JP2003142653A5 - - Google Patents

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Publication number
JP2003142653A5
JP2003142653A5 JP2002231867A JP2002231867A JP2003142653A5 JP 2003142653 A5 JP2003142653 A5 JP 2003142653A5 JP 2002231867 A JP2002231867 A JP 2002231867A JP 2002231867 A JP2002231867 A JP 2002231867A JP 2003142653 A5 JP2003142653 A5 JP 2003142653A5
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JP
Japan
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row
memory
column
conductor
memory array
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JP2002231867A
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English (en)
Japanese (ja)
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JP2003142653A (ja
JP4047657B2 (ja
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Priority claimed from US09/924,577 external-priority patent/US6584029B2/en
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Publication of JP2003142653A publication Critical patent/JP2003142653A/ja
Publication of JP2003142653A5 publication Critical patent/JP2003142653A5/ja
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Publication of JP4047657B2 publication Critical patent/JP4047657B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002231867A 2001-08-09 2002-08-08 ヒューズ／アンチヒューズを用いたワンタイムプログラマブルメモリ Expired - Fee Related JP4047657B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/924,577 2001-08-09
US09/924,577 US6584029B2 (en) 2001-08-09 2001-08-09 One-time programmable memory using fuse/anti-fuse and vertically oriented fuse unit memory cells

Publications (3)

Publication Number Publication Date
JP2003142653A JP2003142653A (ja) 2003-05-16
JP2003142653A5 true JP2003142653A5 (enExample) 2005-05-26
JP4047657B2 JP4047657B2 (ja) 2008-02-13

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ID=25450393

Family Applications (1)

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JP2002231867A Expired - Fee Related JP4047657B2 (ja) 2001-08-09 2002-08-08 ヒューズ／アンチヒューズを用いたワンタイムプログラマブルメモリ

Country Status (7)

Country Link
US (1) US6584029B2 (enExample)
EP (1) EP1286356B1 (enExample)
JP (1) JP4047657B2 (enExample)
KR (1) KR20030014653A (enExample)
CN (1) CN100401426C (enExample)
DE (1) DE60224622T2 (enExample)
TW (1) TWI275096B (enExample)

Families Citing this family (74)

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US7136322B2 (en) * 2004-08-05 2006-11-14 Analog Devices, Inc. Programmable semi-fusible link read only memory and method of margin testing same
US7110278B2 (en) * 2004-09-29 2006-09-19 Intel Corporation Crosspoint memory array utilizing one time programmable antifuse cells
US7321502B2 (en) * 2004-09-30 2008-01-22 Intel Corporation Non volatile data storage through dielectric breakdown
US7307268B2 (en) * 2005-01-19 2007-12-11 Sandisk Corporation Structure and method for biasing phase change memory array for reliable writing
JP2006324501A (ja) * 2005-05-19 2006-11-30 Toshiba Corp 相変化メモリおよびその製造方法
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US7453755B2 (en) * 2005-07-01 2008-11-18 Sandisk 3D Llc Memory cell with high-K antifuse for reverse bias programming
US7800934B2 (en) * 2005-09-28 2010-09-21 Sandisk 3D Llc Programming methods to increase window for reverse write 3D cell
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JP4939324B2 (ja) * 2005-12-02 2012-05-23 シャープ株式会社 可変抵抗素子及びその製造方法
US7486534B2 (en) * 2005-12-08 2009-02-03 Macronix International Co., Ltd. Diode-less array for one-time programmable memory
US7968967B2 (en) * 2006-07-17 2011-06-28 Taiwan Semiconductor Manufacturing Company, Ltd. One-time-programmable anti-fuse formed using damascene process
US20080037324A1 (en) * 2006-08-14 2008-02-14 Geoffrey Wen-Tai Shuy Electrical thin film memory
EP2076924B1 (en) * 2006-11-17 2017-03-08 Semiconductor Energy Laboratory Co, Ltd. Unerasable memory element and method for manufacturing the same
KR101485926B1 (ko) * 2007-02-02 2015-02-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억장치
US8283724B2 (en) 2007-02-26 2012-10-09 Semiconductor Energy Laboratory Co., Ltd. Memory element and semiconductor device, and method for manufacturing the same
JP5255870B2 (ja) * 2007-03-26 2013-08-07 株式会社半導体エネルギー研究所 記憶素子の作製方法
US7859883B2 (en) * 2007-05-14 2010-12-28 Hong Kong Applied Science And Technology Research Institute Co. Ltd. Recordable electrical memory
US8072791B2 (en) * 2007-06-25 2011-12-06 Sandisk 3D Llc Method of making nonvolatile memory device containing carbon or nitrogen doped diode
US8102694B2 (en) * 2007-06-25 2012-01-24 Sandisk 3D Llc Nonvolatile memory device containing carbon or nitrogen doped diode
US7684226B2 (en) * 2007-06-25 2010-03-23 Sandisk 3D Llc Method of making high forward current diodes for reverse write 3D cell
US7830697B2 (en) * 2007-06-25 2010-11-09 Sandisk 3D Llc High forward current diodes for reverse write 3D cell
US7759666B2 (en) * 2007-06-29 2010-07-20 Sandisk 3D Llc 3D R/W cell with reduced reverse leakage
US7800939B2 (en) * 2007-06-29 2010-09-21 Sandisk 3D Llc Method of making 3D R/W cell with reduced reverse leakage
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JP5248170B2 (ja) * 2008-04-03 2013-07-31 ルネサスエレクトロニクス株式会社 半導体装置
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US8450835B2 (en) * 2008-04-29 2013-05-28 Sandisk 3D Llc Reverse leakage reduction and vertical height shrinking of diode with halo doping
JP2010028105A (ja) 2008-06-20 2010-02-04 Semiconductor Energy Lab Co Ltd 記憶素子及び記憶素子の作製方法
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JP2010123753A (ja) * 2008-11-19 2010-06-03 Elpida Memory Inc 半導体装置、半導体装置におけるアンチヒューズ素子のプログラム方法、及び半導体装置の製造方法
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JP2010232408A (ja) * 2009-03-27 2010-10-14 Elpida Memory Inc 半導体装置及びその製造方法
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US8344428B2 (en) 2009-11-30 2013-01-01 International Business Machines Corporation Nanopillar E-fuse structure and process
KR101363831B1 (ko) * 2010-05-20 2014-02-18 매그나칩 반도체 유한회사 원-타임 프로그래머블 기능을 갖는 메모리 장치, 이를 구비한 표시패널 구동 칩 및 표시장치
TWI480980B (zh) * 2012-09-26 2015-04-11 Lin Chrong Jung 記憶體陣列及其非揮發性記憶裝置
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US9214567B2 (en) 2013-09-06 2015-12-15 Globalfoundries Inc. Nanowire compatible E-fuse
US9806256B1 (en) 2016-10-21 2017-10-31 Sandisk Technologies Llc Resistive memory device having sidewall spacer electrode and method of making thereof
CN108735662B (zh) * 2018-05-22 2021-04-16 武汉新芯集成电路制造有限公司 电可编程熔丝的编程方法
US11948630B2 (en) * 2021-11-04 2024-04-02 Applied Materials, Inc. Two-terminal one-time programmable fuses for memory cells
CN115841839B (zh) * 2023-02-23 2023-05-05 长鑫存储技术有限公司 熔丝阵列电路

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