JPH11135723A - 混合電圧チップ用カスコード接続ｍｏｓ ｅｓｄ保護回路 - Google Patents

混合電圧チップ用カスコード接続ｍｏｓ ｅｓｄ保護回路

Info

Publication number
JPH11135723A
JPH11135723A JP10242822A JP24282298A JPH11135723A JP H11135723 A JPH11135723 A JP H11135723A JP 10242822 A JP10242822 A JP 10242822A JP 24282298 A JP24282298 A JP 24282298A JP H11135723 A JPH11135723 A JP H11135723A
Authority
JP
Japan
Prior art keywords
voltage
circuit
contact pad
power supply
esd
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10242822A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11135723A5 (enExample
Inventor
E Ajith Amerasekera
アジス アメラセケラ イー
B Saylam Raul
ビー セイラム ラウル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of JPH11135723A publication Critical patent/JPH11135723A/ja
Publication of JPH11135723A5 publication Critical patent/JPH11135723A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP10242822A 1997-08-29 1998-08-28 混合電圧チップ用カスコード接続ｍｏｓ ｅｓｄ保護回路 Pending JPH11135723A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US5727397P 1997-08-29 1997-08-29
US60/057273 1997-08-29

Publications (2)

Publication Number Publication Date
JPH11135723A true JPH11135723A (ja) 1999-05-21
JPH11135723A5 JPH11135723A5 (enExample) 2005-10-13

Family

ID=22009586

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10242822A Pending JPH11135723A (ja) 1997-08-29 1998-08-28 混合電圧チップ用カスコード接続ｍｏｓ ｅｓｄ保護回路

Country Status (2)

Country Link
US (1) US5930094A (enExample)
JP (1) JPH11135723A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7746611B2 (en) 2006-08-10 2010-06-29 Infineon Technologies Ag ESD protective circuit having low leakage current
JP2012524404A (ja) * 2009-04-15 2012-10-11 インターナショナル・ビジネス・マシーンズ・コーポレーション トレラント及びフェールセーフ設計のためのロバストなｅｓｄ保護回路、方法及び設計構造体
JP2013211522A (ja) * 2012-03-02 2013-10-10 Yokogawa Electric Corp 入力保護回路
JP2016063031A (ja) * 2014-09-17 2016-04-25 株式会社ソシオネクスト 静電気保護回路および集積回路

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6091594A (en) * 1998-02-18 2000-07-18 Vlsi Technology, Inc. Protection circuits and methods of protecting a semiconductor device
US6369427B1 (en) * 1998-11-03 2002-04-09 Vlsi, Technology, Inc. Integrated circuitry, interface circuit of an integrated circuit device, and cascode circuitry
JP3844915B2 (ja) * 1999-06-29 2006-11-15 株式会社東芝 半導体装置
DE19944488A1 (de) * 1999-09-16 2001-04-19 Infineon Technologies Ag ESD-Schutzanordnung für Signaleingänge und -ausgänge mit Überspannungstoleranz
JP3926975B2 (ja) * 1999-09-22 2007-06-06 株式会社東芝 スタック型ｍｏｓトランジスタ保護回路
US6466423B1 (en) * 2000-01-06 2002-10-15 Taiwan Semiconductor Manufacturing Co., Ltd. Electrostatic discharge protection device for mixed voltage application
US6327126B1 (en) * 2000-01-28 2001-12-04 Motorola, Inc. Electrostatic discharge circuit
US6690555B1 (en) * 2001-03-25 2004-02-10 National Semiconductor Corporation Electrostatic discharge protection circuit with cascoded trigger-switch suitable for use with over-voltage tolerant CMOS input/output buffers
KR100431066B1 (ko) * 2001-09-27 2004-05-12 삼성전자주식회사 정전 방전 보호 기능을 가진 반도체 장치
US6639782B2 (en) * 2001-11-01 2003-10-28 Macronix International Co., Ltd. Protecting circuit of the semiconductor factory automation
US6657836B2 (en) 2001-12-18 2003-12-02 Koninklijke Philips Electronics N.V. Polarity reversal tolerant electrical circuit for ESD protection
US6747857B1 (en) * 2002-02-01 2004-06-08 Taiwan Semiconductor Manufacturing Company Clamping circuit for stacked NMOS ESD protection
US6809386B2 (en) * 2002-08-29 2004-10-26 Micron Technology, Inc. Cascode I/O driver with improved ESD operation
US7274544B2 (en) * 2004-10-21 2007-09-25 Taiwan Semiconductor Manufacturing Company Gate-coupled ESD protection circuit for high voltage tolerant I/O
US20070007597A1 (en) * 2005-07-07 2007-01-11 Microchip Technology Incorporated ESD structure having different thickness gate oxides
US7791851B1 (en) * 2006-01-24 2010-09-07 Cypress Semiconductor Corporation Cascode combination of low and high voltage transistors for electrostatic discharge circuit
US7385793B1 (en) * 2006-01-24 2008-06-10 Cypress Semiconductor Corporation Cascode active shunt gate oxide project during electrostatic discharge event
TW200739872A (en) * 2006-04-04 2007-10-16 Univ Nat Chiao Tung Power line electrostatic discharge protection circuit featuring triple voltage tolerance
US7642856B1 (en) * 2006-05-30 2010-01-05 Atheros Communications, Inc. Amplifier capable of using a power supply voltage higher than its process voltages
US7812638B2 (en) * 2007-09-06 2010-10-12 National Sun Yat-Sen University Input output device for mixed-voltage tolerant
US7626790B2 (en) * 2007-10-05 2009-12-01 Smartech Worldwide Limited Electrostatic discharge protection for a circuit capable of handling high input voltage
US7692483B2 (en) * 2007-10-10 2010-04-06 Atmel Corporation Apparatus and method for preventing snap back in integrated circuits
TWI341636B (en) * 2007-10-17 2011-05-01 Mstar Semiconductor Inc Circuit for protecting nmos device from voltage stress
CN101483032B (zh) * 2008-01-10 2011-06-15 瑞鼎科技股份有限公司 控制芯片
US8085604B2 (en) * 2008-12-12 2011-12-27 Atmel Corporation Snap-back tolerant integrated circuits
US9013842B2 (en) 2011-01-10 2015-04-21 Infineon Technologies Ag Semiconductor ESD circuit and method
US8413101B2 (en) 2011-07-15 2013-04-02 Infineon Technologies Ag System and method for detecting parasitic thyristors in an integrated circuit
US11056880B1 (en) 2020-03-31 2021-07-06 Western Digital Technologies, Inc. Snapback electrostatic discharge protection for electronic circuits

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5473500A (en) * 1994-01-13 1995-12-05 Atmel Corporation Electrostatic discharge circuit for high speed, high voltage circuitry
US5852375A (en) * 1997-02-07 1998-12-22 Silicon Systems Research Limited 5v tolerant I/O circuit
US5852540A (en) * 1997-09-24 1998-12-22 Intel Corporation Circuit for protecting the input/output stage of a low voltage integrated circuit device from a failure of the internal voltage supply or a difference in the power-up sequencing of supply voltage levels

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7746611B2 (en) 2006-08-10 2010-06-29 Infineon Technologies Ag ESD protective circuit having low leakage current
JP2012524404A (ja) * 2009-04-15 2012-10-11 インターナショナル・ビジネス・マシーンズ・コーポレーション トレラント及びフェールセーフ設計のためのロバストなｅｓｄ保護回路、方法及び設計構造体
JP2013211522A (ja) * 2012-03-02 2013-10-10 Yokogawa Electric Corp 入力保護回路
JP2016063031A (ja) * 2014-09-17 2016-04-25 株式会社ソシオネクスト 静電気保護回路および集積回路

Also Published As

Publication number Publication date
US5930094A (en) 1999-07-27

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