DE69835276T2 - Verfahren zur Herstellung einer selbst-planarisierten dielektrischen Schicht für eine seichte Grabenisolation - Google Patents

Verfahren zur Herstellung einer selbst-planarisierten dielektrischen Schicht für eine seichte Grabenisolation Download PDF

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Publication number
DE69835276T2
DE69835276T2 DE69835276T DE69835276T DE69835276T2 DE 69835276 T2 DE69835276 T2 DE 69835276T2 DE 69835276 T DE69835276 T DE 69835276T DE 69835276 T DE69835276 T DE 69835276T DE 69835276 T2 DE69835276 T2 DE 69835276T2
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DE
Germany
Prior art keywords
trench
layer
substrate
cvd
chamber
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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DE69835276T
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German (de)
English (en)
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DE69835276D1 (de
Inventor
Fabrice Geiger
Frederic Gaillard
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Applied Materials Inc
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Applied Materials Inc
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Publication of DE69835276T2 publication Critical patent/DE69835276T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2043—Photolithographic processes using an anti-reflective coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0143—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations comprising concurrently refilling multiple trenches having different shapes or dimensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2

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  • Formation Of Insulating Films (AREA)
  • Element Separation (AREA)
DE69835276T 1998-05-22 1998-05-22 Verfahren zur Herstellung einer selbst-planarisierten dielektrischen Schicht für eine seichte Grabenisolation Expired - Fee Related DE69835276T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP98401232A EP0959496B1 (en) 1998-05-22 1998-05-22 Methods for forming self-planarized dielectric layer for shallow trench isolation

Publications (2)

Publication Number Publication Date
DE69835276D1 DE69835276D1 (de) 2006-08-31
DE69835276T2 true DE69835276T2 (de) 2007-07-12

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
DE69835276T Expired - Fee Related DE69835276T2 (de) 1998-05-22 1998-05-22 Verfahren zur Herstellung einer selbst-planarisierten dielektrischen Schicht für eine seichte Grabenisolation

Country Status (7)

Country Link
US (1) US6733955B1 (https=)
EP (1) EP0959496B1 (https=)
JP (1) JP2002517089A (https=)
KR (2) KR100692090B1 (https=)
DE (1) DE69835276T2 (https=)
TW (1) TW413885B (https=)
WO (1) WO1999062108A2 (https=)

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Also Published As

Publication number Publication date
JP2002517089A (ja) 2002-06-11
DE69835276D1 (de) 2006-08-31
EP0959496B1 (en) 2006-07-19
US6733955B1 (en) 2004-05-11
WO1999062108A2 (en) 1999-12-02
KR20010043762A (ko) 2001-05-25
KR20060090734A (ko) 2006-08-14
TW413885B (en) 2000-12-01
EP0959496A2 (en) 1999-11-24
KR100692090B1 (ko) 2007-03-12
KR100687367B1 (ko) 2007-02-26
EP0959496A3 (en) 1999-12-15
WO1999062108A3 (en) 2000-01-27

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