JP2004253800A - レーザーパルス形成用レーザー装置 - Google Patents
レーザーパルス形成用レーザー装置 Download PDFInfo
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- JP2004253800A JP2004253800A JP2004040268A JP2004040268A JP2004253800A JP 2004253800 A JP2004253800 A JP 2004253800A JP 2004040268 A JP2004040268 A JP 2004040268A JP 2004040268 A JP2004040268 A JP 2004040268A JP 2004253800 A JP2004253800 A JP 2004253800A
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- H—ELECTRICITY
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1106—Mode locking
- H01S3/1112—Passive mode locking
- H01S3/1115—Passive mode locking using intracavity saturable absorbers
- H01S3/1118—Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]; Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based
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- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0657—Mode locking, i.e. generation of pulses at a frequency corresponding to a roundtrip in the cavity
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- H01S5/00—Semiconductor lasers
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
- H01S3/0813—Configuration of resonator
- H01S3/0816—Configuration of resonator having 4 reflectors, e.g. Z-shaped resonators
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
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- H01S5/00—Semiconductor lasers
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- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4056—Edge-emitting structures emitting light in more than one direction
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Abstract
【解決手段】レーザー装置の外部共振器に少なくとも1つのモードカプラが配置されている。
【選択図】図1
Description
2 ヒートシンク
3 ポンピング放射源
4 活性層
5 鏡面層
6 SESAM
7 出力結合鏡
8 コンボリューションミラー
9 ミラー
10 半導体吸収体
11 ビーム軸線
12 ビーム径
24 ポンピング放射
Claims (18)
- 外部共振器を有する光ポンピング半導体レーザー(1)を備えた
レーザーパルス形成用レーザー装置において
外部共振器に少なくとも1つのモードカプラ(10)が配置されている
ことを特徴とするレーザーパルス形成用レーザー装置。 - 半導体レーザー(1)は外部に配置されたポンピング放射源(3)により光ポンピングされる、請求項1記載の装置。
- 半導体レーザー(1)は自身の内部にモノリシックに組み込まれたポンピング放射源(3a,3b)によって光ポンピングされる、請求項1記載の装置。
- モードカプラ(10)は受動モードカプラである、請求項1記載の装置。
- モードカプラ(10)は可飽和吸収体である、請求項1記載の装置。
- モードカプラ(10)は半導体材料から成る可飽和吸収体である、請求項5記載の装置。
- モードカプラ(10)は半導体レーザー(1)内にモノリシックに組み込まれている、請求項1記載の装置。
- モードカプラ(10)は共振器ミラー(9)と組み合わされている、請求項1記載の装置。
- 共振器は位相補償装置を有する、請求項1記載の装置。
- 共振器に位相補償装置が後置されている、請求項1記載の装置。
- 位相補償装置は少なくとも1つのプリズム(14〜17)、格子、リニアミラーまたはチャーピングミラー(19)、レンズおよび/または光ファイバを有する、請求項9または10記載の装置。
- 共振器はチャーピングコンボリューションミラー(19)を有する、請求項11記載の装置。
- 共振器は基本波長λ1のレーザーパルスを形成する第1の共振器分岐と基本波長λ2のレーザーパルスを形成する第2の共振器分岐とを有する、請求項1記載の装置。
- 基本波長λ1のレーザーパルスと基本波長λ2のレーザーパルスとは相互にフェーズロック結合されている、請求項13記載の装置。
- レーザーパルスは100psよりも小さいパルス持続時間を有しており、有利には20psよりも小さいパルス持続時間を有しており、特に有利には1psよりも小さいパルス持続時間を有している、請求項1記載の装置。
- 当該のレーザー装置はレーザー発振器である、請求項1記載の装置。
- 当該のレーザー装置はレーザー増幅器である、請求項1記載の装置。
- レーザー増幅器はCPA増幅器である、請求項17記載の装置。
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Application Number | Priority Date | Filing Date | Title |
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DE10306997 | 2003-02-19 |
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JP2004253800A true JP2004253800A (ja) | 2004-09-09 |
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JP2004040268A Pending JP2004253800A (ja) | 2003-02-19 | 2004-02-17 | レーザーパルス形成用レーザー装置 |
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US (1) | US20040190567A1 (ja) |
JP (1) | JP2004253800A (ja) |
DE (1) | DE102004007881A1 (ja) |
Cited By (8)
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JP2014220404A (ja) * | 2013-05-09 | 2014-11-20 | ソニー株式会社 | 半導体レーザ装置組立体 |
JP2015511772A (ja) * | 2012-03-29 | 2015-04-20 | ソーラス テクノロジーズ リミテッドSolus Technologies Limited | セルフモード同期半導体ディスクレーザ(sdl) |
JP2015515132A (ja) * | 2012-03-29 | 2015-05-21 | ソーラス テクノロジーズ リミテッドSolus Technologies Limited | セルフモード同期半導体ディスクレーザ(sdl) |
CN104852278A (zh) * | 2014-02-18 | 2015-08-19 | 索尼公司 | 半导体激光设备组件 |
JP2016535934A (ja) * | 2013-10-29 | 2016-11-17 | ソーラス テクノロジーズ リミテッドSolus Technologies Limited | モード同期半導体ディスクレーザ(sdl) |
JP2016540387A (ja) * | 2013-12-10 | 2016-12-22 | ソーラス テクノロジーズ リミテッドSolus Technologies Limited | 改良型自動モード・ロック半導体ディスクレーザ(sdl) |
JP2017511607A (ja) * | 2014-04-18 | 2017-04-20 | ソーラス テクノロジーズ リミテッドSolus Technologies Limited | 改良型受動的モードロック同期半導体ディスクレーザ(sdl) |
JP2017514312A (ja) * | 2014-04-28 | 2017-06-01 | ソーラス テクノロジーズ リミテッドSolus Technologies Limited | 光増幅器 |
Families Citing this family (11)
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US20050190810A1 (en) * | 2004-02-27 | 2005-09-01 | Stuart Butterworth | Contact-bonded optically pumped semiconductor laser structure |
DE102005056949B4 (de) * | 2005-09-30 | 2013-08-22 | Osram Opto Semiconductors Gmbh | Optisch gepumpter oberflächenemittierender Halbleiterlaser und optische Projektionsvorrichtung mit solch einem Halbleiterlaser |
DE102006024220A1 (de) | 2006-04-13 | 2007-10-18 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement |
US20130294467A1 (en) * | 2007-10-15 | 2013-11-07 | Jerome V. Moloney | Laser-based source for terahertz and millimeter waves |
US7894493B2 (en) * | 2008-10-02 | 2011-02-22 | Coherent, Inc. | Ultrashort seed-pulse generating laser with integral pulse shaping |
EP2267430A1 (de) * | 2009-06-24 | 2010-12-29 | Masterrind GmbH | Vorrichtung und Verfahren zur Selektion von Partikeln |
DE102010042909A1 (de) * | 2010-10-26 | 2012-04-26 | Robert Bosch Gmbh | Laserzündkerze für eine Brennkraftmaschine und Betriebsverfahren hierfür |
JP2015507348A (ja) * | 2011-11-09 | 2015-03-05 | マッコーリー ユニバーシティー | 波長可変型のvecselラマンレーザ |
JP6391904B2 (ja) * | 2011-11-11 | 2018-09-19 | ソニー株式会社 | 半導体レーザ装置組立体 |
US9231373B2 (en) | 2012-09-10 | 2016-01-05 | The Arizona Board Of Regents On Behalf Of The University Of Arizona | Multi-chip VECSEL-based laser tunable independently at multiple wavelengths |
DE102016013510B4 (de) * | 2016-04-18 | 2019-03-14 | Kastriot Merlaku | Scheinwerfer-System für Fahrzeuge aller Art, mit mindestens einem Leuchtmittel und eine Kamera für die Fahrbahn-Erfassung |
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- 2004-02-17 JP JP2004040268A patent/JP2004253800A/ja active Pending
- 2004-02-18 DE DE200410007881 patent/DE102004007881A1/de not_active Ceased
- 2004-02-19 US US10/783,143 patent/US20040190567A1/en not_active Abandoned
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WO2001059895A1 (en) * | 2000-02-11 | 2001-08-16 | Gigatera Ag | Passively mode-locked optically pumped semiconductor external-cavity surface-emitting laser |
Cited By (12)
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JP2015511772A (ja) * | 2012-03-29 | 2015-04-20 | ソーラス テクノロジーズ リミテッドSolus Technologies Limited | セルフモード同期半導体ディスクレーザ(sdl) |
JP2015515132A (ja) * | 2012-03-29 | 2015-05-21 | ソーラス テクノロジーズ リミテッドSolus Technologies Limited | セルフモード同期半導体ディスクレーザ(sdl) |
JP2014220404A (ja) * | 2013-05-09 | 2014-11-20 | ソニー株式会社 | 半導体レーザ装置組立体 |
US9780526B2 (en) | 2013-05-09 | 2017-10-03 | Sony Corporation | Semiconductor-laser-device assembly |
JP2016535934A (ja) * | 2013-10-29 | 2016-11-17 | ソーラス テクノロジーズ リミテッドSolus Technologies Limited | モード同期半導体ディスクレーザ(sdl) |
JP2016540387A (ja) * | 2013-12-10 | 2016-12-22 | ソーラス テクノロジーズ リミテッドSolus Technologies Limited | 改良型自動モード・ロック半導体ディスクレーザ(sdl) |
CN104852278A (zh) * | 2014-02-18 | 2015-08-19 | 索尼公司 | 半导体激光设备组件 |
JP2015153979A (ja) * | 2014-02-18 | 2015-08-24 | ソニー株式会社 | 半導体レーザ素子組立体 |
US9735538B2 (en) | 2014-02-18 | 2017-08-15 | Sony Corporation | Semiconductor laser device assembly |
JP2017511607A (ja) * | 2014-04-18 | 2017-04-20 | ソーラス テクノロジーズ リミテッドSolus Technologies Limited | 改良型受動的モードロック同期半導体ディスクレーザ(sdl) |
JP6997518B2 (ja) | 2014-04-18 | 2022-01-17 | ソーラス テクノロジーズ リミテッド | 改良型受動的モードロック同期半導体ディスクレーザ(sdl) |
JP2017514312A (ja) * | 2014-04-28 | 2017-06-01 | ソーラス テクノロジーズ リミテッドSolus Technologies Limited | 光増幅器 |
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