TWI276695B - Method and apparatus for forming film of halogen compound, and magnesium fluoride film - Google Patents
Method and apparatus for forming film of halogen compound, and magnesium fluoride film Download PDFInfo
- Publication number
- TWI276695B TWI276695B TW091120844A TW91120844A TWI276695B TW I276695 B TWI276695 B TW I276695B TW 091120844 A TW091120844 A TW 091120844A TW 91120844 A TW91120844 A TW 91120844A TW I276695 B TWI276695 B TW I276695B
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- substrate
- halogen compound
- bias
- voltage
- Prior art date
Links
- 150000002366 halogen compounds Chemical class 0.000 title claims abstract description 85
- 238000000034 method Methods 0.000 title claims abstract description 27
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 title claims description 52
- 229910001635 magnesium fluoride Inorganic materials 0.000 title claims description 49
- 239000000758 substrate Substances 0.000 claims abstract description 189
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 59
- 150000002500 ions Chemical class 0.000 claims abstract description 57
- 239000000463 material Substances 0.000 claims abstract description 56
- 150000002367 halogens Chemical class 0.000 claims abstract description 53
- 238000001704 evaporation Methods 0.000 claims abstract description 47
- 230000008020 evaporation Effects 0.000 claims abstract description 37
- 230000007246 mechanism Effects 0.000 claims description 15
- 238000005566 electron beam evaporation Methods 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 8
- 238000010894 electron beam technology Methods 0.000 claims description 8
- 239000012528 membrane Substances 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 6
- 230000000903 blocking effect Effects 0.000 claims description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 2
- 229910052707 ruthenium Inorganic materials 0.000 claims 2
- 239000000126 substance Substances 0.000 claims 1
- 238000000151 deposition Methods 0.000 abstract description 12
- -1 halogen ions Chemical class 0.000 abstract description 12
- 230000008021 deposition Effects 0.000 abstract description 8
- 230000007812 deficiency Effects 0.000 abstract description 6
- 230000008569 process Effects 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 210
- 238000010521 absorption reaction Methods 0.000 description 20
- 230000015572 biosynthetic process Effects 0.000 description 17
- 229910052731 fluorine Inorganic materials 0.000 description 13
- 239000011737 fluorine Substances 0.000 description 13
- 239000003990 capacitor Substances 0.000 description 12
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 11
- 239000007789 gas Substances 0.000 description 9
- 238000005299 abrasion Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 230000002950 deficient Effects 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000010494 dissociation reaction Methods 0.000 description 3
- 230000005593 dissociations Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 238000002835 absorbance Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000012788 optical film Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000003405 preventing effect Effects 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 210000002268 wool Anatomy 0.000 description 2
- 208000032544 Cicatrix Diseases 0.000 description 1
- JLVVSXFLKOJNIY-UHFFFAOYSA-N Magnesium ion Chemical compound [Mg+2] JLVVSXFLKOJNIY-UHFFFAOYSA-N 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229940125797 compound 12 Drugs 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910001425 magnesium ion Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 231100000241 scar Toxicity 0.000 description 1
- 230000037387 scars Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0694—Halides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/113—Anti-reflection coatings using inorganic layer materials only
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Inorganic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Surface Treatment Of Optical Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001287114 | 2001-09-20 | ||
| JP2002080873A JP2003166047A (ja) | 2001-09-20 | 2002-03-22 | ハロゲン化合物の成膜方法及び成膜装置、並びにフッ化マグネシウム膜 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TWI276695B true TWI276695B (en) | 2007-03-21 |
Family
ID=26622600
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091120844A TWI276695B (en) | 2001-09-20 | 2002-09-12 | Method and apparatus for forming film of halogen compound, and magnesium fluoride film |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US20030068531A1 (enExample) |
| JP (1) | JP2003166047A (enExample) |
| KR (1) | KR100498278B1 (enExample) |
| CN (1) | CN1284879C (enExample) |
| TW (1) | TWI276695B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI700967B (zh) * | 2019-07-09 | 2020-08-01 | 日商住友重機械工業股份有限公司 | 負離子生成裝置 |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3981281B2 (ja) * | 2002-02-14 | 2007-09-26 | 松下電器産業株式会社 | 半導体集積回路の設計方法及びテスト方法 |
| USH2212H1 (en) * | 2003-09-26 | 2008-04-01 | The United States Of America As Represented By The Secretary Of The Navy | Method and apparatus for producing an ion-ion plasma continuous in time |
| US7615132B2 (en) * | 2003-10-17 | 2009-11-10 | Hitachi High-Technologies Corporation | Plasma processing apparatus having high frequency power source with sag compensation function and plasma processing method |
| KR100674532B1 (ko) * | 2005-02-28 | 2007-01-29 | 한국과학기술연구원 | 고분자 위에 접착력이 강한 금속 박막을 형성하기 위한 방법 및 장치 |
| US7842355B2 (en) * | 2005-11-01 | 2010-11-30 | Applied Materials, Inc. | System and method for modulation of power and power related functions of PECVD discharge sources to achieve new film properties |
| JP4757689B2 (ja) * | 2006-03-31 | 2011-08-24 | 株式会社昭和真空 | 成膜装置及び成膜方法 |
| US8540851B2 (en) * | 2009-02-19 | 2013-09-24 | Fujifilm Corporation | Physical vapor deposition with impedance matching network |
| JP5504720B2 (ja) * | 2009-07-14 | 2014-05-28 | 凸版印刷株式会社 | 成膜装置 |
| EP2526566B1 (en) * | 2010-01-21 | 2018-03-07 | Roper Scientific, Inc. | Solid state back-illuminated photon sensor and its method of fabrication |
| JP5843491B2 (ja) * | 2010-06-24 | 2016-01-13 | キヤノン株式会社 | 塗布液、光学部品の製造方法および撮影光学系 |
| US8760054B2 (en) * | 2011-01-21 | 2014-06-24 | Axcelis Technologies Inc. | Microwave plasma electron flood |
| US9957618B2 (en) * | 2012-02-28 | 2018-05-01 | Massachusetts Institute Of Technology | Single-unit reactor design for combined oxidative, initiated, and plasma-enhanced chemical vapor deposition |
| JP7094154B2 (ja) * | 2018-06-13 | 2022-07-01 | 東京エレクトロン株式会社 | 成膜装置および成膜方法 |
| CN113604788B (zh) * | 2021-07-27 | 2022-10-21 | 北京北方华创微电子装备有限公司 | 基座偏压调节装置和方法、半导体工艺设备 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63106623A (ja) * | 1986-10-23 | 1988-05-11 | Fujitsu Ltd | 液晶表示素子 |
| JPH04224136A (ja) * | 1990-12-26 | 1992-08-13 | Matsunami Glass Kogyo Kk | プラズマ放電処理を施したガラス材 |
| US5756222A (en) * | 1994-08-15 | 1998-05-26 | Applied Materials, Inc. | Corrosion-resistant aluminum article for semiconductor processing equipment |
| JP3585276B2 (ja) * | 1994-12-01 | 2004-11-04 | オリンパス株式会社 | 光学薄膜の製造方法およびこの光学薄膜を有する基板 |
| JP3808917B2 (ja) * | 1995-07-20 | 2006-08-16 | オリンパス株式会社 | 薄膜の製造方法及び薄膜 |
| JPH09243802A (ja) | 1996-03-14 | 1997-09-19 | Olympus Optical Co Ltd | 光学薄膜の成膜方法および成膜装置 |
| JPH09324262A (ja) * | 1996-06-06 | 1997-12-16 | Nikon Corp | フッ化物薄膜の製造方法及びフッ化物薄膜 |
| AU5354698A (en) * | 1996-11-01 | 1998-05-29 | Lawrence Berkeley Laboratory | Low-resistivity photon-transparent window attached to photo-sensitive silicon detector |
| JP3987169B2 (ja) * | 1997-10-02 | 2007-10-03 | オリンパス株式会社 | 光学薄膜の製造方法 |
| TW477009B (en) * | 1999-05-26 | 2002-02-21 | Tadahiro Ohmi | Plasma process device |
| JP2001140067A (ja) * | 1999-11-17 | 2001-05-22 | Canon Inc | 光学薄膜の成膜方法および成膜装置 |
| JP4334723B2 (ja) * | 2000-03-21 | 2009-09-30 | 新明和工業株式会社 | イオンプレーティング成膜装置、及びイオンプレーティング成膜方法。 |
| JP3840058B2 (ja) * | 2000-04-07 | 2006-11-01 | キヤノン株式会社 | マイクロレンズ、固体撮像装置及びそれらの製造方法 |
| US6677549B2 (en) * | 2000-07-24 | 2004-01-13 | Canon Kabushiki Kaisha | Plasma processing apparatus having permeable window covered with light shielding film |
| US6875700B2 (en) * | 2000-08-29 | 2005-04-05 | Board Of Regents, The University Of Texas System | Ion-Ion plasma processing with bias modulation synchronized to time-modulated discharges |
| JP4204824B2 (ja) * | 2001-09-20 | 2009-01-07 | 新明和工業株式会社 | 光学系 |
-
2002
- 2002-03-22 JP JP2002080873A patent/JP2003166047A/ja active Pending
- 2002-09-12 TW TW091120844A patent/TWI276695B/zh not_active IP Right Cessation
- 2002-09-19 US US10/247,081 patent/US20030068531A1/en not_active Abandoned
- 2002-09-19 KR KR10-2002-0057429A patent/KR100498278B1/ko not_active Expired - Fee Related
- 2002-09-20 CN CNB021514518A patent/CN1284879C/zh not_active Expired - Fee Related
-
2004
- 2004-06-01 US US10/858,178 patent/US7223449B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI700967B (zh) * | 2019-07-09 | 2020-08-01 | 日商住友重機械工業股份有限公司 | 負離子生成裝置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20040226509A1 (en) | 2004-11-18 |
| KR20030025886A (ko) | 2003-03-29 |
| KR100498278B1 (ko) | 2005-07-01 |
| US7223449B2 (en) | 2007-05-29 |
| CN1410588A (zh) | 2003-04-16 |
| JP2003166047A (ja) | 2003-06-13 |
| US20030068531A1 (en) | 2003-04-10 |
| CN1284879C (zh) | 2006-11-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |