JP2003332529A - 相変化媒体メモリデバイスのための、熱損失が小さく接触面積が小さい複合電極 - Google Patents
相変化媒体メモリデバイスのための、熱損失が小さく接触面積が小さい複合電極Info
- Publication number
- JP2003332529A JP2003332529A JP2003097798A JP2003097798A JP2003332529A JP 2003332529 A JP2003332529 A JP 2003332529A JP 2003097798 A JP2003097798 A JP 2003097798A JP 2003097798 A JP2003097798 A JP 2003097798A JP 2003332529 A JP2003332529 A JP 2003332529A
- Authority
- JP
- Japan
- Prior art keywords
- phase change
- electrode
- dielectric layer
- change medium
- small
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004020 conductor Substances 0.000 claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 239000002131 composite material Substances 0.000 claims description 60
- 238000000034 method Methods 0.000 description 52
- 239000000463 material Substances 0.000 description 37
- 239000012782 phase change material Substances 0.000 description 34
- 238000005530 etching Methods 0.000 description 24
- 238000010586 diagram Methods 0.000 description 22
- 210000004027 cell Anatomy 0.000 description 18
- 239000007789 gas Substances 0.000 description 14
- 210000000352 storage cell Anatomy 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 10
- 238000000151 deposition Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 239000005368 silicate glass Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 229910019142 PO4 Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000010452 phosphate Substances 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910000618 GeSbTe Inorganic materials 0.000 description 1
- GVGLGOZIDCSQPN-PVHGPHFFSA-N Heroin Chemical compound O([C@H]1[C@H](C=C[C@H]23)OC(C)=O)C4=C5[C@@]12CCN(C)[C@@H]3CC5=CC=C4OC(C)=O GVGLGOZIDCSQPN-PVHGPHFFSA-N 0.000 description 1
- 241000502522 Luscinia megarhynchos Species 0.000 description 1
- 241000555745 Sciuridae Species 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- FYUZFGQCEXHZQV-UHFFFAOYSA-N triethoxy(hydroxy)silane Chemical compound CCO[Si](O)(OCC)OCC FYUZFGQCEXHZQV-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
- H10N70/8418—Electrodes adapted for focusing electric field or current, e.g. tip-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/116,507 US6670628B2 (en) | 2002-04-04 | 2002-04-04 | Low heat loss and small contact area composite electrode for a phase change media memory device |
| US10/116507 | 2002-04-04 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003332529A true JP2003332529A (ja) | 2003-11-21 |
| JP2003332529A5 JP2003332529A5 (https=) | 2005-04-28 |
Family
ID=28673997
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003097798A Withdrawn JP2003332529A (ja) | 2002-04-04 | 2003-04-01 | 相変化媒体メモリデバイスのための、熱損失が小さく接触面積が小さい複合電極 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US6670628B2 (https=) |
| EP (1) | EP1355365A3 (https=) |
| JP (1) | JP2003332529A (https=) |
| CN (1) | CN100380700C (https=) |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006165560A (ja) * | 2004-12-06 | 2006-06-22 | Samsung Electronics Co Ltd | 相変化記憶セル及びその製造方法 |
| JP2006203178A (ja) * | 2005-01-19 | 2006-08-03 | Sharp Corp | 不揮発性メモリ抵抗体セル及びその製造方法 |
| JP2007073779A (ja) * | 2005-09-07 | 2007-03-22 | Elpida Memory Inc | 不揮発性メモリ素子及びその製造方法 |
| KR100713809B1 (ko) | 2006-02-21 | 2007-05-02 | 삼성전자주식회사 | 상변화 기억 소자 및 그 형성 방법 |
| JP2008103727A (ja) * | 2006-10-18 | 2008-05-01 | Samsung Electronics Co Ltd | 下部電極コンタクト層と相変化層とが広い接触面積を持つ相変化メモリ素子及びその製造方法 |
| US7368802B2 (en) | 2005-11-26 | 2008-05-06 | Elpida Memory, Inc. | Phase-change memory device and method of manufacturing same |
| JP2009505424A (ja) * | 2005-08-15 | 2009-02-05 | マイクロン テクノロジー， インク． | 再生可能可変抵抗絶縁メモリ装置およびその形成方法 |
| US7498601B2 (en) | 2005-11-26 | 2009-03-03 | Elpida Memory, Inc. | Phase-change memory device and method of manufacturing same |
| JP2009212202A (ja) * | 2008-03-03 | 2009-09-17 | Elpida Memory Inc | 相変化メモリ装置およびその製造方法 |
| JP2009218259A (ja) * | 2008-03-07 | 2009-09-24 | Toshiba Corp | 不揮発性記憶装置及びその製造方法 |
| JP2009246309A (ja) * | 2008-03-31 | 2009-10-22 | Toshiba Corp | 不揮発性記憶装置及びその製造方法 |
| KR100956773B1 (ko) | 2007-12-26 | 2010-05-12 | 주식회사 하이닉스반도체 | 상변화 메모리 소자 및 그 제조 방법 |
| US7728321B2 (en) | 2005-09-12 | 2010-06-01 | Elipida Memory Inc. | Phase change memory device and method of manufacturing the device |
| US7755075B2 (en) | 2006-02-25 | 2010-07-13 | Elpida Memory, Inc. | Phase-change memory device with minimized reduction in thermal efficiency and method of manufacturing the same |
| US7777214B2 (en) | 2008-01-25 | 2010-08-17 | Samsung Electronics Co., Ltd. | Phase change memory device with a novel electrode |
| JP2014120606A (ja) * | 2012-12-17 | 2014-06-30 | Hitachi Ltd | 不揮発性記憶装置 |
| JP2024507644A (ja) * | 2021-03-01 | 2024-02-21 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 二層配列に基づく電気メモリスタデバイス |
Families Citing this family (137)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7260051B1 (en) | 1998-12-18 | 2007-08-21 | Nanochip, Inc. | Molecular memory medium and molecular memory integrated circuit |
| US20020138301A1 (en) * | 2001-03-22 | 2002-09-26 | Thanos Karras | Integration of a portal into an application service provider data archive and/or web based viewer |
| US7035987B2 (en) * | 2002-07-02 | 2006-04-25 | Intel Corporation | Managing storage in processor-based systems |
| TWI233204B (en) * | 2002-07-26 | 2005-05-21 | Infineon Technologies Ag | Nonvolatile memory element and associated production methods and memory element arrangements |
| US7233517B2 (en) | 2002-10-15 | 2007-06-19 | Nanochip, Inc. | Atomic probes and media for high density data storage |
| US6985377B2 (en) | 2002-10-15 | 2006-01-10 | Nanochip, Inc. | Phase change media for high density data storage |
| US6982898B2 (en) | 2002-10-15 | 2006-01-03 | Nanochip, Inc. | Molecular memory integrated circuit utilizing non-vibrating cantilevers |
| US7425735B2 (en) * | 2003-02-24 | 2008-09-16 | Samsung Electronics Co., Ltd. | Multi-layer phase-changeable memory devices |
| US7115927B2 (en) | 2003-02-24 | 2006-10-03 | Samsung Electronics Co., Ltd. | Phase changeable memory devices |
| US7211819B2 (en) * | 2003-08-04 | 2007-05-01 | Intel Corporation | Damascene phase change memory |
| KR100568109B1 (ko) * | 2003-11-24 | 2006-04-05 | 삼성전자주식회사 | 상변화 기억 소자 및 그 형성 방법 |
| DE10356285A1 (de) * | 2003-11-28 | 2005-06-30 | Infineon Technologies Ag | Integrierter Halbleiterspeicher und Verfahren zum Herstellen eines integrierten Halbleiterspeichers |
| US7943919B2 (en) * | 2003-12-10 | 2011-05-17 | International Business Machines Corporation | Integrated circuit with upstanding stylus |
| CN100508235C (zh) * | 2004-01-09 | 2009-07-01 | 中国科学院上海微系统与信息技术研究所 | 相变存储器单元器件的制备方法 |
| DE102004007633B4 (de) * | 2004-02-17 | 2010-10-14 | Qimonda Ag | Speicherzelle, Halbleiter-Speicherbauelement und Verfahren zur Herstellung einer Speicherzelle |
| US7379412B2 (en) | 2004-04-16 | 2008-05-27 | Nanochip, Inc. | Methods for writing and reading highly resolved domains for high density data storage |
| US7301887B2 (en) | 2004-04-16 | 2007-11-27 | Nanochip, Inc. | Methods for erasing bit cells in a high density data storage device |
| US20050232061A1 (en) | 2004-04-16 | 2005-10-20 | Rust Thomas F | Systems for writing and reading highly resolved domains for high density data storage |
| DE102004019862A1 (de) * | 2004-04-23 | 2005-11-17 | Infineon Technologies Ag | Sublithographische Kontaktstruktur in einem Halbleiterbauelement |
| US7791141B2 (en) * | 2004-07-09 | 2010-09-07 | International Business Machines Corporation | Field-enhanced programmable resistance memory cell |
| US7023008B1 (en) * | 2004-09-30 | 2006-04-04 | Infineon Technologies Ag | Resistive memory element |
| US7338857B2 (en) * | 2004-10-14 | 2008-03-04 | Ovonyx, Inc. | Increasing adherence of dielectrics to phase change materials |
| US7365355B2 (en) * | 2004-11-08 | 2008-04-29 | Ovonyx, Inc. | Programmable matrix array with phase-change material |
| US7608503B2 (en) * | 2004-11-22 | 2009-10-27 | Macronix International Co., Ltd. | Side wall active pin memory and manufacturing method |
| US7374174B2 (en) | 2004-12-22 | 2008-05-20 | Micron Technology, Inc. | Small electrode for resistance variable devices |
| JP4428228B2 (ja) * | 2004-12-24 | 2010-03-10 | エルピーダメモリ株式会社 | 半導体装置 |
| TWI261915B (en) * | 2005-01-07 | 2006-09-11 | Ind Tech Res Inst | Phase change memory and fabricating method thereof |
| DE102005014645B4 (de) * | 2005-03-31 | 2007-07-26 | Infineon Technologies Ag | Anschlusselektrode für Phasen-Wechsel-Material, zugehöriges Phasen-Wechsel-Speicherelement sowie zugehöriges Herstellungsverfahren |
| JP2006324501A (ja) * | 2005-05-19 | 2006-11-30 | Toshiba Corp | 相変化メモリおよびその製造方法 |
| US7238994B2 (en) | 2005-06-17 | 2007-07-03 | Macronix International Co., Ltd. | Thin film plate phase change ram circuit and manufacturing method |
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| KR100637235B1 (ko) * | 2005-08-26 | 2006-10-20 | 삼성에스디아이 주식회사 | 플라즈마 디스플레이 패널 |
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| US8003972B2 (en) * | 2006-08-30 | 2011-08-23 | Micron Technology, Inc. | Bottom electrode geometry for phase change memory |
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| US7795607B2 (en) * | 2006-09-29 | 2010-09-14 | Intel Corporation | Current focusing memory architecture for use in electrical probe-based memory storage |
| US8766224B2 (en) * | 2006-10-03 | 2014-07-01 | Hewlett-Packard Development Company, L.P. | Electrically actuated switch |
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- 2003-04-04 CN CNB031102026A patent/CN100380700C/zh not_active Expired - Fee Related
- 2003-08-08 US US10/637,941 patent/US6746892B2/en not_active Expired - Fee Related
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Also Published As
| Publication number | Publication date |
|---|---|
| US6746892B2 (en) | 2004-06-08 |
| US20040077123A1 (en) | 2004-04-22 |
| US6670628B2 (en) | 2003-12-30 |
| CN100380700C (zh) | 2008-04-09 |
| EP1355365A3 (en) | 2005-04-20 |
| EP1355365A2 (en) | 2003-10-22 |
| CN1449062A (zh) | 2003-10-15 |
| US20030189200A1 (en) | 2003-10-09 |
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