KR100845178B1 - 플라즈마 처리 장치용 전극부재, 플라즈마 처리 장치 및플라즈마 처리 방법 - Google Patents

플라즈마 처리 장치용 전극부재, 플라즈마 처리 장치 및플라즈마 처리 방법 Download PDF

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KR100845178B1
KR100845178B1 KR1020037016901A KR20037016901A KR100845178B1 KR 100845178 B1 KR100845178 B1 KR 100845178B1 KR 1020037016901 A KR1020037016901 A KR 1020037016901A KR 20037016901 A KR20037016901 A KR 20037016901A KR 100845178 B1 KR100845178 B1 KR 100845178B1
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South Korea
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electrode
plasma
gas
gas supply
processing apparatus
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Korean (ko)
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KR20040021617A (ko
Inventor
키요시 아리타
테츠히로 이와이
히로시 하지
쇼지 사케미
타이지 마타노
노부히로 사토우
Original Assignee
마쯔시다덴기산교 가부시키가이샤
구로사키 하리마 코포레이션
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45568—Porous nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • ing And Chemical Polishing (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
KR1020037016901A 2001-06-25 2002-06-24 플라즈마 처리 장치용 전극부재, 플라즈마 처리 장치 및플라즈마 처리 방법 Expired - Fee Related KR100845178B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001190891A JP2003007682A (ja) 2001-06-25 2001-06-25 プラズマ処理装置用の電極部材
JPJP-P-2001-00190891 2001-06-25
PCT/JP2002/006293 WO2003001557A1 (en) 2001-06-25 2002-06-24 Electrode member for plasma treating apparatus, plasma treating apparatus and plasma treating method

Publications (2)

Publication Number Publication Date
KR20040021617A KR20040021617A (ko) 2004-03-10
KR100845178B1 true KR100845178B1 (ko) 2008-07-10

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KR1020037016901A Expired - Fee Related KR100845178B1 (ko) 2001-06-25 2002-06-24 플라즈마 처리 장치용 전극부재, 플라즈마 처리 장치 및플라즈마 처리 방법

Country Status (8)

Country Link
US (1) US7138034B2 (enExample)
JP (1) JP2003007682A (enExample)
KR (1) KR100845178B1 (enExample)
CN (1) CN1302512C (enExample)
DE (1) DE10296978B4 (enExample)
MY (1) MY142898A (enExample)
TW (1) TW559942B (enExample)
WO (1) WO2003001557A1 (enExample)

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US7074720B2 (en) * 2001-06-25 2006-07-11 Matsushita Electric Industrial Co., Ltd. Plasma treating apparatus, plasma treating method and method of manufacturing semiconductor device
KR100622831B1 (ko) 2004-04-13 2006-09-18 주식회사 에이디피엔지니어링 플라즈마 처리장치
JP2006120822A (ja) * 2004-10-21 2006-05-11 Tokyo Electron Ltd 基板処理装置及び基板処理装置の圧力制御方法
JP4654738B2 (ja) * 2005-04-05 2011-03-23 パナソニック株式会社 プラズマ処理装置
JP4746620B2 (ja) 2005-04-05 2011-08-10 パナソニック株式会社 プラズマ処理装置用のガスシャワープレート
JP4619854B2 (ja) * 2005-04-18 2011-01-26 東京エレクトロン株式会社 ロードロック装置及び処理方法
JP5058909B2 (ja) * 2007-08-17 2012-10-24 株式会社半導体エネルギー研究所 プラズマｃｖｄ装置及び薄膜トランジスタの作製方法
JP5835722B2 (ja) 2009-12-10 2015-12-24 オルボテック エルティ ソラー，エルエルシー 自動順位付け多方向直列型処理装置
JP5809396B2 (ja) * 2010-06-24 2015-11-10 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US10658161B2 (en) * 2010-10-15 2020-05-19 Applied Materials, Inc. Method and apparatus for reducing particle defects in plasma etch chambers
US8459276B2 (en) 2011-05-24 2013-06-11 Orbotech LT Solar, LLC. Broken wafer recovery system
CN103169199A (zh) * 2013-03-15 2013-06-26 苏州卫鹏机电科技有限公司 一种鞋材表面等离子体放电处理设备的真空箱
CN104425289B (zh) * 2013-09-11 2017-12-15 先进科技新加坡有限公司 利用激发的混合气体的晶粒安装装置和方法
TWI584706B (zh) * 2014-07-24 2017-05-21 Uvat Technology Co Ltd A plasma etch device for a printed circuit board
CN104835876B (zh) * 2015-04-27 2018-01-05 北京金晟阳光科技有限公司 气体均匀布气装置
KR101938306B1 (ko) * 2016-04-18 2019-01-14 최상준 건식 에칭장치의 제어방법
IT201700083957A1 (it) * 2017-07-24 2019-01-24 Wise S R L Metodo e apparato per il trattamento di pannelli
KR102849949B1 (ko) * 2019-03-08 2025-08-22 어플라이드 머티어리얼스, 인코포레이티드 프로세싱 챔버를 위한 다공성 샤워헤드
KR102405333B1 (ko) 2020-11-25 2022-06-07 (주)이노플라즈텍 평판형 필터 전극을 이용한 분말 표면처리용 플라즈마 장치

