DE60022415D1 - Verfahren zur Herstellung von Resistmustern - Google Patents
Verfahren zur Herstellung von ResistmusternInfo
- Publication number
- DE60022415D1 DE60022415D1 DE60022415T DE60022415T DE60022415D1 DE 60022415 D1 DE60022415 D1 DE 60022415D1 DE 60022415 T DE60022415 T DE 60022415T DE 60022415 T DE60022415 T DE 60022415T DE 60022415 D1 DE60022415 D1 DE 60022415D1
- Authority
- DE
- Germany
- Prior art keywords
- preparation
- resist patterns
- resist
- patterns
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
- C08F212/22—Oxygen
- C08F212/24—Phenols or alcohols
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/04—Acids; Metal salts or ammonium salts thereof
- C08F220/06—Acrylic acid; Methacrylic acid; Metal salts or ammonium salts thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/115—Cationic or anionic
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP05980899A JP4019403B2 (ja) | 1999-03-08 | 1999-03-08 | レジストパターンの形成方法 |
JP5980899 | 1999-03-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60022415D1 true DE60022415D1 (de) | 2005-10-13 |
DE60022415T2 DE60022415T2 (de) | 2006-06-29 |
Family
ID=13123925
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60022415T Expired - Lifetime DE60022415T2 (de) | 1999-03-08 | 2000-03-07 | Verfahren zur Herstellung von Resistmustern |
Country Status (7)
Country | Link |
---|---|
US (1) | US6403288B1 (de) |
EP (1) | EP1035436B1 (de) |
JP (1) | JP4019403B2 (de) |
KR (1) | KR100675237B1 (de) |
DE (1) | DE60022415T2 (de) |
SG (1) | SG86379A1 (de) |
TW (1) | TWI263860B (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3961139B2 (ja) * | 1998-12-24 | 2007-08-22 | 富士フイルム株式会社 | ポジ型感光性組成物 |
JP4694686B2 (ja) * | 2000-08-31 | 2011-06-08 | 東京応化工業株式会社 | 半導体素子製造方法 |
JP4199914B2 (ja) * | 2000-11-29 | 2008-12-24 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
WO2002046841A1 (fr) * | 2000-12-05 | 2002-06-13 | Kansai Research Institute. Inc. | Constituants actifs et compositions de resine photosensible les contenant |
JP3901645B2 (ja) * | 2003-02-17 | 2007-04-04 | 松下電器産業株式会社 | パターン形成方法 |
KR100833839B1 (ko) * | 2004-07-01 | 2008-06-02 | 도오꾜오까고오교 가부시끼가이샤 | 포지티브형 레지스트 조성물 및 레지스트 패턴 형성 방법 |
US20070031758A1 (en) * | 2005-08-03 | 2007-02-08 | Jsr Corporation | Positive-type radiation-sensitive resin composition for producing a metal-plating formed material, transcription film and production method of a metal-plating formed material |
JP4715671B2 (ja) * | 2005-08-03 | 2011-07-06 | Jsr株式会社 | メッキ造形物製造用ポジ型感放射線性樹脂組成物、転写フィルムおよびメッキ造形物の製造方法 |
JP2008071974A (ja) * | 2006-09-14 | 2008-03-27 | Nec Electronics Corp | パターン形成方法およびこれを用いた半導体装置の製造方法 |
CN101192000B (zh) * | 2007-11-15 | 2010-06-02 | 中国航天科技集团公司第五研究院第五一○研究所 | 中心对称连续微结构衍射元件掩模的制作方法 |
JP5618576B2 (ja) * | 2010-03-05 | 2014-11-05 | 富士フイルム株式会社 | パターン形成方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5238775A (en) * | 1990-02-20 | 1993-08-24 | Japan Synthetic Rubber Co., Ltd. | Radiation-sensitive resin composition |
JPH0721055B2 (ja) * | 1991-10-31 | 1995-03-08 | チッソ株式会社 | 二酸化硫黄と核置換スチレン誘導体との共重合体 |
JP3290234B2 (ja) * | 1993-03-26 | 2002-06-10 | 富士写真フイルム株式会社 | ポジ型感光性組成物 |
JP3116751B2 (ja) | 1993-12-03 | 2000-12-11 | ジェイエスアール株式会社 | 感放射線性樹脂組成物 |
JP3340864B2 (ja) * | 1994-10-26 | 2002-11-05 | 富士写真フイルム株式会社 | ポジ型化学増幅レジスト組成物 |
TW482943B (en) * | 1996-04-25 | 2002-04-11 | Fuji Photo Film Co Ltd | Positive working photosensitive composition |
JP3808140B2 (ja) * | 1996-09-10 | 2006-08-09 | Azエレクトロニックマテリアルズ株式会社 | 新規酸感応性基で保護されたヒドロキシスチレン重合体およびこれらを含む放射線感応性材料 |
JP3376222B2 (ja) * | 1996-10-25 | 2003-02-10 | クラリアント インターナショナル リミテッド | 放射線感応性組成物 |
KR100551653B1 (ko) * | 1997-08-18 | 2006-05-25 | 제이에스알 가부시끼가이샤 | 감방사선성수지조성물 |
-
1999
- 1999-03-08 JP JP05980899A patent/JP4019403B2/ja not_active Expired - Lifetime
-
2000
- 2000-03-06 SG SG200001249A patent/SG86379A1/en unknown
- 2000-03-07 US US09/520,345 patent/US6403288B1/en not_active Expired - Lifetime
- 2000-03-07 KR KR1020000011210A patent/KR100675237B1/ko not_active IP Right Cessation
- 2000-03-07 DE DE60022415T patent/DE60022415T2/de not_active Expired - Lifetime
- 2000-03-07 EP EP00104826A patent/EP1035436B1/de not_active Expired - Lifetime
- 2000-03-08 TW TW089104193A patent/TWI263860B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US6403288B1 (en) | 2002-06-11 |
EP1035436A1 (de) | 2000-09-13 |
KR20000076781A (ko) | 2000-12-26 |
TWI263860B (en) | 2006-10-11 |
KR100675237B1 (ko) | 2007-01-29 |
SG86379A1 (en) | 2002-02-19 |
JP2000258912A (ja) | 2000-09-22 |
EP1035436B1 (de) | 2005-09-07 |
DE60022415T2 (de) | 2006-06-29 |
JP4019403B2 (ja) | 2007-12-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |