JP2004096066A5 - - Google Patents

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JP2004096066A5
JP2004096066A5 JP2003060670A JP2003060670A JP2004096066A5 JP 2004096066 A5 JP2004096066 A5 JP 2004096066A5 JP 2003060670 A JP2003060670 A JP 2003060670A JP 2003060670 A JP2003060670 A JP 2003060670A JP 2004096066 A5 JP2004096066 A5 JP 2004096066A5
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harmonic
resonance
respect
lower electrode
etching rate
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JP2004096066A (ja
JP4370789B2 (ja
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Priority claimed from JP2003060670A external-priority patent/JP4370789B2/ja
Priority to JP2003060670A priority Critical patent/JP4370789B2/ja
Priority to US10/615,915 priority patent/US7527016B2/en
Priority to TW092119056A priority patent/TW200402759A/zh
Priority to CN2007101823491A priority patent/CN101160014B/zh
Priority to CNB031466818A priority patent/CN100355038C/zh
Priority to KR1020030047603A priority patent/KR101054558B1/ko
Publication of JP2004096066A publication Critical patent/JP2004096066A/ja
Publication of JP2004096066A5 publication Critical patent/JP2004096066A5/ja
Priority to US11/756,097 priority patent/US8251011B2/en
Publication of JP4370789B2 publication Critical patent/JP4370789B2/ja
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JP2003060670A 2002-07-12 2003-03-06 プラズマ処理装置及び可変インピーダンス手段の校正方法 Expired - Fee Related JP4370789B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2003060670A JP4370789B2 (ja) 2002-07-12 2003-03-06 プラズマ処理装置及び可変インピーダンス手段の校正方法
US10/615,915 US7527016B2 (en) 2002-07-12 2003-07-10 Plasma processing apparatus
CNB031466818A CN100355038C (zh) 2002-07-12 2003-07-11 等离子体处理装置和可变阻抗装置的校正方法
CN2007101823491A CN101160014B (zh) 2002-07-12 2003-07-11 等离子体处理装置和可变阻抗装置的校正方法
TW092119056A TW200402759A (en) 2002-07-12 2003-07-11 Plasma treatment apparatus
KR1020030047603A KR101054558B1 (ko) 2002-07-12 2003-07-12 플라즈마 처리 장치 및 가변 임피던스 수단의 교정 방법
US11/756,097 US8251011B2 (en) 2002-07-12 2007-05-31 Plasma processing apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002204928 2002-07-12
JP2003060670A JP4370789B2 (ja) 2002-07-12 2003-03-06 プラズマ処理装置及び可変インピーダンス手段の校正方法

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JP2008331537A Division JP4985637B2 (ja) 2002-07-12 2008-12-25 プラズマ処理方法

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JP2004096066A JP2004096066A (ja) 2004-03-25
JP2004096066A5 true JP2004096066A5 (enExample) 2006-03-23
JP4370789B2 JP4370789B2 (ja) 2009-11-25

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US (2) US7527016B2 (enExample)
JP (1) JP4370789B2 (enExample)
CN (1) CN100355038C (enExample)
TW (1) TW200402759A (enExample)

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