JP2003166047A5 - - Google Patents

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Publication number
JP2003166047A5
JP2003166047A5 JP2002080873A JP2002080873A JP2003166047A5 JP 2003166047 A5 JP2003166047 A5 JP 2003166047A5 JP 2002080873 A JP2002080873 A JP 2002080873A JP 2002080873 A JP2002080873 A JP 2002080873A JP 2003166047 A5 JP2003166047 A5 JP 2003166047A5
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Japan
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JP2002080873A
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English (en)
Japanese (ja)
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JP2003166047A (ja
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Priority to JP2002080873A priority Critical patent/JP2003166047A/ja
Priority claimed from JP2002080873A external-priority patent/JP2003166047A/ja
Priority to TW091120844A priority patent/TWI276695B/zh
Priority to KR10-2002-0057429A priority patent/KR100498278B1/ko
Priority to US10/247,081 priority patent/US20030068531A1/en
Priority to CNB021514518A priority patent/CN1284879C/zh
Publication of JP2003166047A publication Critical patent/JP2003166047A/ja
Priority to US10/858,178 priority patent/US7223449B2/en
Publication of JP2003166047A5 publication Critical patent/JP2003166047A5/ja
Pending legal-status Critical Current

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JP2002080873A 2001-09-20 2002-03-22 ハロゲン化合物の成膜方法及び成膜装置、並びにフッ化マグネシウム膜 Pending JP2003166047A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2002080873A JP2003166047A (ja) 2001-09-20 2002-03-22 ハロゲン化合物の成膜方法及び成膜装置、並びにフッ化マグネシウム膜
TW091120844A TWI276695B (en) 2001-09-20 2002-09-12 Method and apparatus for forming film of halogen compound, and magnesium fluoride film
KR10-2002-0057429A KR100498278B1 (ko) 2001-09-20 2002-09-19 할로겐 화합물의 막형성 방법, 막형성 장치, 및불화마그네슘 막
US10/247,081 US20030068531A1 (en) 2001-09-20 2002-09-19 Film deposition method and film deposition system for depositing a halogen compound film, and magnesium fluoride film
CNB021514518A CN1284879C (zh) 2001-09-20 2002-09-20 通过等离子而被离子化的氟化合物的成膜方法及成膜装置
US10/858,178 US7223449B2 (en) 2001-09-20 2004-06-01 Film deposition method

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001-287114 2001-09-20
JP2001287114 2001-09-20
JP2002080873A JP2003166047A (ja) 2001-09-20 2002-03-22 ハロゲン化合物の成膜方法及び成膜装置、並びにフッ化マグネシウム膜

Publications (2)

Publication Number Publication Date
JP2003166047A JP2003166047A (ja) 2003-06-13
JP2003166047A5 true JP2003166047A5 (enExample) 2005-06-09

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ID=26622600

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002080873A Pending JP2003166047A (ja) 2001-09-20 2002-03-22 ハロゲン化合物の成膜方法及び成膜装置、並びにフッ化マグネシウム膜

Country Status (5)

Country Link
US (2) US20030068531A1 (enExample)
JP (1) JP2003166047A (enExample)
KR (1) KR100498278B1 (enExample)
CN (1) CN1284879C (enExample)
TW (1) TWI276695B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3981281B2 (ja) * 2002-02-14 2007-09-26 松下電器産業株式会社 半導体集積回路の設計方法及びテスト方法
USH2212H1 (en) * 2003-09-26 2008-04-01 The United States Of America As Represented By The Secretary Of The Navy Method and apparatus for producing an ion-ion plasma continuous in time
US7615132B2 (en) * 2003-10-17 2009-11-10 Hitachi High-Technologies Corporation Plasma processing apparatus having high frequency power source with sag compensation function and plasma processing method
KR100674532B1 (ko) * 2005-02-28 2007-01-29 한국과학기술연구원 고분자 위에 접착력이 강한 금속 박막을 형성하기 위한 방법 및 장치
US7842355B2 (en) * 2005-11-01 2010-11-30 Applied Materials, Inc. System and method for modulation of power and power related functions of PECVD discharge sources to achieve new film properties
JP4757689B2 (ja) * 2006-03-31 2011-08-24 株式会社昭和真空 成膜装置及び成膜方法
US8540851B2 (en) * 2009-02-19 2013-09-24 Fujifilm Corporation Physical vapor deposition with impedance matching network
JP5504720B2 (ja) * 2009-07-14 2014-05-28 凸版印刷株式会社 成膜装置
EP2526566B1 (en) * 2010-01-21 2018-03-07 Roper Scientific, Inc. Solid state back-illuminated photon sensor and its method of fabrication
JP5843491B2 (ja) * 2010-06-24 2016-01-13 キヤノン株式会社 塗布液、光学部品の製造方法および撮影光学系
US8760054B2 (en) * 2011-01-21 2014-06-24 Axcelis Technologies Inc. Microwave plasma electron flood
US9957618B2 (en) * 2012-02-28 2018-05-01 Massachusetts Institute Of Technology Single-unit reactor design for combined oxidative, initiated, and plasma-enhanced chemical vapor deposition
JP7094154B2 (ja) * 2018-06-13 2022-07-01 東京エレクトロン株式会社 成膜装置および成膜方法
TWI700967B (zh) * 2019-07-09 2020-08-01 日商住友重機械工業股份有限公司 負離子生成裝置
CN113604788B (zh) * 2021-07-27 2022-10-21 北京北方华创微电子装备有限公司 基座偏压调节装置和方法、半导体工艺设备

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63106623A (ja) * 1986-10-23 1988-05-11 Fujitsu Ltd 液晶表示素子
JPH04224136A (ja) * 1990-12-26 1992-08-13 Matsunami Glass Kogyo Kk プラズマ放電処理を施したガラス材
US5756222A (en) * 1994-08-15 1998-05-26 Applied Materials, Inc. Corrosion-resistant aluminum article for semiconductor processing equipment
JP3585276B2 (ja) * 1994-12-01 2004-11-04 オリンパス株式会社 光学薄膜の製造方法およびこの光学薄膜を有する基板
JP3808917B2 (ja) * 1995-07-20 2006-08-16 オリンパス株式会社 薄膜の製造方法及び薄膜
JPH09243802A (ja) 1996-03-14 1997-09-19 Olympus Optical Co Ltd 光学薄膜の成膜方法および成膜装置
JPH09324262A (ja) * 1996-06-06 1997-12-16 Nikon Corp フッ化物薄膜の製造方法及びフッ化物薄膜
AU5354698A (en) * 1996-11-01 1998-05-29 Lawrence Berkeley Laboratory Low-resistivity photon-transparent window attached to photo-sensitive silicon detector
JP3987169B2 (ja) * 1997-10-02 2007-10-03 オリンパス株式会社 光学薄膜の製造方法
TW477009B (en) * 1999-05-26 2002-02-21 Tadahiro Ohmi Plasma process device
JP2001140067A (ja) * 1999-11-17 2001-05-22 Canon Inc 光学薄膜の成膜方法および成膜装置
JP4334723B2 (ja) * 2000-03-21 2009-09-30 新明和工業株式会社 イオンプレーティング成膜装置、及びイオンプレーティング成膜方法。
JP3840058B2 (ja) * 2000-04-07 2006-11-01 キヤノン株式会社 マイクロレンズ、固体撮像装置及びそれらの製造方法
US6677549B2 (en) * 2000-07-24 2004-01-13 Canon Kabushiki Kaisha Plasma processing apparatus having permeable window covered with light shielding film
US6875700B2 (en) * 2000-08-29 2005-04-05 Board Of Regents, The University Of Texas System Ion-Ion plasma processing with bias modulation synchronized to time-modulated discharges
JP4204824B2 (ja) * 2001-09-20 2009-01-07 新明和工業株式会社 光学系

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