CN1235290C - 图像感测元件,图像感测装置和信息处理装置 - Google Patents

图像感测元件,图像感测装置和信息处理装置 Download PDF

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Publication number
CN1235290C
CN1235290C CNB021192928A CN02119292A CN1235290C CN 1235290 C CN1235290 C CN 1235290C CN B021192928 A CNB021192928 A CN B021192928A CN 02119292 A CN02119292 A CN 02119292A CN 1235290 C CN1235290 C CN 1235290C
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CN
China
Prior art keywords
light
light receiving
receiving
image
image sensing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB021192928A
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English (en)
Chinese (zh)
Other versions
CN1384548A (zh
Inventor
长野明彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
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Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of CN1384548A publication Critical patent/CN1384548A/zh
Application granted granted Critical
Publication of CN1235290C publication Critical patent/CN1235290C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/4209—Photoelectric exposure meters for determining the exposure time in recording or reproducing
    • G01J1/4214—Photoelectric exposure meters for determining the exposure time in recording or reproducing specially adapted for view-taking apparatus
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H04N23/67—Focus control based on electronic image sensor signals
    • H04N23/672—Focus control based on electronic image sensor signals based on the phase difference signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/702—SSIS architectures characterised by non-identical, non-equidistant or non-planar pixel layout
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/704—Pixels specially adapted for focusing, e.g. phase difference pixel sets
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Focusing (AREA)
  • Studio Devices (AREA)
  • Automatic Focus Adjustment (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CNB021192928A 2001-02-26 2002-02-26 图像感测元件,图像感测装置和信息处理装置 Expired - Fee Related CN1235290C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001050906A JP2002250860A (ja) 2001-02-26 2001-02-26 撮像素子、撮像装置及び情報処理装置
JP050906/2001 2001-02-26

Publications (2)

Publication Number Publication Date
CN1384548A CN1384548A (zh) 2002-12-11
CN1235290C true CN1235290C (zh) 2006-01-04

Family

ID=18911794

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB021192928A Expired - Fee Related CN1235290C (zh) 2001-02-26 2002-02-26 图像感测元件,图像感测装置和信息处理装置

Country Status (3)

Country Link
US (1) US7041950B2 (enExample)
JP (1) JP2002250860A (enExample)
CN (1) CN1235290C (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4243462B2 (ja) * 2002-08-19 2009-03-25 富士フイルム株式会社 固体撮像装置および受光素子の感度対応出力調整方法
JP4025207B2 (ja) * 2003-01-17 2007-12-19 富士フイルム株式会社 固体撮像素子及びデジタルカメラ
JP4279562B2 (ja) * 2003-01-17 2009-06-17 富士フイルム株式会社 固体撮像装置の制御方法
US8446508B2 (en) * 2005-07-27 2013-05-21 Sony Corporation Solid state imaging device with optimized locations of internal electrical components
JP2007123414A (ja) * 2005-10-26 2007-05-17 Fujifilm Corp 固体撮像素子
JP4910366B2 (ja) 2005-11-09 2012-04-04 株式会社ニコン 焦点検出装置、光学システムおよび焦点検出方法
JP4770560B2 (ja) * 2006-04-11 2011-09-14 株式会社ニコン 撮像装置、カメラおよび画像処理方法
JP5098405B2 (ja) * 2007-04-11 2012-12-12 株式会社ニコン 撮像素子、焦点検出装置および撮像装置
JP5191168B2 (ja) * 2007-06-11 2013-04-24 株式会社ニコン 焦点検出装置および撮像装置
CN101779154B (zh) 2007-08-13 2012-03-07 松下电器产业株式会社 摄像装置和照相机
JP2010160313A (ja) * 2009-01-08 2010-07-22 Sony Corp 撮像素子および撮像装置
JP5537905B2 (ja) * 2009-11-10 2014-07-02 富士フイルム株式会社 撮像素子及び撮像装置
JP5866760B2 (ja) * 2010-12-16 2016-02-17 株式会社ニコン 撮像装置
JP5888914B2 (ja) * 2011-09-22 2016-03-22 キヤノン株式会社 撮像装置およびその制御方法
JP5810173B2 (ja) * 2011-12-21 2015-11-11 シャープ株式会社 撮像装置および電子情報機器
JP6099373B2 (ja) * 2012-11-29 2017-03-22 オリンパス株式会社 固体撮像装置および電子カメラ
JP6231741B2 (ja) * 2012-12-10 2017-11-15 キヤノン株式会社 固体撮像装置およびその製造方法
JP2017049318A (ja) * 2015-08-31 2017-03-09 キヤノン株式会社 焦点調節装置及びそれを用いた撮像装置及び焦点調節方法
JP6700751B2 (ja) * 2015-11-30 2020-05-27 キヤノン株式会社 撮像装置、撮像装置の制御方法およびプログラム
JP6041062B2 (ja) * 2016-01-07 2016-12-07 株式会社ニコン 撮像装置
JP6506814B2 (ja) * 2017-10-18 2019-04-24 キヤノン株式会社 固体撮像装置およびカメラ

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US4185191A (en) * 1978-06-05 1980-01-22 Honeywell Inc. Range determination system
JPS55111928A (en) 1979-02-21 1980-08-29 Ricoh Co Ltd Automatic focusing device
US4410804A (en) 1981-07-13 1983-10-18 Honeywell Inc. Two dimensional image panel with range measurement capability
JPS58199307A (ja) * 1982-05-18 1983-11-19 Olympus Optical Co Ltd 合焦検出装置
JPS5999407A (ja) 1982-11-29 1984-06-08 Nippon Kogaku Kk <Nikon> Ｔｔｌ方式の焦点検出装置
JPH0333708A (ja) 1990-07-03 1991-02-14 Minolta Camera Co Ltd ピント検出装置
DE69231269T2 (de) * 1991-03-29 2001-02-01 Olympus Optical Co., Ltd. Vorrichtung zum ermitteln der automatischen fokussierung
JP3240648B2 (ja) 1991-11-01 2001-12-17 キヤノン株式会社 焦点検出装置
US5751354A (en) * 1994-04-28 1998-05-12 Canon Kabushiki Kaisha Image sensing apparatus and method with exposure performed based on focus evaluation values
JP3434621B2 (ja) 1995-06-14 2003-08-11 オリンパス光学工業株式会社 焦点検出及び測光光学系
JP2000171846A (ja) 1998-10-01 2000-06-23 Asahi Optical Co Ltd カメラの露出制御装置
US6195509B1 (en) * 1998-10-01 2001-02-27 Asahi Kogaku Kogyo Kabushiki Kaisha Exposure control apparatus for a camera
JP4007716B2 (ja) 1999-04-20 2007-11-14 オリンパス株式会社 撮像装置
JP2000330002A (ja) 1999-05-20 2000-11-30 Olympus Optical Co Ltd 測距装置
JP3731392B2 (ja) 1999-07-21 2006-01-05 コニカミノルタフォトイメージング株式会社 焦点検出装置

Also Published As

Publication number Publication date
US20020125409A1 (en) 2002-09-12
JP2002250860A (ja) 2002-09-06
US7041950B2 (en) 2006-05-09
CN1384548A (zh) 2002-12-11

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