KR100498278B1 - 할로겐 화합물의 막형성 방법, 막형성 장치, 및불화마그네슘 막 - Google Patents

할로겐 화합물의 막형성 방법, 막형성 장치, 및불화마그네슘 막 Download PDF

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KR100498278B1
KR100498278B1 KR10-2002-0057429A KR20020057429A KR100498278B1 KR 100498278 B1 KR100498278 B1 KR 100498278B1 KR 20020057429 A KR20020057429 A KR 20020057429A KR 100498278 B1 KR100498278 B1 KR 100498278B1
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South Korea
Prior art keywords
bias
film
substrate
halogen compound
power supply
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Expired - Fee Related
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KR10-2002-0057429A
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English (en)
Korean (ko)
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KR20030025886A (ko
Inventor
호리타카노부
카지야마히로시
카토아키라
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가부시끼가이샤 히다치 세이사꾸쇼
신메이와 인더스트리즈,리미티드
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0694—Halides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G02B1/113—Anti-reflection coatings using inorganic layer materials only

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Surface Treatment Of Optical Elements (AREA)
KR10-2002-0057429A 2001-09-20 2002-09-19 할로겐 화합물의 막형성 방법, 막형성 장치, 및불화마그네슘 막 Expired - Fee Related KR100498278B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2001-00287114 2001-09-20
JP2001287114 2001-09-20
JPJP-P-2002-00080873 2002-03-22
JP2002080873A JP2003166047A (ja) 2001-09-20 2002-03-22 ハロゲン化合物の成膜方法及び成膜装置、並びにフッ化マグネシウム膜

Publications (2)

Publication Number Publication Date
KR20030025886A KR20030025886A (ko) 2003-03-29
KR100498278B1 true KR100498278B1 (ko) 2005-07-01

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KR10-2002-0057429A Expired - Fee Related KR100498278B1 (ko) 2001-09-20 2002-09-19 할로겐 화합물의 막형성 방법, 막형성 장치, 및불화마그네슘 막

Country Status (5)

Country Link
US (2) US20030068531A1 (enExample)
JP (1) JP2003166047A (enExample)
KR (1) KR100498278B1 (enExample)
CN (1) CN1284879C (enExample)
TW (1) TWI276695B (enExample)

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JP3981281B2 (ja) * 2002-02-14 2007-09-26 松下電器産業株式会社 半導体集積回路の設計方法及びテスト方法
USH2212H1 (en) * 2003-09-26 2008-04-01 The United States Of America As Represented By The Secretary Of The Navy Method and apparatus for producing an ion-ion plasma continuous in time
US7615132B2 (en) * 2003-10-17 2009-11-10 Hitachi High-Technologies Corporation Plasma processing apparatus having high frequency power source with sag compensation function and plasma processing method
KR100674532B1 (ko) * 2005-02-28 2007-01-29 한국과학기술연구원 고분자 위에 접착력이 강한 금속 박막을 형성하기 위한 방법 및 장치
US7842355B2 (en) * 2005-11-01 2010-11-30 Applied Materials, Inc. System and method for modulation of power and power related functions of PECVD discharge sources to achieve new film properties
JP4757689B2 (ja) * 2006-03-31 2011-08-24 株式会社昭和真空 成膜装置及び成膜方法
US8540851B2 (en) * 2009-02-19 2013-09-24 Fujifilm Corporation Physical vapor deposition with impedance matching network
JP5504720B2 (ja) * 2009-07-14 2014-05-28 凸版印刷株式会社 成膜装置
EP2526566B1 (en) * 2010-01-21 2018-03-07 Roper Scientific, Inc. Solid state back-illuminated photon sensor and its method of fabrication
JP5843491B2 (ja) * 2010-06-24 2016-01-13 キヤノン株式会社 塗布液、光学部品の製造方法および撮影光学系
US8760054B2 (en) * 2011-01-21 2014-06-24 Axcelis Technologies Inc. Microwave plasma electron flood
US9957618B2 (en) * 2012-02-28 2018-05-01 Massachusetts Institute Of Technology Single-unit reactor design for combined oxidative, initiated, and plasma-enhanced chemical vapor deposition
JP7094154B2 (ja) * 2018-06-13 2022-07-01 東京エレクトロン株式会社 成膜装置および成膜方法
TWI700967B (zh) * 2019-07-09 2020-08-01 日商住友重機械工業股份有限公司 負離子生成裝置
CN113604788B (zh) * 2021-07-27 2022-10-21 北京北方华创微电子装备有限公司 基座偏压调节装置和方法、半导体工艺设备

Citations (4)

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JPH0931638A (ja) * 1995-07-20 1997-02-04 Olympus Optical Co Ltd 薄膜の製造方法および薄膜
JPH09324262A (ja) * 1996-06-06 1997-12-16 Nikon Corp フッ化物薄膜の製造方法及びフッ化物薄膜
JPH11106899A (ja) * 1997-10-02 1999-04-20 Olympus Optical Co Ltd 光学薄膜の製造方法
KR20010092395A (ko) * 2000-03-21 2001-10-24 추후제출 이온 도금 장치 및 이온 도금 방법

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JPS63106623A (ja) * 1986-10-23 1988-05-11 Fujitsu Ltd 液晶表示素子
JPH04224136A (ja) * 1990-12-26 1992-08-13 Matsunami Glass Kogyo Kk プラズマ放電処理を施したガラス材
US5756222A (en) * 1994-08-15 1998-05-26 Applied Materials, Inc. Corrosion-resistant aluminum article for semiconductor processing equipment
JP3585276B2 (ja) * 1994-12-01 2004-11-04 オリンパス株式会社 光学薄膜の製造方法およびこの光学薄膜を有する基板
JPH09243802A (ja) 1996-03-14 1997-09-19 Olympus Optical Co Ltd 光学薄膜の成膜方法および成膜装置
AU5354698A (en) * 1996-11-01 1998-05-29 Lawrence Berkeley Laboratory Low-resistivity photon-transparent window attached to photo-sensitive silicon detector
TW477009B (en) * 1999-05-26 2002-02-21 Tadahiro Ohmi Plasma process device
JP2001140067A (ja) * 1999-11-17 2001-05-22 Canon Inc 光学薄膜の成膜方法および成膜装置
JP3840058B2 (ja) * 2000-04-07 2006-11-01 キヤノン株式会社 マイクロレンズ、固体撮像装置及びそれらの製造方法
US6677549B2 (en) * 2000-07-24 2004-01-13 Canon Kabushiki Kaisha Plasma processing apparatus having permeable window covered with light shielding film
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Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
JPH0931638A (ja) * 1995-07-20 1997-02-04 Olympus Optical Co Ltd 薄膜の製造方法および薄膜
JPH09324262A (ja) * 1996-06-06 1997-12-16 Nikon Corp フッ化物薄膜の製造方法及びフッ化物薄膜
JPH11106899A (ja) * 1997-10-02 1999-04-20 Olympus Optical Co Ltd 光学薄膜の製造方法
KR20010092395A (ko) * 2000-03-21 2001-10-24 추후제출 이온 도금 장치 및 이온 도금 방법

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Publication number Publication date
US20040226509A1 (en) 2004-11-18
KR20030025886A (ko) 2003-03-29
TWI276695B (en) 2007-03-21
US7223449B2 (en) 2007-05-29
CN1410588A (zh) 2003-04-16
JP2003166047A (ja) 2003-06-13
US20030068531A1 (en) 2003-04-10
CN1284879C (zh) 2006-11-15

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