JP4795633B2 - 基材上に圧電性厚膜を製造する方法 - Google Patents
基材上に圧電性厚膜を製造する方法 Download PDFInfo
- Publication number
- JP4795633B2 JP4795633B2 JP2003351028A JP2003351028A JP4795633B2 JP 4795633 B2 JP4795633 B2 JP 4795633B2 JP 2003351028 A JP2003351028 A JP 2003351028A JP 2003351028 A JP2003351028 A JP 2003351028A JP 4795633 B2 JP4795633 B2 JP 4795633B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- powder
- film
- piezoelectric ceramic
- paste
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 238000000034 method Methods 0.000 claims abstract description 50
- 239000000843 powder Substances 0.000 claims abstract description 37
- 239000000919 ceramic Substances 0.000 claims abstract description 29
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 24
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 24
- 239000002244 precipitate Substances 0.000 claims abstract description 18
- 239000002243 precursor Substances 0.000 claims abstract description 18
- 238000000137 annealing Methods 0.000 claims abstract description 17
- 239000007791 liquid phase Substances 0.000 claims abstract description 15
- 239000007788 liquid Substances 0.000 claims abstract description 12
- 239000000203 mixture Substances 0.000 claims abstract description 12
- 229910010293 ceramic material Inorganic materials 0.000 claims abstract description 10
- 238000001035 drying Methods 0.000 claims abstract description 6
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 33
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 31
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 16
- 230000008569 process Effects 0.000 claims description 16
- 238000007639 printing Methods 0.000 claims description 11
- 239000000725 suspension Substances 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 claims description 7
- 229910018068 Li 2 O Inorganic materials 0.000 claims description 7
- 239000011230 binding agent Substances 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 239000012071 phase Substances 0.000 claims description 5
- 238000007650 screen-printing Methods 0.000 claims description 5
- 230000002706 hydrostatic effect Effects 0.000 claims description 4
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims description 4
- AZVCGYPLLBEUNV-UHFFFAOYSA-N lithium;ethanolate Chemical group [Li+].CC[O-] AZVCGYPLLBEUNV-UHFFFAOYSA-N 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000001856 Ethyl cellulose Substances 0.000 claims description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims description 2
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 claims description 2
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 claims description 2
- 229920001249 ethyl cellulose Polymers 0.000 claims description 2
- 235000019325 ethyl cellulose Nutrition 0.000 claims description 2
- 229940116411 terpineol Drugs 0.000 claims description 2
- 239000012530 fluid Substances 0.000 claims 2
- XWNOTOKFKBDMAP-UHFFFAOYSA-N [Bi].[N+](=O)(O)[O-] Chemical group [Bi].[N+](=O)(O)[O-] XWNOTOKFKBDMAP-UHFFFAOYSA-N 0.000 claims 1
- 235000013312 flour Nutrition 0.000 claims 1
- 238000002156 mixing Methods 0.000 abstract description 8
- 238000003801 milling Methods 0.000 abstract description 5
- 238000000151 deposition Methods 0.000 abstract description 3
- 238000002844 melting Methods 0.000 abstract description 3
- 239000012254 powdered material Substances 0.000 abstract 1
- 230000009466 transformation Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 45
- 238000005245 sintering Methods 0.000 description 16
- 239000000243 solution Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 11
- 229960000583 acetic acid Drugs 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 230000000996 additive effect Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 229940046892 lead acetate Drugs 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 238000000498 ball milling Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 3
- YEXPOXQUZXUXJW-UHFFFAOYSA-N lead(II) oxide Inorganic materials [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- 229910052758 niobium Inorganic materials 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- 239000012362 glacial acetic acid Substances 0.000 description 2
- RXPAJWPEYBDXOG-UHFFFAOYSA-N hydron;methyl 4-methoxypyridine-2-carboxylate;chloride Chemical compound Cl.COC(=O)C1=CC(OC)=CC=N1 RXPAJWPEYBDXOG-UHFFFAOYSA-N 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000000518 rheometry Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- KQNKJJBFUFKYFX-UHFFFAOYSA-N acetic acid;trihydrate Chemical compound O.O.O.CC(O)=O KQNKJJBFUFKYFX-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- FBXVOTBTGXARNA-UHFFFAOYSA-N bismuth;trinitrate;pentahydrate Chemical compound O.O.O.O.O.[Bi+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O FBXVOTBTGXARNA-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical compound [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 1
- 229910001947 lithium oxide Inorganic materials 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 150000003057 platinum Chemical class 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000000638 stimulation Effects 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
- C04B35/49—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates
- C04B35/491—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates based on lead zirconates and lead titanates, e.g. PZT
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/628—Coating the powders or the macroscopic reinforcing agents
- C04B35/62802—Powder coating materials
- C04B35/62805—Oxide ceramics
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/628—Coating the powders or the macroscopic reinforcing agents
- C04B35/62886—Coating the powders or the macroscopic reinforcing agents by wet chemical techniques
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
- C04B35/6303—Inorganic additives
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/09—Forming piezoelectric or electrostrictive materials
- H10N30/093—Forming inorganic materials
- H10N30/097—Forming inorganic materials by sintering
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3201—Alkali metal oxides or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3201—Alkali metal oxides or oxide-forming salts thereof
- C04B2235/3203—Lithium oxide or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3244—Zirconium oxides, zirconates, hafnium oxides, hafnates, or oxide-forming salts thereof
- C04B2235/3248—Zirconates or hafnates, e.g. zircon
- C04B2235/3249—Zirconates or hafnates, e.g. zircon containing also titanium oxide or titanates, e.g. lead zirconate titanate (PZT)
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3296—Lead oxides, plumbates or oxide forming salts thereof, e.g. silver plumbate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3298—Bismuth oxides, bismuthates or oxide forming salts thereof, e.g. zinc bismuthate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/44—Metal salt constituents or additives chosen for the nature of the anions, e.g. hydrides or acetylacetonate
- C04B2235/449—Organic acids, e.g. EDTA, citrate, acetate, oxalate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
- C04B2235/5445—Particle size related information expressed by the size of the particles or aggregates thereof submicron sized, i.e. from 0,1 to 1 micron
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/80—Phases present in the sintered or melt-cast ceramic products other than the main phase
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8548—Lead-based oxides
- H10N30/8554—Lead-zirconium titanate [PZT] based
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Structural Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Composite Materials (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Producing Shaped Articles From Materials (AREA)
Description
・粉末の形態をした圧電性セラミック材料を用意すること、
・この粉末材料を、低融点の金属酸化物の液相前駆物質であって、後のアニーリングにより分解して当該金属酸化物になるのに適合した液相前駆物質と混合することにより、液体混合物を作ること、
・この液体混合物を乾燥させて析出物を作ること、
・この析出物をミル加工(milling)して粉末析出物を作ること、
・この粉末析出物に有機キャリヤーを加えること、
・当該析出物を更にミル加工してペーストを作ること、
・このペーストの層を、湿った膜として、基材上に被着させること、及び
・この層を被着した基材を、当該ペーストを厚膜に変えるのに十分な温度で且つ十分な時間アニーリングすること、
を含む。
例1では、酸化ビスマスと酸化リチウムを焼結助剤として選択した。
例2では、酸化鉛を焼結助剤として選択した。
0.02298モルの酢酸鉛三水和物を105℃の高温で40gの酢酸に溶解させた。
Claims (22)
- 基材上に圧電性セラミック厚膜を製造する方法であって、
・金属酸化物Li 2 O及びBi 2 O 3 の液相前駆物質と酢酸とのLi−Bi溶液を作るとともに、粉末の形態をした圧電性セラミック材料としてのジルコン酸チタン酸鉛(PZT)と流体媒体とのPZT懸濁液を作り、
・PZT懸濁液とLi−Bi溶液との液体混合物を作り、
・液体混合物を乾燥させて乾燥析出物を作り、
・乾燥析出物をミル加工して粉末析出物を作り、
・粉末析出物に有機キャリヤーを加え、
・有機キャリヤーを加えた粉末析出物を更にミル加工してペーストを作り、
・ペーストを湿った膜として基材上に被着させて乾燥することを繰り返して厚い層を作り、
・最後に、層を被着した基材を800℃と1000℃の間の温度で10分と4時間の間の時間アニーリングして、当該層を圧電性セラミック厚膜に変えること、
を含む圧電性セラミック厚膜の製造方法。 - 800℃と1000℃の間の温度でのアニーリングにより前記金属酸化物のガラス相が形成される、請求項1記載の方法。
- 前記Li2Oの液相前駆物質がエタノール中に溶解したリチウムエトキシドである、請求項1又は2記載の方法。
- 前記Bi2O3の液相前駆物質が硝酸ビスマスである、請求項1又は2記載の方法。
- 前記流体媒体がエタノールである、請求項1から4までのいずれか一つに記載の方法。
- 前記粉末の平均粒子寸法が1.0μm未満である、請求項1から5までのいずれか一つに記載の方法。
- 前記平均粒子寸法が0.5μmである、請求項6記載の方法。
- 前記厚膜における前記金属酸化物の総量が1重量%と5重量%の間である、請求項1から7までのいずれか一つに記載の方法。
- 前記液体混合物を75℃と105℃の間の温度で乾燥させて乾燥析出物を作る、請求項1から8までのいずれか一つに記載の方法。
- 前記液体混合物を最高10時間乾燥させる、請求項9記載の方法。
- 前記乾燥析出物をボールミルでミル加工して前記粉末析出物を作る、請求項1から10までのいずれか一つに記載の方法。
- 前記有機キャリヤーをエチルセルロース、テルピネオール、及びESL400有機結合剤のうちの1種以上から選択する、請求項1から11までのいずれか一つに記載の方法。
- 前記有機キャリヤーがESL400有機結合剤である、請求項12記載の方法。
- 前記ペーストを印刷法により湿った膜として前記基材上へ被着させる、請求項1から13までのいずれか一つに記載の方法。
- 前記印刷法がスクリーン印刷法である、請求項14記載の方法。
- 前記層を被着した基材をアニーリング前に乾燥させる、請求項1から15までのいずれか一つに記載の方法。
- アニーリング前に前記層に静水圧を適用する、請求項1から15までのいずれか一つに記載の方法。
- 前記乾燥の温度が20℃と175℃の間である、請求項16記載の方法。
- 前記基材がシリコン製である、請求項1から18までのいずれか一つに記載の方法。
- 前記基材の表面が白金の被覆を有し、前記ペーストをこの白金被覆上に被着させる、請求項1から19までのいずれか一つに記載の方法。
- 前記圧電性セラミック厚膜上に金属電極を形成する、請求項1から20までのいずれか一つに記載の方法。
- 前記金属電極の金属が銀であり、この金属をスクリーン印刷法により前記膜の上に被着させる、請求項21記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SG200206099-4 | 2002-10-09 | ||
SG200206099A SG115500A1 (en) | 2002-10-09 | 2002-10-09 | Method to produce a reliable piezoelectric thick film on a substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004168637A JP2004168637A (ja) | 2004-06-17 |
JP4795633B2 true JP4795633B2 (ja) | 2011-10-19 |
Family
ID=32067562
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003351028A Expired - Fee Related JP4795633B2 (ja) | 2002-10-09 | 2003-10-09 | 基材上に圧電性厚膜を製造する方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7713576B2 (ja) |
JP (1) | JP4795633B2 (ja) |
SG (1) | SG115500A1 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7279131B2 (en) * | 2004-07-01 | 2007-10-09 | Uop Llc | Method and apparatus for mass analysis of samples |
CN100344966C (zh) * | 2004-11-10 | 2007-10-24 | 浣石 | 一种氮氧化物传感器的制作工艺 |
KR100759366B1 (ko) | 2006-04-24 | 2007-09-19 | 한국기계연구원 | 질산 용액에 처리된 피지티 분말을 첨가한 솔-젤 후막 용액및 상기 용액을 이용한 솔-젤 후막 제조 방법 |
US8736151B2 (en) * | 2006-09-26 | 2014-05-27 | Velos Industries, LLC | Electric generator |
US9598319B2 (en) * | 2007-10-18 | 2017-03-21 | Ceramtec Gmbh | Piezoceramic multi-layer element |
JP5690207B2 (ja) * | 2011-05-11 | 2015-03-25 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
EP2833424A4 (en) * | 2012-03-30 | 2015-11-11 | Ngk Insulators Ltd | PIEZOELECTRIC / ELECTROSTRICTIVE FILM TYPE ELEMENT, AND METHOD FOR PRODUCTION OF PIEZOELECTRIC / ELECTROSTRICTIVE FILM TYPE ELEMENT |
JP6081449B2 (ja) * | 2012-03-30 | 2017-02-15 | 日本碍子株式会社 | 圧電/電歪膜型素子及び圧電/電歪膜型素子を製造する方法 |
CN105355777A (zh) * | 2015-10-21 | 2016-02-24 | 天津大学 | 氧化铝基板上pnn-pzn-pzt多层并联压电厚膜的制备方法 |
KR20170136875A (ko) * | 2016-06-02 | 2017-12-12 | 주식회사 모다이노칩 | 압전 소자 및 이의 제조 방법 |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5630780A (en) * | 1979-08-20 | 1981-03-27 | Matsushita Electric Ind Co Ltd | Manufacture of piezoelectric porcelain |
US4283228A (en) * | 1979-12-05 | 1981-08-11 | University Of Illinois Foundation | Low temperature densification of PZT ceramics |
JPS60144984A (ja) * | 1984-01-07 | 1985-07-31 | Fuji Elelctrochem Co Ltd | 圧電磁器組成物 |
GB2161647A (en) | 1984-07-10 | 1986-01-15 | Gen Electric Co Plc | Piezoelectric devices |
JPS62105949A (ja) * | 1985-10-31 | 1987-05-16 | 東芝セラミツクス株式会社 | 難焼結性セラミツク用焼結助剤の添加方法 |
JPS62162670A (ja) * | 1986-01-09 | 1987-07-18 | 住友金属鉱山株式会社 | チタン酸ジルコン酸鉛焼結体の製法 |
US4946710A (en) * | 1987-06-02 | 1990-08-07 | National Semiconductor Corporation | Method for preparing PLZT, PZT and PLT sol-gels and fabricating ferroelectric thin films |
US4963390A (en) * | 1988-10-05 | 1990-10-16 | The Aerospace Corporation | Metallo-organic solution deposition (MOSD) of transparent, crystalline ferroelectric films |
DK163944C (da) * | 1990-02-07 | 1992-09-21 | Radiometer As | Glaselektrode og anvendelse af denne |
JPH03283583A (ja) | 1990-03-30 | 1991-12-13 | Mazda Motor Corp | 圧電体厚膜の製造方法 |
JPH0674173B2 (ja) * | 1990-09-27 | 1994-09-21 | 岩崎通信機株式会社 | チタン酸ジルコン酸鉛の製造方法 |
JPH06506184A (ja) * | 1991-04-03 | 1994-07-14 | アメリカン・スーパーコンダクター・コーポレーション | エレクトロセラミックス及びその製造方法 |
JPH04318985A (ja) * | 1991-04-17 | 1992-11-10 | Murata Mfg Co Ltd | 高温超伝導体高温相厚膜の形成方法 |
JPH0529771A (ja) * | 1991-07-23 | 1993-02-05 | Fujitsu Ltd | セラミツク回路基板およびその製造方法 |
US5271955A (en) * | 1992-04-06 | 1993-12-21 | Motorola, Inc. | Method for making a semiconductor device having an anhydrous ferroelectric thin film |
US5308807A (en) * | 1992-07-15 | 1994-05-03 | Nalco Chemical Company | Production of lead zirconate titanates using zirconia sol as a reactant |
US5433917A (en) * | 1993-09-16 | 1995-07-18 | The Penn State Research Foundation | PZT ceramic compositions having reduced sintering temperatures and process for producing same |
JPH07315928A (ja) * | 1994-05-23 | 1995-12-05 | Murata Mfg Co Ltd | 鉛含有セラミックス粉体の製造方法 |
SG88736A1 (en) | 1997-11-07 | 2002-05-21 | Inst Data Storage | Laminated multilayer thick-film actuator |
JPH11348277A (ja) * | 1998-06-04 | 1999-12-21 | Ricoh Co Ltd | インクジェットプリンタヘッド |
JP2000162434A (ja) * | 1998-11-27 | 2000-06-16 | Kyocera Corp | 偏光子及びその製造方法 |
JP3508682B2 (ja) | 1999-03-02 | 2004-03-22 | セイコーエプソン株式会社 | 圧電アクチュエータ、インクジェット式記録ヘッド、これらの製造方法及びインクジェットプリンタ |
JP2001002469A (ja) * | 1999-04-22 | 2001-01-09 | Murata Mfg Co Ltd | 圧電体ペーストならびにこれを用いた圧電体膜および圧電体部品 |
GB9909375D0 (en) * | 1999-04-24 | 1999-06-23 | Secr Defence | Improvements in or relating to sol gel processing of lead zirconate titanate thin films |
JP2000328223A (ja) * | 1999-05-25 | 2000-11-28 | Agency Of Ind Science & Technol | 積層構造体及びその原料粉、及び、圧電アクチュエータ |
US6194124B1 (en) * | 1999-08-12 | 2001-02-27 | E. I. Du Pont De Nemours And Company | Photosensitive ceramic compositions containing polycarbonate polymers |
KR100369118B1 (ko) * | 2000-05-13 | 2003-01-24 | 한국과학기술연구원 | 스크린 프린팅에 의한 고밀도 세라믹 후막 제조방법 |
JP4873206B2 (ja) * | 2001-02-15 | 2012-02-08 | 曽田香料株式会社 | 6−メチル−4,6−ヘプタジエン−2−オンの製造方法 |
KR100420929B1 (ko) | 2001-05-26 | 2004-03-02 | 한국과학기술연구원 | 고밀도 압전 후막 및 그 제조방법 |
-
2002
- 2002-10-09 SG SG200206099A patent/SG115500A1/en unknown
-
2003
- 2003-10-08 US US10/680,229 patent/US7713576B2/en not_active Expired - Fee Related
- 2003-10-09 JP JP2003351028A patent/JP4795633B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
SG115500A1 (en) | 2005-10-28 |
US7713576B2 (en) | 2010-05-11 |
US20040071864A1 (en) | 2004-04-15 |
JP2004168637A (ja) | 2004-06-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9543501B2 (en) | Metal oxide | |
JP5641668B2 (ja) | 低焼結温度を有する強誘電性セラミック材料 | |
JP4795633B2 (ja) | 基材上に圧電性厚膜を製造する方法 | |
Kimura et al. | Lead zirconate titanate-based piezoceramics | |
CN101217180B (zh) | 一种无铅压电厚膜制备方法 | |
JPH0992896A (ja) | 圧電/電歪膜型素子及びその製造方法 | |
JP2007123683A (ja) | 強誘電体薄膜の製造方法、強誘電体薄膜 | |
Yao et al. | Screen-printed piezoelectric ceramic thick films with sintering additives introduced through a liquid-phase approach | |
Zhang et al. | Enhanced pyroelectric and piezoelectric figure of merit of porous Bi0. 5 (Na0. 82K0. 18) 0.5 TiO3 lead‐free ferroelectric thick films | |
JP5180198B2 (ja) | 圧電/電歪セラミックス及び圧電/電歪素子 | |
JP2009298621A (ja) | 圧電材料、圧電素子 | |
CN102906891A (zh) | 压电元件的制造方法 | |
JPH10209517A (ja) | 圧電素子 | |
JP2014222685A (ja) | 強誘電体膜付きシリコン基板 | |
JP4670497B2 (ja) | 薄膜電極用ペースト並びに薄膜電極及び薄膜素子の製造方法 | |
Choy et al. | Piezoelectric and dielectric characteristics of lead-free BNKLBT ceramic thick film and multilayered piezoelectric actuators | |
Mohammadi et al. | Piezoelectric pressure Sensor based on Enhanced thin-film PZT diaphragm containing nanocrystalline powders | |
JPH10290035A (ja) | 圧電体素子及びその製造方法 | |
JP2004186436A (ja) | 圧電/電歪膜型素子 | |
CN107346802B (zh) | 压电膜及其制备方法 | |
Yu et al. | Preparation, structure, and properties of 0.3 Pb (Zn1/3Nb2/3) O3-0.7 PbTiO3 thin films on LaNiO3/YSZ/Si substrates | |
KR101704180B1 (ko) | 아조벤젠 결합 pvdf필름을 이용하는 압전소자 및 그 제조방법 | |
Ji et al. | Enhanced Structures and Electrical Properties of Lead‐Free K0. 5Na0. 5NbO3–Bi0. 5Na0. 5TiO3 0–3 Composite FerroelectricThick Films | |
US20030134156A1 (en) | High density piezoelectric thick film and manufacturing method thereof | |
Torah | Optimisation of the piezoelectric properties of thick-film piezoceramic devices |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20050720 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20061017 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20070117 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20070122 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070417 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070904 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20080226 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080526 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20080825 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20081024 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110602 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110728 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4795633 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140805 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |