JPS6490544A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS6490544A
JPS6490544A JP24864387A JP24864387A JPS6490544A JP S6490544 A JPS6490544 A JP S6490544A JP 24864387 A JP24864387 A JP 24864387A JP 24864387 A JP24864387 A JP 24864387A JP S6490544 A JPS6490544 A JP S6490544A
Authority
JP
Japan
Prior art keywords
holes
integrated circuit
semiconductor integrated
etching
conditions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24864387A
Other languages
Japanese (ja)
Inventor
Hiroshi Niwa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP24864387A priority Critical patent/JPS6490544A/en
Publication of JPS6490544A publication Critical patent/JPS6490544A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To control the conditions of etching of contact holes, and to improve yield by equalizing the shape and size of the contact holes on a semiconductor substrate. CONSTITUTION:An integrated circuit is composed of a metallic wiring layer 1, a polycrystalline silicon wiring layer 2, a contact hole 3 and a diffusion layer 4. The shape and size of the holes 3 are all equalized at that time. A large number of the holes 3 are formed where currents are concentrated such as a power wiring section. Accordingly, the conditions of etching of the holes 3 are controlled easily, thus improving yield.
JP24864387A 1987-10-01 1987-10-01 Semiconductor integrated circuit Pending JPS6490544A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24864387A JPS6490544A (en) 1987-10-01 1987-10-01 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24864387A JPS6490544A (en) 1987-10-01 1987-10-01 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS6490544A true JPS6490544A (en) 1989-04-07

Family

ID=17181168

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24864387A Pending JPS6490544A (en) 1987-10-01 1987-10-01 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS6490544A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006319307A (en) * 2005-05-11 2006-11-24 Samsung Sdi Co Ltd Semiconductor device and method for manufacturing same
US7411301B2 (en) 2002-06-21 2008-08-12 Renesas Technology Corp. Semiconductor integrated circuit device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59126652A (en) * 1983-01-10 1984-07-21 Nec Corp Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59126652A (en) * 1983-01-10 1984-07-21 Nec Corp Semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7411301B2 (en) 2002-06-21 2008-08-12 Renesas Technology Corp. Semiconductor integrated circuit device
US7786585B2 (en) 2002-06-21 2010-08-31 Renesas Electronics Corp. Semiconductor integrated circuit device
US7977238B2 (en) 2002-06-21 2011-07-12 Renesas Electronics Corporation Method of manufacturing a semiconductor integrated circuit device
US8093723B2 (en) 2002-06-21 2012-01-10 Renesas Electronics Corporation Method of manufacturing a semiconductor integrated circuit device
JP2006319307A (en) * 2005-05-11 2006-11-24 Samsung Sdi Co Ltd Semiconductor device and method for manufacturing same

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