DE69815951T2 - Verfahren und Anlage zur Innenbeschichtung einer Behandlungskammer - Google Patents

Verfahren und Anlage zur Innenbeschichtung einer Behandlungskammer

Info

Publication number
DE69815951T2
DE69815951T2 DE69815951T DE69815951T DE69815951T2 DE 69815951 T2 DE69815951 T2 DE 69815951T2 DE 69815951 T DE69815951 T DE 69815951T DE 69815951 T DE69815951 T DE 69815951T DE 69815951 T2 DE69815951 T2 DE 69815951T2
Authority
DE
Germany
Prior art keywords
installation
treatment chamber
internal coating
coating
internal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69815951T
Other languages
English (en)
Other versions
DE69815951D1 (de
Inventor
Kent Rossman
Sahin Turgut
Saad Hichem M
Romould Nowak
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of DE69815951D1 publication Critical patent/DE69815951D1/de
Application granted granted Critical
Publication of DE69815951T2 publication Critical patent/DE69815951T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H01L21/205—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
DE69815951T 1997-06-11 1998-04-30 Verfahren und Anlage zur Innenbeschichtung einer Behandlungskammer Expired - Fee Related DE69815951T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US87272297A 1997-06-11 1997-06-11

Publications (2)

Publication Number Publication Date
DE69815951D1 DE69815951D1 (de) 2003-08-07
DE69815951T2 true DE69815951T2 (de) 2003-12-24

Family

ID=25360177

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69815951T Expired - Fee Related DE69815951T2 (de) 1997-06-11 1998-04-30 Verfahren und Anlage zur Innenbeschichtung einer Behandlungskammer

Country Status (6)

Country Link
US (1) US6121161A (de)
EP (1) EP0884401B1 (de)
JP (1) JPH1116845A (de)
KR (1) KR100562208B1 (de)
DE (1) DE69815951T2 (de)
TW (1) TW460943B (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005001651A1 (de) * 2005-01-10 2006-07-20 Infineon Technologies Ag Ätzanlage
DE102014205695A1 (de) * 2014-03-27 2015-10-01 Christof-Herbert Diener Niederdruckplasmaanlage mit sequentieller Steuerung

Families Citing this family (93)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030143410A1 (en) * 1997-03-24 2003-07-31 Applied Materials, Inc. Method for reduction of contaminants in amorphous-silicon film
US5939334A (en) * 1997-05-22 1999-08-17 Sharp Laboratories Of America, Inc. System and method of selectively cleaning copper substrate surfaces, in-situ, to remove copper oxides
US6114258A (en) * 1998-10-19 2000-09-05 Applied Materials, Inc. Method of oxidizing a substrate in the presence of nitride and oxynitride films
US6171945B1 (en) * 1998-10-22 2001-01-09 Applied Materials, Inc. CVD nanoporous silica low dielectric constant films
US6602806B1 (en) 1999-08-17 2003-08-05 Applied Materials, Inc. Thermal CVD process for depositing a low dielectric constant carbon-doped silicon oxide film
ATE418158T1 (de) 1999-08-17 2009-01-15 Applied Materials Inc Oberflächenbehandlung von kohlenstoffdotierten sio2-filmen zur erhöhung der stabilität während der o2-veraschung
EP1077479A1 (de) 1999-08-17 2001-02-21 Applied Materials, Inc. Behandlung nach der Abscheidung um die Eigenschaften eines niedrig-k Si-O-C Films zu verbessern
DE19959604A1 (de) * 1999-12-10 2001-06-13 Volkswagen Ag Reaktor für Plasmabeschichtungen und Plasmadiffusionsbehandlungen
KR100351984B1 (ko) * 1999-12-29 2002-09-12 주식회사 하이닉스반도체 화학기상증착장비의 이물감소방법
KR20010066284A (ko) * 1999-12-31 2001-07-11 황인길 박막 증착 공정에 있어서 웨이퍼별 두께 변화 방지 방법
US6833079B1 (en) 2000-02-17 2004-12-21 Applied Materials Inc. Method of etching a shaped cavity
US6465365B1 (en) 2000-04-07 2002-10-15 Koninklijke Philips Electronics N.V. Method of improving adhesion of cap oxide to nanoporous silica for integrated circuit fabrication
WO2001078126A2 (en) * 2000-04-07 2001-10-18 Philips Semiconductors, Inc. A method of passivating a metal line on a wafer
WO2001088969A2 (en) * 2000-05-16 2001-11-22 Applied Materials, Inc. Improved capacitor electrodes
US7166524B2 (en) 2000-08-11 2007-01-23 Applied Materials, Inc. Method for ion implanting insulator material to reduce dielectric constant
US7294563B2 (en) 2000-08-10 2007-11-13 Applied Materials, Inc. Semiconductor on insulator vertical transistor fabrication and doping process
US6939434B2 (en) * 2000-08-11 2005-09-06 Applied Materials, Inc. Externally excited torroidal plasma source with magnetic control of ion distribution
US7223676B2 (en) 2002-06-05 2007-05-29 Applied Materials, Inc. Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer
US7288491B2 (en) 2000-08-11 2007-10-30 Applied Materials, Inc. Plasma immersion ion implantation process
US7094670B2 (en) * 2000-08-11 2006-08-22 Applied Materials, Inc. Plasma immersion ion implantation process
US7137354B2 (en) 2000-08-11 2006-11-21 Applied Materials, Inc. Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage
US7303982B2 (en) 2000-08-11 2007-12-04 Applied Materials, Inc. Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage
US7465478B2 (en) 2000-08-11 2008-12-16 Applied Materials, Inc. Plasma immersion ion implantation process
US7320734B2 (en) 2000-08-11 2008-01-22 Applied Materials, Inc. Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage
US7037813B2 (en) 2000-08-11 2006-05-02 Applied Materials, Inc. Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage
US7183177B2 (en) 2000-08-11 2007-02-27 Applied Materials, Inc. Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement
US6544895B1 (en) * 2000-08-17 2003-04-08 Micron Technology, Inc. Methods for use of pulsed voltage in a plasma reactor
US6485572B1 (en) * 2000-08-28 2002-11-26 Micron Technology, Inc. Use of pulsed grounding source in a plasma reactor
AU2002230793A1 (en) * 2000-10-31 2002-05-15 Applied Materials, Inc. Method and apparatus for cleaning a deposition chamber
US6363624B1 (en) 2000-11-21 2002-04-02 Applied Materials, Inc. Apparatus for cleaning a semiconductor process chamber
US6479098B1 (en) * 2000-12-26 2002-11-12 Taiwan Semiconductor Manufacturing Company Method to solve particle performance of FSG layer by using UFU season film for FSG process
US6403501B1 (en) * 2000-12-27 2002-06-11 Novellus Systems, Inc. Method of controlling FSG deposition rate in an HDP reactor
US6589868B2 (en) 2001-02-08 2003-07-08 Applied Materials, Inc. Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput
US6632478B2 (en) 2001-02-22 2003-10-14 Applied Materials, Inc. Process for forming a low dielectric constant carbon-containing film
KR20030090650A (ko) * 2001-02-26 2003-11-28 어낵시스 발처스 악티엔게젤샤프트 부품 제조 방법 및 진공 처리 시스템
US6516814B2 (en) * 2001-05-03 2003-02-11 Silicon Integrated Systems Corp. Method of rapid prevention of particle pollution in pre-clean chambers
US6626188B2 (en) 2001-06-28 2003-09-30 International Business Machines Corporation Method for cleaning and preconditioning a chemical vapor deposition chamber dome
KR100825130B1 (ko) 2001-07-06 2008-04-24 어플라이드 머티어리얼스, 인코포레이티드 금속 에칭 공정 동안 플라즈마 에칭 챔버내에서 파티클을감소시키는 방법
US20030013314A1 (en) * 2001-07-06 2003-01-16 Chentsau Ying Method of reducing particulates in a plasma etch chamber during a metal etch process
US6815007B1 (en) * 2002-03-04 2004-11-09 Taiwan Semiconductor Manufacturing Company Method to solve IMD-FSG particle and increase Cp yield by using a new tougher UFUN season film
US6825051B2 (en) * 2002-05-17 2004-11-30 Asm America, Inc. Plasma etch resistant coating and process
JP3748837B2 (ja) * 2002-07-11 2006-02-22 松下電器産業株式会社 半導体装置の製造方法
CN100389482C (zh) * 2002-11-11 2008-05-21 株式会社日立国际电气 基板处理装置
JP4430918B2 (ja) * 2003-03-25 2010-03-10 東京エレクトロン株式会社 薄膜形成装置の洗浄方法及び薄膜形成方法
US7723228B2 (en) * 2003-05-20 2010-05-25 Applied Materials, Inc. Reduction of hillocks prior to dielectric barrier deposition in Cu damascene
US7371427B2 (en) * 2003-05-20 2008-05-13 Applied Materials, Inc. Reduction of hillocks prior to dielectric barrier deposition in Cu damascene
US7288284B2 (en) * 2004-03-26 2007-10-30 Taiwan Semiconductor Manufacturing Co., Ltd. Post-cleaning chamber seasoning method
US7115508B2 (en) 2004-04-02 2006-10-03 Applied-Materials, Inc. Oxide-like seasoning for dielectric low k films
KR100601034B1 (ko) * 2004-04-21 2006-07-14 주식회사 아이피에스 박막 증착 방법
US20050260354A1 (en) * 2004-05-20 2005-11-24 Varian Semiconductor Equipment Associates, Inc. In-situ process chamber preparation methods for plasma ion implantation systems
US20060093756A1 (en) * 2004-11-03 2006-05-04 Nagarajan Rajagopalan High-power dielectric seasoning for stable wafer-to-wafer thickness uniformity of dielectric CVD films
JP4541864B2 (ja) * 2004-12-14 2010-09-08 東京エレクトロン株式会社 シリコン酸窒化膜の形成方法、形成装置及びプログラム
US20060189171A1 (en) * 2005-02-23 2006-08-24 Chua Choon A Seasoning process for a deposition chamber
CN101238540B (zh) 2005-06-02 2010-12-08 应用材料公司 用于在氧化物膜中掺入氮的方法和装置
JP4492963B2 (ja) * 2005-06-14 2010-06-30 ルネサスエレクトロニクス株式会社 薄膜の成膜方法、気相成長装置、プログラム
JP4476232B2 (ja) 2006-03-10 2010-06-09 三菱重工業株式会社 成膜装置のシーズニング方法
JP4712632B2 (ja) * 2006-07-24 2011-06-29 太陽誘電株式会社 弾性波デバイス及びその製造方法
KR100800865B1 (ko) * 2006-12-27 2008-02-04 동부일렉트로닉스 주식회사 증착 챔버의 클리닝 방법
JP2009130229A (ja) * 2007-11-27 2009-06-11 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US8119545B2 (en) * 2008-03-31 2012-02-21 Tokyo Electron Limited Forming a silicon nitride film by plasma CVD
US8563090B2 (en) * 2008-10-16 2013-10-22 Applied Materials, Inc. Boron film interface engineering
JP5710591B2 (ja) * 2009-04-20 2015-04-30 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ プロセスチャンバ壁上にシリコンコーティングを使用した残留フッ素ラジカルの除去の促進
FR2947283B1 (fr) * 2009-06-24 2011-07-01 Commissariat Energie Atomique Procede d'elimination de lithium metallique
TWI512981B (zh) 2010-04-27 2015-12-11 Semiconductor Energy Lab 微晶半導體膜的製造方法及半導體裝置的製造方法
US8999847B2 (en) 2010-08-16 2015-04-07 Applied Materials, Inc. a-Si seasoning effect to improve SiN run-to-run uniformity
CN102560416B (zh) * 2010-12-30 2014-06-04 中芯国际集成电路制造(上海)有限公司 一种在晶片上生长含碳薄膜的方法
CN102877041B (zh) * 2011-07-14 2014-11-19 中国科学院微电子研究所 薄膜沉积方法以及半导体器件制造方法
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
CN103255388B (zh) * 2013-05-23 2015-07-08 上海华力微电子有限公司 一种磷酸硅玻璃薄膜的等离子体化学气相沉积方法
CN103560080A (zh) * 2013-11-13 2014-02-05 上海华力微电子有限公司 降低高密度等离子体磷硅玻璃颗粒的方法
US9745658B2 (en) 2013-11-25 2017-08-29 Lam Research Corporation Chamber undercoat preparation method for low temperature ALD films
US9299558B2 (en) 2014-03-21 2016-03-29 Applied Materials, Inc. Run-to-run stability of film deposition
US9613819B2 (en) * 2014-06-06 2017-04-04 Taiwan Semiconductor Manufacturing Company, Ltd. Process chamber, method of preparing a process chamber, and method of operating a process chamber
US9548188B2 (en) 2014-07-30 2017-01-17 Lam Research Corporation Method of conditioning vacuum chamber of semiconductor substrate processing apparatus
KR102046163B1 (ko) * 2014-11-25 2019-11-18 주식회사 원익아이피에스 반도체 소자의 제조방법
TWI567823B (zh) * 2014-12-22 2017-01-21 群創光電股份有限公司 顯示面板與其製造方法
US9828672B2 (en) 2015-03-26 2017-11-28 Lam Research Corporation Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma
US10023956B2 (en) 2015-04-09 2018-07-17 Lam Research Corporation Eliminating first wafer metal contamination effect in high density plasma chemical vapor deposition systems
JP6475609B2 (ja) * 2015-12-28 2019-02-27 信越半導体株式会社 エピタキシャルウェーハの製造方法
US10892143B2 (en) * 2016-10-21 2021-01-12 Applied Materials, Inc. Technique to prevent aluminum fluoride build up on the heater
US10211099B2 (en) 2016-12-19 2019-02-19 Lam Research Corporation Chamber conditioning for remote plasma process
US20180230597A1 (en) * 2017-02-14 2018-08-16 Applied Materials, Inc. Method and apparatus of remote plasmas flowable cvd chamber
CN111448640A (zh) 2017-12-07 2020-07-24 朗姆研究公司 在室调节中的抗氧化保护层
US10760158B2 (en) 2017-12-15 2020-09-01 Lam Research Corporation Ex situ coating of chamber components for semiconductor processing
WO2019169298A1 (en) * 2018-03-01 2019-09-06 Applied Materials, Inc. Systems and methods of formation of a metal hardmask in device fabrication
US10704141B2 (en) * 2018-06-01 2020-07-07 Applied Materials, Inc. In-situ CVD and ALD coating of chamber to control metal contamination
WO2019245727A1 (en) * 2018-06-22 2019-12-26 Applied Materials, Inc. Methods of minimizing wafer backside damage in semiconductor wafer processing
WO2020264054A1 (en) * 2019-06-26 2020-12-30 Lam Research Corporation Chamber-accumulation extension via in-situ passivation
KR102628653B1 (ko) * 2019-09-23 2024-01-25 주식회사 원익아이피에스 박막 형성 방법
US20210159048A1 (en) * 2019-11-25 2021-05-27 Applied Materials, Inc. Dual rf for controllable film deposition
JP2023513102A (ja) * 2020-02-07 2023-03-30 ラム リサーチ コーポレーション 処理チャンバのその場（ｉｎ ｓｉｔｕ）表面コーティング
US11646216B2 (en) * 2020-10-16 2023-05-09 Applied Materials, Inc. Systems and methods of seasoning electrostatic chucks with dielectric seasoning films
JP2023550483A (ja) * 2020-11-20 2023-12-01 アプライド マテリアルズ インコーポレイテッド リチウム処理設備のための洗浄材料及びプロセス

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3591827A (en) * 1967-11-29 1971-07-06 Andar Iti Inc Ion-pumped mass spectrometer leak detector apparatus and method and ion pump therefor
US4099924A (en) * 1977-03-16 1978-07-11 Rca Corporation Apparatus improvements for growing single crystalline silicon sheets
JPS5892217A (ja) * 1981-11-28 1983-06-01 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
JPS5892218A (ja) * 1981-11-28 1983-06-01 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
US4579080A (en) * 1983-12-09 1986-04-01 Applied Materials, Inc. Induction heated reactor system for chemical vapor deposition
US4960488A (en) * 1986-12-19 1990-10-02 Applied Materials, Inc. Reactor chamber self-cleaning process
DE3874638T2 (de) * 1987-07-16 1993-03-18 Texas Instruments Inc Behandlungsapparat und -verfahren.
DE3743938C2 (de) * 1987-12-23 1995-08-31 Cs Halbleiter Solartech Verfahren zum Atomschicht-Epitaxie-Aufwachsen einer III/V-Verbindungshalbleiter-Dünnschicht
KR0145302B1 (ko) * 1988-04-28 1998-08-17 카자마 젠쥬 얇은 막의 형성방법
JP2708533B2 (ja) * 1989-03-14 1998-02-04 富士通株式会社 Ｃｖｄ装置の残留ガス除去方法
JPH03130368A (ja) * 1989-09-22 1991-06-04 Applied Materials Inc 半導体ウェーハプロセス装置の洗浄方法
DE69027496T2 (de) * 1989-09-26 1996-10-31 Canon Kk Gasversorgungsvorrichtung und ihre Verwendung für eine Filmabscheidungsanlage
EP0825578B1 (de) * 1990-02-26 2001-07-18 Matsushita Electric Industrial Co., Ltd. System zur Überwachung von Verkehrsflussänderungen
US5045346A (en) * 1990-07-31 1991-09-03 Gte Laboratories Incorporated Method of depositing fluorinated silicon nitride
US5304405A (en) * 1991-01-11 1994-04-19 Anelva Corporation Thin film deposition method and apparatus
US5244730A (en) * 1991-04-30 1993-09-14 International Business Machines Corporation Plasma deposition of fluorocarbon
JPH06101462B2 (ja) * 1991-04-30 1994-12-12 インターナショナル・ビジネス・マシーンズ・コーポレイション 過フッ化炭化水素ポリマ膜を基板に接着する方法および 基板
US5201990A (en) * 1991-05-23 1993-04-13 Applied Materials, Inc. Process for treating aluminum surfaces in a vacuum apparatus
US5221414A (en) * 1991-07-16 1993-06-22 Micron Technology, Inc. Process and system for stabilizing layer deposition and etch rates while simultaneously maintaining cleanliness in a water processing reaction chamber
DE4130882C1 (de) * 1991-09-17 1993-01-07 Kloeckner-Moeller Gmbh, 5300 Bonn, De
JP3253734B2 (ja) * 1992-06-19 2002-02-04 富士通株式会社 半導体装置製造用の石英製装置
JP3688726B2 (ja) * 1992-07-17 2005-08-31 株式会社東芝 半導体装置の製造方法
FR2695410B1 (fr) * 1992-09-04 1994-11-18 France Telecom Procédé de prétraitement d'un substrat pour le dépôt sélectif de tungstène.
US5366585A (en) * 1993-01-28 1994-11-22 Applied Materials, Inc. Method and apparatus for protection of conductive surfaces in a plasma processing reactor
US5571571A (en) * 1993-06-16 1996-11-05 Applied Materials, Inc. Method of forming a thin film for a semiconductor device
US5486235A (en) * 1993-08-09 1996-01-23 Applied Materials, Inc. Plasma dry cleaning of semiconductor processing chambers
US5614055A (en) * 1993-08-27 1997-03-25 Applied Materials, Inc. High density plasma CVD and etching reactor
EP0648861A1 (de) * 1993-10-15 1995-04-19 Applied Materials, Inc. Anlage zur Behandlung von Halbleitern
DE69424759T2 (de) * 1993-12-28 2001-02-08 Applied Materials Inc Gasphasenabscheidungsverfahren in einer einzigen Kammer für Dünnfilmtransistoren
US5558717A (en) * 1994-11-30 1996-09-24 Applied Materials CVD Processing chamber

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005001651A1 (de) * 2005-01-10 2006-07-20 Infineon Technologies Ag Ätzanlage
DE102014205695A1 (de) * 2014-03-27 2015-10-01 Christof-Herbert Diener Niederdruckplasmaanlage mit sequentieller Steuerung
DE102014205695B4 (de) * 2014-03-27 2016-01-28 Christof-Herbert Diener Niederdruckplasmaanlage mit sequentieller Steuerung
US9741547B2 (en) 2014-03-27 2017-08-22 Christof-Herbert Diener Low-pressure plasma system with sequential control process

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US6121161A (en) 2000-09-19
EP0884401A1 (de) 1998-12-16
KR19990006869A (ko) 1999-01-25
EP0884401B1 (de) 2003-07-02
TW460943B (en) 2001-10-21
KR100562208B1 (ko) 2006-05-25
JPH1116845A (ja) 1999-01-22

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