CN1284879C - 通过等离子而被离子化的氟化合物的成膜方法及成膜装置 - Google Patents

通过等离子而被离子化的氟化合物的成膜方法及成膜装置 Download PDF

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Publication number
CN1284879C
CN1284879C CNB021514518A CN02151451A CN1284879C CN 1284879 C CN1284879 C CN 1284879C CN B021514518 A CNB021514518 A CN B021514518A CN 02151451 A CN02151451 A CN 02151451A CN 1284879 C CN1284879 C CN 1284879C
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China
Prior art keywords
film
substrate
bias
fluorine compound
vacuum chamber
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Expired - Fee Related
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CNB021514518A
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English (en)
Chinese (zh)
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CN1410588A (zh
Inventor
堀崇展
梶山博司
加藤明
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Shinmaywa Industries Ltd
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Hitachi Ltd
Shinmaywa Industries Ltd
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Publication of CN1410588A publication Critical patent/CN1410588A/zh
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0694—Halides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G02B1/113—Anti-reflection coatings using inorganic layer materials only

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Surface Treatment Of Optical Elements (AREA)
CNB021514518A 2001-09-20 2002-09-20 通过等离子而被离子化的氟化合物的成膜方法及成膜装置 Expired - Fee Related CN1284879C (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP287114/2001 2001-09-20
JP2001287114 2001-09-20
JP287114/01 2001-09-20
JP080873/02 2002-03-22
JP2002080873A JP2003166047A (ja) 2001-09-20 2002-03-22 ハロゲン化合物の成膜方法及び成膜装置、並びにフッ化マグネシウム膜
JP080873/2002 2002-03-22

Publications (2)

Publication Number Publication Date
CN1410588A CN1410588A (zh) 2003-04-16
CN1284879C true CN1284879C (zh) 2006-11-15

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Family Applications (1)

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CNB021514518A Expired - Fee Related CN1284879C (zh) 2001-09-20 2002-09-20 通过等离子而被离子化的氟化合物的成膜方法及成膜装置

Country Status (5)

Country Link
US (2) US20030068531A1 (enExample)
JP (1) JP2003166047A (enExample)
KR (1) KR100498278B1 (enExample)
CN (1) CN1284879C (enExample)
TW (1) TWI276695B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3981281B2 (ja) * 2002-02-14 2007-09-26 松下電器産業株式会社 半導体集積回路の設計方法及びテスト方法
USH2212H1 (en) * 2003-09-26 2008-04-01 The United States Of America As Represented By The Secretary Of The Navy Method and apparatus for producing an ion-ion plasma continuous in time
US7615132B2 (en) * 2003-10-17 2009-11-10 Hitachi High-Technologies Corporation Plasma processing apparatus having high frequency power source with sag compensation function and plasma processing method
KR100674532B1 (ko) * 2005-02-28 2007-01-29 한국과학기술연구원 고분자 위에 접착력이 강한 금속 박막을 형성하기 위한 방법 및 장치
US7842355B2 (en) * 2005-11-01 2010-11-30 Applied Materials, Inc. System and method for modulation of power and power related functions of PECVD discharge sources to achieve new film properties
JP4757689B2 (ja) * 2006-03-31 2011-08-24 株式会社昭和真空 成膜装置及び成膜方法
US8540851B2 (en) * 2009-02-19 2013-09-24 Fujifilm Corporation Physical vapor deposition with impedance matching network
JP5504720B2 (ja) * 2009-07-14 2014-05-28 凸版印刷株式会社 成膜装置
EP2526566B1 (en) * 2010-01-21 2018-03-07 Roper Scientific, Inc. Solid state back-illuminated photon sensor and its method of fabrication
JP5843491B2 (ja) * 2010-06-24 2016-01-13 キヤノン株式会社 塗布液、光学部品の製造方法および撮影光学系
US8760054B2 (en) * 2011-01-21 2014-06-24 Axcelis Technologies Inc. Microwave plasma electron flood
US9957618B2 (en) * 2012-02-28 2018-05-01 Massachusetts Institute Of Technology Single-unit reactor design for combined oxidative, initiated, and plasma-enhanced chemical vapor deposition
JP7094154B2 (ja) * 2018-06-13 2022-07-01 東京エレクトロン株式会社 成膜装置および成膜方法
TWI700967B (zh) * 2019-07-09 2020-08-01 日商住友重機械工業股份有限公司 負離子生成裝置
CN113604788B (zh) * 2021-07-27 2022-10-21 北京北方华创微电子装备有限公司 基座偏压调节装置和方法、半导体工艺设备

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63106623A (ja) * 1986-10-23 1988-05-11 Fujitsu Ltd 液晶表示素子
JPH04224136A (ja) * 1990-12-26 1992-08-13 Matsunami Glass Kogyo Kk プラズマ放電処理を施したガラス材
US5756222A (en) * 1994-08-15 1998-05-26 Applied Materials, Inc. Corrosion-resistant aluminum article for semiconductor processing equipment
JP3585276B2 (ja) * 1994-12-01 2004-11-04 オリンパス株式会社 光学薄膜の製造方法およびこの光学薄膜を有する基板
JP3808917B2 (ja) * 1995-07-20 2006-08-16 オリンパス株式会社 薄膜の製造方法及び薄膜
JPH09243802A (ja) 1996-03-14 1997-09-19 Olympus Optical Co Ltd 光学薄膜の成膜方法および成膜装置
JPH09324262A (ja) * 1996-06-06 1997-12-16 Nikon Corp フッ化物薄膜の製造方法及びフッ化物薄膜
AU5354698A (en) * 1996-11-01 1998-05-29 Lawrence Berkeley Laboratory Low-resistivity photon-transparent window attached to photo-sensitive silicon detector
JP3987169B2 (ja) * 1997-10-02 2007-10-03 オリンパス株式会社 光学薄膜の製造方法
TW477009B (en) * 1999-05-26 2002-02-21 Tadahiro Ohmi Plasma process device
JP2001140067A (ja) * 1999-11-17 2001-05-22 Canon Inc 光学薄膜の成膜方法および成膜装置
JP4334723B2 (ja) * 2000-03-21 2009-09-30 新明和工業株式会社 イオンプレーティング成膜装置、及びイオンプレーティング成膜方法。
JP3840058B2 (ja) * 2000-04-07 2006-11-01 キヤノン株式会社 マイクロレンズ、固体撮像装置及びそれらの製造方法
US6677549B2 (en) * 2000-07-24 2004-01-13 Canon Kabushiki Kaisha Plasma processing apparatus having permeable window covered with light shielding film
US6875700B2 (en) * 2000-08-29 2005-04-05 Board Of Regents, The University Of Texas System Ion-Ion plasma processing with bias modulation synchronized to time-modulated discharges
JP4204824B2 (ja) * 2001-09-20 2009-01-07 新明和工業株式会社 光学系

Also Published As

Publication number Publication date
US20040226509A1 (en) 2004-11-18
KR20030025886A (ko) 2003-03-29
TWI276695B (en) 2007-03-21
KR100498278B1 (ko) 2005-07-01
US7223449B2 (en) 2007-05-29
CN1410588A (zh) 2003-04-16
JP2003166047A (ja) 2003-06-13
US20030068531A1 (en) 2003-04-10

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Effective date of registration: 20091204

Address after: Hyogo

Patentee after: Shinmaywa Industries, Ltd.

Address before: Japan Hyogo Prefecture

Co-patentee before: Hitachi Ltd.

Patentee before: New Ming and Industrial Corporation

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Granted publication date: 20061115

Termination date: 20120920