JP2002250860A - 撮像素子、撮像装置及び情報処理装置 - Google Patents

撮像素子、撮像装置及び情報処理装置

Info

Publication number
JP2002250860A
JP2002250860A JP2001050906A JP2001050906A JP2002250860A JP 2002250860 A JP2002250860 A JP 2002250860A JP 2001050906 A JP2001050906 A JP 2001050906A JP 2001050906 A JP2001050906 A JP 2001050906A JP 2002250860 A JP2002250860 A JP 2002250860A
Authority
JP
Japan
Prior art keywords
light receiving
image sensor
region
imaging device
photographing lens
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001050906A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002250860A5 (enExample
Inventor
Akihiko Nagano
明彦 長野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2001050906A priority Critical patent/JP2002250860A/ja
Priority to US10/083,996 priority patent/US7041950B2/en
Priority to CNB021192928A priority patent/CN1235290C/zh
Publication of JP2002250860A publication Critical patent/JP2002250860A/ja
Publication of JP2002250860A5 publication Critical patent/JP2002250860A5/ja
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/42Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/4209Photoelectric exposure meters for determining the exposure time in recording or reproducing
    • G01J1/4214Photoelectric exposure meters for determining the exposure time in recording or reproducing specially adapted for view-taking apparatus
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60Control of cameras or camera modules
    • H04N23/67Focus control based on electronic image sensor signals
    • H04N23/672Focus control based on electronic image sensor signals based on the phase difference signals
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/46Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50Control of the SSIS exposure
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/702SSIS architectures characterised by non-identical, non-equidistant or non-planar pixel layout
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/703SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/704Pixels specially adapted for focusing, e.g. phase difference pixel sets
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/802Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/18Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/803Pixels having integrated switching, control, storage or amplification elements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/806Optical elements or arrangements associated with the image sensors
    • H10F39/8063Microlenses

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Focusing (AREA)
  • Studio Devices (AREA)
  • Automatic Focus Adjustment (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2001050906A 2001-02-26 2001-02-26 撮像素子、撮像装置及び情報処理装置 Pending JP2002250860A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2001050906A JP2002250860A (ja) 2001-02-26 2001-02-26 撮像素子、撮像装置及び情報処理装置
US10/083,996 US7041950B2 (en) 2001-02-26 2002-02-25 Image sensing element for sensing an image formed by an image sensing lens
CNB021192928A CN1235290C (zh) 2001-02-26 2002-02-26 图像感测元件,图像感测装置和信息处理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001050906A JP2002250860A (ja) 2001-02-26 2001-02-26 撮像素子、撮像装置及び情報処理装置

Publications (2)

Publication Number Publication Date
JP2002250860A true JP2002250860A (ja) 2002-09-06
JP2002250860A5 JP2002250860A5 (enExample) 2004-09-09

Family

ID=18911794

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001050906A Pending JP2002250860A (ja) 2001-02-26 2001-02-26 撮像素子、撮像装置及び情報処理装置

Country Status (3)

Country Link
US (1) US7041950B2 (enExample)
JP (1) JP2002250860A (enExample)
CN (1) CN1235290C (enExample)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007282108A (ja) * 2006-04-11 2007-10-25 Nikon Corp 撮像装置、カメラおよび画像処理方法
US7468746B2 (en) * 2003-01-17 2008-12-23 Fujifilm Corporation Digital camera
US7488923B2 (en) 2005-11-09 2009-02-10 Nikon Corporation Focus detection device, optical system and focus detection method
JP2010160313A (ja) * 2009-01-08 2010-07-22 Sony Corp 撮像素子および撮像装置
US8139139B2 (en) 2007-08-13 2012-03-20 Panasonic Corporation Imaging apparatus with phase difference detecting sensor
JP2012128248A (ja) * 2010-12-16 2012-07-05 Nikon Corp 撮像装置
WO2013094121A1 (ja) * 2011-12-21 2013-06-27 シャープ株式会社 撮像装置および電子情報機器
JP2014116472A (ja) * 2012-12-10 2014-06-26 Canon Inc 固体撮像装置およびその製造方法
JP2016106472A (ja) * 2016-01-07 2016-06-16 株式会社ニコン 撮像装置
JP2018037672A (ja) * 2017-10-18 2018-03-08 キヤノン株式会社 固体撮像装置およびカメラ

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4243462B2 (ja) * 2002-08-19 2009-03-25 富士フイルム株式会社 固体撮像装置および受光素子の感度対応出力調整方法
JP4279562B2 (ja) * 2003-01-17 2009-06-17 富士フイルム株式会社 固体撮像装置の制御方法
US8446508B2 (en) * 2005-07-27 2013-05-21 Sony Corporation Solid state imaging device with optimized locations of internal electrical components
JP2007123414A (ja) * 2005-10-26 2007-05-17 Fujifilm Corp 固体撮像素子
JP5098405B2 (ja) * 2007-04-11 2012-12-12 株式会社ニコン 撮像素子、焦点検出装置および撮像装置
JP5191168B2 (ja) * 2007-06-11 2013-04-24 株式会社ニコン 焦点検出装置および撮像装置
JP5537905B2 (ja) * 2009-11-10 2014-07-02 富士フイルム株式会社 撮像素子及び撮像装置
JP5888914B2 (ja) * 2011-09-22 2016-03-22 キヤノン株式会社 撮像装置およびその制御方法
JP6099373B2 (ja) * 2012-11-29 2017-03-22 オリンパス株式会社 固体撮像装置および電子カメラ
JP2017049318A (ja) * 2015-08-31 2017-03-09 キヤノン株式会社 焦点調節装置及びそれを用いた撮像装置及び焦点調節方法
JP6700751B2 (ja) * 2015-11-30 2020-05-27 キヤノン株式会社 撮像装置、撮像装置の制御方法およびプログラム

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US4185191A (en) * 1978-06-05 1980-01-22 Honeywell Inc. Range determination system
JPS55111928A (en) 1979-02-21 1980-08-29 Ricoh Co Ltd Automatic focusing device
US4410804A (en) * 1981-07-13 1983-10-18 Honeywell Inc. Two dimensional image panel with range measurement capability
JPS58199307A (ja) * 1982-05-18 1983-11-19 Olympus Optical Co Ltd 合焦検出装置
JPS5999407A (ja) 1982-11-29 1984-06-08 Nippon Kogaku Kk <Nikon> Ttl方式の焦点検出装置
JPH0333708A (ja) 1990-07-03 1991-02-14 Minolta Camera Co Ltd ピント検出装置
WO1992017805A1 (fr) * 1991-03-29 1992-10-15 Olympus Optical Co., Ltd. Appareil pour detecter la focalisation automatique
JP3240648B2 (ja) 1991-11-01 2001-12-17 キヤノン株式会社 焦点検出装置
US5751354A (en) * 1994-04-28 1998-05-12 Canon Kabushiki Kaisha Image sensing apparatus and method with exposure performed based on focus evaluation values
JP3434621B2 (ja) 1995-06-14 2003-08-11 オリンパス光学工業株式会社 焦点検出及び測光光学系
JP2000171846A (ja) 1998-10-01 2000-06-23 Asahi Optical Co Ltd カメラの露出制御装置
US6195509B1 (en) * 1998-10-01 2001-02-27 Asahi Kogaku Kogyo Kabushiki Kaisha Exposure control apparatus for a camera
JP4007716B2 (ja) 1999-04-20 2007-11-14 オリンパス株式会社 撮像装置
JP2000330002A (ja) 1999-05-20 2000-11-30 Olympus Optical Co Ltd 測距装置
JP3731392B2 (ja) 1999-07-21 2006-01-05 コニカミノルタフォトイメージング株式会社 焦点検出装置

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7468746B2 (en) * 2003-01-17 2008-12-23 Fujifilm Corporation Digital camera
US7488923B2 (en) 2005-11-09 2009-02-10 Nikon Corporation Focus detection device, optical system and focus detection method
JP2007282108A (ja) * 2006-04-11 2007-10-25 Nikon Corp 撮像装置、カメラおよび画像処理方法
US8482657B2 (en) 2007-08-13 2013-07-09 Panasonic Corporation Imaging apparatus and camera
US8139139B2 (en) 2007-08-13 2012-03-20 Panasonic Corporation Imaging apparatus with phase difference detecting sensor
JP2010160313A (ja) * 2009-01-08 2010-07-22 Sony Corp 撮像素子および撮像装置
JP2012128248A (ja) * 2010-12-16 2012-07-05 Nikon Corp 撮像装置
WO2013094121A1 (ja) * 2011-12-21 2013-06-27 シャープ株式会社 撮像装置および電子情報機器
JPWO2013094121A1 (ja) * 2011-12-21 2015-04-27 シャープ株式会社 撮像装置および電子情報機器
US9979950B2 (en) 2011-12-21 2018-05-22 Sharp Kabushiki Kaisha Imaging device and electronic information instrument
JP2014116472A (ja) * 2012-12-10 2014-06-26 Canon Inc 固体撮像装置およびその製造方法
JP2016106472A (ja) * 2016-01-07 2016-06-16 株式会社ニコン 撮像装置
JP2018037672A (ja) * 2017-10-18 2018-03-08 キヤノン株式会社 固体撮像装置およびカメラ

Also Published As

Publication number Publication date
US20020125409A1 (en) 2002-09-12
CN1384548A (zh) 2002-12-11
US7041950B2 (en) 2006-05-09
CN1235290C (zh) 2006-01-04

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