KR100692090B1 - 얕은 트렌치 절연을 위한 자기-평탄화 유전체층을 형성하는방법 - Google Patents

얕은 트렌치 절연을 위한 자기-평탄화 유전체층을 형성하는방법 Download PDF

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KR100692090B1
KR100692090B1 KR1020067014383A KR20067014383A KR100692090B1 KR 100692090 B1 KR100692090 B1 KR 100692090B1 KR 1020067014383 A KR1020067014383 A KR 1020067014383A KR 20067014383 A KR20067014383 A KR 20067014383A KR 100692090 B1 KR100692090 B1 KR 100692090B1
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trench
substrate
chamber
gas
deposition
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KR20060090734A (ko
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파브리세 가이거
프레데리크 개라드
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2043—Photolithographic processes using an anti-reflective coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0143—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations comprising concurrently refilling multiple trenches having different shapes or dimensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2

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  • Formation Of Insulating Films (AREA)
  • Element Separation (AREA)
KR1020067014383A 1998-05-22 1999-05-10 얕은 트렌치 절연을 위한 자기-평탄화 유전체층을 형성하는방법 Expired - Fee Related KR100692090B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP98401232A EP0959496B1 (en) 1998-05-22 1998-05-22 Methods for forming self-planarized dielectric layer for shallow trench isolation
EP98401232.8 1998-05-22

Related Parent Applications (1)

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KR1020007013140A Division KR100687367B1 (ko) 1998-05-22 1999-05-10 얕은 트렌치 절연을 위한 자기-평탄화 유전체층을 형성하는 방법

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KR20060090734A KR20060090734A (ko) 2006-08-14
KR100692090B1 true KR100692090B1 (ko) 2007-03-12

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KR1020067014383A Expired - Fee Related KR100692090B1 (ko) 1998-05-22 1999-05-10 얕은 트렌치 절연을 위한 자기-평탄화 유전체층을 형성하는방법
KR1020007013140A Expired - Fee Related KR100687367B1 (ko) 1998-05-22 1999-05-10 얕은 트렌치 절연을 위한 자기-평탄화 유전체층을 형성하는 방법

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Country Status (7)

Country Link
US (1) US6733955B1 (https=)
EP (1) EP0959496B1 (https=)
JP (1) JP2002517089A (https=)
KR (2) KR100692090B1 (https=)
DE (1) DE69835276T2 (https=)
TW (1) TW413885B (https=)
WO (1) WO1999062108A2 (https=)

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DE69835276D1 (de) 2006-08-31
EP0959496B1 (en) 2006-07-19
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US6733955B1 (en) 2004-05-11
WO1999062108A2 (en) 1999-12-02
KR20010043762A (ko) 2001-05-25
KR20060090734A (ko) 2006-08-14
TW413885B (en) 2000-12-01
EP0959496A2 (en) 1999-11-24
KR100687367B1 (ko) 2007-02-26
EP0959496A3 (en) 1999-12-15
WO1999062108A3 (en) 2000-01-27

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