TWI299965B - - Google Patents
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- Publication number
- TWI299965B TWI299965B TW091132714A TW91132714A TWI299965B TW I299965 B TWI299965 B TW I299965B TW 091132714 A TW091132714 A TW 091132714A TW 91132714 A TW91132714 A TW 91132714A TW I299965 B TWI299965 B TW I299965B
- Authority
- TW
- Taiwan
- Prior art keywords
- impedance
- plasma processing
- matching circuit
- processing chamber
- discharge
- Prior art date
Links
- 238000012545 processing Methods 0.000 claims description 255
- 238000013461 design Methods 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 44
- 238000003860 storage Methods 0.000 claims description 35
- 230000000875 corresponding effect Effects 0.000 claims description 28
- 238000009832 plasma treatment Methods 0.000 claims description 21
- 238000001514 detection method Methods 0.000 claims description 17
- 238000004891 communication Methods 0.000 claims description 13
- 239000000523 sample Substances 0.000 claims description 12
- 230000002079 cooperative effect Effects 0.000 claims description 6
- 238000002847 impedance measurement Methods 0.000 claims description 6
- 238000003672 processing method Methods 0.000 claims description 4
- 210000002381 plasma Anatomy 0.000 claims 71
- 238000004904 shortening Methods 0.000 claims 2
- 238000012937 correction Methods 0.000 claims 1
- 239000000284 extract Substances 0.000 claims 1
- 239000002023 wood Substances 0.000 claims 1
- 239000003990 capacitor Substances 0.000 description 125
- 230000003071 parasitic effect Effects 0.000 description 31
- 230000005284 excitation Effects 0.000 description 26
- 238000004364 calculation method Methods 0.000 description 15
- 238000005259 measurement Methods 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 11
- 229910052770 Uranium Inorganic materials 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 239000004020 conductor Substances 0.000 description 7
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 7
- 239000012212 insulator Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000012423 maintenance Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000013500 data storage Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/32—Plasma torches using an arc
- H05H1/34—Details, e.g. electrodes, nozzles
- H05H1/36—Circuit arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001361378 | 2001-11-27 | ||
| JP2001367638 | 2001-11-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200300649A TW200300649A (en) | 2003-06-01 |
| TWI299965B true TWI299965B (enExample) | 2008-08-11 |
Family
ID=26624717
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091132714A TW200300649A (en) | 2001-11-27 | 2002-11-06 | Plasma processing apparatus, its driving method, matching circuit design system, and plasma processing method |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7095178B2 (enExample) |
| KR (1) | KR100497585B1 (enExample) |
| TW (1) | TW200300649A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI563881B (en) * | 2011-10-31 | 2016-12-21 | Semes Co Ltd | Substrate processing device and impedance matching method |
Families Citing this family (71)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4553247B2 (ja) * | 2004-04-30 | 2010-09-29 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP4344886B2 (ja) * | 2004-09-06 | 2009-10-14 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US20060118040A1 (en) * | 2004-12-02 | 2006-06-08 | Chien-Hsing Lai | Chemical vapor deposition apparatus having a reaction chamber condition detection function and a detection method thereof |
| JP4789234B2 (ja) | 2005-02-03 | 2011-10-12 | 三菱重工食品包装機械株式会社 | 成膜装置，整合器，及びインピーダンス制御方法 |
| JP4817923B2 (ja) * | 2006-03-29 | 2011-11-16 | 三井造船株式会社 | プラズマ生成装置及びプラズマ生成方法 |
| US7902991B2 (en) * | 2006-09-21 | 2011-03-08 | Applied Materials, Inc. | Frequency monitoring to detect plasma process abnormality |
| US20170213734A9 (en) * | 2007-03-30 | 2017-07-27 | Alexei Marakhtanov | Multifrequency capacitively coupled plasma etch chamber |
| JP4983575B2 (ja) * | 2007-11-30 | 2012-07-25 | パナソニック株式会社 | プラズマ処理装置およびプラズマ処理方法 |
| JP5217569B2 (ja) * | 2008-03-31 | 2013-06-19 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US8847561B2 (en) * | 2008-05-07 | 2014-09-30 | Advanced Energy Industries, Inc. | Apparatus, system, and method for controlling a matching network based on information characterizing a cable |
| CN101754566B (zh) * | 2008-12-10 | 2012-07-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种阻抗匹配器、阻抗匹配方法和等离子体处理系统 |
| US8674844B2 (en) * | 2009-03-19 | 2014-03-18 | Applied Materials, Inc. | Detecting plasma chamber malfunction |
| KR101105801B1 (ko) * | 2009-10-15 | 2012-01-17 | 주식회사 포스코아이씨티 | 룩업 테이블을 이용한 자기 스위치 제어 방법 및 장치 |
| TWI500804B (zh) | 2009-11-17 | 2015-09-21 | Applied Materials Inc | 具有電極ｒｆ匹配之大面積電漿處理腔室 |
| KR101151414B1 (ko) | 2010-02-23 | 2012-06-04 | 주식회사 플라즈마트 | 임피던스 정합 장치 |
| JP5582823B2 (ja) * | 2010-02-26 | 2014-09-03 | 東京エレクトロン株式会社 | 自動整合装置及びプラズマ処理装置 |
| CN102637633B (zh) * | 2011-06-17 | 2015-08-12 | 京东方科技集团股份有限公司 | 一种阵列基板制造方法及系统 |
| CN103456591B (zh) * | 2012-05-31 | 2016-04-06 | 中微半导体设备(上海)有限公司 | 自动频率调谐源和偏置射频电源的电感耦合等离子处理室 |
| KR20140059422A (ko) * | 2012-11-08 | 2014-05-16 | 엘아이지에이디피 주식회사 | 유도 결합 플라즈마 처리 장치 및 그 제어방법 |
| US9620334B2 (en) * | 2012-12-17 | 2017-04-11 | Lam Research Corporation | Control of etch rate using modeling, feedback and impedance match |
| US9666417B2 (en) | 2013-08-28 | 2017-05-30 | Sakai Display Products Corporation | Plasma processing apparatus and method for monitoring plasma processing apparatus |
| US10679824B2 (en) | 2015-06-29 | 2020-06-09 | Reno Technologies, Inc. | Capacitance variation |
| US10431428B2 (en) | 2014-01-10 | 2019-10-01 | Reno Technologies, Inc. | System for providing variable capacitance |
| US9697991B2 (en) * | 2014-01-10 | 2017-07-04 | Reno Technologies, Inc. | RF impedance matching network |
| US20160065207A1 (en) * | 2014-01-10 | 2016-03-03 | Reno Technologies, Inc. | High voltage control circuit for an electronic switch |
| US9496122B1 (en) | 2014-01-10 | 2016-11-15 | Reno Technologies, Inc. | Electronically variable capacitor and RF matching network incorporating same |
| US10454453B2 (en) * | 2014-01-10 | 2019-10-22 | Reno Technologies, Inc. | RF impedance matching network |
| US9196459B2 (en) * | 2014-01-10 | 2015-11-24 | Reno Technologies, Inc. | RF impedance matching network |
| US10455729B2 (en) | 2014-01-10 | 2019-10-22 | Reno Technologies, Inc. | Enclosure cooling system |
| US9865432B1 (en) * | 2014-01-10 | 2018-01-09 | Reno Technologies, Inc. | RF impedance matching network |
| US9755641B1 (en) | 2014-01-10 | 2017-09-05 | Reno Technologies, Inc. | High speed high voltage switching circuit |
| US9844127B2 (en) | 2014-01-10 | 2017-12-12 | Reno Technologies, Inc. | High voltage switching circuit |
| US10340879B2 (en) | 2015-02-18 | 2019-07-02 | Reno Technologies, Inc. | Switching circuit |
| US11017983B2 (en) | 2015-02-18 | 2021-05-25 | Reno Technologies, Inc. | RF power amplifier |
| US9729122B2 (en) | 2015-02-18 | 2017-08-08 | Reno Technologies, Inc. | Switching circuit |
| US9306533B1 (en) | 2015-02-20 | 2016-04-05 | Reno Technologies, Inc. | RF impedance matching network |
| US12119206B2 (en) | 2015-02-18 | 2024-10-15 | Asm America, Inc. | Switching circuit |
| US9525412B2 (en) | 2015-02-18 | 2016-12-20 | Reno Technologies, Inc. | Switching circuit |
| US9595424B2 (en) * | 2015-03-02 | 2017-03-14 | Lam Research Corporation | Impedance matching circuit for operation with a kilohertz RF generator and a megahertz RF generator to control plasma processes |
| US10984986B2 (en) | 2015-06-29 | 2021-04-20 | Reno Technologies, Inc. | Impedance matching network and method |
| US11342161B2 (en) | 2015-06-29 | 2022-05-24 | Reno Technologies, Inc. | Switching circuit with voltage bias |
| US11081316B2 (en) | 2015-06-29 | 2021-08-03 | Reno Technologies, Inc. | Impedance matching network and method |
| US11342160B2 (en) | 2015-06-29 | 2022-05-24 | Reno Technologies, Inc. | Filter for impedance matching |
| US11150283B2 (en) | 2015-06-29 | 2021-10-19 | Reno Technologies, Inc. | Amplitude and phase detection circuit |
| US11335540B2 (en) | 2015-06-29 | 2022-05-17 | Reno Technologies, Inc. | Impedance matching network and method |
| US10692699B2 (en) | 2015-06-29 | 2020-06-23 | Reno Technologies, Inc. | Impedance matching with restricted capacitor switching |
| US9761414B2 (en) * | 2015-10-08 | 2017-09-12 | Lam Research Corporation | Uniformity control circuit for use within an impedance matching circuit |
| KR101761257B1 (ko) * | 2015-10-23 | 2017-07-26 | 주식회사 영신알에프 | 매칭부 및 분석센서를 가지는 일체형 고주파 상압 플라즈마 발생장치 |
| US10297422B2 (en) * | 2015-11-04 | 2019-05-21 | Lam Research Corporation | Systems and methods for calibrating conversion models and performing position conversions of variable capacitors in match networks of plasma processing systems |
| US10009028B2 (en) | 2016-09-30 | 2018-06-26 | Lam Research Corporation | Frequency and match tuning in one state and frequency tuning in the other state |
| TWI641293B (zh) * | 2016-11-03 | 2018-11-11 | 呈睿國際股份有限公司 | 用於多變阻抗負載之射頻電漿電源供應系統及其自動匹配器與匹配方法 |
| JP6529996B2 (ja) | 2017-02-06 | 2019-06-12 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 基板処理装置、半導体装置の製造方法およびプログラム |
| KR20180092684A (ko) * | 2017-02-10 | 2018-08-20 | 주식회사 유진테크 | Icp 안테나 및 이를 포함하는 기판 처리 장치 |
| US10879044B2 (en) * | 2017-04-07 | 2020-12-29 | Lam Research Corporation | Auxiliary circuit in RF matching network for frequency tuning assisted dual-level pulsing |
| US10483090B2 (en) | 2017-07-10 | 2019-11-19 | Reno Technologies, Inc. | Restricted capacitor switching |
| US11315758B2 (en) | 2017-07-10 | 2022-04-26 | Reno Technologies, Inc. | Impedance matching using electronically variable capacitance and frequency considerations |
| US11101110B2 (en) | 2017-07-10 | 2021-08-24 | Reno Technologies, Inc. | Impedance matching network and method |
| US11476091B2 (en) | 2017-07-10 | 2022-10-18 | Reno Technologies, Inc. | Impedance matching network for diagnosing plasma chamber |
| US12334307B2 (en) | 2017-07-10 | 2025-06-17 | Asm Ip Holding B.V. | Power control for rf impedance matching network |
| US11521833B2 (en) | 2017-07-10 | 2022-12-06 | Reno Technologies, Inc. | Combined RF generator and RF solid-state matching network |
| US10714314B1 (en) | 2017-07-10 | 2020-07-14 | Reno Technologies, Inc. | Impedance matching network and method |
| US10727029B2 (en) | 2017-07-10 | 2020-07-28 | Reno Technologies, Inc | Impedance matching using independent capacitance and frequency control |
| US11289307B2 (en) | 2017-07-10 | 2022-03-29 | Reno Technologies, Inc. | Impedance matching network and method |
| US11114280B2 (en) | 2017-07-10 | 2021-09-07 | Reno Technologies, Inc. | Impedance matching with multi-level power setpoint |
| US11393659B2 (en) | 2017-07-10 | 2022-07-19 | Reno Technologies, Inc. | Impedance matching network and method |
| US12272522B2 (en) | 2017-07-10 | 2025-04-08 | Asm America, Inc. | Resonant filter for solid state RF impedance matching network |
| US11398370B2 (en) | 2017-07-10 | 2022-07-26 | Reno Technologies, Inc. | Semiconductor manufacturing using artificial intelligence |
| JP7278136B2 (ja) * | 2019-04-08 | 2023-05-19 | 東京エレクトロン株式会社 | インピーダンス整合装置、異常診断方法及び異常診断プログラム |
| US11521831B2 (en) | 2019-05-21 | 2022-12-06 | Reno Technologies, Inc. | Impedance matching network and method with reduced memory requirements |
| US11355325B2 (en) | 2020-05-28 | 2022-06-07 | Applied Materials, Inc. | Methods and systems for monitoring input power for process control in semiconductor process systems |
| KR20230036847A (ko) | 2021-09-08 | 2023-03-15 | 삼성전자주식회사 | 고전압 전원 장치 및 이를 포함하는 플라즈마 식각 장비 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2592217B2 (ja) * | 1993-11-11 | 1997-03-19 | 株式会社フロンテック | 高周波マグネトロンプラズマ装置 |
| US6252354B1 (en) * | 1996-11-04 | 2001-06-26 | Applied Materials, Inc. | RF tuning method for an RF plasma reactor using frequency servoing and power, voltage, current or DI/DT control |
| US6259334B1 (en) * | 1998-12-22 | 2001-07-10 | Lam Research Corporation | Methods for controlling an RF matching network |
| US6232236B1 (en) * | 1999-08-03 | 2001-05-15 | Applied Materials, Inc. | Apparatus and method for controlling plasma uniformity in a semiconductor wafer processing system |
| TW483037B (en) * | 2000-03-24 | 2002-04-11 | Hitachi Ltd | Semiconductor manufacturing apparatus and method of processing semiconductor wafer using plasma, and wafer voltage probe |
| JP3670208B2 (ja) * | 2000-11-08 | 2005-07-13 | アルプス電気株式会社 | プラズマ処理装置，プラズマ処理システムおよびこれらの性能確認システム，検査方法 |
| US6583572B2 (en) * | 2001-03-30 | 2003-06-24 | Lam Research Corporation | Inductive plasma processor including current sensor for plasma excitation coil |
-
2002
- 2002-11-06 TW TW091132714A patent/TW200300649A/zh not_active IP Right Cessation
- 2002-11-18 KR KR10-2002-0071613A patent/KR100497585B1/ko not_active Expired - Fee Related
- 2002-11-21 US US10/302,007 patent/US7095178B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI563881B (en) * | 2011-10-31 | 2016-12-21 | Semes Co Ltd | Substrate processing device and impedance matching method |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200300649A (en) | 2003-06-01 |
| US20030097984A1 (en) | 2003-05-29 |
| KR20030043669A (ko) | 2003-06-02 |
| KR100497585B1 (ko) | 2005-07-01 |
| US7095178B2 (en) | 2006-08-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |