JP2002252230A - ヘテロ接合バイポーラトランジスタ - Google Patents

ヘテロ接合バイポーラトランジスタ

Info

Publication number
JP2002252230A
JP2002252230A JP2002004003A JP2002004003A JP2002252230A JP 2002252230 A JP2002252230 A JP 2002252230A JP 2002004003 A JP2002004003 A JP 2002004003A JP 2002004003 A JP2002004003 A JP 2002004003A JP 2002252230 A JP2002252230 A JP 2002252230A
Authority
JP
Japan
Prior art keywords
emitter
region
base
collector
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002004003A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002252230A5 (enExample
Inventor
Marco Mastrapasqua
マストラパスカ マルコ
Michel R Frei
アール．フレイ マイケル
Clifford Alan King
アラン キング クリフォード
Yi Ma
マ イー
Kwok K Ng
ケー．ヌグ ウォック
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agere Systems LLC
Original Assignee
Agere Systems Guardian Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agere Systems Guardian Corp filed Critical Agere Systems Guardian Corp
Publication of JP2002252230A publication Critical patent/JP2002252230A/ja
Publication of JP2002252230A5 publication Critical patent/JP2002252230A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H10D10/891—Vertical heterojunction BJTs comprising lattice-mismatched active layers, e.g. SiGe strained-layer transistors

Landscapes

  • Bipolar Transistors (AREA)
JP2002004003A 2001-01-12 2002-01-11 ヘテロ接合バイポーラトランジスタ Pending JP2002252230A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/759120 2001-01-12
US09/759,120 US6509242B2 (en) 2001-01-12 2001-01-12 Heterojunction bipolar transistor

Publications (2)

Publication Number Publication Date
JP2002252230A true JP2002252230A (ja) 2002-09-06
JP2002252230A5 JP2002252230A5 (enExample) 2005-08-04

Family

ID=25054482

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002004003A Pending JP2002252230A (ja) 2001-01-12 2002-01-11 ヘテロ接合バイポーラトランジスタ

Country Status (3)

Country Link
US (1) US6509242B2 (enExample)
JP (1) JP2002252230A (enExample)
TW (1) TW569318B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040038511A (ko) * 2002-11-01 2004-05-08 한국전자통신연구원 자기정렬형 이종접합 쌍극자 트랜지스터 및 그의 제조 방법

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6674102B2 (en) * 2001-01-25 2004-01-06 International Business Machines Corporation Sti pull-down to control SiGe facet growth
US6426265B1 (en) 2001-01-30 2002-07-30 International Business Machines Corporation Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
JP4168615B2 (ja) * 2001-08-28 2008-10-22 ソニー株式会社 半導体装置および半導体装置の製造方法
US6670654B2 (en) * 2002-01-09 2003-12-30 International Business Machines Corporation Silicon germanium heterojunction bipolar transistor with carbon incorporation
JP4308674B2 (ja) * 2002-04-16 2009-08-05 株式会社ルネサステクノロジ 半導体装置の製造方法
US6767842B2 (en) * 2002-07-09 2004-07-27 Lsi Logic Corporation Implementation of Si-Ge HBT with CMOS process
US6774002B2 (en) * 2002-10-23 2004-08-10 United Microelectronics Corp. Structure and method for forming self-aligned bipolar junction transistor with expitaxy base
US6743701B1 (en) 2002-12-20 2004-06-01 Lsi Logic Corporation Method for the formation of active area utilizing reverse trench isolation
DE10324065A1 (de) * 2003-05-27 2004-12-30 Texas Instruments Deutschland Gmbh Verfahren zur Herstellung eines integrierten Silizium-Germanium-Heterobipolartranistors und ein integrierter Silizium-Germanium Heterobipolartransitor
TWI250640B (en) * 2003-06-19 2006-03-01 Samsung Electronics Co Ltd Bipolar junction transistors and methods of manufacturing the same
KR100498503B1 (ko) * 2003-06-19 2005-07-01 삼성전자주식회사 바이폴라 접합 트랜지스터 및 그 제조 방법
JP4886964B2 (ja) * 2003-07-03 2012-02-29 株式会社日立製作所 半導体装置及びその製造方法
US6869852B1 (en) 2004-01-09 2005-03-22 International Business Machines Corporation Self-aligned raised extrinsic base bipolar transistor structure and method
US7037798B2 (en) * 2004-01-09 2006-05-02 International Business Machines Corporation Bipolar transistor structure with self-aligned raised extrinsic base and methods
CN100521114C (zh) * 2004-01-23 2009-07-29 Nxp股份有限公司 制造单晶发射区的方法
US7253073B2 (en) * 2004-01-23 2007-08-07 International Business Machines Corporation Structure and method for hyper-abrupt junction varactors
US20070069295A1 (en) * 2005-09-28 2007-03-29 Kerr Daniel C Process to integrate fabrication of bipolar devices into a CMOS process flow
US7300849B2 (en) * 2005-11-04 2007-11-27 Atmel Corporation Bandgap engineered mono-crystalline silicon cap layers for SiGe HBT performance enhancement
US20070102729A1 (en) * 2005-11-04 2007-05-10 Enicks Darwin G Method and system for providing a heterojunction bipolar transistor having SiGe extensions
US7651919B2 (en) * 2005-11-04 2010-01-26 Atmel Corporation Bandgap and recombination engineered emitter layers for SiGe HBT performance optimization
US7439558B2 (en) 2005-11-04 2008-10-21 Atmel Corporation Method and system for controlled oxygen incorporation in compound semiconductor films for device performance enhancement
US7611955B2 (en) * 2006-06-15 2009-11-03 Freescale Semiconductor, Inc. Method of forming a bipolar transistor and semiconductor component thereof
CN101479837B (zh) * 2006-06-28 2010-10-06 Nxp股份有限公司 制造双极晶体管的方法以及采用该方法得到的双极晶体管
US7759702B2 (en) * 2008-01-04 2010-07-20 International Business Machines Corporation Hetero-junction bipolar transistor (HBT) and structure thereof
US9111986B2 (en) 2014-01-09 2015-08-18 International Business Machines Corporation Self-aligned emitter-base-collector bipolar junction transistors with a single crystal raised extrinsic base
US9831328B2 (en) 2015-02-12 2017-11-28 Taiwan Semiconductor Manufacturing Co., Ltd. Bipolar junction transistor (BJT) base conductor pullback
US10032868B2 (en) * 2016-09-09 2018-07-24 Texas Instruments Incorporated High performance super-beta NPN (SBNPN)

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0785476B2 (ja) * 1991-06-14 1995-09-13 インターナショナル・ビジネス・マシーンズ・コーポレイション エミッタ埋め込み型バイポーラ・トランジスタ構造
JP3152959B2 (ja) * 1991-07-12 2001-04-03 富士通株式会社 半導体装置及びその製造方法
JP2855908B2 (ja) * 1991-09-05 1999-02-10 日本電気株式会社 半導体装置及びその製造方法
JP2727818B2 (ja) * 1991-09-17 1998-03-18 日本電気株式会社 半導体装置
JP3132101B2 (ja) * 1991-11-20 2001-02-05 日本電気株式会社 半導体装置の製造方法
JP3156436B2 (ja) * 1993-04-05 2001-04-16 日本電気株式会社 ヘテロ接合バイポーラトランジスタ
JP2630237B2 (ja) * 1993-12-22 1997-07-16 日本電気株式会社 半導体装置及びその製造方法
JP2720793B2 (ja) * 1994-05-12 1998-03-04 日本電気株式会社 半導体装置の製造方法
JP2606141B2 (ja) * 1994-06-16 1997-04-30 日本電気株式会社 半導体装置およびその製造方法
JP2679639B2 (ja) * 1994-09-12 1997-11-19 日本電気株式会社 半導体装置及びその製造方法
US5620908A (en) * 1994-09-19 1997-04-15 Kabushiki Kaisha Toshiba Manufacturing method of semiconductor device comprising BiCMOS transistor
US5620907A (en) * 1995-04-10 1997-04-15 Lucent Technologies Inc. Method for making a heterojunction bipolar transistor
EP0800705B1 (en) * 1995-10-20 2000-07-12 Koninklijke Philips Electronics N.V. Manufacture of a semiconductor device with selectively deposited semiconductor zone
EP0818829A1 (en) * 1996-07-12 1998-01-14 Hitachi, Ltd. Bipolar transistor and method of fabricating it
KR100233834B1 (ko) * 1996-12-09 1999-12-01 한흥섭 규소/규소게르마늄 쌍극자 트랜지스터 제조방법
US5882976A (en) * 1997-10-01 1999-03-16 National Semiconductor Corporation Method of fabricating a self-aligned double polysilicon NPN transistor with poly etch stop

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040038511A (ko) * 2002-11-01 2004-05-08 한국전자통신연구원 자기정렬형 이종접합 쌍극자 트랜지스터 및 그의 제조 방법

Also Published As

Publication number Publication date
US6509242B2 (en) 2003-01-21
US20020093031A1 (en) 2002-07-18
TW569318B (en) 2004-01-01

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