TW413885B - Methods for forming self-planarized dielectric layer for shallow trench isolation - Google Patents

Methods for forming self-planarized dielectric layer for shallow trench isolation Download PDF

Info

Publication number
TW413885B
TW413885B TW088108479A TW88108479A TW413885B TW 413885 B TW413885 B TW 413885B TW 088108479 A TW088108479 A TW 088108479A TW 88108479 A TW88108479 A TW 88108479A TW 413885 B TW413885 B TW 413885B
Authority
TW
Taiwan
Prior art keywords
substrate
trench
patent application
scope
item
Prior art date
Application number
TW088108479A
Other languages
English (en)
Chinese (zh)
Inventor
Fabrice Geiger
Frederic Gaillard
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of TW413885B publication Critical patent/TW413885B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2043—Photolithographic processes using an anti-reflective coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0143—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations comprising concurrently refilling multiple trenches having different shapes or dimensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2

Landscapes

  • Formation Of Insulating Films (AREA)
  • Element Separation (AREA)
TW088108479A 1998-05-22 1999-07-01 Methods for forming self-planarized dielectric layer for shallow trench isolation TW413885B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP98401232A EP0959496B1 (en) 1998-05-22 1998-05-22 Methods for forming self-planarized dielectric layer for shallow trench isolation

Publications (1)

Publication Number Publication Date
TW413885B true TW413885B (en) 2000-12-01

Family

ID=8235378

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088108479A TW413885B (en) 1998-05-22 1999-07-01 Methods for forming self-planarized dielectric layer for shallow trench isolation

Country Status (7)

Country Link
US (1) US6733955B1 (https=)
EP (1) EP0959496B1 (https=)
JP (1) JP2002517089A (https=)
KR (2) KR100692090B1 (https=)
DE (1) DE69835276T2 (https=)
TW (1) TW413885B (https=)
WO (1) WO1999062108A2 (https=)

Families Citing this family (104)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000060659A1 (en) * 1999-04-02 2000-10-12 Silicon Valley Group, Thermal Systems Llc Improved trench isolation process to deposit a trench fill oxide prior to sidewall liner oxidation growth
TW439194B (en) * 2000-01-24 2001-06-07 United Microelectronics Corp Manufacturing method of shallow trench isolation region
TW479315B (en) * 2000-10-31 2002-03-11 Applied Materials Inc Continuous depostiton process
JP4989817B2 (ja) * 2000-12-21 2012-08-01 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US6362098B1 (en) 2001-02-28 2002-03-26 Motorola, Inc. Plasma-enhanced chemical vapor deposition (CVD) method to fill a trench in a semiconductor substrate
US7026172B2 (en) * 2001-10-22 2006-04-11 Promos Technologies, Inc. Reduced thickness variation in a material layer deposited in narrow and wide integrated circuit trenches
WO2003043078A2 (en) * 2001-11-13 2003-05-22 Advanced Micro Devices, Inc. Preferential corner rounding of trench structures using post-fill oxidation
US7141483B2 (en) * 2002-09-19 2006-11-28 Applied Materials, Inc. Nitrous oxide anneal of TEOS/ozone CVD for improved gapfill
US7456116B2 (en) * 2002-09-19 2008-11-25 Applied Materials, Inc. Gap-fill depositions in the formation of silicon containing dielectric materials
US7431967B2 (en) * 2002-09-19 2008-10-07 Applied Materials, Inc. Limited thermal budget formation of PMD layers
US20070212850A1 (en) * 2002-09-19 2007-09-13 Applied Materials, Inc. Gap-fill depositions in the formation of silicon containing dielectric materials
US7335609B2 (en) * 2004-08-27 2008-02-26 Applied Materials, Inc. Gap-fill depositions introducing hydroxyl-containing precursors in the formation of silicon containing dielectric materials
US6905940B2 (en) * 2002-09-19 2005-06-14 Applied Materials, Inc. Method using TEOS ramp-up during TEOS/ozone CVD for improved gap-fill
US6828211B2 (en) * 2002-10-01 2004-12-07 Taiwan Semiconductor Manufacturing Co., Ltd. Shallow trench filled with two or more dielectrics for isolation and coupling or for stress control
US20040074516A1 (en) * 2002-10-18 2004-04-22 Hogle Richard A. Sub-atmospheric supply of fluorine to semiconductor process chamber
DE10259728B4 (de) * 2002-12-19 2008-01-17 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Herstellung einer Grabenisolationsstruktur und Verfahren zum Steuern eines Grades an Kantenrundung einer Grabenisolationsstruktur in einem Halbleiterbauelement
KR100454849B1 (ko) * 2002-12-20 2004-11-03 아남반도체 주식회사 반도체 소자의 제조방법
JP4161745B2 (ja) * 2003-03-06 2008-10-08 株式会社デンソー 光学素子およびその製造方法
IL155137A0 (en) * 2003-03-27 2003-10-31 Yissum Res Dev Co A method for generating plant diversity
US7029591B2 (en) * 2003-04-23 2006-04-18 Lsi Logic Corporation Planarization with reduced dishing
US7528051B2 (en) * 2004-05-14 2009-05-05 Applied Materials, Inc. Method of inducing stresses in the channel region of a transistor
US7176105B2 (en) 2004-06-01 2007-02-13 Applied Materials, Inc. Dielectric gap fill with oxide selectively deposited over silicon liner
US20070212847A1 (en) * 2004-08-04 2007-09-13 Applied Materials, Inc. Multi-step anneal of thin films for film densification and improved gap-fill
US7642171B2 (en) * 2004-08-04 2010-01-05 Applied Materials, Inc. Multi-step anneal of thin films for film densification and improved gap-fill
US20060264054A1 (en) * 2005-04-06 2006-11-23 Gutsche Martin U Method for etching a trench in a semiconductor substrate
JP5319868B2 (ja) * 2005-10-17 2013-10-16 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US20070102399A1 (en) * 2005-11-07 2007-05-10 Tokyo Electron Limited Method and apparatus for manufacturing a semiconductor device, control program and computer-readable storage medium
US20070249128A1 (en) * 2006-04-19 2007-10-25 Junjung Kim Ultraviolet (UV) Radiation Treatment Methods for Subatmospheric Chemical Vapor Deposition (SACVD) of Ozone-Tetraethoxysilane (O3-TEOS)
KR100772275B1 (ko) * 2006-05-24 2007-11-01 동부일렉트로닉스 주식회사 반도체 소자 및 그 제조 방법
US7939422B2 (en) * 2006-12-07 2011-05-10 Applied Materials, Inc. Methods of thin film process
US20080142483A1 (en) * 2006-12-07 2008-06-19 Applied Materials, Inc. Multi-step dep-etch-dep high density plasma chemical vapor deposition processes for dielectric gapfills
US20090184402A1 (en) * 2008-01-22 2009-07-23 United Microelectronics Corp. Method of fabricating a shallow trench isolation structure including forming a second liner covering the corner of the trench and first liner.
US8211808B2 (en) 2009-08-31 2012-07-03 Applied Materials, Inc. Silicon-selective dry etch for carbon-containing films
US8404583B2 (en) * 2010-03-12 2013-03-26 Applied Materials, Inc. Conformality of oxide layers along sidewalls of deep vias
US8796106B2 (en) * 2010-03-30 2014-08-05 Stmicroelectronics S.R.L. Isolation trenches
US9324576B2 (en) 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
US8741778B2 (en) 2010-12-14 2014-06-03 Applied Materials, Inc. Uniform dry etch in two stages
US8771539B2 (en) 2011-02-22 2014-07-08 Applied Materials, Inc. Remotely-excited fluorine and water vapor etch
US8771536B2 (en) 2011-08-01 2014-07-08 Applied Materials, Inc. Dry-etch for silicon-and-carbon-containing films
US8679982B2 (en) 2011-08-26 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and oxygen
US8679983B2 (en) 2011-09-01 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and nitrogen
US8927390B2 (en) 2011-09-26 2015-01-06 Applied Materials, Inc. Intrench profile
US8808563B2 (en) 2011-10-07 2014-08-19 Applied Materials, Inc. Selective etch of silicon by way of metastable hydrogen termination
WO2013070436A1 (en) 2011-11-08 2013-05-16 Applied Materials, Inc. Methods of reducing substrate dislocation during gapfill processing
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US9034770B2 (en) 2012-09-17 2015-05-19 Applied Materials, Inc. Differential silicon oxide etch
US9023734B2 (en) 2012-09-18 2015-05-05 Applied Materials, Inc. Radical-component oxide etch
US9390937B2 (en) 2012-09-20 2016-07-12 Applied Materials, Inc. Silicon-carbon-nitride selective etch
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US8765574B2 (en) 2012-11-09 2014-07-01 Applied Materials, Inc. Dry etch process
US8969212B2 (en) 2012-11-20 2015-03-03 Applied Materials, Inc. Dry-etch selectivity
US8980763B2 (en) 2012-11-30 2015-03-17 Applied Materials, Inc. Dry-etch for selective tungsten removal
US9064816B2 (en) 2012-11-30 2015-06-23 Applied Materials, Inc. Dry-etch for selective oxidation removal
US9111877B2 (en) 2012-12-18 2015-08-18 Applied Materials, Inc. Non-local plasma oxide etch
US8921234B2 (en) 2012-12-21 2014-12-30 Applied Materials, Inc. Selective titanium nitride etching
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
CN103972146B (zh) * 2013-01-30 2016-12-28 中芯国际集成电路制造(上海)有限公司 沟槽隔离结构的形成方法
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9040422B2 (en) 2013-03-05 2015-05-26 Applied Materials, Inc. Selective titanium nitride removal
US8801952B1 (en) 2013-03-07 2014-08-12 Applied Materials, Inc. Conformal oxide dry etch
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
US8895449B1 (en) 2013-05-16 2014-11-25 Applied Materials, Inc. Delicate dry clean
US9114438B2 (en) 2013-05-21 2015-08-25 Applied Materials, Inc. Copper residue chamber clean
US9493879B2 (en) 2013-07-12 2016-11-15 Applied Materials, Inc. Selective sputtering for pattern transfer
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
US8956980B1 (en) 2013-09-16 2015-02-17 Applied Materials, Inc. Selective etch of silicon nitride
US8951429B1 (en) 2013-10-29 2015-02-10 Applied Materials, Inc. Tungsten oxide processing
US9576809B2 (en) 2013-11-04 2017-02-21 Applied Materials, Inc. Etch suppression with germanium
US9236265B2 (en) 2013-11-04 2016-01-12 Applied Materials, Inc. Silicon germanium processing
US9520303B2 (en) 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch
US9245762B2 (en) 2013-12-02 2016-01-26 Applied Materials, Inc. Procedure for etch rate consistency
US9117855B2 (en) 2013-12-04 2015-08-25 Applied Materials, Inc. Polarity control for remote plasma
US9287095B2 (en) 2013-12-17 2016-03-15 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
US9263278B2 (en) 2013-12-17 2016-02-16 Applied Materials, Inc. Dopant etch selectivity control
US9190293B2 (en) 2013-12-18 2015-11-17 Applied Materials, Inc. Even tungsten etch for high aspect ratio trenches
US9287134B2 (en) 2014-01-17 2016-03-15 Applied Materials, Inc. Titanium oxide etch
US9293568B2 (en) 2014-01-27 2016-03-22 Applied Materials, Inc. Method of fin patterning
US9396989B2 (en) 2014-01-27 2016-07-19 Applied Materials, Inc. Air gaps between copper lines
US9385028B2 (en) 2014-02-03 2016-07-05 Applied Materials, Inc. Air gap process
US9299575B2 (en) 2014-03-17 2016-03-29 Applied Materials, Inc. Gas-phase tungsten etch
US9299537B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9299538B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9136273B1 (en) 2014-03-21 2015-09-15 Applied Materials, Inc. Flash gate air gap
US9903020B2 (en) 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US9847289B2 (en) 2014-05-30 2017-12-19 Applied Materials, Inc. Protective via cap for improved interconnect performance
US9378969B2 (en) 2014-06-19 2016-06-28 Applied Materials, Inc. Low temperature gas-phase carbon removal
US9406523B2 (en) 2014-06-19 2016-08-02 Applied Materials, Inc. Highly selective doped oxide removal method
US9425058B2 (en) 2014-07-24 2016-08-23 Applied Materials, Inc. Simplified litho-etch-litho-etch process
US9496167B2 (en) 2014-07-31 2016-11-15 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9378978B2 (en) 2014-07-31 2016-06-28 Applied Materials, Inc. Integrated oxide recess and floating gate fin trimming
US9159606B1 (en) 2014-07-31 2015-10-13 Applied Materials, Inc. Metal air gap
US9165786B1 (en) 2014-08-05 2015-10-20 Applied Materials, Inc. Integrated oxide and nitride recess for better channel contact in 3D architectures
US9659753B2 (en) 2014-08-07 2017-05-23 Applied Materials, Inc. Grooved insulator to reduce leakage current
US9553102B2 (en) 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
US9355856B2 (en) 2014-09-12 2016-05-31 Applied Materials, Inc. V trench dry etch
US10199388B2 (en) 2015-08-27 2019-02-05 Applied Mateerials, Inc. VNAND tensile thick TEOS oxide
EP4273625A3 (en) * 2015-10-13 2024-02-28 Inpria Corporation Organotin oxide hydroxide patterning compositions, precursors, and patterning
JP6677501B2 (ja) * 2015-12-17 2020-04-08 ナブテスコ株式会社 多重扉および多重扉開閉装置
CN114078689A (zh) * 2020-08-20 2022-02-22 江苏鲁汶仪器有限公司 一种微米级沟槽填充方法
CN116264181B (zh) * 2021-12-13 2026-02-03 无锡华润上华科技有限公司 沟槽隔离结构的制造方法
CN114784473B (zh) * 2022-03-16 2024-06-21 上海交通大学 基于硅基光敏薄膜的双重折叠基片集成波导滤波巴伦
CN120202321A (zh) * 2022-11-15 2025-06-24 朗姆研究公司 图案化应用的抑制式原子层沉积

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59193044A (ja) * 1983-04-15 1984-11-01 Matsushita Electric Ind Co Ltd 半導体基板の製造方法
JPS6074637A (ja) * 1983-09-30 1985-04-26 Fujitsu Ltd 半導体装置の製造方法
JPH0779127B2 (ja) * 1989-12-27 1995-08-23 株式会社半導体プロセス研究所 半導体装置の製造方法
JPH0779127A (ja) * 1991-06-27 1995-03-20 Nippon Dempa Kogyo Co Ltd 多重モード型圧電振動子
JP2953349B2 (ja) * 1991-12-30 1999-09-27 ソニー株式会社 レジストパターン形成方法、反射防止膜形成方法、反射防止膜および半導体装置
JP2897569B2 (ja) 1991-12-30 1999-05-31 ソニー株式会社 レジストパターン形成時に用いる反射防止膜の条件決定方法と、レジストパターン形成方法
EP0582724A1 (de) * 1992-08-04 1994-02-16 Siemens Aktiengesellschaft Verfahren zur lokal und global planarisierenden CVD-Abscheidung von SiO2-Schichten auf strukturierten Siliziumsubstraten
CA2131668C (en) * 1993-12-23 1999-03-02 Carol Galli Isolation structure using liquid phase oxide deposition
US5447884A (en) * 1994-06-29 1995-09-05 International Business Machines Corporation Shallow trench isolation with thin nitride liner
EP0697723A3 (en) * 1994-08-15 1997-04-16 Ibm Process for metallizing an insulating layer
JPH0945687A (ja) 1995-07-26 1997-02-14 Ricoh Co Ltd 基板表面の平坦化方法
DE19528746C1 (de) * 1995-08-04 1996-10-31 Siemens Ag Verfahren zum Erzeugen einer Siliziumdioxidschicht auf Oberflächenabschnitten einer Struktur
JP3402022B2 (ja) * 1995-11-07 2003-04-28 三菱電機株式会社 半導体装置の製造方法
KR0179554B1 (ko) * 1995-11-30 1999-04-15 김주용 반도체 소자의 소자분리절연막 형성방법
US5968324A (en) * 1995-12-05 1999-10-19 Applied Materials, Inc. Method and apparatus for depositing antireflective coating
US6009827A (en) * 1995-12-06 2000-01-04 Applied Materials, Inc. Apparatus for creating strong interface between in-situ SACVD and PECVD silicon oxide films
US5648175A (en) * 1996-02-14 1997-07-15 Applied Materials, Inc. Chemical vapor deposition reactor system and integrated circuit
US5741626A (en) * 1996-04-15 1998-04-21 Motorola, Inc. Method for forming a dielectric tantalum nitride layer as an anti-reflective coating (ARC)
US6069055A (en) 1996-07-12 2000-05-30 Matsushita Electric Industrial Co., Ltd. Fabricating method for semiconductor device
US5843226A (en) * 1996-07-16 1998-12-01 Applied Materials, Inc. Etch process for single crystal silicon
US6562544B1 (en) * 1996-11-04 2003-05-13 Applied Materials, Inc. Method and apparatus for improving accuracy in photolithographic processing of substrates
US6114216A (en) 1996-11-13 2000-09-05 Applied Materials, Inc. Methods for shallow trench isolation
TW309630B (en) * 1996-11-23 1997-07-01 Taiwan Semiconductor Mfg Method of forming shallow trench isolation
US5786262A (en) * 1997-04-09 1998-07-28 Taiwan Semiconductor Manufacturing Co., Ltd. Self-planarized gapfilling for shallow trench isolation
US5731241A (en) * 1997-05-15 1998-03-24 Taiwan Semiconductor Manufacturing Company, Ltd. Self-aligned sacrificial oxide for shallow trench isolation
US5930644A (en) * 1997-07-23 1999-07-27 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming a shallow trench isolation using oxide slope etching
US6121133A (en) * 1997-08-22 2000-09-19 Micron Technology, Inc. Isolation using an antireflective coating
US5851927A (en) * 1997-08-29 1998-12-22 Motorola, Inc. Method of forming a semiconductor device by DUV resist patterning
US6287990B1 (en) * 1998-02-11 2001-09-11 Applied Materials, Inc. CVD plasma assisted low dielectric constant films
KR20000013397A (ko) * 1998-08-07 2000-03-06 윤종용 트렌치 격리 형성 방법

Also Published As

Publication number Publication date
JP2002517089A (ja) 2002-06-11
DE69835276D1 (de) 2006-08-31
EP0959496B1 (en) 2006-07-19
DE69835276T2 (de) 2007-07-12
US6733955B1 (en) 2004-05-11
WO1999062108A2 (en) 1999-12-02
KR20010043762A (ko) 2001-05-25
KR20060090734A (ko) 2006-08-14
EP0959496A2 (en) 1999-11-24
KR100692090B1 (ko) 2007-03-12
KR100687367B1 (ko) 2007-02-26
EP0959496A3 (en) 1999-12-15
WO1999062108A3 (en) 2000-01-27

Similar Documents

Publication Publication Date Title
TW413885B (en) Methods for forming self-planarized dielectric layer for shallow trench isolation
TWI512136B (zh) 伴隨持續的電漿之ｐｅｃｖｄ多重步驟處理方法
KR101329285B1 (ko) 에스티아이를 위한 실리콘 디옥사이드의 고품질 유전 필름의 제조: 하프 ⅱ― 원격 플라즈마 향상된 증착 공정을 위한 상이한 실록산―기재 전구체의 용도
KR102430939B1 (ko) 반도체 디바이스 제조시 고품질 실리콘 옥사이드 막들의 저온 형성
JP2002517089A5 (https=)
KR101515082B1 (ko) 포토레지스트 또는 건식 에칭이 필요없는 패턴화된 하드 마스크 막의 형성（ｒｆｐ）을 위한 공정 시퀀스
US6703321B2 (en) Low thermal budget solution for PMD application using sacvd layer
TWI442471B (zh) 形成至少一介電層之方法與系統
KR101115750B1 (ko) 실리콘 이산화물의 막 품질을 강화시키는 신규한 증착-플라즈마 경화 사이클 프로세스
TW416100B (en) Control of oxygen to silane ratio in a seasoning process to improve particle performance in an HDP-CVD system
US7176105B2 (en) Dielectric gap fill with oxide selectively deposited over silicon liner
TW385504B (en) Method and apparatus for elimination of Teos/Ozone silicon oxide surface sensitivity
CN103415914A (zh) 平面化后的致密化
TW580752B (en) Method of depositing a nitrogen-doped FSG layer
EP2033214A2 (en) A method for depositing and curing low-k films for gapfill and conformal film applications
KR101029286B1 (ko) 조정 가능한 광학적 특성 및 에칭 특성을 갖는 물질을 증착하는 방법 및 장치
US6875558B1 (en) Integration scheme using self-planarized dielectric layer for shallow trench isolation (STI)
KR20040030827A (ko) 보로포스포실리케이트 유리 필름의 화학 기상 증착 방법
EP1079426A1 (en) Integration scheme using selfplanarized dielectric layer for shallow trench isolation (STI)

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees