JP2002184872A5 - - Google Patents

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Publication number
JP2002184872A5
JP2002184872A5 JP2000381458A JP2000381458A JP2002184872A5 JP 2002184872 A5 JP2002184872 A5 JP 2002184872A5 JP 2000381458 A JP2000381458 A JP 2000381458A JP 2000381458 A JP2000381458 A JP 2000381458A JP 2002184872 A5 JP2002184872 A5 JP 2002184872A5
Authority
JP
Japan
Prior art keywords
wiring
transistor
semiconductor device
hole
common wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2000381458A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002184872A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2000381458A priority Critical patent/JP2002184872A/ja
Priority claimed from JP2000381458A external-priority patent/JP2002184872A/ja
Priority to TW090119900A priority patent/TWI276001B/zh
Priority to KR1020010052807A priority patent/KR100767555B1/ko
Priority to US09/942,612 priority patent/US6617172B2/en
Publication of JP2002184872A publication Critical patent/JP2002184872A/ja
Priority to US10/610,631 priority patent/US7442959B2/en
Publication of JP2002184872A5 publication Critical patent/JP2002184872A5/ja
Withdrawn legal-status Critical Current

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JP2000381458A 2000-12-15 2000-12-15 認識番号を有する半導体装置、その製造方法及び電子装置 Withdrawn JP2002184872A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2000381458A JP2002184872A (ja) 2000-12-15 2000-12-15 認識番号を有する半導体装置、その製造方法及び電子装置
TW090119900A TWI276001B (en) 2000-12-15 2001-08-14 Semiconductor device having identification number, manufacturing method thereof and electronic device
KR1020010052807A KR100767555B1 (ko) 2000-12-15 2001-08-30 인식 번호를 갖는 반도체 장치
US09/942,612 US6617172B2 (en) 2000-12-15 2001-08-31 Semiconductor device having identification number, manufacturing method thereof and electronic device
US10/610,631 US7442959B2 (en) 2000-12-15 2003-07-02 Semiconductor device having identification number, manufacturing method thereof and electronic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000381458A JP2002184872A (ja) 2000-12-15 2000-12-15 認識番号を有する半導体装置、その製造方法及び電子装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2004362654A Division JP3746289B2 (ja) 2004-12-15 2004-12-15 半導体装置

Publications (2)

Publication Number Publication Date
JP2002184872A JP2002184872A (ja) 2002-06-28
JP2002184872A5 true JP2002184872A5 (enExample) 2005-07-28

Family

ID=18849448

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000381458A Withdrawn JP2002184872A (ja) 2000-12-15 2000-12-15 認識番号を有する半導体装置、その製造方法及び電子装置

Country Status (4)

Country Link
US (2) US6617172B2 (enExample)
JP (1) JP2002184872A (enExample)
KR (1) KR100767555B1 (enExample)
TW (1) TWI276001B (enExample)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7316934B2 (en) * 2000-12-18 2008-01-08 Zavitan Semiconductors, Inc. Personalized hardware
JP3809353B2 (ja) * 2001-08-02 2006-08-16 キヤノン株式会社 Ｉｄ付き加工物の製造方法
EP1300872A1 (en) * 2001-10-08 2003-04-09 Infineon Technologies SC300 GmbH & Co. KG Semiconductor device identification apparatus
US7668702B2 (en) * 2002-07-19 2010-02-23 Applied Materials, Inc. Method, system and medium for controlling manufacturing process using adaptive models based on empirical data
JP4024619B2 (ja) * 2002-08-09 2007-12-19 株式会社日立製作所 半導体装置の情報読み取り装置
DE10241141B4 (de) * 2002-09-05 2015-07-16 Infineon Technologies Ag Halbleiter-Bauelement-Test-Verfahren für ein Halbleiter-Bauelement-Test-System mit reduzierter Anzahl an Test-Kanälen
US6908037B2 (en) * 2002-09-26 2005-06-21 Samsung Electronics, Co., Ltd. Circuit for generating clock signal and decoding data signal for use in contactless integrated circuit card
US6962293B2 (en) * 2002-09-26 2005-11-08 Samsung Electronics Co., Ltd. Circuit for generating clock signal and decoding data signal for use in contactless integrated circuit card
JP2004206371A (ja) * 2002-12-25 2004-07-22 Renesas Technology Corp 半導体装置
WO2005024949A1 (ja) * 2003-08-28 2005-03-17 Hitachi, Ltd. 半導体装置及びその製造方法
CN1922727B (zh) * 2004-02-20 2011-12-21 株式会社半导体能源研究所 半导体器件及ic卡、ic标签、rfid、转发器、票据、证券、护照、电子装置、包和外衣的制造方法
CN100527157C (zh) 2004-04-01 2009-08-12 株式会社日立制作所 识别信息管理方法及系统以及中心服务器
JP4347340B2 (ja) 2004-05-18 2009-10-21 株式会社日立製作所 無線ｉｃタグ及びその製造方法
US7343214B2 (en) * 2004-10-15 2008-03-11 Applied Materials, Inc. Die-level traceability mechanism for semiconductor assembly and test facility
KR100934918B1 (ko) * 2004-12-13 2010-01-06 도쿄엘렉트론가부시키가이샤 식별 코드를 갖는 반도체 칩, 그 칩의 제조 방법, 및반도체 칩 관리 시스템
WO2006090459A1 (ja) * 2005-02-24 2006-08-31 Hitachi, Ltd. 無線ｉｃタグおよびその製造方法
WO2006117853A1 (ja) 2005-04-27 2006-11-09 Spansion Llc 半導体装置、データの読み出し方法及び半導体装置の製造方法
JP4528239B2 (ja) * 2005-10-03 2010-08-18 株式会社日立製作所 無線ｉｃタグ
JP5148932B2 (ja) * 2006-06-30 2013-02-20 株式会社半導体エネルギー研究所 半導体装置
KR101362955B1 (ko) 2006-06-30 2014-02-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 그 제조 방법
US7494846B2 (en) * 2007-03-09 2009-02-24 Taiwan Semiconductor Manufacturing Company, Ltd. Design techniques for stacking identical memory dies
WO2009075675A1 (en) * 2007-12-10 2009-06-18 Agere Systems Inc. Chip identification using top metal layer
US9002673B2 (en) 2010-06-16 2015-04-07 Broadcom Corporation Simultaneous testing of semiconductor components on a wafer
US20110313711A1 (en) 2010-06-16 2011-12-22 Broadcom Corporation Identifying Defective Semiconductor Components on a Wafer Using Component Triangulation
KR20120000281A (ko) 2010-06-25 2012-01-02 삼성전자주식회사 마스크 롬
EP2712021B1 (de) * 2012-09-21 2018-04-04 Siemens Aktiengesellschaft Antenne für ein Schreib-/Lesegerät für RFID-Anordnungen und Schreib-/Lesegerät für den Betrieb mit einer externen Antenne
US10909440B2 (en) * 2013-08-22 2021-02-02 Texas Instruments Incorporated RFID tag with integrated antenna
US9691709B2 (en) 2015-02-26 2017-06-27 International Business Machines Corporation Semiconductor device security
JP2016180673A (ja) * 2015-03-24 2016-10-13 株式会社デンソー 半導体集積回路及び半導体集積回路のテストシステム
US10312091B1 (en) * 2015-10-13 2019-06-04 Multibeam Corporation Secure permanent integrated circuit personalization
US20170221871A1 (en) * 2016-02-01 2017-08-03 Octavo Systems Llc Systems and methods for manufacturing electronic devices
GB201609781D0 (en) 2016-06-03 2016-07-20 Irdeto Bv Secured chip
US20180068047A1 (en) * 2016-09-08 2018-03-08 Mapper Lithography Ip B.V. Method and system for fabricating unique chips using a charged particle multi-beamlet lithography system
US10522472B2 (en) 2016-09-08 2019-12-31 Asml Netherlands B.V. Secure chips with serial numbers
US10418324B2 (en) 2016-10-27 2019-09-17 Asml Netherlands B.V. Fabricating unique chips using a charged particle multi-beamlet lithography system
US11133206B2 (en) * 2019-04-15 2021-09-28 Tokyo Electron Limited Method for die-level unique authentication and serialization of semiconductor devices using electrical and optical marking

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4213192A (en) * 1979-01-15 1980-07-15 Christensen Alton O Sr Electron beam accessed read-write-erase random access memory
US4353064A (en) * 1981-01-14 1982-10-05 Honeywell Inc. Battery operated access control card
JPS6233475A (ja) 1985-08-06 1987-02-13 Nec Corp 半導体装置
JP2840321B2 (ja) 1989-09-20 1998-12-24 株式会社日立製作所 半導体装置
JP2910424B2 (ja) 1992-06-10 1999-06-23 日本電気株式会社 半導体装置の製造方法
JP3200475B2 (ja) * 1992-10-05 2001-08-20 三菱電機株式会社 半導体装置の製造方法
JPH07140236A (ja) * 1993-11-17 1995-06-02 Sekisui Chem Co Ltd 無線応答システム
KR100380546B1 (ko) * 1994-02-24 2003-06-25 가부시끼가이샤 히다치 세이사꾸쇼 반도체집적회로장치의제조방법
JPH08139208A (ja) 1994-11-04 1996-05-31 Toyota Motor Corp 不揮発性メモリの製造システム及びその製造方法
JPH0991970A (ja) 1995-09-26 1997-04-04 Olympus Optical Co Ltd 非破壊型強誘電体メモリ及びその駆動方法
JPH09180980A (ja) * 1995-12-21 1997-07-11 Mitsubishi Electric Corp 半導体装置の製造システム
JPH09251519A (ja) * 1996-03-14 1997-09-22 Toshiba Corp Ｉｃカード
US5990507A (en) * 1996-07-09 1999-11-23 Kabushiki Kaisha Toshiba Semiconductor device having ferroelectric capacitor structures
JPH1055939A (ja) * 1996-08-08 1998-02-24 Seiko Epson Corp 半導体装置、半導体装置の製造方法及び電子機器システム
JP4025372B2 (ja) 1996-12-04 2007-12-19 株式会社ルネサステクノロジ 半導体装置
JPH10224278A (ja) * 1997-02-10 1998-08-21 Omron Corp 非接触データ通信システム
JPH118327A (ja) 1997-06-16 1999-01-12 Sony Corp 半導体チップ識別コード付与方法及び半導体チップ管理方法
KR20000046928A (ko) * 1998-12-31 2000-07-25 조정일 전자 지갑 카드 운영 시스템
US6428718B1 (en) * 1999-08-26 2002-08-06 Advanced Micro Devices, Inc. Selective back side wet etch
JP2000332135A (ja) * 2000-01-01 2000-11-30 Hitachi Ltd 半導体集積回路装置
JP2001337439A (ja) * 2000-05-26 2001-12-07 Hitachi Ltd 半導体集積回路の設計、製造方法および検査方法並びに半導体集積回路
US7177190B2 (en) * 2004-11-26 2007-02-13 Aplus Flash Technology, Inc. Combination nonvolatile integrated memory system using a universal technology most suitable for high-density, high-flexibility and high-security sim-card, smart-card and e-passport applications

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