JP2002517089A - 浅いトレンチ分離のための自己平坦化絶縁層を形成する方法 - Google Patents

浅いトレンチ分離のための自己平坦化絶縁層を形成する方法

Info

Publication number
JP2002517089A
JP2002517089A JP2000551427A JP2000551427A JP2002517089A JP 2002517089 A JP2002517089 A JP 2002517089A JP 2000551427 A JP2000551427 A JP 2000551427A JP 2000551427 A JP2000551427 A JP 2000551427A JP 2002517089 A JP2002517089 A JP 2002517089A
Authority
JP
Japan
Prior art keywords
trench
substrate
processing chamber
cvd
precursor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000551427A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002517089A5 (https=
Inventor
ファブリーク ジガール，
フレデリク ジェラルド，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2002517089A publication Critical patent/JP2002517089A/ja
Publication of JP2002517089A5 publication Critical patent/JP2002517089A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2043—Photolithographic processes using an anti-reflective coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0143—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations comprising concurrently refilling multiple trenches having different shapes or dimensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2

Landscapes

  • Formation Of Insulating Films (AREA)
  • Element Separation (AREA)
JP2000551427A 1998-05-22 1999-05-10 浅いトレンチ分離のための自己平坦化絶縁層を形成する方法 Pending JP2002517089A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP98401232A EP0959496B1 (en) 1998-05-22 1998-05-22 Methods for forming self-planarized dielectric layer for shallow trench isolation
EP98401232.8 1998-05-22
PCT/IB1999/000835 WO1999062108A2 (en) 1998-05-22 1999-05-10 Methods for forming self-planarized dielectric layer for shallow trench isolation

Publications (2)

Publication Number Publication Date
JP2002517089A true JP2002517089A (ja) 2002-06-11
JP2002517089A5 JP2002517089A5 (https=) 2009-10-22

Family

ID=8235378

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000551427A Pending JP2002517089A (ja) 1998-05-22 1999-05-10 浅いトレンチ分離のための自己平坦化絶縁層を形成する方法

Country Status (7)

Country Link
US (1) US6733955B1 (https=)
EP (1) EP0959496B1 (https=)
JP (1) JP2002517089A (https=)
KR (2) KR100692090B1 (https=)
DE (1) DE69835276T2 (https=)
TW (1) TW413885B (https=)
WO (1) WO1999062108A2 (https=)

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JP2007110043A (ja) * 2005-10-17 2007-04-26 Nec Electronics Corp 半導体装置の製造方法
JP2008182199A (ja) * 2006-12-07 2008-08-07 Applied Materials Inc 誘電ギャップ充填用のマルチステップ堆積・エッチング・堆積（ｄｅｐ−ｅｔｃｈ−ｄｅｐ）高密度プラズマ化学気相堆積プロセス
JP2008235857A (ja) * 2006-12-07 2008-10-02 Applied Materials Inc 薄膜プロセスの方法

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US6733955B1 (en) 2004-05-11
WO1999062108A2 (en) 1999-12-02
KR20010043762A (ko) 2001-05-25
KR20060090734A (ko) 2006-08-14
TW413885B (en) 2000-12-01
EP0959496A2 (en) 1999-11-24
KR100692090B1 (ko) 2007-03-12
KR100687367B1 (ko) 2007-02-26
EP0959496A3 (en) 1999-12-15
WO1999062108A3 (en) 2000-01-27

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