JP2002528921A - キャビティー内の周波数変換された光学的ポンプ半導体レーザー - Google Patents

キャビティー内の周波数変換された光学的ポンプ半導体レーザー

Info

Publication number
JP2002528921A
JP2002528921A JP2000578884A JP2000578884A JP2002528921A JP 2002528921 A JP2002528921 A JP 2002528921A JP 2000578884 A JP2000578884 A JP 2000578884A JP 2000578884 A JP2000578884 A JP 2000578884A JP 2002528921 A JP2002528921 A JP 2002528921A
Authority
JP
Japan
Prior art keywords
laser
radiation
wavelength
frequency
resonator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000578884A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002528921A5 (enExample
Inventor
カープラーラ、アンドリア
チラ、ジュアン・エル
スピネリー、ルイス・エイ
Original Assignee
コヒーレント・インク
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=22654904&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP2002528921(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by コヒーレント・インク filed Critical コヒーレント・インク
Publication of JP2002528921A publication Critical patent/JP2002528921A/ja
Publication of JP2002528921A5 publication Critical patent/JP2002528921A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
    • H01S3/082—Construction or shape of optical resonators or components thereof comprising three or more reflectors defining a plurality of resonators, e.g. for mode selection or suppression
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/1083—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering using parametric generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/109—Frequency multiplication, e.g. harmonic generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18383—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with periodic active regions at nodes or maxima of light intensity

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Lasers (AREA)
JP2000578884A 1998-10-26 1999-09-30 キャビティー内の周波数変換された光学的ポンプ半導体レーザー Pending JP2002528921A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/179,022 US5991318A (en) 1998-10-26 1998-10-26 Intracavity frequency-converted optically-pumped semiconductor laser
US09/179,022 1998-10-26
PCT/US1999/022960 WO2000025399A1 (en) 1998-10-26 1999-09-30 Intracavity frequency-converted optically-pumped semiconductor l aser

Publications (2)

Publication Number Publication Date
JP2002528921A true JP2002528921A (ja) 2002-09-03
JP2002528921A5 JP2002528921A5 (enExample) 2006-11-24

Family

ID=22654904

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000578884A Pending JP2002528921A (ja) 1998-10-26 1999-09-30 キャビティー内の周波数変換された光学的ポンプ半導体レーザー

Country Status (6)

Country Link
US (2) US5991318A (enExample)
EP (1) EP1125350B2 (enExample)
JP (1) JP2002528921A (enExample)
AT (1) ATE288631T1 (enExample)
DE (1) DE69923577T3 (enExample)
WO (1) WO2000025399A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004207724A (ja) * 2002-12-20 2004-07-22 Osram Opto Semiconductors Gmbh ヴァーティカルエミッション型半導体レーザー
JP2005217428A (ja) * 2004-01-30 2005-08-11 Osram Opto Semiconductors Gmbh 干渉フィルタを有する表面放出半導体レーザ
JP2009194389A (ja) * 2008-02-14 2009-08-27 Osram Opto Semiconductors Gmbh 半導体レーザモジュール

Families Citing this family (79)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6373868B1 (en) 1993-05-28 2002-04-16 Tong Zhang Single-mode operation and frequency conversions for diode-pumped solid-state lasers
US6327293B1 (en) * 1998-08-12 2001-12-04 Coherent, Inc. Optically-pumped external-mirror vertical-cavity semiconductor-laser
US6285702B1 (en) * 1999-03-05 2001-09-04 Coherent, Inc. High-power external-cavity optically-pumped semiconductor laser
WO2000060710A1 (en) * 1999-03-31 2000-10-12 Japan As Represented By Director General Of Agency Of Industrial Science And Technology Surface optical amplifier and method of producing the same
US6198756B1 (en) * 1999-04-15 2001-03-06 Coherent, Inc. CW far-UV laser system with two active resonators
DE19934638B4 (de) * 1999-07-23 2004-07-08 Jenoptik Ldt Gmbh Modensynchronisierter Festkörperlaser mit mindestens einem konkaven Faltungsspiegel
CA2381773A1 (en) * 1999-08-12 2001-02-22 Coretek, Inc. Method for modulating an optically pumped, tunable vertical cavity surface emitting laser (vcsel)
US6795477B1 (en) 1999-08-12 2004-09-21 Cortek Inc. Method for modulating an optically pumped, tunable vertical cavity surface emitting laser (VCSEL)
US6693941B1 (en) * 1999-09-10 2004-02-17 Fuji Photo Film Co., Ltd. Semiconductor laser apparatus
US6393038B1 (en) 1999-10-04 2002-05-21 Sandia Corporation Frequency-doubled vertical-external-cavity surface-emitting laser
US6370168B1 (en) * 1999-10-20 2002-04-09 Coherent, Inc. Intracavity frequency-converted optically-pumped semiconductor laser
US6424669B1 (en) * 1999-10-29 2002-07-23 E20 Communications, Inc. Integrated optically pumped vertical cavity surface emitting laser
WO2001031756A1 (en) 1999-10-29 2001-05-03 E20 Communications, Inc. Modulated integrated optically pumped vertical cavity surface emitting lasers
US6456424B1 (en) * 2000-05-17 2002-09-24 Lightwave Electronics Corporation Noise suppression using pump-resonant optical parametric oscillation
DE10026734A1 (de) * 2000-05-30 2001-12-13 Osram Opto Semiconductors Gmbh Optisch gepumpte oberflächenemittierende Halbleiterlaservorrichtung und Verfahren zu deren Herstellung
DE10108079A1 (de) * 2000-05-30 2002-09-12 Osram Opto Semiconductors Gmbh Optisch gepumpte oberflächenemittierende Halbleiterlaservorrichtung und Verfahren zu deren Herstellung
WO2001095445A2 (en) * 2000-06-02 2001-12-13 Coherent, Inc. Optically-pumped semiconductor laser with output coupled to optical fiber
US6628696B2 (en) * 2001-01-19 2003-09-30 Siros Technologies, Inc. Multi-channel DWDM transmitter based on a vertical cavity surface emitting laser
US6680956B2 (en) * 2001-02-15 2004-01-20 Aculight Corporation External frequency conversion of surface-emitting diode lasers
US6556610B1 (en) * 2001-04-12 2003-04-29 E20 Communications, Inc. Semiconductor lasers
EP1255331A1 (en) * 2001-05-01 2002-11-06 Coherent, Inc. CW far-UV laser system with two active resonators
US6717964B2 (en) 2001-07-02 2004-04-06 E20 Communications, Inc. Method and apparatus for wavelength tuning of optically pumped vertical cavity surface emitting lasers
JP3885529B2 (ja) * 2001-08-06 2007-02-21 ソニー株式会社 レーザー光発生装置
GB0122670D0 (en) * 2001-09-20 2001-11-14 Karpushko Fedor V Intracavity frequency conversion of laser
US6507593B1 (en) * 2001-09-24 2003-01-14 Coherent, Inc. Step-tunable external-cavity surface-emitting semiconductor laser
US6693942B2 (en) * 2001-10-23 2004-02-17 William F. Krupke Diode-pumped visible wavelength alkali laser
US6643311B2 (en) * 2001-10-23 2003-11-04 William F. Krupke Diode-pumped alkali laser
GB2385459B (en) * 2001-10-30 2005-06-15 Laser Quantum Ltd Laser Cavity
DE10214120B4 (de) * 2002-03-28 2007-06-06 Osram Opto Semiconductors Gmbh Optisch pumpbare oberflächenemittierende Halbleiterlaservorrichtung
US6661830B1 (en) * 2002-10-07 2003-12-09 Coherent, Inc. Tunable optically-pumped semiconductor laser including a polarizing resonator mirror
US20040076204A1 (en) 2002-10-16 2004-04-22 Kruschwitz Brian E. External cavity organic laser
DE10312742B4 (de) * 2002-11-29 2005-09-29 Osram Opto Semiconductors Gmbh Optisch gepumpte Halbleiterlaservorrichtung
US7088749B2 (en) * 2003-01-06 2006-08-08 Miyachi Unitek Corporation Green welding laser
JP2004253800A (ja) * 2003-02-19 2004-09-09 Osram Opto Semiconductors Gmbh レーザーパルス形成用レーザー装置
US6940880B2 (en) * 2003-03-11 2005-09-06 Coherent, Inc. Optically pumped semiconductor ring laser
DE10339980B4 (de) * 2003-08-29 2011-01-05 Osram Opto Semiconductors Gmbh Halbleiterlaser mit reduzierter Verlustwärme
DE102004011456A1 (de) * 2004-01-30 2005-08-18 Osram Opto Semiconductors Gmbh Oberflächenemittierender Halbleiterlaser mit einem Interferenzfilter
DE102004012014B4 (de) * 2004-03-11 2009-09-10 Osram Opto Semiconductors Gmbh Scheibenlaser mit einer Pumpanordnung
US20060029112A1 (en) * 2004-03-31 2006-02-09 Young Ian A Surface emitting laser with an integrated absorber
DE102004036963A1 (de) 2004-05-28 2005-12-22 Osram Opto Semiconductors Gmbh Optisch gepumpte oberflächenemittierende Halbleiterlaser-Vorrichtung
KR101015499B1 (ko) 2004-06-19 2011-02-16 삼성전자주식회사 복수의 파장을 발생시키는 반도체 레이저 소자 및 상기반도체 레이저 소자용 레이저 펌핑부
WO2006032252A1 (de) * 2004-09-22 2006-03-30 Osram Opto Semiconductors Gmbh Seitlich optisch gepumpter oberflächenemittierender halbleiterlaser auf einer wärmesenke
US20060083284A1 (en) 2004-10-14 2006-04-20 Barbara Paldus Method for increasing the dynamic range of a cavity enhanced optical spectrometer
US7244028B2 (en) * 2004-12-14 2007-07-17 Coherent, Inc. Laser illuminated projection displays
US7355657B2 (en) * 2004-12-14 2008-04-08 Coherent, Inc. Laser illuminated projection displays
US7413311B2 (en) * 2005-09-29 2008-08-19 Coherent, Inc. Speckle reduction in laser illuminated projection displays having a one-dimensional spatial light modulator
DE102005058237A1 (de) * 2005-09-30 2007-04-05 Osram Opto Semiconductors Gmbh Oberflächenemittierendes Halbleiterlaser-Bauelement und optische Projektionsvorrichtung mit solch einem oberflächenemittierenden Halbleiterlaser-Bauelement
KR101100431B1 (ko) 2005-11-22 2011-12-30 삼성전자주식회사 고효율 2차 조화파 생성 외부 공진기형 면발광 레이저
DE102005058900A1 (de) * 2005-12-09 2007-06-14 Osram Opto Semiconductors Gmbh Vertikal emittierender, optisch gepumpter Halbleiterlaser mit externem Resonator
DE102006017293A1 (de) * 2005-12-30 2007-07-05 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer optisch pumpbaren Halbleitervorrichtung
US20070177638A1 (en) * 2006-01-27 2007-08-02 Wolf Seelert Frequency-doubled solid state laser optically pumped by frequency-doubled external-cavity surface-emitting semiconductor laser
GB0608805D0 (en) * 2006-05-04 2006-06-14 Coherent Inc Method for laterally-coupling frequency-converted laser radiation out of a resonator
US7447245B2 (en) * 2006-06-19 2008-11-04 Coherent, Inc. Optically pumped semiconductor laser pumped optical parametric oscillator
KR101257850B1 (ko) * 2006-11-22 2013-04-24 삼성전자주식회사 고효율 레이저칩 및 이를 이용한 외부 공진기형 면발광레이저
US7869471B1 (en) * 2007-07-12 2011-01-11 Photonics Industries International, Inc. Tunable OPO laser
US20090161703A1 (en) * 2007-12-20 2009-06-25 Wolf Seelert SUM-FREQUENCY-MIXING Pr:YLF LASER APPARATUS WITH DEEP-UV OUTPUT
US20090285248A1 (en) * 2008-05-13 2009-11-19 Klashtech-Karpushko Laser Technologies Gmbh Uv light generation by frequency conversion of radiation of a ruby laser pumped with a second harmonic of a solid-state laser
DE102008030254A1 (de) * 2008-06-25 2009-12-31 Osram Opto Semiconductors Gmbh Halbleiterlasermodul
US10244181B2 (en) 2009-02-17 2019-03-26 Trilumina Corp. Compact multi-zone infrared laser illuminator
US20130223846A1 (en) 2009-02-17 2013-08-29 Trilumina Corporation High speed free-space optical communications
US10038304B2 (en) 2009-02-17 2018-07-31 Trilumina Corp. Laser arrays for variable optical properties
US8995485B2 (en) * 2009-02-17 2015-03-31 Trilumina Corp. High brightness pulsed VCSEL sources
US8995493B2 (en) 2009-02-17 2015-03-31 Trilumina Corp. Microlenses for multibeam arrays of optoelectronic devices for high frequency operation
US8045593B2 (en) * 2009-04-07 2011-10-25 Corning Incorporated Method of controlling a frequency-converted laser source comprising an external optical feedback component
US20100254412A1 (en) * 2009-04-07 2010-10-07 Jacques Gollier Phase Modulation In A Frequency-Converted Laser Source Comprising An External Optical Feedback Component
US8243765B2 (en) * 2009-06-19 2012-08-14 Coherent, Inc. Intracavity frequency-converted optically-pumped semiconductor optical parametric oscillator
US7991026B2 (en) * 2009-06-19 2011-08-02 Coherent, Inc. Intracavity frequency-converted optically-pumped semiconductor laser with red-light output
US8979338B2 (en) 2009-12-19 2015-03-17 Trilumina Corp. System for combining laser array outputs into a single beam carrying digital data
WO2011075609A1 (en) * 2009-12-19 2011-06-23 Trilumina Corporation System and method for combining laser arrays for digital outputs
US11095365B2 (en) 2011-08-26 2021-08-17 Lumentum Operations Llc Wide-angle illuminator module
JP6136284B2 (ja) 2012-03-13 2017-05-31 株式会社リコー 半導体積層体及び面発光レーザ素子
US9190798B2 (en) 2014-01-09 2015-11-17 Coherent, Inc. Optical parametric oscillator with embedded resonator
JP2015196163A (ja) 2014-03-31 2015-11-09 三菱重工業株式会社 加工装置及び加工方法
TWI622188B (zh) * 2016-12-08 2018-04-21 錼創科技股份有限公司 發光二極體晶片
WO2018108251A1 (en) 2016-12-13 2018-06-21 Vexlum Oy Laser
US10177524B2 (en) 2017-05-23 2019-01-08 Coherent, Inc. Intra-cavity frequency-converted optically-pumped semiconductor laser
CN109873291A (zh) * 2019-04-10 2019-06-11 山西大学 一种可输出三种波长的全固态激光器
WO2024047442A1 (en) * 2022-08-29 2024-03-07 Pavilion Integration Corporation A laser with no anti-reflection coating for the lasing wavelength
CN117578183A (zh) * 2023-12-12 2024-02-20 重庆师范大学 一种高性能单频激光器

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50148096A (enExample) * 1974-05-20 1975-11-27
JPH01274487A (ja) * 1988-04-27 1989-11-02 Hamamatsu Photonics Kk 光波長変換装置
JPH03234073A (ja) * 1990-02-09 1991-10-18 Toshiba Corp 高調波発生用レーザ装置
JPH06265955A (ja) * 1993-03-15 1994-09-22 Mitsui Petrochem Ind Ltd 波長変換素子
JPH0799360A (ja) * 1993-05-18 1995-04-11 Matsushita Electric Ind Co Ltd レーザ装置
JPH0799357A (ja) * 1993-09-28 1995-04-11 Hitachi Metals Ltd 半導体レーザ励起固体レーザ装置
JPH0895105A (ja) * 1994-07-26 1996-04-12 Hitachi Metals Ltd 第二高調波発生装置およびレーザプリンタ装置
JPH1065261A (ja) * 1996-07-17 1998-03-06 Commiss Energ Atom ２つの構成物の組立工程とこの工程によって製造された装置とマイクロレーザへの適用

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2522338C3 (de) * 1974-05-20 1979-11-29 Hitachi, Ltd., Tokio Vorrichtung zur Erzeugung von kohärentem licht
US4656635A (en) † 1985-05-01 1987-04-07 Spectra-Physics, Inc. Laser diode pumped solid state laser
JP3066966B2 (ja) † 1988-02-29 2000-07-17 ソニー株式会社 レーザ光源
US5050179A (en) * 1989-04-20 1991-09-17 Massachusetts Institute Of Technology External cavity semiconductor laser
US5331002A (en) * 1990-04-19 1994-07-19 Merrell Dow Pharmaceuticals Inc. 5-aryl-4-alkyl-3H-1,2,4-triazole-3-thiones useful as memory enhancers
US5131002A (en) * 1991-02-12 1992-07-14 Massachusetts Institute Of Technology External cavity semiconductor laser system
US5315433A (en) † 1991-02-28 1994-05-24 Fuji Photo Film Co., Ltd. Optical wavelength converting apparatus
US5257274A (en) * 1991-05-10 1993-10-26 Alliedsignal Inc. High power laser employing fiber optic delivery means
US5289485A (en) * 1991-09-10 1994-02-22 Micracor, Inc. Multi-element optically pumped external cavity laser system
JPH05275785A (ja) † 1992-03-28 1993-10-22 Sony Corp レーザ光発生光学装置
DE4228862A1 (de) * 1992-08-29 1994-03-03 Zeiss Carl Fa Laseranordnung zur Erzeugung von UV-Strahlung
US5384797A (en) * 1992-09-21 1995-01-24 Sdl, Inc. Monolithic multi-wavelength laser diode array
US5375138A (en) † 1992-09-25 1994-12-20 International Business Machines Corporation Optical cavities for lasers
JPH06283794A (ja) † 1993-03-25 1994-10-07 Fuji Photo Film Co Ltd レーザーダイオードポンピング固体レーザー
DE4315580A1 (de) * 1993-05-11 1994-11-17 Fraunhofer Ges Forschung Anordnung aus Laserdioden und einem Kühlsystem sowie Verfahren zu deren Herstellung
US5436920A (en) * 1993-05-18 1995-07-25 Matsushita Electric Industrial Co., Ltd. Laser device
US5638388A (en) † 1995-02-04 1997-06-10 Spectra-Physics Lasers, Inc. Diode pumped, multi axial mode intracavity doubled laser
US5461637A (en) * 1994-03-16 1995-10-24 Micracor, Inc. High brightness, vertical cavity semiconductor lasers
US6243407B1 (en) * 1997-03-21 2001-06-05 Novalux, Inc. High power laser devices

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50148096A (enExample) * 1974-05-20 1975-11-27
JPH01274487A (ja) * 1988-04-27 1989-11-02 Hamamatsu Photonics Kk 光波長変換装置
JPH03234073A (ja) * 1990-02-09 1991-10-18 Toshiba Corp 高調波発生用レーザ装置
JPH06265955A (ja) * 1993-03-15 1994-09-22 Mitsui Petrochem Ind Ltd 波長変換素子
JPH0799360A (ja) * 1993-05-18 1995-04-11 Matsushita Electric Ind Co Ltd レーザ装置
JPH0799357A (ja) * 1993-09-28 1995-04-11 Hitachi Metals Ltd 半導体レーザ励起固体レーザ装置
JPH0895105A (ja) * 1994-07-26 1996-04-12 Hitachi Metals Ltd 第二高調波発生装置およびレーザプリンタ装置
JPH1065261A (ja) * 1996-07-17 1998-03-06 Commiss Energ Atom ２つの構成物の組立工程とこの工程によって製造された装置とマイクロレーザへの適用

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004207724A (ja) * 2002-12-20 2004-07-22 Osram Opto Semiconductors Gmbh ヴァーティカルエミッション型半導体レーザー
JP2005217428A (ja) * 2004-01-30 2005-08-11 Osram Opto Semiconductors Gmbh 干渉フィルタを有する表面放出半導体レーザ
JP2009194389A (ja) * 2008-02-14 2009-08-27 Osram Opto Semiconductors Gmbh 半導体レーザモジュール
US8477814B2 (en) 2008-02-14 2013-07-02 Osram Opto Semiconductors Gmbh Semiconductor laser module

Also Published As

Publication number Publication date
EP1125350B1 (en) 2005-02-02
WO2000025399A1 (en) 2000-05-04
ATE288631T1 (de) 2005-02-15
DE69923577D1 (de) 2005-03-10
DE69923577T2 (de) 2006-02-09
DE69923577T3 (de) 2009-05-14
US5991318A (en) 1999-11-23
US6167068A (en) 2000-12-26
EP1125350B2 (en) 2008-12-03
EP1125350A1 (en) 2001-08-22

Similar Documents

Publication Publication Date Title
JP2002528921A (ja) キャビティー内の周波数変換された光学的ポンプ半導体レーザー
US6370168B1 (en) Intracavity frequency-converted optically-pumped semiconductor laser
US8315284B2 (en) Intracavity frequency conversion of laser radiation
KR100375850B1 (ko) 고전력 레이저 장치
JP4489440B2 (ja) 非被覆ブリュースタ表面を用いてキャビティ内共振を増強した第４高調波の生成
JPH11502369A (ja) レーザダイオードを受動光学空洞にロックするための技術
US6680956B2 (en) External frequency conversion of surface-emitting diode lasers
US5585962A (en) External resonant frequency mixers based on degenerate and half-degenerate resonators
KR930006854B1 (ko) 레이저 시스템
JP4837830B2 (ja) 高電力外部空洞光学的ポンピング半導体レーザー
US5696780A (en) Frequency conversion system
WO2010148055A1 (en) External cavity vcsel with intracavity singly resonant opo frequency multplying
JPH05226749A (ja) 波長可変レーザー装置
US7474678B2 (en) Optically pumped semiconductor laser
JPH03108785A (ja) レーザ光波長変換方式
JPH06350173A (ja) 偏光および縦モード制御素子並びに固体レーザー装置
CN112993733A (zh) 一种基于Er:YAG中红外光参量振荡器光控波长选择泵浦源
JPH0745896A (ja) 光源装置
JPH10178227A (ja) 波長変換レーザ装置
JPH04338736A (ja) 共振器構造の光波長変換装置
JPH06138507A (ja) 高調波発生装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20061002

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20061002

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20071226

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20091214

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100223

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20100518

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20100525

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20100623

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20100630

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20100928