JP2004168637A - 基材上に圧電性厚膜を製造する方法 - Google Patents
基材上に圧電性厚膜を製造する方法 Download PDFInfo
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- JP2004168637A JP2004168637A JP2003351028A JP2003351028A JP2004168637A JP 2004168637 A JP2004168637 A JP 2004168637A JP 2003351028 A JP2003351028 A JP 2003351028A JP 2003351028 A JP2003351028 A JP 2003351028A JP 2004168637 A JP2004168637 A JP 2004168637A
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Abstract
【解決手段】粉末の形態をした圧電性セラミック材料を用意すること。この粉末材料を、低融点の金属酸化物の液相前駆物質であって、後のアニーリングにより分解して当該金属酸化物になるのに適した液相前駆物質と混合することにより、液体混合物を作ること。次に、この液体混合物を乾燥させて析出物を作り、この析出物をミル加工して粉末析出物をにする。この粉末析出物に有機キャリヤーを加え、当該析出物を更にミル加工してペーストを作る。このペーストの層を湿った膜として基材上に被着させた後、基板上の当該ペーストを厚膜に変えるのに十分な温度で、且つ十分な時間アニーリングすること、を含む圧電性セラミック厚膜の製造方法。
【選択図】 図1
Description
・粉末の形態をした圧電性セラミック材料を用意すること、
・この粉末材料を、低融点の金属酸化物の液相前駆物質であって、後のアニーリングにより分解して当該金属酸化物になるのに適合した液相前駆物質と混合することにより、液体混合物を作ること、
・この液体混合物を乾燥させて析出物を作ること、
・この析出物をミル加工(milling)して粉末析出物を作ること、
・この粉末析出物に有機キャリヤーを加えること、
・当該析出物を更にミル加工してペーストを作ること、
・このペーストの層を、湿った膜として、基材上に被着させること、及び
・この層を被着した基材を、当該ペーストを厚膜に変えるのに十分な温度で且つ十分な時間アニーリングすること、
を含む。
例1では、酸化ビスマスと酸化リチウムを焼結助剤として選択した。
例2では、酸化鉛を焼結助剤として選択した。
0.02298モルの酢酸鉛三水和物を105℃の高温で40gの酢酸に溶解させた。
Claims (38)
- 基材上に圧電性セラミックの厚膜を製造する方法であって、
・粉末の形態をした圧電性セラミック材料を用意すること、
・この粉末材料を、低融点の金属酸化物の液相前駆物質であって、後のアニーリングにより分解して当該金属酸化物になるのに適合した液相前駆物質と混合することにより、液体混合物を作ること、
・この液体混合物を乾燥させて析出物を作ること、
・この析出物をミル加工して粉末析出物を作ること、
・この粉末析出物に有機キャリヤーを加えること、
・当該析出物を更にミル加工してペーストを作ること、
・このペーストの層を、湿った膜として、基材上に被着させること、及び
・この層を被着した基材を、当該ペーストを厚膜に変えるのに十分な温度で且つ十分な時間アニーリングすること、
を含む圧電性セラミック厚膜の製造方法。 - 前記圧電性セラミック材料が圧電効果を示す無機セラミック材料である、請求項1記載の方法。
- 前記圧電性セラミック材料がジルコン酸チタン酸鉛(PZT)である、請求項2記載の方法。
- 前記金属酸化物が高温でのアニーリングによりガラス相を形成するのに適合している、請求項1記載の方法。
- 前記金属酸化物をLi2O、Bi2O3及びPbOのうちの1種又は2種以上から選択する、請求項4記載の方法。
- 前記液相前駆物質がLi2O及びBi2O3の液相前駆物質の組み合わせである、請求項5記載の方法。
