JP2002252230A5 - - Google Patents

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Publication number
JP2002252230A5
JP2002252230A5 JP2002004003A JP2002004003A JP2002252230A5 JP 2002252230 A5 JP2002252230 A5 JP 2002252230A5 JP 2002004003 A JP2002004003 A JP 2002004003A JP 2002004003 A JP2002004003 A JP 2002004003A JP 2002252230 A5 JP2002252230 A5 JP 2002252230A5
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JP
Japan
Prior art keywords
region
emitter
transistor
collector
base region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002004003A
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English (en)
Japanese (ja)
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JP2002252230A (ja
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Publication date
Priority claimed from US09/759,120 external-priority patent/US6509242B2/en
Application filed filed Critical
Publication of JP2002252230A publication Critical patent/JP2002252230A/ja
Publication of JP2002252230A5 publication Critical patent/JP2002252230A5/ja
Pending legal-status Critical Current

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JP2002004003A 2001-01-12 2002-01-11 ヘテロ接合バイポーラトランジスタ Pending JP2002252230A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/759,120 US6509242B2 (en) 2001-01-12 2001-01-12 Heterojunction bipolar transistor
US09/759120 2001-01-12

Publications (2)

Publication Number Publication Date
JP2002252230A JP2002252230A (ja) 2002-09-06
JP2002252230A5 true JP2002252230A5 (enExample) 2005-08-04

Family

ID=25054482

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002004003A Pending JP2002252230A (ja) 2001-01-12 2002-01-11 ヘテロ接合バイポーラトランジスタ

Country Status (3)

Country Link
US (1) US6509242B2 (enExample)
JP (1) JP2002252230A (enExample)
TW (1) TW569318B (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
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US6674102B2 (en) * 2001-01-25 2004-01-06 International Business Machines Corporation Sti pull-down to control SiGe facet growth
US6426265B1 (en) * 2001-01-30 2002-07-30 International Business Machines Corporation Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
JP4168615B2 (ja) * 2001-08-28 2008-10-22 ソニー株式会社 半導体装置および半導体装置の製造方法
US6670654B2 (en) * 2002-01-09 2003-12-30 International Business Machines Corporation Silicon germanium heterojunction bipolar transistor with carbon incorporation
JP4308674B2 (ja) * 2002-04-16 2009-08-05 株式会社ルネサステクノロジ 半導体装置の製造方法
US6767842B2 (en) * 2002-07-09 2004-07-27 Lsi Logic Corporation Implementation of Si-Ge HBT with CMOS process
US6774002B2 (en) * 2002-10-23 2004-08-10 United Microelectronics Corp. Structure and method for forming self-aligned bipolar junction transistor with expitaxy base
KR20040038511A (ko) * 2002-11-01 2004-05-08 한국전자통신연구원 자기정렬형 이종접합 쌍극자 트랜지스터 및 그의 제조 방법
US6743701B1 (en) 2002-12-20 2004-06-01 Lsi Logic Corporation Method for the formation of active area utilizing reverse trench isolation
DE10324065A1 (de) * 2003-05-27 2004-12-30 Texas Instruments Deutschland Gmbh Verfahren zur Herstellung eines integrierten Silizium-Germanium-Heterobipolartranistors und ein integrierter Silizium-Germanium Heterobipolartransitor
KR100498503B1 (ko) * 2003-06-19 2005-07-01 삼성전자주식회사 바이폴라 접합 트랜지스터 및 그 제조 방법
TWI250640B (en) * 2003-06-19 2006-03-01 Samsung Electronics Co Ltd Bipolar junction transistors and methods of manufacturing the same
JP4886964B2 (ja) * 2003-07-03 2012-02-29 株式会社日立製作所 半導体装置及びその製造方法
US6869852B1 (en) 2004-01-09 2005-03-22 International Business Machines Corporation Self-aligned raised extrinsic base bipolar transistor structure and method
US7037798B2 (en) * 2004-01-09 2006-05-02 International Business Machines Corporation Bipolar transistor structure with self-aligned raised extrinsic base and methods
CN100521114C (zh) * 2004-01-23 2009-07-29 Nxp股份有限公司 制造单晶发射区的方法
US7253073B2 (en) * 2004-01-23 2007-08-07 International Business Machines Corporation Structure and method for hyper-abrupt junction varactors
US20070069295A1 (en) * 2005-09-28 2007-03-29 Kerr Daniel C Process to integrate fabrication of bipolar devices into a CMOS process flow
US20070102729A1 (en) * 2005-11-04 2007-05-10 Enicks Darwin G Method and system for providing a heterojunction bipolar transistor having SiGe extensions
US7651919B2 (en) * 2005-11-04 2010-01-26 Atmel Corporation Bandgap and recombination engineered emitter layers for SiGe HBT performance optimization
US7300849B2 (en) * 2005-11-04 2007-11-27 Atmel Corporation Bandgap engineered mono-crystalline silicon cap layers for SiGe HBT performance enhancement
US7439558B2 (en) 2005-11-04 2008-10-21 Atmel Corporation Method and system for controlled oxygen incorporation in compound semiconductor films for device performance enhancement
US7611955B2 (en) * 2006-06-15 2009-11-03 Freescale Semiconductor, Inc. Method of forming a bipolar transistor and semiconductor component thereof
US8133791B2 (en) * 2006-06-28 2012-03-13 Nxp B.V. Method of manufacturing a bipolar transistor and bipolar transistor obtained therewith
US7759702B2 (en) * 2008-01-04 2010-07-20 International Business Machines Corporation Hetero-junction bipolar transistor (HBT) and structure thereof
US9111986B2 (en) 2014-01-09 2015-08-18 International Business Machines Corporation Self-aligned emitter-base-collector bipolar junction transistors with a single crystal raised extrinsic base
US9831328B2 (en) 2015-02-12 2017-11-28 Taiwan Semiconductor Manufacturing Co., Ltd. Bipolar junction transistor (BJT) base conductor pullback
US10032868B2 (en) * 2016-09-09 2018-07-24 Texas Instruments Incorporated High performance super-beta NPN (SBNPN)

Family Cites Families (16)

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Publication number Priority date Publication date Assignee Title
JPH0785476B2 (ja) * 1991-06-14 1995-09-13 インターナショナル・ビジネス・マシーンズ・コーポレイション エミッタ埋め込み型バイポーラ・トランジスタ構造
JP3152959B2 (ja) * 1991-07-12 2001-04-03 富士通株式会社 半導体装置及びその製造方法
JP2855908B2 (ja) * 1991-09-05 1999-02-10 日本電気株式会社 半導体装置及びその製造方法
JP2727818B2 (ja) * 1991-09-17 1998-03-18 日本電気株式会社 半導体装置
JP3132101B2 (ja) * 1991-11-20 2001-02-05 日本電気株式会社 半導体装置の製造方法
JP3156436B2 (ja) * 1993-04-05 2001-04-16 日本電気株式会社 ヘテロ接合バイポーラトランジスタ
JP2630237B2 (ja) * 1993-12-22 1997-07-16 日本電気株式会社 半導体装置及びその製造方法
JP2720793B2 (ja) * 1994-05-12 1998-03-04 日本電気株式会社 半導体装置の製造方法
JP2606141B2 (ja) * 1994-06-16 1997-04-30 日本電気株式会社 半導体装置およびその製造方法
JP2679639B2 (ja) * 1994-09-12 1997-11-19 日本電気株式会社 半導体装置及びその製造方法
US5620908A (en) * 1994-09-19 1997-04-15 Kabushiki Kaisha Toshiba Manufacturing method of semiconductor device comprising BiCMOS transistor
US5620907A (en) * 1995-04-10 1997-04-15 Lucent Technologies Inc. Method for making a heterojunction bipolar transistor
JPH10511507A (ja) * 1995-10-20 1998-11-04 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ 選択的に堆積された半導体領域を有する半導体装置の製造
EP0818829A1 (en) * 1996-07-12 1998-01-14 Hitachi, Ltd. Bipolar transistor and method of fabricating it
KR100233834B1 (ko) * 1996-12-09 1999-12-01 한흥섭 규소/규소게르마늄 쌍극자 트랜지스터 제조방법
US5882976A (en) * 1997-10-01 1999-03-16 National Semiconductor Corporation Method of fabricating a self-aligned double polysilicon NPN transistor with poly etch stop

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