JP2003007682A5 - - Google Patents

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Publication number
JP2003007682A5
JP2003007682A5 JP2001190891A JP2001190891A JP2003007682A5 JP 2003007682 A5 JP2003007682 A5 JP 2003007682A5 JP 2001190891 A JP2001190891 A JP 2001190891A JP 2001190891 A JP2001190891 A JP 2001190891A JP 2003007682 A5 JP2003007682 A5 JP 2003007682A5
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JP
Japan
Prior art keywords
electrode member
dimensional network
plasma
gas
supply port
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001190891A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003007682A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2001190891A priority Critical patent/JP2003007682A/ja
Priority claimed from JP2001190891A external-priority patent/JP2003007682A/ja
Priority to US10/176,804 priority patent/US7138034B2/en
Priority to PCT/JP2002/006293 priority patent/WO2003001557A1/en
Priority to CNB02812684XA priority patent/CN1302512C/zh
Priority to DE10296978T priority patent/DE10296978B4/de
Priority to KR1020037016901A priority patent/KR100845178B1/ko
Priority to TW091113856A priority patent/TW559942B/zh
Priority to MYPI20022358A priority patent/MY142898A/en
Publication of JP2003007682A publication Critical patent/JP2003007682A/ja
Publication of JP2003007682A5 publication Critical patent/JP2003007682A5/ja
Pending legal-status Critical Current

Links

JP2001190891A 2001-06-25 2001-06-25 プラズマ処理装置用の電極部材 Pending JP2003007682A (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2001190891A JP2003007682A (ja) 2001-06-25 2001-06-25 プラズマ処理装置用の電極部材
US10/176,804 US7138034B2 (en) 2001-06-25 2002-06-21 Electrode member used in a plasma treating apparatus
KR1020037016901A KR100845178B1 (ko) 2001-06-25 2002-06-24 플라즈마 처리 장치용 전극부재, 플라즈마 처리 장치 및플라즈마 처리 방법
DE10296978T DE10296978B4 (de) 2001-06-25 2002-06-24 Elektrodenteil für eine Plasmabehandlungsvorrichtung, Plasmabehandlungsvorrichtung und Plasmabehandlungsverfahren
CNB02812684XA CN1302512C (zh) 2001-06-25 2002-06-24 等离子体处理装置和处理方法及其电极元件
PCT/JP2002/006293 WO2003001557A1 (en) 2001-06-25 2002-06-24 Electrode member for plasma treating apparatus, plasma treating apparatus and plasma treating method
TW091113856A TW559942B (en) 2001-06-25 2002-06-25 Electrode member for plasma treating apparatus, plasma treating apparatus and plasma treating method
MYPI20022358A MY142898A (en) 2001-06-25 2002-06-25 Electrode member used in a plasma treating apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001190891A JP2003007682A (ja) 2001-06-25 2001-06-25 プラズマ処理装置用の電極部材

Publications (2)

Publication Number Publication Date
JP2003007682A JP2003007682A (ja) 2003-01-10
JP2003007682A5 true JP2003007682A5 (enExample) 2004-11-11

Family

ID=19029592

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001190891A Pending JP2003007682A (ja) 2001-06-25 2001-06-25 プラズマ処理装置用の電極部材

Country Status (8)

Country Link
US (1) US7138034B2 (enExample)
JP (1) JP2003007682A (enExample)
KR (1) KR100845178B1 (enExample)
CN (1) CN1302512C (enExample)
DE (1) DE10296978B4 (enExample)
MY (1) MY142898A (enExample)
TW (1) TW559942B (enExample)
WO (1) WO2003001557A1 (enExample)

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US7074720B2 (en) * 2001-06-25 2006-07-11 Matsushita Electric Industrial Co., Ltd. Plasma treating apparatus, plasma treating method and method of manufacturing semiconductor device
KR100622831B1 (ko) 2004-04-13 2006-09-18 주식회사 에이디피엔지니어링 플라즈마 처리장치
JP2006120822A (ja) * 2004-10-21 2006-05-11 Tokyo Electron Ltd 基板処理装置及び基板処理装置の圧力制御方法
JP4654738B2 (ja) * 2005-04-05 2011-03-23 パナソニック株式会社 プラズマ処理装置
JP4746620B2 (ja) 2005-04-05 2011-08-10 パナソニック株式会社 プラズマ処理装置用のガスシャワープレート
JP4619854B2 (ja) * 2005-04-18 2011-01-26 東京エレクトロン株式会社 ロードロック装置及び処理方法
JP5058909B2 (ja) * 2007-08-17 2012-10-24 株式会社半導体エネルギー研究所 プラズマｃｖｄ装置及び薄膜トランジスタの作製方法
JP5835722B2 (ja) 2009-12-10 2015-12-24 オルボテック エルティ ソラー，エルエルシー 自動順位付け多方向直列型処理装置
JP5809396B2 (ja) * 2010-06-24 2015-11-10 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US10658161B2 (en) * 2010-10-15 2020-05-19 Applied Materials, Inc. Method and apparatus for reducing particle defects in plasma etch chambers
US8459276B2 (en) 2011-05-24 2013-06-11 Orbotech LT Solar, LLC. Broken wafer recovery system
CN103169199A (zh) * 2013-03-15 2013-06-26 苏州卫鹏机电科技有限公司 一种鞋材表面等离子体放电处理设备的真空箱
CN104425289B (zh) * 2013-09-11 2017-12-15 先进科技新加坡有限公司 利用激发的混合气体的晶粒安装装置和方法
TWI584706B (zh) * 2014-07-24 2017-05-21 Uvat Technology Co Ltd A plasma etch device for a printed circuit board
CN104835876B (zh) * 2015-04-27 2018-01-05 北京金晟阳光科技有限公司 气体均匀布气装置
KR101938306B1 (ko) * 2016-04-18 2019-01-14 최상준 건식 에칭장치의 제어방법
IT201700083957A1 (it) * 2017-07-24 2019-01-24 Wise S R L Metodo e apparato per il trattamento di pannelli
CN113490765A (zh) * 2019-03-08 2021-10-08 应用材料公司 用于处理腔室的多孔喷头
KR102405333B1 (ko) 2020-11-25 2022-06-07 (주)이노플라즈텍 평판형 필터 전극을 이용한 분말 표면처리용 플라즈마 장치

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US4367114A (en) 1981-05-06 1983-01-04 The Perkin-Elmer Corporation High speed plasma etching system
JPS586134A (ja) 1981-07-03 1983-01-13 Seiko Epson Corp プラズマエツチング装置
JPS59111967A (ja) 1982-12-17 1984-06-28 株式会社ブリヂストン セラミック多孔体
FR2538987A1 (fr) * 1983-01-05 1984-07-06 Commissariat Energie Atomique Enceinte pour le traitement et notamment la gravure de substrats par la methode du plasma reactif
JPS60171220A (ja) 1984-02-14 1985-09-04 Nippon Cement Co Ltd アルミナ多孔体の製造方法
US4664858A (en) 1984-08-21 1987-05-12 Kurosaki Refractories Co., Ltd. Manufacturing method of a ceramics body having through holes
JPS61278144A (ja) 1985-06-01 1986-12-09 Anelva Corp プラズマ処理装置
AT386316B (de) 1985-11-11 1988-08-10 Voest Alpine Ag Plasmareaktor zum aetzen von leiterplatten
JPS63282179A (ja) 1987-05-12 1988-11-18 Nippon Steel Corp 多孔質セラミックスの製造方法
JPH03101126A (ja) 1989-09-13 1991-04-25 Eagle Ind Co Ltd プラズマエッチング装置用電極
JPH07114198B2 (ja) * 1989-10-02 1995-12-06 東海カーボン株式会社 プラズマエッチング用電極板
JPH0437124A (ja) * 1990-06-01 1992-02-07 Matsushita Electric Ind Co Ltd プラズマ処理装置
JP2837993B2 (ja) 1992-06-19 1998-12-16 松下電工株式会社 プラズマ処理方法およびその装置
JP3173928B2 (ja) 1992-09-25 2001-06-04 キヤノン株式会社 基板保持装置、基板保持方法および露光装置
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JPH08209349A (ja) * 1995-02-06 1996-08-13 Kokusai Electric Co Ltd プラズマｃｖｄ装置
DE19505906A1 (de) 1995-02-21 1996-08-22 Siemens Ag Verfahren zum Damage-Ätzen der Rückseite einer Halbleiterscheibe bei geschützter Scheibenvorderseite
WO1996031997A1 (en) 1995-04-07 1996-10-10 Seiko Epson Corporation Surface treatment apparatus
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US5968377A (en) 1996-05-24 1999-10-19 Sekisui Chemical Co., Ltd. Treatment method in glow-discharge plasma and apparatus thereof
FR2756668B1 (fr) * 1996-12-02 1999-01-08 Accumulateurs Fixes Electrode a support tridimensionnel poreux
JPH11135442A (ja) * 1997-10-31 1999-05-21 Canon Inc 堆積膜形成装置及び堆積膜形成方法
JPH11283973A (ja) 1998-03-27 1999-10-15 Toshiba Ceramics Co Ltd プラズマエッチング装置用電極の製造方法
JP3695184B2 (ja) * 1998-12-03 2005-09-14 松下電器産業株式会社 プラズマエッチング装置およびプラズマエッチング方法
US6118218A (en) * 1999-02-01 2000-09-12 Sigma Technologies International, Inc. Steady-state glow-discharge plasma at atmospheric pressure

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