TW569318B - Heterojunction bipolar transistor - Google Patents

Heterojunction bipolar transistor Download PDF

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Publication number
TW569318B
TW569318B TW091100151A TW91100151A TW569318B TW 569318 B TW569318 B TW 569318B TW 091100151 A TW091100151 A TW 091100151A TW 91100151 A TW91100151 A TW 91100151A TW 569318 B TW569318 B TW 569318B
Authority
TW
Taiwan
Prior art keywords
region
base
emitter
spacer
silicon
Prior art date
Application number
TW091100151A
Other languages
English (en)
Chinese (zh)
Inventor
Marco Mastrapasqua
Michel R Frei
Clifford Alan King
Yi Ma
Kwok K Ng
Original Assignee
Agere Syst Guardian Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agere Syst Guardian Corp filed Critical Agere Syst Guardian Corp
Application granted granted Critical
Publication of TW569318B publication Critical patent/TW569318B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H10D10/891—Vertical heterojunction BJTs comprising lattice-mismatched active layers, e.g. SiGe strained-layer transistors

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  • Bipolar Transistors (AREA)
TW091100151A 2001-01-12 2002-01-08 Heterojunction bipolar transistor TW569318B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/759,120 US6509242B2 (en) 2001-01-12 2001-01-12 Heterojunction bipolar transistor

Publications (1)

Publication Number Publication Date
TW569318B true TW569318B (en) 2004-01-01

Family

ID=25054482

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091100151A TW569318B (en) 2001-01-12 2002-01-08 Heterojunction bipolar transistor

Country Status (3)

Country Link
US (1) US6509242B2 (enExample)
JP (1) JP2002252230A (enExample)
TW (1) TW569318B (enExample)

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US6674102B2 (en) * 2001-01-25 2004-01-06 International Business Machines Corporation Sti pull-down to control SiGe facet growth
US6426265B1 (en) * 2001-01-30 2002-07-30 International Business Machines Corporation Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
JP4168615B2 (ja) * 2001-08-28 2008-10-22 ソニー株式会社 半導体装置および半導体装置の製造方法
US6670654B2 (en) * 2002-01-09 2003-12-30 International Business Machines Corporation Silicon germanium heterojunction bipolar transistor with carbon incorporation
JP4308674B2 (ja) * 2002-04-16 2009-08-05 株式会社ルネサステクノロジ 半導体装置の製造方法
US6767842B2 (en) * 2002-07-09 2004-07-27 Lsi Logic Corporation Implementation of Si-Ge HBT with CMOS process
US6774002B2 (en) * 2002-10-23 2004-08-10 United Microelectronics Corp. Structure and method for forming self-aligned bipolar junction transistor with expitaxy base
KR20040038511A (ko) * 2002-11-01 2004-05-08 한국전자통신연구원 자기정렬형 이종접합 쌍극자 트랜지스터 및 그의 제조 방법
US6743701B1 (en) 2002-12-20 2004-06-01 Lsi Logic Corporation Method for the formation of active area utilizing reverse trench isolation
DE10324065A1 (de) * 2003-05-27 2004-12-30 Texas Instruments Deutschland Gmbh Verfahren zur Herstellung eines integrierten Silizium-Germanium-Heterobipolartranistors und ein integrierter Silizium-Germanium Heterobipolartransitor
KR100498503B1 (ko) * 2003-06-19 2005-07-01 삼성전자주식회사 바이폴라 접합 트랜지스터 및 그 제조 방법
TWI250640B (en) * 2003-06-19 2006-03-01 Samsung Electronics Co Ltd Bipolar junction transistors and methods of manufacturing the same
JP4886964B2 (ja) * 2003-07-03 2012-02-29 株式会社日立製作所 半導体装置及びその製造方法
US6869852B1 (en) 2004-01-09 2005-03-22 International Business Machines Corporation Self-aligned raised extrinsic base bipolar transistor structure and method
US7037798B2 (en) * 2004-01-09 2006-05-02 International Business Machines Corporation Bipolar transistor structure with self-aligned raised extrinsic base and methods
CN100521114C (zh) * 2004-01-23 2009-07-29 Nxp股份有限公司 制造单晶发射区的方法
US7253073B2 (en) * 2004-01-23 2007-08-07 International Business Machines Corporation Structure and method for hyper-abrupt junction varactors
US20070069295A1 (en) * 2005-09-28 2007-03-29 Kerr Daniel C Process to integrate fabrication of bipolar devices into a CMOS process flow
US20070102729A1 (en) * 2005-11-04 2007-05-10 Enicks Darwin G Method and system for providing a heterojunction bipolar transistor having SiGe extensions
US7651919B2 (en) * 2005-11-04 2010-01-26 Atmel Corporation Bandgap and recombination engineered emitter layers for SiGe HBT performance optimization
US7300849B2 (en) * 2005-11-04 2007-11-27 Atmel Corporation Bandgap engineered mono-crystalline silicon cap layers for SiGe HBT performance enhancement
US7439558B2 (en) 2005-11-04 2008-10-21 Atmel Corporation Method and system for controlled oxygen incorporation in compound semiconductor films for device performance enhancement
US7611955B2 (en) * 2006-06-15 2009-11-03 Freescale Semiconductor, Inc. Method of forming a bipolar transistor and semiconductor component thereof
US8133791B2 (en) * 2006-06-28 2012-03-13 Nxp B.V. Method of manufacturing a bipolar transistor and bipolar transistor obtained therewith
US7759702B2 (en) * 2008-01-04 2010-07-20 International Business Machines Corporation Hetero-junction bipolar transistor (HBT) and structure thereof
US9111986B2 (en) 2014-01-09 2015-08-18 International Business Machines Corporation Self-aligned emitter-base-collector bipolar junction transistors with a single crystal raised extrinsic base
US9831328B2 (en) 2015-02-12 2017-11-28 Taiwan Semiconductor Manufacturing Co., Ltd. Bipolar junction transistor (BJT) base conductor pullback
US10032868B2 (en) * 2016-09-09 2018-07-24 Texas Instruments Incorporated High performance super-beta NPN (SBNPN)

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JPH0785476B2 (ja) * 1991-06-14 1995-09-13 インターナショナル・ビジネス・マシーンズ・コーポレイション エミッタ埋め込み型バイポーラ・トランジスタ構造
JP3152959B2 (ja) * 1991-07-12 2001-04-03 富士通株式会社 半導体装置及びその製造方法
JP2855908B2 (ja) * 1991-09-05 1999-02-10 日本電気株式会社 半導体装置及びその製造方法
JP2727818B2 (ja) * 1991-09-17 1998-03-18 日本電気株式会社 半導体装置
JP3132101B2 (ja) * 1991-11-20 2001-02-05 日本電気株式会社 半導体装置の製造方法
JP3156436B2 (ja) * 1993-04-05 2001-04-16 日本電気株式会社 ヘテロ接合バイポーラトランジスタ
JP2630237B2 (ja) * 1993-12-22 1997-07-16 日本電気株式会社 半導体装置及びその製造方法
JP2720793B2 (ja) * 1994-05-12 1998-03-04 日本電気株式会社 半導体装置の製造方法
JP2606141B2 (ja) * 1994-06-16 1997-04-30 日本電気株式会社 半導体装置およびその製造方法
JP2679639B2 (ja) * 1994-09-12 1997-11-19 日本電気株式会社 半導体装置及びその製造方法
US5620908A (en) * 1994-09-19 1997-04-15 Kabushiki Kaisha Toshiba Manufacturing method of semiconductor device comprising BiCMOS transistor
US5620907A (en) * 1995-04-10 1997-04-15 Lucent Technologies Inc. Method for making a heterojunction bipolar transistor
JPH10511507A (ja) * 1995-10-20 1998-11-04 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ 選択的に堆積された半導体領域を有する半導体装置の製造
EP0818829A1 (en) * 1996-07-12 1998-01-14 Hitachi, Ltd. Bipolar transistor and method of fabricating it
KR100233834B1 (ko) * 1996-12-09 1999-12-01 한흥섭 규소/규소게르마늄 쌍극자 트랜지스터 제조방법
US5882976A (en) * 1997-10-01 1999-03-16 National Semiconductor Corporation Method of fabricating a self-aligned double polysilicon NPN transistor with poly etch stop

Also Published As

Publication number Publication date
US20020093031A1 (en) 2002-07-18
US6509242B2 (en) 2003-01-21
JP2002252230A (ja) 2002-09-06

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