DE69815412D1 - Verfahren zur Resistbeschichtung und Entwicklung des Resists - Google Patents

Verfahren zur Resistbeschichtung und Entwicklung des Resists

Info

Publication number
DE69815412D1
DE69815412D1 DE69815412T DE69815412T DE69815412D1 DE 69815412 D1 DE69815412 D1 DE 69815412D1 DE 69815412 T DE69815412 T DE 69815412T DE 69815412 T DE69815412 T DE 69815412T DE 69815412 D1 DE69815412 D1 DE 69815412D1
Authority
DE
Germany
Prior art keywords
resist
development
coating
resist coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69815412T
Other languages
English (en)
Other versions
DE69815412T2 (de
Inventor
Kazutoshi Yoshioka
Kunie Ogata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of DE69815412D1 publication Critical patent/DE69815412D1/de
Publication of DE69815412T2 publication Critical patent/DE69815412T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
DE69815412T 1997-01-30 1998-01-29 Verfahren zur Resistbeschichtung und Entwicklung des Resists Expired - Lifetime DE69815412T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1721397 1997-01-30
JP1721397 1997-01-30

Publications (2)

Publication Number Publication Date
DE69815412D1 true DE69815412D1 (de) 2003-07-17
DE69815412T2 DE69815412T2 (de) 2004-05-06

Family

ID=11937677

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69830342T Expired - Lifetime DE69830342T2 (de) 1997-01-30 1998-01-29 Vorrichtung zur Resistbeschichtung und Entwicklung des Resists
DE69815412T Expired - Lifetime DE69815412T2 (de) 1997-01-30 1998-01-29 Verfahren zur Resistbeschichtung und Entwicklung des Resists

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69830342T Expired - Lifetime DE69830342T2 (de) 1997-01-30 1998-01-29 Vorrichtung zur Resistbeschichtung und Entwicklung des Resists

Country Status (6)

Country Link
US (2) US5968691A (de)
EP (2) EP0856774B1 (de)
KR (1) KR100596944B1 (de)
DE (2) DE69830342T2 (de)
SG (1) SG71082A1 (de)
TW (1) TW389949B (de)

Families Citing this family (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG71082A1 (en) * 1997-01-30 2000-03-21 Tokyo Electron Ltd Method and apparatus for coating resist and developing the coated resist
US6658144B1 (en) * 1997-05-23 2003-12-02 Micron Technology, Inc. Diffraction tomography for monitoring latent image formation
US6221787B1 (en) * 1998-04-20 2001-04-24 Tokyo Electron Limited Apparatus and method of forming resist film
US6094965A (en) * 1998-05-29 2000-08-01 Vlsi Technology, Inc. Semiconductor calibration structures and calibration wafers for ascertaining layer alignment during processing and calibrating multiple semiconductor wafer coating systems
US6642155B1 (en) * 1998-06-05 2003-11-04 Micron Technology, Inc. Method for applying a fluid to a rotating silicon wafer surface
US6780461B2 (en) 1998-09-14 2004-08-24 Asml Holding N.V. Environment exchange control for material on a wafer surface
US6254936B1 (en) * 1998-09-14 2001-07-03 Silicon Valley Group, Inc. Environment exchange control for material on a wafer surface
US6616394B1 (en) 1998-12-30 2003-09-09 Silicon Valley Group Apparatus for processing wafers
US6410194B1 (en) * 1999-02-04 2002-06-25 Tokyo Electron Limited Resist film forming method and resist coating apparatus
KR100286348B1 (ko) * 1999-04-02 2001-03-15 김영환 반도체 포토공정의 노광방법
KR100327334B1 (ko) * 1999-07-05 2002-03-06 윤종용 최적의 공정 조건 설정이 가능한 리소그라피 시스템 및 그 운용 방법
KR100336043B1 (ko) * 1999-10-28 2002-05-08 김광교 스피너 장비의 베이크 플레이트 다중 운영 방법
KR100337600B1 (ko) * 2000-04-06 2002-05-22 윤종용 노광 시간 조절 시스템
JP3519669B2 (ja) * 2000-04-25 2004-04-19 東京エレクトロン株式会社 現像処理方法及び現像処理装置
US6737207B2 (en) 2000-04-25 2004-05-18 Nikon Corporation Method for evaluating lithography system and method for adjusting substrate-processing apparatus
US6689519B2 (en) 2000-05-04 2004-02-10 Kla-Tencor Technologies Corp. Methods and systems for lithography process control
US20060141376A1 (en) * 2004-12-22 2006-06-29 Ady Levy Methods and systems for controlling variation in dimensions of patterned features across a wafer
US7108752B2 (en) * 2000-06-05 2006-09-19 Tokyo Electron Limited Liquid processing apparatus and liquid processing method
US6643557B1 (en) * 2000-06-09 2003-11-04 Advanced Micro Devices, Inc. Method and apparatus for using scatterometry to perform feedback and feed-forward control
TWI230390B (en) * 2000-07-11 2005-04-01 Tokyo Electron Ltd Apparatus for determining exposure conditions, method for determining exposure conditions and process apparatus
SG94851A1 (en) 2000-07-12 2003-03-18 Tokyo Electron Ltd Substrate processing apparatus and substrate processing method
WO2002004134A1 (en) * 2000-07-12 2002-01-17 Fsi International, Inc. Thermal processing system and methods for forming low-k dielectric films suitable for incorporation into microelectronic devices
JP3679690B2 (ja) * 2000-07-12 2005-08-03 東京エレクトロン株式会社 基板処理装置
US6838115B2 (en) * 2000-07-12 2005-01-04 Fsi International, Inc. Thermal processing system and methods for forming low-k dielectric films suitable for incorporation into microelectronic devices
US6549822B1 (en) * 2000-07-25 2003-04-15 Advanced Micro Devices, Inc. Method and apparatus for control of multi-cup semiconductor manufacturing tracks
JP3910791B2 (ja) * 2000-09-19 2007-04-25 東京エレクトロン株式会社 基板の熱処理方法及び基板の熱処理装置
US7349090B2 (en) * 2000-09-20 2008-03-25 Kla-Tencor Technologies Corp. Methods and systems for determining a property of a specimen prior to, during, or subsequent to lithography
US6694284B1 (en) 2000-09-20 2004-02-17 Kla-Tencor Technologies Corp. Methods and systems for determining at least four properties of a specimen
US6673637B2 (en) 2000-09-20 2004-01-06 Kla-Tencor Technologies Methods and systems for determining a presence of macro defects and overlay of a specimen
US6782337B2 (en) 2000-09-20 2004-08-24 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension an a presence of defects on a specimen
US6812045B1 (en) 2000-09-20 2004-11-02 Kla-Tencor, Inc. Methods and systems for determining a characteristic of a specimen prior to, during, or subsequent to ion implantation
US6891627B1 (en) 2000-09-20 2005-05-10 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension and overlay of a specimen
US6950196B2 (en) * 2000-09-20 2005-09-27 Kla-Tencor Technologies Corp. Methods and systems for determining a thickness of a structure on a specimen and at least one additional property of the specimen
KR100811964B1 (ko) * 2000-09-28 2008-03-10 동경 엘렉트론 주식회사 레지스트 패턴 형성장치 및 그 방법
US6478484B1 (en) 2000-10-24 2002-11-12 Advanced Micro Devices, Inc. Feed-forward mechanism from latent images to developer system for photoresist linewidth control
JP3598054B2 (ja) * 2000-11-06 2004-12-08 東京エレクトロン株式会社 塗布膜形成装置
US6560506B2 (en) * 2000-12-04 2003-05-06 Advanced Micro Devices, Inc. Method and apparatus for control for semiconductor processing for reducing effects of environmental effects
AU2002222484A1 (en) * 2000-12-12 2002-06-24 Consellation Trid Inc Photolithographic method including measurement of the latent image
KR20020060282A (ko) * 2001-01-10 2002-07-18 윤종용 리소그래피 시스템에서 노광 제어방법 및 노광 제어장치
JP3906035B2 (ja) * 2001-03-29 2007-04-18 株式会社東芝 半導体製造装置の制御方法
US6561706B2 (en) 2001-06-28 2003-05-13 Advanced Micro Devices, Inc. Critical dimension monitoring from latent image
KR100488753B1 (ko) * 2001-07-23 2005-05-11 다이닛뽕스크린 세이조오 가부시키가이샤 기판처리방법 및 그 장치
US6451621B1 (en) * 2002-01-16 2002-09-17 Advanced Micro Devices, Inc. Using scatterometry to measure resist thickness and control implant
EP1540259A2 (de) 2002-09-10 2005-06-15 FSI International, Inc. WûRMEVERFAHRENSSTATION MIT BEHEIZTEM DECKEL
EP1459887A3 (de) * 2003-03-20 2005-03-16 Fuji Photo Film Co., Ltd. Bilderzeugungsmethode und Bildaufzeichnungsgerät
US7135259B2 (en) * 2003-05-28 2006-11-14 Taiwan Semiconductor Manufacturing Co., Ltd. Scatterometric method of monitoring hot plate temperature and facilitating critical dimension control
JP4127664B2 (ja) * 2003-06-30 2008-07-30 株式会社東芝 現像処理装置の調整方法
US7198873B2 (en) * 2003-11-18 2007-04-03 Asml Netherlands B.V. Lithographic processing optimization based on hypersampled correlations
JP2005164633A (ja) * 2003-11-28 2005-06-23 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物及びレジストパターン形成方法
EP1709490B1 (de) * 2003-12-19 2010-08-04 International Business Machines Corporation Differentielle metrologie für kritische abmessung und überlagerung
JP4069081B2 (ja) * 2004-01-13 2008-03-26 東京エレクトロン株式会社 位置調整方法及び基板処理システム
JP4444090B2 (ja) * 2004-12-13 2010-03-31 東京エレクトロン株式会社 熱処理板の温度設定方法，熱処理板の温度設定装置，プログラム及びプログラムを記録したコンピュータ読み取り可能な記録媒体
US7798764B2 (en) 2005-12-22 2010-09-21 Applied Materials, Inc. Substrate processing sequence in a cartesian robot cluster tool
US7371022B2 (en) * 2004-12-22 2008-05-13 Sokudo Co., Ltd. Developer endpoint detection in a track lithography system
US7651306B2 (en) 2004-12-22 2010-01-26 Applied Materials, Inc. Cartesian robot cluster tool architecture
US7819079B2 (en) 2004-12-22 2010-10-26 Applied Materials, Inc. Cartesian cluster tool configuration for lithography type processes
US7699021B2 (en) 2004-12-22 2010-04-20 Sokudo Co., Ltd. Cluster tool substrate throughput optimization
JP4509820B2 (ja) * 2005-02-15 2010-07-21 東京エレクトロン株式会社 熱処理板の温度設定方法，熱処理板の温度設定装置，プログラム及びプログラムを記録したコンピュータ読み取り可能な記録媒体
US20060222975A1 (en) * 2005-04-02 2006-10-05 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated optical metrology and lithographic process track for dynamic critical dimension control
US7445446B2 (en) 2006-09-29 2008-11-04 Tokyo Electron Limited Method for in-line monitoring and controlling in heat-treating of resist coated wafers
US20080233269A1 (en) * 2007-03-20 2008-09-25 Tokyo Electron Limited Apparatus and methods for applying a layer of a spin-on material on a series of substrates
JP2008250139A (ja) * 2007-03-30 2008-10-16 Fujifilm Corp 露光装置における露光方法及び露光装置
US10794872B2 (en) * 2015-11-16 2020-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Acoustic measurement of fabrication equipment clearance
CN108946656A (zh) * 2017-05-25 2018-12-07 联华电子股份有限公司 半导体制作工艺
US10274847B2 (en) * 2017-09-19 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Humidity control in EUV lithography
US20210016394A1 (en) * 2019-07-18 2021-01-21 General Electric Company System and methods for compensating for calibration plate irregularities in additive manufacturing systems
JP7270509B2 (ja) * 2019-09-06 2023-05-10 東京エレクトロン株式会社 処理装置を検査するシステム及び方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0230194A (ja) 1988-07-20 1990-01-31 Toshiba Corp 面実装部品の実装方法
US5393624A (en) * 1988-07-29 1995-02-28 Tokyo Electron Limited Method and apparatus for manufacturing a semiconductor device
JPH07211630A (ja) * 1994-01-26 1995-08-11 Sony Corp パターン形成方法及びその装置
JPH08111370A (ja) * 1994-10-12 1996-04-30 Mitsubishi Electric Corp 微細レジストパターンの形成方法およびポストエキスポージャーベーク装置
TW297910B (de) 1995-02-02 1997-02-11 Tokyo Electron Co Ltd
US5656182A (en) * 1995-02-21 1997-08-12 Lucent Technologies Inc. Process for fabricating a device in which the process is controlled by near-field imaging latent features introduced into energy sensitive resist materials
SG71082A1 (en) * 1997-01-30 2000-03-21 Tokyo Electron Ltd Method and apparatus for coating resist and developing the coated resist

Also Published As

Publication number Publication date
DE69830342T2 (de) 2005-11-17
DE69830342D1 (de) 2005-06-30
DE69815412T2 (de) 2004-05-06
EP0856774A1 (de) 1998-08-05
TW389949B (en) 2000-05-11
EP1308783A3 (de) 2003-06-04
SG71082A1 (en) 2000-03-21
KR19980070956A (ko) 1998-10-26
US5968691A (en) 1999-10-19
US6051349A (en) 2000-04-18
EP1308783B1 (de) 2005-05-25
KR100596944B1 (ko) 2006-09-06
EP0856774B1 (de) 2003-06-11
EP1308783A2 (de) 2003-05-07

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