DE69501222T2 - Plasmabehandlungskammer und Verfahren zur Behandlung der Substraten in einer Plasmabehandlungskammer - Google Patents

Plasmabehandlungskammer und Verfahren zur Behandlung der Substraten in einer Plasmabehandlungskammer

Info

Publication number
DE69501222T2
DE69501222T2 DE69501222T DE69501222T DE69501222T2 DE 69501222 T2 DE69501222 T2 DE 69501222T2 DE 69501222 T DE69501222 T DE 69501222T DE 69501222 T DE69501222 T DE 69501222T DE 69501222 T2 DE69501222 T2 DE 69501222T2
Authority
DE
Germany
Prior art keywords
plasma treatment
treatment chamber
substrates
treating
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69501222T
Other languages
English (en)
Other versions
DE69501222D1 (de
Inventor
Charles N Dornfest
John White
Craig Bercaw
Steve Tomozawa
Mark Fodor
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=22796865&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69501222(T2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of DE69501222D1 publication Critical patent/DE69501222D1/de
Publication of DE69501222T2 publication Critical patent/DE69501222T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32559—Protection means, e.g. coatings
DE69501222T 1994-03-15 1995-03-15 Plasmabehandlungskammer und Verfahren zur Behandlung der Substraten in einer Plasmabehandlungskammer Expired - Fee Related DE69501222T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/213,880 US5680013A (en) 1994-03-15 1994-03-15 Ceramic protection for heated metal surfaces of plasma processing chamber exposed to chemically aggressive gaseous environment therein and method of protecting such heated metal surfaces

Publications (2)

Publication Number Publication Date
DE69501222D1 DE69501222D1 (de) 1998-01-29
DE69501222T2 true DE69501222T2 (de) 1998-07-09

Family

ID=22796865

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69501222T Expired - Fee Related DE69501222T2 (de) 1994-03-15 1995-03-15 Plasmabehandlungskammer und Verfahren zur Behandlung der Substraten in einer Plasmabehandlungskammer

Country Status (5)

Country Link
US (2) US5680013A (de)
EP (1) EP0673056B1 (de)
JP (1) JPH0871408A (de)
KR (1) KR100242897B1 (de)
DE (1) DE69501222T2 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005001651A1 (de) * 2005-01-10 2006-07-20 Infineon Technologies Ag Ätzanlage
DE102006013801A1 (de) * 2006-03-24 2007-09-27 Aixtron Ag Gaseinlassorgan mit gelochter Isolationsplatte

Families Citing this family (150)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5680013A (en) * 1994-03-15 1997-10-21 Applied Materials, Inc. Ceramic protection for heated metal surfaces of plasma processing chamber exposed to chemically aggressive gaseous environment therein and method of protecting such heated metal surfaces
JP2813154B2 (ja) * 1994-06-30 1998-10-22 日本碍子株式会社 プラズマ発生電極装置およびプラズマ発生装置
JP2933508B2 (ja) * 1995-05-25 1999-08-16 忠弘 大見 プラズマ処理装置
JPH0925586A (ja) * 1995-07-11 1997-01-28 Anelva Corp 基板処理装置および基板処理方法
EP0757023B1 (de) * 1995-08-03 2000-10-18 Ngk Insulators, Ltd. Gesinterte Aluminiumnitridkörper und ihr Herstellungsverfahren
JPH0992641A (ja) * 1995-09-22 1997-04-04 Mitsubishi Electric Corp プラズマエッチング装置
JP4925681B2 (ja) * 1995-12-28 2012-05-09 京セラ株式会社 耐食性部材
JP2901907B2 (ja) * 1996-01-10 1999-06-07 アプライド マテリアルズ インコーポレイテッド プロセスチャンバウィンドウ
JP3444090B2 (ja) * 1996-04-22 2003-09-08 日清紡績株式会社 プラズマ処理装置用保護部材
JP3019002B2 (ja) * 1996-09-20 2000-03-13 日本電気株式会社 ドライエッチング装置及びドライエッチング方法
US5911832A (en) * 1996-10-10 1999-06-15 Eaton Corporation Plasma immersion implantation with pulsed anode
US6120640A (en) * 1996-12-19 2000-09-19 Applied Materials, Inc. Boron carbide parts and coatings in a plasma reactor
JP3077623B2 (ja) * 1997-04-02 2000-08-14 日本電気株式会社 プラズマ化学気相成長装置
JP3362113B2 (ja) * 1997-07-15 2003-01-07 日本碍子株式会社 耐蝕性部材、ウエハー設置部材および耐蝕性部材の製造方法
US6391216B1 (en) * 1997-09-22 2002-05-21 National Research Institute For Metals Method for reactive ion etching and apparatus therefor
US5879523A (en) * 1997-09-29 1999-03-09 Applied Materials, Inc. Ceramic coated metallic insulator particularly useful in a plasma sputter reactor
JP4037956B2 (ja) * 1998-04-28 2008-01-23 東海カーボン株式会社 チャンバー内壁保護部材
US6182603B1 (en) * 1998-07-13 2001-02-06 Applied Komatsu Technology, Inc. Surface-treated shower head for use in a substrate processing chamber
JP4641569B2 (ja) * 1998-07-24 2011-03-02 日本碍子株式会社 窒化アルミニウム質焼結体、耐蝕性部材、金属埋設および半導体保持装置
US6123791A (en) * 1998-07-29 2000-09-26 Applied Materials, Inc. Ceramic composition for an apparatus and method for processing a substrate
US6379492B2 (en) * 1998-10-31 2002-04-30 Applied Materials, Inc. Corrosion resistant coating
US6230651B1 (en) * 1998-12-30 2001-05-15 Lam Research Corporation Gas injection system for plasma processing
US6466881B1 (en) * 1999-04-22 2002-10-15 Applied Materials Inc. Method for monitoring the quality of a protective coating in a reactor chamber
US6444083B1 (en) 1999-06-30 2002-09-03 Lam Research Corporation Corrosion resistant component of semiconductor processing equipment and method of manufacturing thereof
US6227140B1 (en) 1999-09-23 2001-05-08 Lam Research Corporation Semiconductor processing equipment having radiant heated ceramic liner
US6408786B1 (en) 1999-09-23 2002-06-25 Lam Research Corporation Semiconductor processing equipment having tiled ceramic liner
US6139696A (en) 1999-10-25 2000-10-31 Motorola, Inc. Method and apparatus for forming a layer on a substrate
JP2001155899A (ja) * 1999-11-25 2001-06-08 Tadahiro Omi プラズマプロセス装置およびプラズマ装置を用いたプロセス
KR20010062209A (ko) 1999-12-10 2001-07-07 히가시 데쓰로 고내식성 막이 내부에 형성된 챔버를 구비하는 처리 장치
US6673198B1 (en) * 1999-12-22 2004-01-06 Lam Research Corporation Semiconductor processing equipment having improved process drift control
JP3654142B2 (ja) * 2000-01-20 2005-06-02 住友電気工業株式会社 半導体製造装置用ガスシャワー体
US6391146B1 (en) 2000-04-11 2002-05-21 Applied Materials, Inc. Erosion resistant gas energizer
JP4896337B2 (ja) * 2000-05-17 2012-03-14 東京エレクトロン株式会社 処理装置およびそのメンテナンス方法，処理装置部品の組立機構およびその組立方法，ロック機構およびそのロック方法
US6537429B2 (en) 2000-12-29 2003-03-25 Lam Research Corporation Diamond coatings on reactor wall and method of manufacturing thereof
US6533910B2 (en) 2000-12-29 2003-03-18 Lam Research Corporation Carbonitride coated component of semiconductor processing equipment and method of manufacturing thereof
US6613442B2 (en) * 2000-12-29 2003-09-02 Lam Research Corporation Boron nitride/yttria composite components of semiconductor processing equipment and method of manufacturing thereof
US6620520B2 (en) * 2000-12-29 2003-09-16 Lam Research Corporation Zirconia toughened ceramic components and coatings in semiconductor processing equipment and method of manufacture thereof
US7128804B2 (en) 2000-12-29 2006-10-31 Lam Research Corporation Corrosion resistant component of semiconductor processing equipment and method of manufacture thereof
US6790242B2 (en) 2000-12-29 2004-09-14 Lam Research Corporation Fullerene coated component of semiconductor processing equipment and method of manufacturing thereof
KR100564168B1 (ko) * 2001-01-22 2006-03-27 동경 엘렉트론 주식회사 플라즈마 처리 장치 및 플라즈마 처리 방법
US20020122896A1 (en) * 2001-03-02 2002-09-05 Skion Corporation Capillary discharge plasma apparatus and method for surface treatment using the same
US6830622B2 (en) * 2001-03-30 2004-12-14 Lam Research Corporation Cerium oxide containing ceramic components and coatings in semiconductor processing equipment and methods of manufacture thereof
FR2824821B1 (fr) * 2001-05-17 2003-08-29 Essilor Int Procede de preparation d'un verre apte au debordage, verre ainsi obtenu et procede de debordage d'un tel verre
ATE280437T1 (de) * 2001-05-31 2004-11-15 Cit Alcatel Abnehmbare schirmvorrichtung für plasmareaktoren
US7670688B2 (en) * 2001-06-25 2010-03-02 Applied Materials, Inc. Erosion-resistant components for plasma process chambers
US20030015505A1 (en) * 2001-07-19 2003-01-23 Skion Corporation Apparatus and method for sterilization of articles using capillary discharge atmospheric plasma
KR100789453B1 (ko) * 2001-07-30 2008-01-02 엘지.필립스 엘시디 주식회사 플라즈마 화학기상증착장비의 프로세스 챔버
US20030042227A1 (en) * 2001-08-29 2003-03-06 Tokyo Electron Limited Apparatus and method for tailoring an etch profile
US20030070620A1 (en) * 2001-10-15 2003-04-17 Cooperberg David J. Tunable multi-zone gas injection system
US7371467B2 (en) 2002-01-08 2008-05-13 Applied Materials, Inc. Process chamber component having electroplated yttrium containing coating
US6942929B2 (en) 2002-01-08 2005-09-13 Nianci Han Process chamber having component with yttrium-aluminum coating
FR2834712B1 (fr) * 2002-01-14 2004-12-17 Essilor Int Procede de traitement d'un verre ophtalmique
US6827815B2 (en) * 2002-01-15 2004-12-07 Applied Materials, Inc. Showerhead assembly for a processing chamber
US7479304B2 (en) * 2002-02-14 2009-01-20 Applied Materials, Inc. Gas distribution plate fabricated from a solid yttrium oxide-comprising substrate
US20080213496A1 (en) * 2002-02-14 2008-09-04 Applied Materials, Inc. Method of coating semiconductor processing apparatus with protective yttrium-containing coatings
US8067067B2 (en) * 2002-02-14 2011-11-29 Applied Materials, Inc. Clean, dense yttrium oxide coating protecting semiconductor processing apparatus
US6776873B1 (en) * 2002-02-14 2004-08-17 Jennifer Y Sun Yttrium oxide based surface coating for semiconductor IC processing vacuum chambers
US6789498B2 (en) 2002-02-27 2004-09-14 Applied Materials, Inc. Elements having erosion resistance
AU2003282533A1 (en) * 2002-08-08 2004-02-25 Trikon Technologies Limited Improvements to showerheads
US7166166B2 (en) 2002-09-30 2007-01-23 Tokyo Electron Limited Method and apparatus for an improved baffle plate in a plasma processing system
US7166200B2 (en) 2002-09-30 2007-01-23 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate in a plasma processing system
US7147749B2 (en) 2002-09-30 2006-12-12 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system
US7204912B2 (en) 2002-09-30 2007-04-17 Tokyo Electron Limited Method and apparatus for an improved bellows shield in a plasma processing system
US6798519B2 (en) 2002-09-30 2004-09-28 Tokyo Electron Limited Method and apparatus for an improved optical window deposition shield in a plasma processing system
US7137353B2 (en) 2002-09-30 2006-11-21 Tokyo Electron Limited Method and apparatus for an improved deposition shield in a plasma processing system
US6837966B2 (en) 2002-09-30 2005-01-04 Tokyo Electron Limeted Method and apparatus for an improved baffle plate in a plasma processing system
JP4753276B2 (ja) * 2002-11-26 2011-08-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
CN1249789C (zh) 2002-11-28 2006-04-05 东京毅力科创株式会社 等离子体处理容器内部件
US7316761B2 (en) * 2003-02-03 2008-01-08 Applied Materials, Inc. Apparatus for uniformly etching a dielectric layer
CN100495413C (zh) 2003-03-31 2009-06-03 东京毅力科创株式会社 用于邻接在处理元件上的相邻覆层的方法
KR101016913B1 (ko) 2003-03-31 2011-02-22 도쿄엘렉트론가부시키가이샤 처리요소용 배리어층 및 그의 형성방법
DE10322696B3 (de) * 2003-05-20 2005-01-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zur plasmagestützten Behandlung von vorgebbaren Oberflächenbereichen eines Substrates
DE112004000057B4 (de) * 2003-05-27 2008-09-25 Matsushita Electric Works, Ltd., Kadoma Plasmabehandlungsapparat und Plasmabehandlungsverfahren
KR100585089B1 (ko) * 2003-05-27 2006-05-30 삼성전자주식회사 웨이퍼 가장자리를 처리하기 위한 플라즈마 처리장치,플라즈마 처리장치용 절연판, 플라즈마 처리장치용하부전극, 웨이퍼 가장자리의 플라즈마 처리방법 및반도체소자의 제조방법
FR2856056B1 (fr) * 2003-06-13 2009-07-03 Essilor Int Procede de traitement d'un verre apte au debordage.
KR20040107983A (ko) * 2003-06-16 2004-12-23 삼성전자주식회사 반도체 제조 장치
KR100534209B1 (ko) * 2003-07-29 2005-12-08 삼성전자주식회사 반도체소자 제조용 화학기상증착 공정설비
US20050022735A1 (en) * 2003-07-31 2005-02-03 General Electric Company Delivery system for PECVD powered electrode
US20050050708A1 (en) * 2003-09-04 2005-03-10 Taiwan Semiconductor Manufacturing Co., Ltd. Embedded fastener apparatus and method for preventing particle contamination
FR2860306B1 (fr) * 2003-09-26 2006-09-01 Essilor Int Lentille ophtalmique recouverte d'un film electrostatique et procede de debordage d'une telle lentille
US20050098106A1 (en) * 2003-11-12 2005-05-12 Tokyo Electron Limited Method and apparatus for improved electrode plate
US20050220568A1 (en) * 2004-03-31 2005-10-06 Tokyo Electron Limited Method and system for fastening components used in plasma processing
US20050241579A1 (en) * 2004-04-30 2005-11-03 Russell Kidd Face shield to improve uniformity of blanket CVD processes
DE102004029959B4 (de) * 2004-06-21 2010-08-19 Infineon Technologies Ag Gasdurchlässige Plasmaelektrode, Verfahren zum Herstellen der gasdurchlässigen Plasmaelektrode und Parallelplatten-Reaktor
JP2006049544A (ja) * 2004-08-04 2006-02-16 Canon Anelva Corp 基板処理装置及びこれを用いた基板処理方法
US7728823B2 (en) * 2004-09-24 2010-06-01 Apple Inc. System and method for processing raw data of track pad device
KR100650926B1 (ko) 2004-10-13 2006-11-29 주식회사 에이디피엔지니어링 플라즈마 처리장치
US7552521B2 (en) 2004-12-08 2009-06-30 Tokyo Electron Limited Method and apparatus for improved baffle plate
US7601242B2 (en) 2005-01-11 2009-10-13 Tokyo Electron Limited Plasma processing system and baffle assembly for use in plasma processing system
JP4628900B2 (ja) * 2005-08-24 2011-02-09 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP2006045059A (ja) * 2005-09-05 2006-02-16 Ngk Insulators Ltd 窒化アルミニウム質焼結体、耐蝕性部材、金属埋設品および半導体保持装置
US8679252B2 (en) * 2005-09-23 2014-03-25 Lam Research Corporation Actively heated aluminum baffle component having improved particle performance and methods of use and manufacture thereof
US20070141358A1 (en) 2005-12-19 2007-06-21 Essilor International Compagnie Generale D'optique Method for improving the edging of an optical article by providing a temporary layer of an organic material
WO2007132757A1 (ja) * 2006-05-15 2007-11-22 Ulvac, Inc. クリーニング方法及び真空処理装置
JP2007305890A (ja) * 2006-05-15 2007-11-22 Elpida Memory Inc 半導体製造装置
US20080029032A1 (en) * 2006-08-01 2008-02-07 Sun Jennifer Y Substrate support with protective layer for plasma resistance
US10622194B2 (en) 2007-04-27 2020-04-14 Applied Materials, Inc. Bulk sintered solid solution ceramic which exhibits fracture toughness and halogen plasma resistance
US10242888B2 (en) 2007-04-27 2019-03-26 Applied Materials, Inc. Semiconductor processing apparatus with a ceramic-comprising surface which exhibits fracture toughness and halogen plasma resistance
US8367227B2 (en) 2007-08-02 2013-02-05 Applied Materials, Inc. Plasma-resistant ceramics with controlled electrical resistivity
JP5474291B2 (ja) 2007-11-05 2014-04-16 株式会社アルバック アッシング装置
US20090155488A1 (en) * 2007-12-18 2009-06-18 Asm Japan K.K. Shower plate electrode for plasma cvd reactor
CN101499407B (zh) * 2008-02-02 2010-07-28 北京北方微电子基地设备工艺研究中心有限责任公司 一种气体分配装置及应用该分配装置的半导体处理设备
US10155233B2 (en) * 2008-04-09 2018-12-18 Carlisle Fluid Technologies, Inc. Splash plate retention method and apparatus
KR101004927B1 (ko) * 2008-04-24 2010-12-29 삼성엘이디 주식회사 Ｃｖｄ용 샤워 헤드 및 이를 구비하는 화학 기상 증착 장치
WO2009153856A1 (ja) * 2008-06-17 2009-12-23 キヤノンアネルバ株式会社 防着カバー付きキャリアおよび防着カバー着脱装置
US8206506B2 (en) * 2008-07-07 2012-06-26 Lam Research Corporation Showerhead electrode
US8161906B2 (en) 2008-07-07 2012-04-24 Lam Research Corporation Clamped showerhead electrode assembly
US8221582B2 (en) 2008-07-07 2012-07-17 Lam Research Corporation Clamped monolithic showerhead electrode
US8402918B2 (en) * 2009-04-07 2013-03-26 Lam Research Corporation Showerhead electrode with centering feature
US8272346B2 (en) 2009-04-10 2012-09-25 Lam Research Corporation Gasket with positioning feature for clamped monolithic showerhead electrode
SG169960A1 (en) * 2009-09-18 2011-04-29 Lam Res Corp Clamped monolithic showerhead electrode
US8216640B2 (en) * 2009-09-25 2012-07-10 Hermes-Epitek Corporation Method of making showerhead for semiconductor processing apparatus
KR200464037Y1 (ko) 2009-10-13 2012-12-07 램 리써치 코포레이션 샤워헤드 전극 어셈블리의 에지-클램핑되고 기계적으로 패스닝된 내부 전극
US20110120651A1 (en) * 2009-11-17 2011-05-26 Applied Materials, Inc. Showerhead assembly with improved impact protection
KR101221925B1 (ko) * 2010-04-22 2013-01-14 한국세라믹기술원 플라즈마 저항성 세라믹 피막 및 그 제조 방법
JP5766495B2 (ja) * 2010-05-18 2015-08-19 株式会社日立ハイテクノロジーズ 熱処理装置
JP2012004160A (ja) * 2010-06-14 2012-01-05 Tokyo Electron Ltd 基板処理方法及び基板処理装置
US9728429B2 (en) * 2010-07-27 2017-08-08 Lam Research Corporation Parasitic plasma prevention in plasma processing chambers
US8573152B2 (en) 2010-09-03 2013-11-05 Lam Research Corporation Showerhead electrode
US8188575B2 (en) 2010-10-05 2012-05-29 Skyworks Solutions, Inc. Apparatus and method for uniform metal plating
US8470127B2 (en) 2011-01-06 2013-06-25 Lam Research Corporation Cam-locked showerhead electrode and assembly
KR101843609B1 (ko) * 2011-03-04 2018-05-14 노벨러스 시스템즈, 인코포레이티드 하이브리드 세라믹 샤워헤드
US8802545B2 (en) * 2011-03-14 2014-08-12 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
JP2012222157A (ja) * 2011-04-08 2012-11-12 Hitachi Kokusai Electric Inc 基板処理装置、及び、太陽電池の製造方法
US9245717B2 (en) 2011-05-31 2016-01-26 Lam Research Corporation Gas distribution system for ceramic showerhead of plasma etch reactor
US8562785B2 (en) * 2011-05-31 2013-10-22 Lam Research Corporation Gas distribution showerhead for inductively coupled plasma etch reactor
US10224182B2 (en) 2011-10-17 2019-03-05 Novellus Systems, Inc. Mechanical suppression of parasitic plasma in substrate processing chamber
US20140097752A1 (en) * 2012-10-09 2014-04-10 Varian Semiconductor Equipment Associates, Inc. Inductively Coupled Plasma ION Source Chamber with Dopant Material Shield
US9916998B2 (en) 2012-12-04 2018-03-13 Applied Materials, Inc. Substrate support assembly having a plasma resistant protective layer
US9685356B2 (en) 2012-12-11 2017-06-20 Applied Materials, Inc. Substrate support assembly having metal bonded protective layer
CN103903946B (zh) * 2012-12-26 2017-11-17 中微半导体设备(上海)有限公司 一种用于等离子反应器的气体喷淋头
US9449795B2 (en) * 2013-02-28 2016-09-20 Novellus Systems, Inc. Ceramic showerhead with embedded RF electrode for capacitively coupled plasma reactor
US20140356985A1 (en) 2013-06-03 2014-12-04 Lam Research Corporation Temperature controlled substrate support assembly
US9637415B2 (en) 2013-10-24 2017-05-02 Surmet Corporation Method of making high purity polycrystalline aluminum oxynitride bodies useful in semiconductor process chambers
JP6422262B2 (ja) * 2013-10-24 2018-11-14 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US10832931B2 (en) * 2014-05-30 2020-11-10 Applied Materials, Inc. Electrostatic chuck with embossed top plate and cooling channels
JP6262164B2 (ja) * 2015-02-20 2018-01-17 三菱重工工作機械株式会社 常温接合方法
US10023956B2 (en) * 2015-04-09 2018-07-17 Lam Research Corporation Eliminating first wafer metal contamination effect in high density plasma chemical vapor deposition systems
US10023959B2 (en) 2015-05-26 2018-07-17 Lam Research Corporation Anti-transient showerhead
KR102417934B1 (ko) 2015-07-07 2022-07-07 에이에스엠 아이피 홀딩 비.브이. 박막 증착 장치
KR102408403B1 (ko) * 2015-11-04 2022-06-14 (주)포인트엔지니어링 서셉터 및 이를 포함하는 진공챔버
US10020218B2 (en) 2015-11-17 2018-07-10 Applied Materials, Inc. Substrate support assembly with deposited surface features
KR101931692B1 (ko) * 2017-10-11 2018-12-21 주식회사 유진테크 배치식 플라즈마 기판처리장치
KR102204026B1 (ko) * 2018-07-06 2021-01-18 주식회사 케이에스엠컴포넌트 세라믹 샤워 헤드 및 그를 구비한 화학 기상 증착 장치
US11600517B2 (en) * 2018-08-17 2023-03-07 Taiwan Semiconductor Manufacturing Co., Ltd. Screwless semiconductor processing chambers
JPWO2020208801A1 (ja) * 2019-04-12 2021-05-06 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理装置の内部部材ならびに当該内部部材の製造方法
CN113924387A (zh) * 2019-05-22 2022-01-11 应用材料公司 用于高温腐蚀环境的基板支承件盖
US20210032750A1 (en) * 2019-07-31 2021-02-04 Taiwan Semiconductor Manufacturing Co., Ltd. Deposition apparatus and method of forming metal oxide layer using the same
RU206587U1 (ru) * 2020-09-11 2021-09-16 Общество С Ограниченной Ответственностью "Изовак" Источник ионов для обработки деталей
KR20230082405A (ko) * 2021-12-01 2023-06-08 주식회사 유진테크 리프트핀 프로텍션 어셈블리 및 기판 처리 장치

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3179213A (en) * 1960-03-14 1965-04-20 Eitel Mccullough Inc Dielectric window and method of making it
CH592262A5 (de) * 1975-07-04 1977-10-14 Bbc Brown Boveri & Cie
GB1574804A (en) * 1976-05-20 1980-09-10 Chloride Silent Power Ltd Metal-to-ceramic seals
JPS5687667A (en) * 1979-12-20 1981-07-16 Toshiba Corp Reactive ion etching method
US4427516A (en) * 1981-08-24 1984-01-24 Bell Telephone Laboratories, Incorporated Apparatus and method for plasma-assisted etching of wafers
FR2538987A1 (fr) * 1983-01-05 1984-07-06 Commissariat Energie Atomique Enceinte pour le traitement et notamment la gravure de substrats par la methode du plasma reactif
JPS59184527A (ja) * 1983-04-05 1984-10-19 Canon Inc 気相法装置
CH665057A5 (de) * 1984-07-20 1988-04-15 Balzers Hochvakuum Targetplatte fuer kathodenzerstaeubung.
US4612432A (en) * 1984-09-14 1986-09-16 Monolithic Memories, Inc. Etching plasma generator diffusor and cap
US4693777A (en) * 1984-11-30 1987-09-15 Kabushiki Kaisha Toshiba Apparatus for producing semiconductor devices
US4793975A (en) * 1985-05-20 1988-12-27 Tegal Corporation Plasma Reactor with removable insert
JPS62113761A (ja) * 1985-05-20 1987-05-25 東芝セラミツクス株式会社 高強度焼結体およびその製造方法
US4623417A (en) * 1985-08-23 1986-11-18 Texas Instruments Incorporated Magnetron plasma reactor
JPS6247131A (ja) * 1985-08-27 1987-02-28 Nec Corp 反応性イオンエツチング装置
JPS6376430A (ja) * 1986-09-19 1988-04-06 Fujitsu Ltd プラズマ化学気相成長装置
JPS63251127A (ja) * 1987-04-06 1988-10-18 Ngk Insulators Ltd セラミック製部材と金属製部材の結合方法
DE3912381A1 (de) * 1988-04-15 1989-10-26 Sharp Kk Auffaengereinheit
JPH07118465B2 (ja) * 1988-06-14 1995-12-18 東芝セラミックス株式会社 縦型エピタキシャル装置用サセプター
US5252892A (en) * 1989-02-16 1993-10-12 Tokyo Electron Limited Plasma processing apparatus
JPH02298024A (ja) * 1989-05-12 1990-12-10 Tadahiro Omi リアクティブイオンエッチング装置
US5238499A (en) * 1990-07-16 1993-08-24 Novellus Systems, Inc. Gas-based substrate protection during processing
US5223113A (en) * 1990-07-20 1993-06-29 Tokyo Electron Limited Apparatus for forming reduced pressure and for processing object
US5074456A (en) * 1990-09-18 1991-12-24 Lam Research Corporation Composite electrode for plasma processes
US5178681A (en) * 1991-01-29 1993-01-12 Applied Materials, Inc. Suspension system for semiconductor reactors
US5269894A (en) * 1991-05-08 1993-12-14 Balzers Aktiengesellschaft Method of mounting a target plate to be cooled into a vacuum process chamber, an arrangement of a target plate, a target plate and a vacuum chamber
US5236151A (en) * 1991-12-23 1993-08-17 General Electric Company Thermal barrier structure
US5257872A (en) * 1992-05-05 1993-11-02 Hughes Aircraft Company High power waveguide switch and method
US5366585A (en) * 1993-01-28 1994-11-22 Applied Materials, Inc. Method and apparatus for protection of conductive surfaces in a plasma processing reactor
EP0624896B1 (de) * 1993-05-13 1999-09-22 Applied Materials, Inc. Kontrolle der Kontamination in einem Plasma durch Ausgestaltung des Plasmaschildes unter Verwendung von Materialien mit verschiedenen RF-Impedanzen
US5680013A (en) * 1994-03-15 1997-10-21 Applied Materials, Inc. Ceramic protection for heated metal surfaces of plasma processing chamber exposed to chemically aggressive gaseous environment therein and method of protecting such heated metal surfaces
US5589003A (en) * 1996-02-09 1996-12-31 Applied Materials, Inc. Shielded substrate support for processing chamber

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005001651A1 (de) * 2005-01-10 2006-07-20 Infineon Technologies Ag Ätzanlage
DE102006013801A1 (de) * 2006-03-24 2007-09-27 Aixtron Ag Gaseinlassorgan mit gelochter Isolationsplatte

Also Published As

Publication number Publication date
JPH0871408A (ja) 1996-03-19
KR100242897B1 (ko) 2000-03-02
EP0673056A1 (de) 1995-09-20
DE69501222D1 (de) 1998-01-29
US5959409A (en) 1999-09-28
US5680013A (en) 1997-10-21
KR950032709A (ko) 1995-12-22
EP0673056B1 (de) 1997-12-17

Similar Documents

Publication Publication Date Title
DE69501222T2 (de) Plasmabehandlungskammer und Verfahren zur Behandlung der Substraten in einer Plasmabehandlungskammer
DE69636618D1 (de) Verfahren zur behandlung einer substratoberfläche und behandlungsmittel hierfür
DE69812239T2 (de) Verfahren und Vorrichtung zum Vorbeschichten einer Kammer zur Behandlung von Substraten
DE69425372D1 (de) Verfahren zur behandlung endo-ostealer materialien
DE69527661D1 (de) Vorrichtung und Verfahren zur Substratbehandlung mittels Plasma
DE69829625D1 (de) Verfahren und Vorrichtung zur Behandlung von Perfluorokohlenstoff
DE69430309T2 (de) Dilatationskatheter und verfahren zur behandlung damit
DE69515593D1 (de) Verfahren und Vorrichtung zur Oberflächenbehandlung
DE59200713D1 (de) Verfahren und Vorrichtung zur Behandlung oder Beschichtung von Substraten.
DE69730097D1 (de) Verfahren und Vorrichtung zur Behandlung von Wafers
DE69425590T2 (de) Verfahren und Gerät zur Plasmabehandlung von Werkstücken
DE69623967T2 (de) Verfahren und vorrichtung zur thermischen behandlung von halbleitersubstraten
DE69412168D1 (de) Oberflächenbehandeltes Substrat und Verfahren zu seiner Herstellung
DE69701714D1 (de) Verfahren zur behandlung von glassubstraten
DE69528743D1 (de) Verfahren und Vorrichtung zur Plasmabehandlung
DE69702271D1 (de) Verfahren zur Behandlung einer metallischen Oberfläche und Herstellung eines Kochgeschirrs
DE60023623D1 (de) Vorrichtung und Verfahren zur Behandlung leicht polymerisierbarer Komponenten
DE69624665D1 (de) Verfahren zur Oberflächenbehandlung von Substraten und nach diesem Verfahren behandelte Substrate
DE69511393D1 (de) Polymerzusammensetzung und verfahren zur behandlung von metalloberflächen
DE59400947D1 (de) Verfahren zur plasmabehandlung von antiballistisch wirksamen materialien
DE69516069D1 (de) Verfahren zum Reinigen von Substraten und Herstellen von Schutzschichten
DE69838116D1 (de) Verfahren zur Behandlung einer Substratoberfläche und Behandlungsmittel hierfür
DE59913615D1 (de) Verfahren und vorrichtung zum thermischen behandeln von substraten
DE69510990D1 (de) Verfahren und Vorrichtung zur Behandlung von metallichem Material
DE59911235D1 (de) Verfahren und Einrichtung zur Plasma-Oberflächenbehandlung von Substraten

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee