTCがそれぞれ1対ずつ隣接して配置され、これら一対のダブルゲートトランジスタと1対のトレンチキャパシタTCとが交互に千鳥状に配置されたメモリセルアレイを備えたDRAMの例である。以下の説明において、上記第1の実施形態と重複する部分の説明は省略する。
)法によりディープトレンチ底部の半導体基板11をエッチングし、トレンチ底部をボトル形状にする。このように、トレンチ底部をボトル形状にすることによって、トレンチの表面積を増大させ、キャパシタ容量を増大させることができる。ここで、アスペクト比が大きいことから、トレンチ底部のすべての図示は省略する。
次に、図31乃至図35を用いて、この発明の第3の実施形態に係る半導体記憶装置およびその製造方法について説明する。以下の説明において、上記第2の実施形態と同様の部分説明を省略する。
Claims (5)
- 半導体基板の主表面に形成されたトレンチ内に設けられるストレージノード電極と、前記ストレージノード電極と対向して配置されるプレート電極と、前記ストレージノード電極とプレート電極と間に設けられ、高誘電体材により形成されるキャパシタ絶縁膜とを有するトレンチキャパシタと、
前記半導体基板の主表面中に形成される絶縁ゲート型電界効果トランジスタと、
前記絶縁ゲート型電界効果トランジスタのソースまたはドレインと前記ストレージノード電極とを電気的に接続するコンタクト部と、
前記コンタクト部と前記トレンチ内の前記ストレージノード電極上およびキャパシタ絶縁膜上との間に形成され、前記キャパシタ絶縁膜の高誘電体材が前記コンタクト部に拡散されるのを阻止するバリアとして働き、膜厚が中心近傍よりも周辺の方が厚く形成されたキャップ構造とを具備すること
を特徴とする半導体記憶装置。 - 少なくとも前記ストレージノード電極における前記キャップ構造との接合部は金属であり、
前記キャップ構造は、さらに前記ストレージノード電極の金属材が前記コンタクト部に拡散されるのを阻止するバリアとしても働くこと
を特徴とする請求項1に記載の半導体記憶装置。 - 前記キャパシタ絶縁膜は、高誘電体の元素のうちの少なくとも一つを含む積層膜であること
を特徴とする請求項1または2に記載の半導体記憶装置。 - 前記キャパシタ絶縁膜は、高誘電体の元素のうちの少なくとも一つの酸化物を含むか、または高誘電体の元素のうちの少なくとも一つの酸化物を含む積層膜であること
を特徴とする請求項1または2に記載の半導体記憶装置。 - 前記キャップ構造の断面形状は、前記トレンチキャパシタ側または前記絶縁ゲート型電界効果トランジスタ側に凹型であること
を特徴とする請求項1乃至4のいずれか1項に記載の半導体記憶装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2004001073A JP3927179B2 (ja) | 2004-01-06 | 2004-01-06 | 半導体記憶装置およびその製造方法 |
US10/817,954 US7019349B2 (en) | 2004-01-06 | 2004-04-06 | Semiconductor memory device with cap structure and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2004001073A JP3927179B2 (ja) | 2004-01-06 | 2004-01-06 | 半導体記憶装置およびその製造方法 |
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JP2005197404A JP2005197404A (ja) | 2005-07-21 |
JP3927179B2 true JP3927179B2 (ja) | 2007-06-06 |
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Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7518182B2 (en) | 2004-07-20 | 2009-04-14 | Micron Technology, Inc. | DRAM layout with vertical FETs and method of formation |
US7285812B2 (en) * | 2004-09-02 | 2007-10-23 | Micron Technology, Inc. | Vertical transistors |
US7199419B2 (en) * | 2004-12-13 | 2007-04-03 | Micron Technology, Inc. | Memory structure for reduced floating body effect |
US7229895B2 (en) * | 2005-01-14 | 2007-06-12 | Micron Technology, Inc | Memory array buried digit line |
US7120046B1 (en) | 2005-05-13 | 2006-10-10 | Micron Technology, Inc. | Memory array with surrounding gate access transistors and capacitors with global and staggered local bit lines |
US7371627B1 (en) | 2005-05-13 | 2008-05-13 | Micron Technology, Inc. | Memory array with ultra-thin etched pillar surround gate access transistors and buried data/bit lines |
US7888721B2 (en) | 2005-07-06 | 2011-02-15 | Micron Technology, Inc. | Surround gate access transistors with grown ultra-thin bodies |
US7768051B2 (en) * | 2005-07-25 | 2010-08-03 | Micron Technology, Inc. | DRAM including a vertical surround gate transistor |
US7776715B2 (en) * | 2005-07-26 | 2010-08-17 | Micron Technology, Inc. | Reverse construction memory cell |
US7696567B2 (en) | 2005-08-31 | 2010-04-13 | Micron Technology, Inc | Semiconductor memory device |
TWI277177B (en) * | 2005-10-13 | 2007-03-21 | Promos Technologies Inc | Dynamic random access memory and manufacturing method thereof |
US20070232011A1 (en) * | 2006-03-31 | 2007-10-04 | Freescale Semiconductor, Inc. | Method of forming an active semiconductor device over a passive device and semiconductor component thereof |
US7923373B2 (en) | 2007-06-04 | 2011-04-12 | Micron Technology, Inc. | Pitch multiplication using self-assembling materials |
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WO2010080786A1 (en) * | 2009-01-09 | 2010-07-15 | Clemson University Research Foundation | Capacitive-stemmed capacitor |
US9401363B2 (en) | 2011-08-23 | 2016-07-26 | Micron Technology, Inc. | Vertical transistor devices, memory arrays, and methods of forming vertical transistor devices |
US9385131B2 (en) | 2012-05-31 | 2016-07-05 | Globalfoundries Inc. | Wrap-around fin for contacting a capacitor strap of a DRAM |
US9564443B2 (en) | 2014-01-20 | 2017-02-07 | International Business Machines Corporation | Dynamic random access memory cell with self-aligned strap |
US9224740B1 (en) * | 2014-12-11 | 2015-12-29 | Globalfoundries Inc. | High-K dielectric structure for deep trench isolation |
US9570449B2 (en) * | 2015-01-07 | 2017-02-14 | International Business Machines Corporation | Metal strap for DRAM/FinFET combination |
CN107039535B (zh) * | 2016-02-03 | 2019-12-31 | 中芯国际集成电路制造(上海)有限公司 | 电容器件及其形成方法 |
CN113540019B (zh) * | 2020-04-20 | 2023-07-21 | 中芯国际集成电路制造(上海)有限公司 | 可变电容器及可变电容器的形成方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH01149453A (ja) * | 1987-12-04 | 1989-06-12 | Nec Corp | 半導体記憶装置 |
US5451809A (en) * | 1994-09-07 | 1995-09-19 | Kabushiki Kaisha Toshiba | Smooth surface doped silicon film formation |
US6236079B1 (en) * | 1997-12-02 | 2001-05-22 | Kabushiki Kaisha Toshiba | Dynamic semiconductor memory device having a trench capacitor |
JP3455097B2 (ja) * | 1997-12-04 | 2003-10-06 | 株式会社東芝 | ダイナミック型半導体記憶装置及びその製造方法 |
TW357456B (en) * | 1998-01-06 | 1999-05-01 | Vanguard Int Semiconduct Corp | Method of manufacturing a trench storage capacitor embedded in a semiconductor substrate |
DE10045694A1 (de) * | 2000-09-15 | 2002-04-04 | Infineon Technologies Ag | Halbleiterspeicherzelle mit Grabenkondensator und Auswahltransistor und Verfahren zu ihrer Herstellung |
DE10120053A1 (de) * | 2001-04-24 | 2002-11-14 | Infineon Technologies Ag | Stressreduziertes Schichtsystem |
US6653678B2 (en) * | 2001-07-13 | 2003-11-25 | International Business Machines Corporation | Reduction of polysilicon stress in trench capacitors |
US6563160B2 (en) * | 2001-08-09 | 2003-05-13 | International Business Machines Corporation | High dielectric constant materials forming components of DRAM such as deep-trench capacitors and gate dielectric (insulators) for support circuits |
US6635525B1 (en) * | 2002-06-03 | 2003-10-21 | International Business Machines Corporation | Method of making backside buried strap for SOI DRAM trench capacitor |
-
2004
- 2004-01-06 JP JP2004001073A patent/JP3927179B2/ja not_active Expired - Lifetime
- 2004-04-06 US US10/817,954 patent/US7019349B2/en not_active Expired - Fee Related
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US20050145913A1 (en) | 2005-07-07 |
JP2005197404A (ja) | 2005-07-21 |
US7019349B2 (en) | 2006-03-28 |
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