- 前記Li2Oの液相前駆物質がエタノール中に溶解したリチウムエトキシドである、請求項5又は6記載の方法。
- 前記Bi2O3の液相前駆物質が酢酸に溶解した硝酸ビスマスである、請求項5又は6記載の方法。
- 前記Li2O及びBi2O3の液相前駆物質を混合してLi−Bi酢酸溶液を作る、請求項6から8までのいずれか一つに記載の方法。
- 前記金属酸化物がPbOであり、前記液相前駆物質が酢酸鉛の溶液である、請求項5記載の方法。
- 前記粉末の圧電性材料がエタノール中の懸濁液の形をしている、請求項1から10までのいずれか一つに記載の方法。
- 前記粉末の圧電性材料が細粒化されていて、平均粒子寸法が約1.0μm未満である、請求項11記載の方法。
- 前記平均粒子寸法が約0.5μmである、請求項12記載の方法。
- 前記厚膜における前記金属酸化物の総量が約1重量%と5重量%の間である、請求項1から13までのいずれか一つに記載の方法。
- 前記懸濁液をLi−Bi酢酸溶液又は酢酸鉛溶液と混合して、液体混合物を作る、請求項11記載の方法。
- 前記液体混合物を高温で乾燥させて乾燥した析出物を作る、請求項15記載の方法。
- 前記液体混合物を約75℃と105℃の間の温度で最高10時間乾燥させる、請求項16記載の方法。
- 前記乾燥した析出物を粉末析出物にする、請求項16又は17記載の方法。
- 前記乾燥した析出物をボールミルでミル加工して前記粉末析出物を作る、請求項18記載の方法。
- 前記粉末前駆物質に有機キャリヤーを加える、請求項18又は19記載の方法。
- 前記有機キャリヤーをエチルセルロース、テルピネオール、及びESL400有機結合剤のうちの1種以上から選択する、請求項20記載の方法。
- 前記有機キャリヤーがESL400有機結合剤である、請求項21記載の方法。
- 前記粉末析出物及び有機キャリヤーをミル加工してペーストを作る、請求項18から22までのいずれか一つに記載の方法。
- 前記ペーストを印刷法により湿った膜として前記基材の表面へ被着させる、請求項23記載の方法。
- 前記印刷法がスクリーン印刷法である、請求項24記載の方法。
- 前記層を被着した基材をアニーリング前に乾燥させる、請求項1から25までのいずれか一つに記載の方法。
- アニーリング前に前記膜に静水圧を適用する、請求項1から25までのいずれか一つに記載の方法。
- 前記乾燥の温度が約20℃と約175℃の間である、請求項26記載の方法。
- 前記層を被着した基材を約800℃と約1000℃の間の温度でアニーリングする、請求項1から28までのいずれか一つに記載の方法。
- 前記アニーリングを約10分と約4時間の間で行う、請求項29記載の方法。
- 前記基材がシリコン製である、請求項1から30までのいずれか一つに記載の方法。
- 前記基材の表面が白金の被覆を有し、前記ペーストをこの白金被覆上に被着させる、請求項1から31までのいずれか一つに記載の方法。
- 前記圧電性セラミックの厚膜上に金属電極を形成する、請求項1から32までのいずれか一つに記載の方法。
- 前記金属が銀であり、この電極材料をスクリーン印刷法により前記膜の上に被着させる、請求項33記載の方法。
- 前記膜を被着した基材を高温で焼成して前記電極を形成する、請求項34記載の方法。
- 図1と例1又は例2を参照して実質的に明細書に記載されたとおりの方法である、基材上に圧電性セラミックの厚膜を製造する方法。
- 請求項1から36までのいずれか一つに記載の方法により作られた圧電性セラミックの厚膜を上に有する基材。
- 圧電性セラミックの厚膜を有する圧電センサー又はアクチュエータであって、当該厚膜が請求項1から36までのいずれか一つに記載の方法により前記基材上に形成されている圧電センサー又はアクチュエータ。
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US7713576B2 (en) | 2010-05-11 |
JP4795633B2 (ja) | 2011-10-19 |
US20040071864A1 (en) | 2004-04-15 |
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