JPH11135723A5 - - Google Patents

Info

Publication number
JPH11135723A5
JPH11135723A5 JP1998242822A JP24282298A JPH11135723A5 JP H11135723 A5 JPH11135723 A5 JP H11135723A5 JP 1998242822 A JP1998242822 A JP 1998242822A JP 24282298 A JP24282298 A JP 24282298A JP H11135723 A5 JPH11135723 A5 JP H11135723A5
Authority
JP
Japan
Prior art keywords
power supply
contact pad
supply line
operatively connected
negative power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1998242822A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11135723A (ja
Filing date
Publication date
Application filed filed Critical
Publication of JPH11135723A publication Critical patent/JPH11135723A/ja
Publication of JPH11135723A5 publication Critical patent/JPH11135723A5/ja
Pending legal-status Critical Current

Links

JP10242822A 1997-08-29 1998-08-28 混合電圧チップ用カスコード接続mos esd保護回路 Pending JPH11135723A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US5727397P 1997-08-29 1997-08-29
US60/057273 1997-08-29

Publications (2)

Publication Number Publication Date
JPH11135723A JPH11135723A (ja) 1999-05-21
JPH11135723A5 true JPH11135723A5 (enExample) 2005-10-13

Family

ID=22009586

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10242822A Pending JPH11135723A (ja) 1997-08-29 1998-08-28 混合電圧チップ用カスコード接続mos esd保護回路

Country Status (2)

Country Link
US (1) US5930094A (enExample)
JP (1) JPH11135723A (enExample)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6091594A (en) * 1998-02-18 2000-07-18 Vlsi Technology, Inc. Protection circuits and methods of protecting a semiconductor device
US6369427B1 (en) * 1998-11-03 2002-04-09 Vlsi, Technology, Inc. Integrated circuitry, interface circuit of an integrated circuit device, and cascode circuitry
JP3844915B2 (ja) * 1999-06-29 2006-11-15 株式会社東芝 半導体装置
DE19944488A1 (de) * 1999-09-16 2001-04-19 Infineon Technologies Ag ESD-Schutzanordnung für Signaleingänge und -ausgänge mit Überspannungstoleranz
JP3926975B2 (ja) * 1999-09-22 2007-06-06 株式会社東芝 スタック型mosトランジスタ保護回路
US6466423B1 (en) * 2000-01-06 2002-10-15 Taiwan Semiconductor Manufacturing Co., Ltd. Electrostatic discharge protection device for mixed voltage application
US6327126B1 (en) * 2000-01-28 2001-12-04 Motorola, Inc. Electrostatic discharge circuit
US6690555B1 (en) * 2001-03-25 2004-02-10 National Semiconductor Corporation Electrostatic discharge protection circuit with cascoded trigger-switch suitable for use with over-voltage tolerant CMOS input/output buffers
KR100431066B1 (ko) * 2001-09-27 2004-05-12 삼성전자주식회사 정전 방전 보호 기능을 가진 반도체 장치
US6639782B2 (en) * 2001-11-01 2003-10-28 Macronix International Co., Ltd. Protecting circuit of the semiconductor factory automation
US6657836B2 (en) 2001-12-18 2003-12-02 Koninklijke Philips Electronics N.V. Polarity reversal tolerant electrical circuit for ESD protection
US6747857B1 (en) * 2002-02-01 2004-06-08 Taiwan Semiconductor Manufacturing Company Clamping circuit for stacked NMOS ESD protection
US6809386B2 (en) * 2002-08-29 2004-10-26 Micron Technology, Inc. Cascode I/O driver with improved ESD operation
US7274544B2 (en) * 2004-10-21 2007-09-25 Taiwan Semiconductor Manufacturing Company Gate-coupled ESD protection circuit for high voltage tolerant I/O
US20070007597A1 (en) * 2005-07-07 2007-01-11 Microchip Technology Incorporated ESD structure having different thickness gate oxides
US7791851B1 (en) * 2006-01-24 2010-09-07 Cypress Semiconductor Corporation Cascode combination of low and high voltage transistors for electrostatic discharge circuit
US7385793B1 (en) * 2006-01-24 2008-06-10 Cypress Semiconductor Corporation Cascode active shunt gate oxide project during electrostatic discharge event
TW200739872A (en) * 2006-04-04 2007-10-16 Univ Nat Chiao Tung Power line electrostatic discharge protection circuit featuring triple voltage tolerance
US7642856B1 (en) * 2006-05-30 2010-01-05 Atheros Communications, Inc. Amplifier capable of using a power supply voltage higher than its process voltages
DE102006037500B3 (de) * 2006-08-10 2008-04-03 Infineon Technologies Ag ESD-Schutzschaltung mit geringem Leckstrom und Verfahren zum ESD-Schutz
US7812638B2 (en) * 2007-09-06 2010-10-12 National Sun Yat-Sen University Input output device for mixed-voltage tolerant
US7626790B2 (en) * 2007-10-05 2009-12-01 Smartech Worldwide Limited Electrostatic discharge protection for a circuit capable of handling high input voltage
US7692483B2 (en) * 2007-10-10 2010-04-06 Atmel Corporation Apparatus and method for preventing snap back in integrated circuits
TWI341636B (en) * 2007-10-17 2011-05-01 Mstar Semiconductor Inc Circuit for protecting nmos device from voltage stress
CN101483032B (zh) * 2008-01-10 2011-06-15 瑞鼎科技股份有限公司 控制芯片
US8085604B2 (en) * 2008-12-12 2011-12-27 Atmel Corporation Snap-back tolerant integrated circuits
US8760827B2 (en) * 2009-04-15 2014-06-24 International Business Machines Corporation Robust ESD protection circuit, method and design structure for tolerant and failsafe designs
US9013842B2 (en) 2011-01-10 2015-04-21 Infineon Technologies Ag Semiconductor ESD circuit and method
US8413101B2 (en) 2011-07-15 2013-04-02 Infineon Technologies Ag System and method for detecting parasitic thyristors in an integrated circuit
JP5594546B2 (ja) * 2012-03-02 2014-09-24 横河電機株式会社 入力保護回路
JP6384223B2 (ja) * 2014-09-17 2018-09-05 株式会社ソシオネクスト 静電気保護回路および集積回路
US11056880B1 (en) 2020-03-31 2021-07-06 Western Digital Technologies, Inc. Snapback electrostatic discharge protection for electronic circuits

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5473500A (en) * 1994-01-13 1995-12-05 Atmel Corporation Electrostatic discharge circuit for high speed, high voltage circuitry
US5852375A (en) * 1997-02-07 1998-12-22 Silicon Systems Research Limited 5v tolerant I/O circuit
US5852540A (en) * 1997-09-24 1998-12-22 Intel Corporation Circuit for protecting the input/output stage of a low voltage integrated circuit device from a failure of the internal voltage supply or a difference in the power-up sequencing of supply voltage levels

Similar Documents

Publication Publication Date Title
JPH11135723A5 (enExample)
ATE109308T1 (de) Schutzsystem für cmos-integrierte schaltungen.
JP3013624B2 (ja) 半導体集積回路装置
KR970705861A (ko) 정전기 보호 회로(electrostatic protection circuit)
JPH11505374A (ja) マクロセル・アレイのための静電気放電保護
MY106702A (en) Semiconductor device having protection circuit.
JP2005045016A5 (enExample)
JPH0391264A (ja) 入力保護回路を備えた半導体装置
WO2007007237A2 (en) Integrated circuit with electro-static discharge protection
JP2004119883A5 (enExample)
Ker et al. ESD protection to overcome internal gate-oxide damage on digital-analog interface of mixed-mode CMOS IC's
TW493208B (en) Semiconductor integrated circuit
TW338833B (en) Electronic circuit device
KR920003496A (ko) 반도체장치
JPH0379120A (ja) 入力保護回路
JP2004186735A5 (enExample)
KR100631955B1 (ko) 정전기 방전 보호 회로
JP2780289B2 (ja) 半導体装置
KR100631956B1 (ko) 정전기 방전 보호 회로
JPS61137358A (ja) 半導体集積回路装置
JPH0587024B2 (enExample)
JPH04283960A (ja) 半導体装置
JPH02165664A (ja) 半導体集積装置
JPH02111063A (ja) 半導体集積回路装置
JPS6123357A (ja) 半導体集積回路