JP2003166047A - ハロゲン化合物の成膜方法及び成膜装置、並びにフッ化マグネシウム膜 - Google Patents

ハロゲン化合物の成膜方法及び成膜装置、並びにフッ化マグネシウム膜

Info

Publication number
JP2003166047A
JP2003166047A JP2002080873A JP2002080873A JP2003166047A JP 2003166047 A JP2003166047 A JP 2003166047A JP 2002080873 A JP2002080873 A JP 2002080873A JP 2002080873 A JP2002080873 A JP 2002080873A JP 2003166047 A JP2003166047 A JP 2003166047A
Authority
JP
Japan
Prior art keywords
film
bias
halogen compound
substrate
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002080873A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003166047A5 (enExample
Inventor
Takanobu Hori
崇展 堀
Hiroshi Kajiyama
博司 梶山
Akira Kato
加藤　　明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Shinmaywa Industries Ltd
Original Assignee
Hitachi Ltd
Shin Meiva Industry Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Shin Meiva Industry Ltd filed Critical Hitachi Ltd
Priority to JP2002080873A priority Critical patent/JP2003166047A/ja
Priority to TW091120844A priority patent/TWI276695B/zh
Priority to KR10-2002-0057429A priority patent/KR100498278B1/ko
Priority to US10/247,081 priority patent/US20030068531A1/en
Priority to CNB021514518A priority patent/CN1284879C/zh
Publication of JP2003166047A publication Critical patent/JP2003166047A/ja
Priority to US10/858,178 priority patent/US7223449B2/en
Publication of JP2003166047A5 publication Critical patent/JP2003166047A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0694—Halides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G02B1/113—Anti-reflection coatings using inorganic layer materials only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Surface Treatment Of Optical Elements (AREA)
JP2002080873A 2001-09-20 2002-03-22 ハロゲン化合物の成膜方法及び成膜装置、並びにフッ化マグネシウム膜 Pending JP2003166047A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2002080873A JP2003166047A (ja) 2001-09-20 2002-03-22 ハロゲン化合物の成膜方法及び成膜装置、並びにフッ化マグネシウム膜
TW091120844A TWI276695B (en) 2001-09-20 2002-09-12 Method and apparatus for forming film of halogen compound, and magnesium fluoride film
KR10-2002-0057429A KR100498278B1 (ko) 2001-09-20 2002-09-19 할로겐 화합물의 막형성 방법, 막형성 장치, 및불화마그네슘 막
US10/247,081 US20030068531A1 (en) 2001-09-20 2002-09-19 Film deposition method and film deposition system for depositing a halogen compound film, and magnesium fluoride film
CNB021514518A CN1284879C (zh) 2001-09-20 2002-09-20 通过等离子而被离子化的氟化合物的成膜方法及成膜装置
US10/858,178 US7223449B2 (en) 2001-09-20 2004-06-01 Film deposition method

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001-287114 2001-09-20
JP2001287114 2001-09-20
JP2002080873A JP2003166047A (ja) 2001-09-20 2002-03-22 ハロゲン化合物の成膜方法及び成膜装置、並びにフッ化マグネシウム膜

Publications (2)

Publication Number Publication Date
JP2003166047A true JP2003166047A (ja) 2003-06-13
JP2003166047A5 JP2003166047A5 (enExample) 2005-06-09

Family

ID=26622600

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002080873A Pending JP2003166047A (ja) 2001-09-20 2002-03-22 ハロゲン化合物の成膜方法及び成膜装置、並びにフッ化マグネシウム膜

Country Status (5)

Country Link
US (2) US20030068531A1 (enExample)
JP (1) JP2003166047A (enExample)
KR (1) KR100498278B1 (enExample)
CN (1) CN1284879C (enExample)
TW (1) TWI276695B (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007270336A (ja) * 2006-03-31 2007-10-18 Showa Shinku:Kk 成膜装置及び成膜方法
JP2011021214A (ja) * 2009-07-14 2011-02-03 Toppan Printing Co Ltd 成膜装置およびガスバリア性積層体ならびに光学部材
JP2012518722A (ja) * 2009-02-19 2012-08-16 富士フイルム株式会社 インピーダンス整合回路網による物理的蒸着
KR20190141091A (ko) * 2018-06-13 2019-12-23 도쿄엘렉트론가부시키가이샤 성막 장치

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JP3981281B2 (ja) * 2002-02-14 2007-09-26 松下電器産業株式会社 半導体集積回路の設計方法及びテスト方法
USH2212H1 (en) * 2003-09-26 2008-04-01 The United States Of America As Represented By The Secretary Of The Navy Method and apparatus for producing an ion-ion plasma continuous in time
US7615132B2 (en) * 2003-10-17 2009-11-10 Hitachi High-Technologies Corporation Plasma processing apparatus having high frequency power source with sag compensation function and plasma processing method
KR100674532B1 (ko) * 2005-02-28 2007-01-29 한국과학기술연구원 고분자 위에 접착력이 강한 금속 박막을 형성하기 위한 방법 및 장치
US7842355B2 (en) * 2005-11-01 2010-11-30 Applied Materials, Inc. System and method for modulation of power and power related functions of PECVD discharge sources to achieve new film properties
EP2526566B1 (en) * 2010-01-21 2018-03-07 Roper Scientific, Inc. Solid state back-illuminated photon sensor and its method of fabrication
JP5843491B2 (ja) * 2010-06-24 2016-01-13 キヤノン株式会社 塗布液、光学部品の製造方法および撮影光学系
US8760054B2 (en) * 2011-01-21 2014-06-24 Axcelis Technologies Inc. Microwave plasma electron flood
US9957618B2 (en) * 2012-02-28 2018-05-01 Massachusetts Institute Of Technology Single-unit reactor design for combined oxidative, initiated, and plasma-enhanced chemical vapor deposition
TWI700967B (zh) * 2019-07-09 2020-08-01 日商住友重機械工業股份有限公司 負離子生成裝置
CN113604788B (zh) * 2021-07-27 2022-10-21 北京北方华创微电子装备有限公司 基座偏压调节装置和方法、半导体工艺设备

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JPS63106623A (ja) * 1986-10-23 1988-05-11 Fujitsu Ltd 液晶表示素子
JPH04224136A (ja) * 1990-12-26 1992-08-13 Matsunami Glass Kogyo Kk プラズマ放電処理を施したガラス材
US5756222A (en) * 1994-08-15 1998-05-26 Applied Materials, Inc. Corrosion-resistant aluminum article for semiconductor processing equipment
JP3585276B2 (ja) * 1994-12-01 2004-11-04 オリンパス株式会社 光学薄膜の製造方法およびこの光学薄膜を有する基板
JP3808917B2 (ja) * 1995-07-20 2006-08-16 オリンパス株式会社 薄膜の製造方法及び薄膜
JPH09243802A (ja) 1996-03-14 1997-09-19 Olympus Optical Co Ltd 光学薄膜の成膜方法および成膜装置
JPH09324262A (ja) * 1996-06-06 1997-12-16 Nikon Corp フッ化物薄膜の製造方法及びフッ化物薄膜
AU5354698A (en) * 1996-11-01 1998-05-29 Lawrence Berkeley Laboratory Low-resistivity photon-transparent window attached to photo-sensitive silicon detector
JP3987169B2 (ja) * 1997-10-02 2007-10-03 オリンパス株式会社 光学薄膜の製造方法
TW477009B (en) * 1999-05-26 2002-02-21 Tadahiro Ohmi Plasma process device
JP2001140067A (ja) * 1999-11-17 2001-05-22 Canon Inc 光学薄膜の成膜方法および成膜装置
JP4334723B2 (ja) * 2000-03-21 2009-09-30 新明和工業株式会社 イオンプレーティング成膜装置、及びイオンプレーティング成膜方法。
JP3840058B2 (ja) * 2000-04-07 2006-11-01 キヤノン株式会社 マイクロレンズ、固体撮像装置及びそれらの製造方法
US6677549B2 (en) * 2000-07-24 2004-01-13 Canon Kabushiki Kaisha Plasma processing apparatus having permeable window covered with light shielding film
US6875700B2 (en) * 2000-08-29 2005-04-05 Board Of Regents, The University Of Texas System Ion-Ion plasma processing with bias modulation synchronized to time-modulated discharges
JP4204824B2 (ja) * 2001-09-20 2009-01-07 新明和工業株式会社 光学系

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007270336A (ja) * 2006-03-31 2007-10-18 Showa Shinku:Kk 成膜装置及び成膜方法
JP2012518722A (ja) * 2009-02-19 2012-08-16 富士フイルム株式会社 インピーダンス整合回路網による物理的蒸着
JP2011021214A (ja) * 2009-07-14 2011-02-03 Toppan Printing Co Ltd 成膜装置およびガスバリア性積層体ならびに光学部材
KR20190141091A (ko) * 2018-06-13 2019-12-23 도쿄엘렉트론가부시키가이샤 성막 장치
KR20200144531A (ko) * 2018-06-13 2020-12-29 도쿄엘렉트론가부시키가이샤 성막 방법
KR102202347B1 (ko) * 2018-06-13 2021-01-12 도쿄엘렉트론가부시키가이샤 성막 장치
KR102244353B1 (ko) * 2018-06-13 2021-04-23 도쿄엘렉트론가부시키가이샤 성막 방법
US12027344B2 (en) 2018-06-13 2024-07-02 Tokyo Electron Limited Film forming apparatus

Also Published As

Publication number Publication date
US20040226509A1 (en) 2004-11-18
KR20030025886A (ko) 2003-03-29
TWI276695B (en) 2007-03-21
KR100498278B1 (ko) 2005-07-01
US7223449B2 (en) 2007-05-29
CN1410588A (zh) 2003-04-16
US20030068531A1 (en) 2003-04-10
CN1284879C (zh) 2006-11-15

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