Citations (3)

* Cited by examiner, † Cited by third party
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US4367114A (en) * 1981-05-06 1983-01-04 The Perkin-Elmer Corporation High speed plasma etching system
EP0421686A2 (en) * 1989-10-02 1991-04-10 Tokai Carbon Company, Ltd. Electrode plate for plasma etching
US6118218A (en) * 1999-02-01 2000-09-12 Sigma Technologies International, Inc. Steady-state glow-discharge plasma at atmospheric pressure

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JPS586134A (ja) 1981-07-03 1983-01-13 Seiko Epson Corp プラズマエツチング装置
JPS59111967A (ja) 1982-12-17 1984-06-28 株式会社ブリヂストン セラミック多孔体
FR2538987A1 (fr) * 1983-01-05 1984-07-06 Commissariat Energie Atomique Enceinte pour le traitement et notamment la gravure de substrats par la methode du plasma reactif
JPS60171220A (ja) 1984-02-14 1985-09-04 Nippon Cement Co Ltd アルミナ多孔体の製造方法
US4664858A (en) 1984-08-21 1987-05-12 Kurosaki Refractories Co., Ltd. Manufacturing method of a ceramics body having through holes
JPS61278144A (ja) 1985-06-01 1986-12-09 Anelva Corp プラズマ処理装置
AT386316B (de) 1985-11-11 1988-08-10 Voest Alpine Ag Plasmareaktor zum aetzen von leiterplatten
JPS63282179A (ja) 1987-05-12 1988-11-18 Nippon Steel Corp 多孔質セラミックスの製造方法
JPH03101126A (ja) 1989-09-13 1991-04-25 Eagle Ind Co Ltd プラズマエッチング装置用電極
JPH0437124A (ja) * 1990-06-01 1992-02-07 Matsushita Electric Ind Co Ltd プラズマ処理装置
JP2837993B2 (ja) 1992-06-19 1998-12-16 松下電工株式会社 プラズマ処理方法およびその装置
JP3173928B2 (ja) 1992-09-25 2001-06-04 キヤノン株式会社 基板保持装置、基板保持方法および露光装置
JPH0797690A (ja) * 1993-09-29 1995-04-11 Toppan Printing Co Ltd プラズマｃｖｄ装置
WO1995026844A1 (fr) * 1994-03-31 1995-10-12 Hitachi Chemical Company, Ltd. Procede de production de corps poreux
JPH08209349A (ja) * 1995-02-06 1996-08-13 Kokusai Electric Co Ltd プラズマｃｖｄ装置
DE19505906A1 (de) 1995-02-21 1996-08-22 Siemens Ag Verfahren zum Damage-Ätzen der Rückseite einer Halbleiterscheibe bei geschützter Scheibenvorderseite
JP3959745B2 (ja) 1995-04-07 2007-08-15 セイコーエプソン株式会社 表面処理装置
BR9710709A (pt) * 1996-05-15 1999-08-17 Hyperion Catalysis Int Estruturas de carbono porosas e rigidas processos de fabrica-Æo processos de uso e produtos que as cont-m
US5968377A (en) 1996-05-24 1999-10-19 Sekisui Chemical Co., Ltd. Treatment method in glow-discharge plasma and apparatus thereof
FR2756668B1 (fr) * 1996-12-02 1999-01-08 Accumulateurs Fixes Electrode a support tridimensionnel poreux
JPH11135442A (ja) * 1997-10-31 1999-05-21 Canon Inc 堆積膜形成装置及び堆積膜形成方法
JPH11283973A (ja) 1998-03-27 1999-10-15 Toshiba Ceramics Co Ltd プラズマエッチング装置用電極の製造方法
JP3695184B2 (ja) 1998-12-03 2005-09-14 松下電器産業株式会社 プラズマエッチング装置およびプラズマエッチング方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4367114A (en) * 1981-05-06 1983-01-04 The Perkin-Elmer Corporation High speed plasma etching system
EP0421686A2 (en) * 1989-10-02 1991-04-10 Tokai Carbon Company, Ltd. Electrode plate for plasma etching
US6118218A (en) * 1999-02-01 2000-09-12 Sigma Technologies International, Inc. Steady-state glow-discharge plasma at atmospheric pressure

Also Published As

Publication number Publication date
KR20040021617A (ko) 2004-03-10
CN1302512C (zh) 2007-02-28
DE10296978B4 (de) 2010-03-04
TW559942B (en) 2003-11-01
DE10296978T5 (de) 2004-10-07
US7138034B2 (en) 2006-11-21
JP2003007682A (ja) 2003-01-10
CN1520604A (zh) 2004-08-11
MY142898A (en) 2011-01-31
US20020195202A1 (en) 2002-12-26
WO2003001557A1 (en) 2003-01-03

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