JP2004031439A5 - - Google Patents

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Publication number
JP2004031439A5
JP2004031439A5 JP2002181974A JP2002181974A JP2004031439A5 JP 2004031439 A5 JP2004031439 A5 JP 2004031439A5 JP 2002181974 A JP2002181974 A JP 2002181974A JP 2002181974 A JP2002181974 A JP 2002181974A JP 2004031439 A5 JP2004031439 A5 JP 2004031439A5
Authority
JP
Japan
Prior art keywords
insulating film
wiring
embedded wiring
integrated circuit
circuit device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002181974A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004031439A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2002181974A priority Critical patent/JP2004031439A/ja
Priority claimed from JP2002181974A external-priority patent/JP2004031439A/ja
Priority to US10/465,541 priority patent/US7023091B2/en
Publication of JP2004031439A publication Critical patent/JP2004031439A/ja
Publication of JP2004031439A5 publication Critical patent/JP2004031439A5/ja
Priority to US11/239,371 priority patent/US7411301B2/en
Priority to US12/188,591 priority patent/US7786585B2/en
Priority to US12/764,411 priority patent/US7977238B2/en
Priority to US13/098,648 priority patent/US8093723B2/en
Pending legal-status Critical Current

Links

JP2002181974A 2002-06-21 2002-06-21 半導体集積回路装置およびその製造方法 Pending JP2004031439A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2002181974A JP2004031439A (ja) 2002-06-21 2002-06-21 半導体集積回路装置およびその製造方法
US10/465,541 US7023091B2 (en) 2002-06-21 2003-06-20 Semiconductor integrated circuit device
US11/239,371 US7411301B2 (en) 2002-06-21 2005-09-30 Semiconductor integrated circuit device
US12/188,591 US7786585B2 (en) 2002-06-21 2008-08-08 Semiconductor integrated circuit device
US12/764,411 US7977238B2 (en) 2002-06-21 2010-04-21 Method of manufacturing a semiconductor integrated circuit device
US13/098,648 US8093723B2 (en) 2002-06-21 2011-05-02 Method of manufacturing a semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002181974A JP2004031439A (ja) 2002-06-21 2002-06-21 半導体集積回路装置およびその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007292929A Division JP2008053758A (ja) 2007-11-12 2007-11-12 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JP2004031439A JP2004031439A (ja) 2004-01-29
JP2004031439A5 true JP2004031439A5 (enExample) 2005-09-22

Family

ID=31178668

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002181974A Pending JP2004031439A (ja) 2002-06-21 2002-06-21 半導体集積回路装置およびその製造方法

Country Status (2)

Country Link
US (5) US7023091B2 (enExample)
JP (1) JP2004031439A (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3790469B2 (ja) * 2001-12-21 2006-06-28 富士通株式会社 半導体装置
JP2004031439A (ja) * 2002-06-21 2004-01-29 Renesas Technology Corp 半導体集積回路装置およびその製造方法
US7888672B2 (en) * 2002-11-23 2011-02-15 Infineon Technologies Ag Device for detecting stress migration properties
US7223684B2 (en) * 2004-07-14 2007-05-29 International Business Machines Corporation Dual damascene wiring and method
US9318378B2 (en) * 2004-08-21 2016-04-19 Globalfoundries Singapore Pte. Ltd. Slot designs in wide metal lines
JP2006190869A (ja) * 2005-01-07 2006-07-20 Nec Electronics Corp 半導体装置の設計方法および信頼性評価方法
JP2007234857A (ja) * 2006-03-01 2007-09-13 Matsushita Electric Ind Co Ltd 半導体集積回路および半導体集積回路の設計方法
JP4731456B2 (ja) 2006-12-19 2011-07-27 富士通セミコンダクター株式会社 半導体装置
JP2009295873A (ja) * 2008-06-06 2009-12-17 Panasonic Corp 半導体装置
JP4862017B2 (ja) * 2008-07-10 2012-01-25 ルネサスエレクトロニクス株式会社 中継基板、その製造方法、プローブカード
US8653648B2 (en) * 2008-10-03 2014-02-18 Taiwan Semiconductor Manufacturing Company, Ltd. Zigzag pattern for TSV copper adhesion
KR101085721B1 (ko) * 2009-02-10 2011-11-21 주식회사 하이닉스반도체 반도체 소자 및 그 제조방법
JP5502339B2 (ja) * 2009-02-17 2014-05-28 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
JP5434355B2 (ja) 2009-08-11 2014-03-05 富士通セミコンダクター株式会社 設計支援プログラム、設計支援装置、および設計支援方法
KR101712628B1 (ko) 2010-05-03 2017-03-06 삼성전자 주식회사 가변 콘택을 포함한 반도체 소자
JP5603768B2 (ja) * 2010-12-28 2014-10-08 株式会社東芝 半導体集積回路の配線方法、半導体回路配線装置および半導体集積回路
WO2012123829A1 (en) * 2011-03-16 2012-09-20 Koninklijke Philips Electronics N.V. Method and system for intelligent linking of medical data.
JP5554303B2 (ja) 2011-09-08 2014-07-23 株式会社東芝 半導体集積回路および半導体集積回路の設計方法
JP5802534B2 (ja) * 2011-12-06 2015-10-28 株式会社東芝 半導体装置
CN105097954B (zh) * 2014-05-23 2018-11-16 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制造方法和电子装置
JP6597215B2 (ja) * 2015-11-16 2019-10-30 富士電機株式会社 半導体装置の製造方法
JP7085417B2 (ja) * 2018-06-25 2022-06-16 ルネサスエレクトロニクス株式会社 半導体装置

Family Cites Families (17)

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Publication number Priority date Publication date Assignee Title
GB8316476D0 (en) * 1983-06-16 1983-07-20 Plessey Co Plc Producing layered structure
JPS6490544A (en) 1987-10-01 1989-04-07 Matsushita Electronics Corp Semiconductor integrated circuit
US5019877A (en) * 1989-08-31 1991-05-28 Mitsubishi Denki Kabushiki Kaisha Field effect transistor
JPH03145743A (ja) 1989-10-31 1991-06-20 Hitachi Ltd 半導体集積回路装置
US5625232A (en) * 1994-07-15 1997-04-29 Texas Instruments Incorporated Reliability of metal leads in high speed LSI semiconductors using dummy vias
JPH08316330A (ja) 1995-05-12 1996-11-29 Hitachi Ltd 半導体集積回路のレイアウト方法
JPH1174355A (ja) 1997-06-27 1999-03-16 Toshiba Corp 半導体装置の製造方法
US6731007B1 (en) * 1997-08-29 2004-05-04 Hitachi, Ltd. Semiconductor integrated circuit device with vertically stacked conductor interconnections
JP3415081B2 (ja) 1999-10-19 2003-06-09 沖電気工業株式会社 半導体装置及び半導体装置の製造方法
JP4258914B2 (ja) 1999-10-19 2009-04-30 富士通株式会社 半導体装置
JP2001337440A (ja) 2000-03-24 2001-12-07 Toshiba Corp 半導体集積回路のパターン設計方法、フォトマスク、および半導体装置
JP3819670B2 (ja) 2000-04-14 2006-09-13 富士通株式会社 ダマシン配線を有する半導体装置
JP2002124565A (ja) 2000-10-12 2002-04-26 Fujitsu Ltd 多層配線構造を有する半導体装置
JP2002164428A (ja) * 2000-11-29 2002-06-07 Hitachi Ltd 半導体装置およびその製造方法
JP2003303885A (ja) * 2002-04-08 2003-10-24 Mitsubishi Electric Corp 集積回路及びその設計方法
US20030218259A1 (en) * 2002-05-21 2003-11-27 Chesire Daniel Patrick Bond pad support structure for a semiconductor device
JP2004031439A (ja) * 2002-06-21 2004-01-29 Renesas Technology Corp 半導体集積回路装置およびその製造方法

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