DE69923577T3 - Optisch gepumpter halbleiterlaser mit resonatorinterner frequenzumwandlung - Google Patents
Optisch gepumpter halbleiterlaser mit resonatorinterner frequenzumwandlung Download PDFInfo
- Publication number
- DE69923577T3 DE69923577T3 DE69923577T DE69923577T DE69923577T3 DE 69923577 T3 DE69923577 T3 DE 69923577T3 DE 69923577 T DE69923577 T DE 69923577T DE 69923577 T DE69923577 T DE 69923577T DE 69923577 T3 DE69923577 T3 DE 69923577T3
- Authority
- DE
- Germany
- Prior art keywords
- laser
- resonator
- radiation
- frequency
- reinforcing structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 71
- 238000006243 chemical reaction Methods 0.000 title description 4
- 239000013078 crystal Substances 0.000 claims abstract description 40
- 230000005855 radiation Effects 0.000 claims description 58
- 230000003014 reinforcing effect Effects 0.000 claims description 24
- 230000003287 optical effect Effects 0.000 claims description 17
- 239000000203 mixture Substances 0.000 claims description 9
- 230000010355 oscillation Effects 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- 238000005086 pumping Methods 0.000 claims description 6
- 125000006850 spacer group Chemical group 0.000 claims description 5
- 238000002310 reflectometry Methods 0.000 description 8
- 230000001965 increasing effect Effects 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 4
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 4
- 230000003321 amplification Effects 0.000 description 4
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000003199 nucleic acid amplification method Methods 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000002787 reinforcement Effects 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 201000009310 astigmatism Diseases 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000009191 jumping Effects 0.000 description 1
- VCZFPTGOQQOZGI-UHFFFAOYSA-N lithium bis(oxoboranyloxy)borinate Chemical compound [Li+].[O-]B(OB=O)OB=O VCZFPTGOQQOZGI-UHFFFAOYSA-N 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- UKDIAJWKFXFVFG-UHFFFAOYSA-N potassium;oxido(dioxo)niobium Chemical compound [K+].[O-][Nb](=O)=O UKDIAJWKFXFVFG-UHFFFAOYSA-N 0.000 description 1
- WYOHGPUPVHHUGO-UHFFFAOYSA-K potassium;oxygen(2-);titanium(4+);phosphate Chemical compound [O-2].[K+].[Ti+4].[O-]P([O-])([O-])=O WYOHGPUPVHHUGO-UHFFFAOYSA-K 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/041—Optical pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
- H01S3/082—Construction or shape of optical resonators or components thereof comprising three or more reflectors defining a plurality of resonators, e.g. for mode selection or suppression
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
- H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
- H01S3/1083—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering using parametric generation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
- H01S3/109—Frequency multiplication, e.g. harmonic generation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18383—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with periodic active regions at nodes or maxima of light intensity
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Lasers (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US179022 | 1998-10-26 | ||
| US09/179,022 US5991318A (en) | 1998-10-26 | 1998-10-26 | Intracavity frequency-converted optically-pumped semiconductor laser |
| PCT/US1999/022960 WO2000025399A1 (en) | 1998-10-26 | 1999-09-30 | Intracavity frequency-converted optically-pumped semiconductor l aser |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE69923577D1 DE69923577D1 (de) | 2005-03-10 |
| DE69923577T2 DE69923577T2 (de) | 2006-02-09 |
| DE69923577T3 true DE69923577T3 (de) | 2009-05-14 |
Family
ID=22654904
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69923577T Expired - Lifetime DE69923577T3 (de) | 1998-10-26 | 1999-09-30 | Optisch gepumpter halbleiterlaser mit resonatorinterner frequenzumwandlung |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US5991318A (enExample) |
| EP (1) | EP1125350B2 (enExample) |
| JP (1) | JP2002528921A (enExample) |
| AT (1) | ATE288631T1 (enExample) |
| DE (1) | DE69923577T3 (enExample) |
| WO (1) | WO2000025399A1 (enExample) |
Families Citing this family (82)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6373868B1 (en) | 1993-05-28 | 2002-04-16 | Tong Zhang | Single-mode operation and frequency conversions for diode-pumped solid-state lasers |
| US6327293B1 (en) * | 1998-08-12 | 2001-12-04 | Coherent, Inc. | Optically-pumped external-mirror vertical-cavity semiconductor-laser |
| US6285702B1 (en) * | 1999-03-05 | 2001-09-04 | Coherent, Inc. | High-power external-cavity optically-pumped semiconductor laser |
| US6480516B1 (en) * | 1999-03-31 | 2002-11-12 | Japan As Represented By Secretary Of Agency Of Industrial Science And Technology | Surface semiconductor optical amplifier with transparent substrate |
| US6198756B1 (en) * | 1999-04-15 | 2001-03-06 | Coherent, Inc. | CW far-UV laser system with two active resonators |
| DE19934638B4 (de) * | 1999-07-23 | 2004-07-08 | Jenoptik Ldt Gmbh | Modensynchronisierter Festkörperlaser mit mindestens einem konkaven Faltungsspiegel |
| US6795477B1 (en) | 1999-08-12 | 2004-09-21 | Cortek Inc. | Method for modulating an optically pumped, tunable vertical cavity surface emitting laser (VCSEL) |
| WO2001013481A1 (en) * | 1999-08-12 | 2001-02-22 | Coretek, Inc. | Method for modulating an optically pumped, tunable vertical cavi ty surface emitting laser (vcsel) |
| US6693941B1 (en) * | 1999-09-10 | 2004-02-17 | Fuji Photo Film Co., Ltd. | Semiconductor laser apparatus |
| US6393038B1 (en) | 1999-10-04 | 2002-05-21 | Sandia Corporation | Frequency-doubled vertical-external-cavity surface-emitting laser |
| US6370168B1 (en) * | 1999-10-20 | 2002-04-09 | Coherent, Inc. | Intracavity frequency-converted optically-pumped semiconductor laser |
| US6424669B1 (en) | 1999-10-29 | 2002-07-23 | E20 Communications, Inc. | Integrated optically pumped vertical cavity surface emitting laser |
| AU2470301A (en) | 1999-10-29 | 2001-05-08 | E20 Communications, Inc. | Modulated integrated optically pumped vertical cavity surface emitting lasers |
| US6456424B1 (en) * | 2000-05-17 | 2002-09-24 | Lightwave Electronics Corporation | Noise suppression using pump-resonant optical parametric oscillation |
| DE10108079A1 (de) * | 2000-05-30 | 2002-09-12 | Osram Opto Semiconductors Gmbh | Optisch gepumpte oberflächenemittierende Halbleiterlaservorrichtung und Verfahren zu deren Herstellung |
| DE10026734A1 (de) * | 2000-05-30 | 2001-12-13 | Osram Opto Semiconductors Gmbh | Optisch gepumpte oberflächenemittierende Halbleiterlaservorrichtung und Verfahren zu deren Herstellung |
| WO2001095445A2 (en) * | 2000-06-02 | 2001-12-13 | Coherent, Inc. | Optically-pumped semiconductor laser with output coupled to optical fiber |
| US6628696B2 (en) * | 2001-01-19 | 2003-09-30 | Siros Technologies, Inc. | Multi-channel DWDM transmitter based on a vertical cavity surface emitting laser |
| WO2002069462A1 (en) * | 2001-02-15 | 2002-09-06 | Aculight Corporation | External frequency conversion of surface-emitting diode lasers |
| US6556610B1 (en) * | 2001-04-12 | 2003-04-29 | E20 Communications, Inc. | Semiconductor lasers |
| EP1255331A1 (en) * | 2001-05-01 | 2002-11-06 | Coherent, Inc. | CW far-UV laser system with two active resonators |
| US6717964B2 (en) | 2001-07-02 | 2004-04-06 | E20 Communications, Inc. | Method and apparatus for wavelength tuning of optically pumped vertical cavity surface emitting lasers |
| JP3885529B2 (ja) * | 2001-08-06 | 2007-02-21 | ソニー株式会社 | レーザー光発生装置 |
| GB0122670D0 (en) * | 2001-09-20 | 2001-11-14 | Karpushko Fedor V | Intracavity frequency conversion of laser |
| US6507593B1 (en) | 2001-09-24 | 2003-01-14 | Coherent, Inc. | Step-tunable external-cavity surface-emitting semiconductor laser |
| US6693942B2 (en) * | 2001-10-23 | 2004-02-17 | William F. Krupke | Diode-pumped visible wavelength alkali laser |
| US6643311B2 (en) * | 2001-10-23 | 2003-11-04 | William F. Krupke | Diode-pumped alkali laser |
| GB2385459B (en) * | 2001-10-30 | 2005-06-15 | Laser Quantum Ltd | Laser Cavity |
| DE10214120B4 (de) * | 2002-03-28 | 2007-06-06 | Osram Opto Semiconductors Gmbh | Optisch pumpbare oberflächenemittierende Halbleiterlaservorrichtung |
| US6661830B1 (en) * | 2002-10-07 | 2003-12-09 | Coherent, Inc. | Tunable optically-pumped semiconductor laser including a polarizing resonator mirror |
| US20040076204A1 (en) | 2002-10-16 | 2004-04-22 | Kruschwitz Brian E. | External cavity organic laser |
| DE10312742B4 (de) * | 2002-11-29 | 2005-09-29 | Osram Opto Semiconductors Gmbh | Optisch gepumpte Halbleiterlaservorrichtung |
| DE10260183A1 (de) * | 2002-12-20 | 2004-07-15 | Osram Opto Semiconductors Gmbh | Vertikal emittierender, optisch gepumpter Halbleiterlaser mit externem Resonator |
| US7088749B2 (en) * | 2003-01-06 | 2006-08-08 | Miyachi Unitek Corporation | Green welding laser |
| JP2004253800A (ja) * | 2003-02-19 | 2004-09-09 | Osram Opto Semiconductors Gmbh | レーザーパルス形成用レーザー装置 |
| US6940880B2 (en) * | 2003-03-11 | 2005-09-06 | Coherent, Inc. | Optically pumped semiconductor ring laser |
| DE10339980B4 (de) * | 2003-08-29 | 2011-01-05 | Osram Opto Semiconductors Gmbh | Halbleiterlaser mit reduzierter Verlustwärme |
| DE102004011456A1 (de) * | 2004-01-30 | 2005-08-18 | Osram Opto Semiconductors Gmbh | Oberflächenemittierender Halbleiterlaser mit einem Interferenzfilter |
| EP1560306B1 (de) * | 2004-01-30 | 2014-11-19 | OSRAM Opto Semiconductors GmbH | Oberflächenemittierender Halbleiterlaser mit einem Interferenzfilter |
| DE102004012014B4 (de) * | 2004-03-11 | 2009-09-10 | Osram Opto Semiconductors Gmbh | Scheibenlaser mit einer Pumpanordnung |
| US20060029112A1 (en) * | 2004-03-31 | 2006-02-09 | Young Ian A | Surface emitting laser with an integrated absorber |
| DE102004036963A1 (de) * | 2004-05-28 | 2005-12-22 | Osram Opto Semiconductors Gmbh | Optisch gepumpte oberflächenemittierende Halbleiterlaser-Vorrichtung |
| KR101015499B1 (ko) | 2004-06-19 | 2011-02-16 | 삼성전자주식회사 | 복수의 파장을 발생시키는 반도체 레이저 소자 및 상기반도체 레이저 소자용 레이저 펌핑부 |
| EP1792373B1 (de) * | 2004-09-22 | 2009-03-04 | OSRAM Opto Semiconductors GmbH | Seitlich optisch gepumpter oberflächenemittierender halbleiterlaser mit einer integrierten wärmesenke |
| US20060083284A1 (en) | 2004-10-14 | 2006-04-20 | Barbara Paldus | Method for increasing the dynamic range of a cavity enhanced optical spectrometer |
| US7244028B2 (en) * | 2004-12-14 | 2007-07-17 | Coherent, Inc. | Laser illuminated projection displays |
| US7355657B2 (en) * | 2004-12-14 | 2008-04-08 | Coherent, Inc. | Laser illuminated projection displays |
| US7413311B2 (en) * | 2005-09-29 | 2008-08-19 | Coherent, Inc. | Speckle reduction in laser illuminated projection displays having a one-dimensional spatial light modulator |
| DE102005058237A1 (de) * | 2005-09-30 | 2007-04-05 | Osram Opto Semiconductors Gmbh | Oberflächenemittierendes Halbleiterlaser-Bauelement und optische Projektionsvorrichtung mit solch einem oberflächenemittierenden Halbleiterlaser-Bauelement |
| KR101100431B1 (ko) | 2005-11-22 | 2011-12-30 | 삼성전자주식회사 | 고효율 2차 조화파 생성 외부 공진기형 면발광 레이저 |
| DE102005058900A1 (de) * | 2005-12-09 | 2007-06-14 | Osram Opto Semiconductors Gmbh | Vertikal emittierender, optisch gepumpter Halbleiterlaser mit externem Resonator |
| DE102006017293A1 (de) * | 2005-12-30 | 2007-07-05 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer optisch pumpbaren Halbleitervorrichtung |
| US20070177638A1 (en) * | 2006-01-27 | 2007-08-02 | Wolf Seelert | Frequency-doubled solid state laser optically pumped by frequency-doubled external-cavity surface-emitting semiconductor laser |
| GB0608805D0 (en) * | 2006-05-04 | 2006-06-14 | Coherent Inc | Method for laterally-coupling frequency-converted laser radiation out of a resonator |
| US7447245B2 (en) * | 2006-06-19 | 2008-11-04 | Coherent, Inc. | Optically pumped semiconductor laser pumped optical parametric oscillator |
| KR101257850B1 (ko) * | 2006-11-22 | 2013-04-24 | 삼성전자주식회사 | 고효율 레이저칩 및 이를 이용한 외부 공진기형 면발광레이저 |
| US7869471B1 (en) * | 2007-07-12 | 2011-01-11 | Photonics Industries International, Inc. | Tunable OPO laser |
| US20090161703A1 (en) * | 2007-12-20 | 2009-06-25 | Wolf Seelert | SUM-FREQUENCY-MIXING Pr:YLF LASER APPARATUS WITH DEEP-UV OUTPUT |
| DE102008009110A1 (de) * | 2008-02-14 | 2009-08-20 | Osram Opto Semiconductors Gmbh | Halbleiterlasermodul |
| US20090285248A1 (en) * | 2008-05-13 | 2009-11-19 | Klashtech-Karpushko Laser Technologies Gmbh | Uv light generation by frequency conversion of radiation of a ruby laser pumped with a second harmonic of a solid-state laser |
| DE102008030254A1 (de) | 2008-06-25 | 2009-12-31 | Osram Opto Semiconductors Gmbh | Halbleiterlasermodul |
| US20130223846A1 (en) | 2009-02-17 | 2013-08-29 | Trilumina Corporation | High speed free-space optical communications |
| US8995485B2 (en) * | 2009-02-17 | 2015-03-31 | Trilumina Corp. | High brightness pulsed VCSEL sources |
| US10244181B2 (en) | 2009-02-17 | 2019-03-26 | Trilumina Corp. | Compact multi-zone infrared laser illuminator |
| US8995493B2 (en) | 2009-02-17 | 2015-03-31 | Trilumina Corp. | Microlenses for multibeam arrays of optoelectronic devices for high frequency operation |
| US10038304B2 (en) | 2009-02-17 | 2018-07-31 | Trilumina Corp. | Laser arrays for variable optical properties |
| US20100254412A1 (en) * | 2009-04-07 | 2010-10-07 | Jacques Gollier | Phase Modulation In A Frequency-Converted Laser Source Comprising An External Optical Feedback Component |
| US8045593B2 (en) * | 2009-04-07 | 2011-10-25 | Corning Incorporated | Method of controlling a frequency-converted laser source comprising an external optical feedback component |
| US7991026B2 (en) * | 2009-06-19 | 2011-08-02 | Coherent, Inc. | Intracavity frequency-converted optically-pumped semiconductor laser with red-light output |
| US8243765B2 (en) * | 2009-06-19 | 2012-08-14 | Coherent, Inc. | Intracavity frequency-converted optically-pumped semiconductor optical parametric oscillator |
| CN102959811B (zh) * | 2009-12-19 | 2016-06-29 | 三流明公司 | 用于组合用于数字输出的激光器阵列的系统和方法 |
| US8979338B2 (en) | 2009-12-19 | 2015-03-17 | Trilumina Corp. | System for combining laser array outputs into a single beam carrying digital data |
| US11095365B2 (en) | 2011-08-26 | 2021-08-17 | Lumentum Operations Llc | Wide-angle illuminator module |
| JP6136284B2 (ja) | 2012-03-13 | 2017-05-31 | 株式会社リコー | 半導体積層体及び面発光レーザ素子 |
| US9190798B2 (en) | 2014-01-09 | 2015-11-17 | Coherent, Inc. | Optical parametric oscillator with embedded resonator |
| JP2015196163A (ja) | 2014-03-31 | 2015-11-09 | 三菱重工業株式会社 | 加工装置及び加工方法 |
| TWI622188B (zh) * | 2016-12-08 | 2018-04-21 | 錼創科技股份有限公司 | 發光二極體晶片 |
| WO2018108251A1 (en) | 2016-12-13 | 2018-06-21 | Vexlum Oy | Laser |
| US10177524B2 (en) | 2017-05-23 | 2019-01-08 | Coherent, Inc. | Intra-cavity frequency-converted optically-pumped semiconductor laser |
| CN109873291A (zh) * | 2019-04-10 | 2019-06-11 | 山西大学 | 一种可输出三种波长的全固态激光器 |
| WO2024047442A1 (en) * | 2022-08-29 | 2024-03-07 | Pavilion Integration Corporation | A laser with no anti-reflection coating for the lasing wavelength |
| CN117578183A (zh) * | 2023-12-12 | 2024-02-20 | 重庆师范大学 | 一种高性能单频激光器 |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5248068B2 (enExample) * | 1974-05-20 | 1977-12-07 | ||
| DE2522338C3 (de) * | 1974-05-20 | 1979-11-29 | Hitachi, Ltd., Tokio | Vorrichtung zur Erzeugung von kohärentem licht |
| US4656635A (en) † | 1985-05-01 | 1987-04-07 | Spectra-Physics, Inc. | Laser diode pumped solid state laser |
| JP3066966B2 (ja) † | 1988-02-29 | 2000-07-17 | ソニー株式会社 | レーザ光源 |
| JPH01274487A (ja) * | 1988-04-27 | 1989-11-02 | Hamamatsu Photonics Kk | 光波長変換装置 |
| US5050179A (en) * | 1989-04-20 | 1991-09-17 | Massachusetts Institute Of Technology | External cavity semiconductor laser |
| JPH03234073A (ja) * | 1990-02-09 | 1991-10-18 | Toshiba Corp | 高調波発生用レーザ装置 |
| US5331002A (en) * | 1990-04-19 | 1994-07-19 | Merrell Dow Pharmaceuticals Inc. | 5-aryl-4-alkyl-3H-1,2,4-triazole-3-thiones useful as memory enhancers |
| US5131002A (en) * | 1991-02-12 | 1992-07-14 | Massachusetts Institute Of Technology | External cavity semiconductor laser system |
| US5315433A (en) † | 1991-02-28 | 1994-05-24 | Fuji Photo Film Co., Ltd. | Optical wavelength converting apparatus |
| US5257274A (en) * | 1991-05-10 | 1993-10-26 | Alliedsignal Inc. | High power laser employing fiber optic delivery means |
| US5289485A (en) * | 1991-09-10 | 1994-02-22 | Micracor, Inc. | Multi-element optically pumped external cavity laser system |
| JPH05275785A (ja) † | 1992-03-28 | 1993-10-22 | Sony Corp | レーザ光発生光学装置 |
| DE4228862A1 (de) * | 1992-08-29 | 1994-03-03 | Zeiss Carl Fa | Laseranordnung zur Erzeugung von UV-Strahlung |
| US5384797A (en) * | 1992-09-21 | 1995-01-24 | Sdl, Inc. | Monolithic multi-wavelength laser diode array |
| US5375138A (en) † | 1992-09-25 | 1994-12-20 | International Business Machines Corporation | Optical cavities for lasers |
| JPH06265955A (ja) * | 1993-03-15 | 1994-09-22 | Mitsui Petrochem Ind Ltd | 波長変換素子 |
| JPH06283794A (ja) † | 1993-03-25 | 1994-10-07 | Fuji Photo Film Co Ltd | レーザーダイオードポンピング固体レーザー |
| DE4315580A1 (de) * | 1993-05-11 | 1994-11-17 | Fraunhofer Ges Forschung | Anordnung aus Laserdioden und einem Kühlsystem sowie Verfahren zu deren Herstellung |
| JP3329066B2 (ja) * | 1993-05-18 | 2002-09-30 | 松下電器産業株式会社 | レーザ装置 |
| US5436920A (en) * | 1993-05-18 | 1995-07-25 | Matsushita Electric Industrial Co., Ltd. | Laser device |
| JPH0799357A (ja) * | 1993-09-28 | 1995-04-11 | Hitachi Metals Ltd | 半導体レーザ励起固体レーザ装置 |
| US5638388A (en) † | 1995-02-04 | 1997-06-10 | Spectra-Physics Lasers, Inc. | Diode pumped, multi axial mode intracavity doubled laser |
| US5461637A (en) * | 1994-03-16 | 1995-10-24 | Micracor, Inc. | High brightness, vertical cavity semiconductor lasers |
| JPH0895105A (ja) * | 1994-07-26 | 1996-04-12 | Hitachi Metals Ltd | 第二高調波発生装置およびレーザプリンタ装置 |
| FR2751467B1 (fr) * | 1996-07-17 | 1998-10-02 | Commissariat Energie Atomique | Procede d'assemblage de deux structures et dispositif obtenu par le procede. applications aux microlasers |
| US6243407B1 (en) * | 1997-03-21 | 2001-06-05 | Novalux, Inc. | High power laser devices |
-
1998
- 1998-10-26 US US09/179,022 patent/US5991318A/en not_active Expired - Lifetime
-
1999
- 1999-08-20 US US09/377,942 patent/US6167068A/en not_active Expired - Lifetime
- 1999-09-30 EP EP99950116A patent/EP1125350B2/en not_active Expired - Lifetime
- 1999-09-30 JP JP2000578884A patent/JP2002528921A/ja active Pending
- 1999-09-30 WO PCT/US1999/022960 patent/WO2000025399A1/en not_active Ceased
- 1999-09-30 DE DE69923577T patent/DE69923577T3/de not_active Expired - Lifetime
- 1999-09-30 AT AT99950116T patent/ATE288631T1/de not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| US6167068A (en) | 2000-12-26 |
| ATE288631T1 (de) | 2005-02-15 |
| JP2002528921A (ja) | 2002-09-03 |
| US5991318A (en) | 1999-11-23 |
| DE69923577D1 (de) | 2005-03-10 |
| DE69923577T2 (de) | 2006-02-09 |
| WO2000025399A1 (en) | 2000-05-04 |
| EP1125350B2 (en) | 2008-12-03 |
| EP1125350A1 (en) | 2001-08-22 |
| EP1125350B1 (en) | 2005-02-02 |
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